作者:
Ohkawa, YTsuji, YKoshiba, MFaculty of Engineering
Hokkaido University Sapporo Japan 060 Received his B.S. and M.S. degrees in 1991 and 1993
respectively from the Department of Electronic Engineering Hokkaido University where he is currently in the doctoral program. He has been engaged in research on opto- and wave electronics. Currently in the doctoral program at Hokkaido University (Department of Electronic Engineering)
where he received his B.S. and M.S. degrees in 1991 and 1993 respectively. He has been engaged in research on quantum wave phenomena in semiconductor nanostructures such as quantum wires and quantum dots. Received his B.S.
M.S. and Ph.D. degrees in 1971 1973 and 1976 respectively from the Department of Electronic Engineering Hokkaido University. In 1976 he became a Lecturer at Kitami Institute of Technology where he was promoted to an Associate Professor in 1977. In 1979 he became an Associate Professor of the Department of Electronic Engineering Hokkaido University where he was promoted to Professor in 1987. He has been engaged in research on opto- and wave electronics. In 1987 he received a Best Paper Award. He is the author ofFundamentals of Finite Element Method for Opto- and Wave Electronics(Morikita)Optical Waveguide Analysis(Asakura)Optical Waveguide Analysis (McGraw-Hill) andOptical Waveguide Theory by the Finite-Element Method(KTK Scientific Publishers/Kluwer Academic Publishers). He is the co-author of one book and jointly authored six others. He is a member of the Institute of Television Engineers of Japan the Institute of Electrical Engineers of Japan the Japan Society for Simulation Technology the Japan Society for Computational Methods in Engineering and the Japan Society of Applied Electromagnetics. He is also an IEEE Senior Member.
In this paper, the formulation of the analysis based on the finite element method is presented for the first time for an anisotropic dielectric grating. By this analysis method, the diffraction characteristics of a pl...
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In this paper, the formulation of the analysis based on the finite element method is presented for the first time for an anisotropic dielectric grating. By this analysis method, the diffraction characteristics of a plane wave by an anisotropic dielectric grating with an arbitrary shape can be computed easily. The finite element method is applied to the region corresponding to one period containing an anisotropic dielectric grating. The analytical relationships are applied to the boundaries on the incident and transmitted sides while the periodic boundary condition is applied to all other boundaries. Specifically, an index modulated grating and a groove grating are chosen for the analysis of the diffraction characteristics when the TE and TM waves are coupled. From the comparison with the analysis results by the coupled-mode theory and the spatial harmonic expansion method, the validity of the present method is confirmed.
作者:
Wakabayashi, IMiyauchi, KFaculty of Engineering
Science University of Tokyo Tokyo Japan 162 Received his B.E. and M.E. degrees in Electrical Engineering from the Science University of Tokyo in 1974 and 1976
respectively. He joined the Science University of Tokyo as an Instructor of Electrical Engineering in 1976. Since then he was involved in research on measurements of surface topography by using evanescent wave in microwave. Since the end of 1990 he has been involved in research on optical and microwave filters. He is a member of the Society of Applied Physics (Japan) and IEEE. NonmemberGraduated from the University of Tokyo in Electrical Engineering in 1954 and joined NTT the same year. He was appointed as a member of the technical staff
department director vice director-general of Research and Development Bureau director of Radio System and Network Laboratory etc. of Electrical Communication Laboratories. During this period he was involved in research development and management of microwave and millimeter wave high-speed digital communication systems satellite communication systems communication satellite on-board equipment (CS-2CS-3N-STAR etc.) submarine optical fiber communication systems mobile communications etc. In 1986 he joined the Science University of Tokyo as a Professor. He received his Ph.D. degree from the University of Tokyo in 1966 and is an IEEE Fellow. He was chairman of the Microwave Research Committee chairman of the Satellite Communications Research Committee chairman of IEEE MTT Tokyo Chapter chairman of Microwave APMC'90 International Symposium Organizing Committee Member of the Radio Science Committee of the Science Council of Japan etc. He received the Paper Award of this Society (two times) Achievement Award Mainichi Industrial Technology Award etc. He is the author ofMicrowave Circuits for Communications Digital Satellite CommunicationsMicrowave and Optical EngineeringSatellite Communication NetworksAn Introduction to Communication Systemsand other books.
The general design principle of the dielectric multilayer bandpass filters proposed by the authors is applied to the case where only the fundamental thickness of dielectric layers are used. The actual design procedure...
