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Degradation mechanism of contact resistance during window formation

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第1期79卷 93-100页

作者： Sekine, M Kakuhara, Y Kikkawa, T Nonmember NEC ULSI Device Development Laboratory Sagamihara Japan 229 Graduated in 1985 from Department of Metal Materials Osaka University where he received his Master's degree in 1988. He joined NEC in 1988. Graduated in 1984 from the Department of Electrical Engineering Aoyama Gakuin University and she received her Master's degree from Shinshu University in 1986. She joined NEC in 1986. She is a member of the Applied Physics Society. Graduated in 1974 from the Department of Electrical Engineering Shizuoka University where he received his Master's degree in 1976. He received his Ph.D. degree from Tokai University. He joined NEC in 1976. He is engaged in research and development of semiconductor LSI device and process. He was a Visiting Researcher at MIT from 1983 to 1984. He is currently a director of multilayer wire formation program ULSI Device Development Institute. He is a member of IEEE ICS and Applied Physics Society.

This paper describes a contact degradation mechanism during window formation followed by selective tungsten chemical vapor deposition (W-CVD). Contact resistances by using selective W-CVD were increased as the overetching rate increased. Surface analysis made it clear that the Si surface at the bottom of contact was damaged and oxygen atoms from dielectrics were introduced during window etching. These damage and oxygen atoms break Si-Si bonds and make Si-O bonds after additional ion implantation. The Si-O bonds degrade the valence-band density of states of the Si surface. Such a damaged surface will not react with WF6. This inactivation is the reason for contact degradation. Controlling the Si surface state by using the chemical dry etching (CDE) technique solves this problem.

关键词： selective W-CVD contact chemical dry etch

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Allocation of environmental remediation funds using economic risk-cost-benefit analysis: A case study

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GROUND WATER MONITORING AND REMEDIATION 1996年第4期16卷 95-105页

作者： James, BR Huff, DD Trabalka, JR Ketelle, RH Rightmire, CT Bruce James is principle of BRIJ Risk Research. He has extensive experience in the application of decision/risk-cost-benefit analysis to environmental remediation and data-worth problems particularly those in complex heterogeneous geological environments. He has a Ph.D. in geological engineering from the University of British Columbia. (BRIJ Risk Research 1235 Sunset Dr. Saltspring Island B.C. Canada V8K 1E2). Dale Huff is a senior staff scientist in the Environmental Sciences Division at ORNL with active involvement in the Environmental Restoration Program. He has a Ph.D. in hydrology from Stanford University. (Oak Ridge National Laboratory P.O. Box 2008 Oak Ridge TN 37831-6400.) John Trabalka is a senior staff scientist in the Chemical Technology Division at ORNL. He has a wide range of research interests ranging from biogeochemistry to health physics. Trabalka has a Ph.D. in environmental health sciences from the University of Michigan. (Oak Ridge National Laboratory P.O. Box 2008 Oak Ridge TN 37831-6228.) Richard Ketelle is a hydrogeologist in the Energy Division of ORNL and is presently the groundwater manager at ORNL. He has an M.S. in geology from the University of Tennessee. (Oak Ridge National Laboratory P.O. Box 2008 Oak Ridge TN 37831-6185.) Craig Rightmire is a hydrogeologist in the Environmental Sciences Division at ORNL. He is presently manager of the Energy Systems Groundwater Program Office. Rightmire has an M.A. in geology from the Univeristy of Texas Austin. (Oak Ridge National Laboratory P.O. Box 2008 Oak Ridge TN 37831-6400.)

Efficient allocation of remediation resources is a critical need throughout the nation. Economic risk-cost-benefit analysis is an important tool for meeting this need. This paper provides site engineers, geologists. and managers with a conceptual understanding of economic risk-cost-benefit analysis and shows how it can be applied, even in situations where existing data are sparse or poor in quality. An example analysis is applied to the remediation of radioactive waste at Oak Ridge National Laboratory, in which the cost-effectiveness is compared for two remediation alternatives: containment of the waste or monitoring only. A data-worth analysis is also carried out to estimate the maximum justifiable exploration budget and the cost-effectiveness of two proposed data collection programs. Results indicate that the methodology has potential in making robust remediation decisions regarding certain types of questions.