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The general design principle of the dielectric multilayer bandpass filters proposed by the authors is applied to the case where only the fundamental thickness of dielectric layers are used. The actual design procedure, layer structure, necessary formulation in the design, conditions, anddesign examples are presented. Further, with respect to various combinations of the parameters, 900 filters are designed and their characteristics are verified to show the distribution of their design errors. In actual designs, the objectives are third-, fifth-, and seventh-order Butterworth and Chebyshev filters (0.5-dB and 1-db ripples) using SiO2 and TiO2 and the center wavelength of 1.3 mu m. The percentage bandwidths am taken to be up to 10 percent with angles of incidence up to 30 deg with P or S polarizations. It is understood that, when the bandwidth is set to be less than 5 percent or when it is set in the range of 5 to 10 percent, it is possible to achieve designed filters with percentage bandwidth errors below 1 percent and 3 percent, respectively. In all Butterworth filters, the insertion loss at the center wavelength was below 0.04 dB. For the objective ripple in Chebyshev filters set at 0.5 dB, the maximum ripples of all filters distribute within 0.15 to 2 dB while, in the case of l-dB objective ripple, they are in the range from 0.4 to 2.3 dB.
作者:
Kawashima, HSeiko Instruments
Inc. Matsudo Japan 271 Received his B.S. degree in Physics from the Science University of Tokyo in 1970 and his Ph.D. degree in Electrical Engineering from Waseda University in 1986. In 1971
he joined Daini Seiko-sha (presently Seiko Instruments Inc.) Tokyo. Since then he has been engaged in the research and development of quartz crystal resonators for wristwatches NS-GT cut coupling quartz crystal resonators face shear mode quartz crystal resonators length-extensional mode quartz crystal resonators quartz crystal sensors (temperature vacuum weight acceleration thin film) high-precision quartz crystal oscillators (S-TCXO VC-S-TCXO) and piezoelectric actuators. He has published more than 50 technical papers and holds over 30 patents and numerous foreign patents. Dr. Kawashima is a Lecturer at Yamanashi University for 1994–1995. He has also received numerous awards including: The Ministry Award of Science and Technology from the Science and Technology Agency of Japan in 1993 the 1993 IEEE Cady Award and the Okochi Memorial Prize from Okochi Memorial Foundation of Japan in 1995. He is co-author ofManufacture and Applications of Piezoelectric Materials.He is a senior member of the Institute of Electrical and Electronics Engineers the Japan Society of Applied Physics and so on.
This paper describes torsional mode quartz crystal resonators of the tuning fork type with stepped vibration bars. A frequency equation and a transcendental equation were derived from the ''clamped-free'&#...
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This paper describes torsional mode quartz crystal resonators of the tuning fork type with stepped vibration bars. A frequency equation and a transcendental equation were derived from the ''clamped-free'' boundary condition and the stepped portion of the continuity condition, respectively. Because these equations were given as a function of torsional rigidity, the torsional rigidity was derived from the equation of equilibrium. From related equations, it was shown that high or low frequency could be obtained without a change in length. The calculated results were then compared with the measured values so that both results would be in good agreement.
A new procedure for the optimum design of optoelectronic devices is explained in this paper and an automatic search is made simultaneously for the structure satisfying various demands. The feature of this procedure is...
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A new procedure for the optimum design of optoelectronic devices is explained in this paper and an automatic search is made simultaneously for the structure satisfying various demands. The feature of this procedure is in the introduction of cost by which the quantitative evaluation of the structure becomes possible and the global search for the required structure by simulated annealing can be carried out. First, the definition of cost anddetails of the optimization procedure are clarified. In optimization, in addition to convergence to the minimum point of the cost function (the optimum configuration from theoretical viewpoint), the convergence also is possible in structures with great tolerance to fabrication errors (neighborhood cost (NC) and finite temperature annealing (FTA) methods). Next, these three proposed methods are used in the design of a pnpn differential optical switch and the effectiveness of the methods is verified. The method of cost expression, the relation between annealing parameters, and convergence are investigated. It is shown that cost expression with large degree of freedom improves the search for high-performance structures and the initial temperature of annealing or the fixed temperature of FTA method is the important parameter which sets up the probability of acceptance. Further, it is shown that the convergence cost is inversely proportional to the time spent in annealing. These results are useful guidelines in the optimum design of arbitrary optoelectronic devices.
The optical absorption mechanism of a semiconductor optical modulator with electron-depletion absorption control was theoretically and experimentally investigated. In the dopeddirect transition semiconductor material...
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The optical absorption mechanism of a semiconductor optical modulator with electron-depletion absorption control was theoretically and experimentally investigated. In the dopeddirect transition semiconductor material, optical absorption increased when electrons were depleted. In the region where electrons are depleted, the number of electrons in the conduction band and holes in the valence banddecrease, the impurity energy level shifts due to the decrease of the screening effect and the internal electric field strength increases. Because of these phenomena, the band-to-band electron transition probability increases. As a result, the optical absorption increases in the modulator.
作者:
Schulte, dPSkolnick, AHe has supported the development and operation of several naval systems
including advanced component selection for Trident II fire control and navigation systems. He served as branch manager of the Surface Ship ASW Combat System Branch which acted as the acquisition engineering agent for the AN/SQQ-89 Surface Ship Anti-Submarine Warfare Weapon System. He was then selected to manage the Module Engineering Department which provided engineering support to numerous naval systems including the AN/BSY-1 Submarine Combat System and the Trident II fire control and navigation system. He then served as the deputy program manager for NAVSEA Progressive Maintenance (2M/ATE). He holds a B.S. degree in Electrical Engineering from Purdue University and currently is pursuing a Maste's degree in Public Environmental Affairs at Indiana University—Purdue University
Indianapolis. He served at Applied Physics Laboratory/The Johns Hopkins University in missile development
then aboard USS Boston (CAG-1) and played leading roles in several weapon system developments (Regulus Terrier Tartar Talos) inertial navigation (Polaris) deep submergence (DSRV) and advanced ship designs (SES). He later was director Combat System Integration Naval Sea Systems Command and head Combat Projects Naval Ship Engineering Center. He led the Navy's High Energy Lasers and Directed Energy Weapons development efforts. He was vice president advanced technology at Operations Research Inc. and vice president maritime engineering at Defense Group Inc. before starting SSC in 1991. Dr. Skolnick holds a B.S. degree in Mathematics and Economics
Queens College an M.A. degree in Mathematics and Philosophy Columbia University an M.S. degree in Electrical/Aeronautical Engineering U.S. Naval Postgraduate School and a Ph.D. in Electrical Engineering and Applied Mathematics from Polytechnic University in New York. He is the author of many published papers on engineering design issues source selection procedures and large-scale complex technology problems
The Fleet continues to require high performance systems that can operate with dependability in the seas' unforgiving environments and under hostile action. Those demands are not new. What has changed is the urgent...
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The Fleet continues to require high performance systems that can operate with dependability in the seas' unforgiving environments and under hostile action. Those demands are not new. What has changed is the urgent priority formerly assigned to national defense issues. The arguments for continued superpower military strength are now roiled in politics along with unsettled budgets and uncertain force level projections. Current expectations revolve about indefinite fiscal and operational issues (difficult funding constraints and broadband threats). In the actual event of ''doing more with less,'' a practical response is to apply the creative power available from soundengineering judgement and the crucible of experience to the immediate needs of the Fleet. The attempt to shorten the path between advanceddevelopment effort and Fleet use has been tried occasionally in the past, often, without exemplary results. The Sustainable Hardware and Affordable Readiness Practices (SHARP) program, is a generic R&d effort under OpNav sponsorship that has been working steadily on sensible solutions to product engineering problems. Armed today with fast-time, large-scale computation abilities and modern tools for technical problem solving coupled with specializedengineering knowledge, it has been refreshed and is underway satisfying existing Fleet needs. The relationship between fully responsive engineering services and current operational needs is always demanding. The connection between advancedengineeringdevelopment (6.3 category funds) and immediate Fleet usage brings added complexity and challenge, both technical and organizational. Illustrative examples of affordable engineering solutions to ''retain, revise, replace or retire'' questions are presented within the context of both Fleet realities and budgetary limitations. The discussion covers legacy system support, civil/military considerations and Fleet maintenance issues. It describes the substantial and critical payoffs i
In this paper, voltage controlled self-temperature compensated oscillators made with NS-GT cut quartz resonators (VC-S-TCXOs in what follows) are introduced and their frequency stability (obtained by controlling input...
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In this paper, voltage controlled self-temperature compensated oscillators made with NS-GT cut quartz resonators (VC-S-TCXOs in what follows) are introduced and their frequency stability (obtained by controlling input voltage to VC-S-TCXO) is discussed. An oscillator circuit consists of a CMOS inverter, a variable capacitor diode, resistors, and capacitors. The primary oscillator frequency of the coupled quartz resonator is first derived from the electric equivalent circuit of the oscillator. The oscillator frequency is given by a function of the coupling coefficient, which in turn is given as a function of the load capacitance C-L. Since frequency stability by controlling the input voltage to VC-S-TCXO is dictated by the VC circuit, the VC circuit was investigated in detail in order for the circuit independent of temperature to be obtained. Using the VC circuit, the oscillator frequency was controlled by the input voltage and the temperature stability of the oscillator frequency was less than 4 x 10(-9) at a temperature range of -30 to 85 degrees C. Furthermore, it has been demonstrated experimentally that the frequency stability of the VC-S-TCXO directly after voltage control does not depend on the frequency temperature characteristics of the quartz resonator, time interval between the voltage control, or rate of temperature change.
作者:
Shimizu, STanizawa, MKusunoki, SInuishi, MMiyoshi, HULSI Laboratory
Mitsubishi Electric Corporation 4-1 Mizuhara Itami Hyogo Japan 664 Received the B.S. and M.S. degrees in electronic engineering from Kobe University
Hyogo Japan in 1988 and 1990 respectively. In 1990 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation where he has been engaged in research on the structural design of submicron CMOS such as MOSFETs silicidation and reliability including investigations of the hot carrier effect in the ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received the B.S. and M.S. degrees in electronic engineering from Kyoto University
Kyoto Japan in 1983 and 1985 respectively. From 1985 to 1988 he was with Sharp Corporation Nara Japan. In 1988 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation Hyogo Japan where he has been engaged in semiconductor device modeling for circuit simulation in ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received the B.S. degree in Physics and the M.S. degree in Information Systems Science from Kyushu University in 1978 and 1982
respectively. He joined the LSI Research and Developmept Laboratory Mitsubishi Electric Corporation Hyogo Japan in 1982. From 1982 to 1988 he was engaged in research on SOI device technology and three-dimensional ICs and from 1988 to 1995 he was engaged in research on the structural design of scaled MOS transistors. He is presently engaged in the research on the structural design of power devices in the ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received a B.S. in materials science and engineering from Osaka University
Japan in 1976 and a Ph.D. from Northwestern University Evanston Illinois in 1981. In 1981 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation Hyogo Japan. Since then he has been engaged in research on process and device technologies for 64K and 1M DRAMs and on submicron CMOS isolation ret
High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional metho...
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High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the dC hot carrier lifetime of MOSFETs as measured by dC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under dC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate anddrain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC anddC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.
Guidelines ate given for designing a piezoelectric vibratory gyroscope to be used as an angular velocity sensor. First, a basic equivalent circuit is given and an approximate equation is derived for sensitivity. Based...
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Guidelines ate given for designing a piezoelectric vibratory gyroscope to be used as an angular velocity sensor. First, a basic equivalent circuit is given and an approximate equation is derived for sensitivity. Based on the equation, guidelines and issues related to improving sensitivity are discussed. The relationship between the output signal anddifference in resonance frequencies of the driving anddetecting sides is investigated for cases where the angular velocity is either constant or changing sinusoidally with time. The results are then used to determine the resonance frequencies. Furthermore, a design guideline based on an integral equivalent circuit, which has taken the effects of leakage output into consideration, is discussed and an approach is suggested for supporting the gyroscope. Finally, the performances of various gyroscopes are compared and the utility of a piezoelectric gyroscope as an angular velocity sensor is discussed.
In 1992, the U.S. Environmental Protection Agency (EPA) proposed risk-based management of hazardous waste. A major component of the proposed rule is the determination of non-site-specific screening concentration level...
In 1992, the U.S. Environmental Protection Agency (EPA) proposed risk-based management of hazardous waste. A major component of the proposed rule is the determination of non-site-specific screening concentration levels from waste leachate. Ground water at a downgradient exposure point must not exceed those screening levels, or more stringent requirements would apply. The screening concentration level is determined with verified models and equations that simulate the transport and attenuation of chemicals as they travel from the source area to the exposure point. A consortium of screening levels is determined in this paper by considering varying physical, chemical, and biological conditions. In addition, a method is developed for multicomponent leaching from contaminated soils in a landfill to determine the time-dependent behavior of a finite source. Finally, this paper discusses infiltration rate through the clay liner.
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