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Optimum design technique for optoelectronic devices using simulated annealing

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第1期79卷 22-32页

作者： Hara, K Iwamoto, T Kyuma, K Member Semiconductor Research Laboratory Mitsubishi Electric Corporation Amagasaki Japan 661 Received his B.S. and M.S. degrees in Electronics Engineering from Osaka University in 1986 and 1988 respectively. He joined Mitsubishi Electric Corporation in 1988. At present he is with the Neural & Parallel Processing Technology Development Center. He is involved in research on optical switches optical device simulators artificial retina chip and digital neuro-chip. He is a member of the Society of Applied Physics. Nonmember Received his B.S. and M.S. degrees in Physics and Methodology from Kyoto University in 1985 and 1987 respectively. He completed the required course work in the doctoral program of the same university in 1990. He joined Mitsubishi Electric Corporation in 1990. At present he is with the Neural & Parallel Processing Technology Development Center. He is involved in research on information processing using nonlinear motive power and optimization. He is a member of the Japan Society of Physics. Received his B.S. and Ph.D. degrees in Electronics Engineering from Tokyo Institute of Technology in 1972 and 1977 respectively. He joined Mitsubishi Electric Corporation in 1977. At present he is the head of the Neural & Parallel Processing Technology Development Center. From 1985 to 1986 he was an invited scholar at California Institute of Technology in the United States. He is involved in research on neural theory optical neural networks artificial retina chip VLSI neuro-chips and optical fiber sensors. He is a member of IEEE OSA International Neural Network Society Society of Applied Physics and Society of Instrumentation and Control.

A new procedure for the optimum design of optoelectronic devices is explained in this paper and an automatic search is made simultaneously for the structure satisfying various demands. The feature of this procedure is in the introduction of cost by which the quantitative evaluation of the structure becomes possible and the global search for the required structure by simulated annealing can be carried out. First, the definition of cost and details of the optimization procedure are clarified. In optimization, in addition to convergence to the minimum point of the cost function (the optimum configuration from theoretical viewpoint), the convergence also is possible in structures with great tolerance to fabrication errors (neighborhood cost (NC) and finite temperature annealing (FTA) methods). Next, these three proposed methods are used in the design of a pnpn differential optical switch and the effectiveness of the methods is verified. The method of cost expression, the relation between annealing parameters, and convergence are investigated. It is shown that cost expression with large degree of freedom improves the search for high-performance structures and the initial temperature of annealing or the fixed temperature of FTA method is the important parameter which sets up the probability of acceptance. Further, it is shown that the convergence cost is inversely proportional to the time spent in annealing. These results are useful guidelines in the optimum design of arbitrary optoelectronic devices.

关键词： optoelectronic devices cost function device design optimization convergence

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Fabrication of SiN films at low temperature by RF biased coaxial-line microwave plasma CVD

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第11期79卷 58-65页

作者： Morita, Y Kato, I Nakajima, T School of Science and Engineering Waseda University Tokyo Japan Received a B.S. in 1992 from the Department of Electronics and Communication Waseda University. He is now enrolled in the Ph.D. program at the same university. He has been involved in research on microwave plasma CVD. He is a member of the Japanese Society of Applied Physics. Received the B.S. and Ph.D. degrees from the Department of Electronics and Communication Waseda University in 1967 and 1973 respectively. In 1973 he joined the faculty of Waseda University becoming an associate professor in 1978. He was Visiting Professor at Manitoba University Canada in 1979–1981. He has supervised research and participated in joint research with die Canadian National Research Council. He became a professor at Waseda University in 1993. He has been involved in research on microwave plasma CVD photonics lasers electronic materials evaluation technologies photonic materials opto-quantum electronics and semiconductor dun films. He is a member of die IEE of Japan die Japan Society of Applied Physics die TV Society die Japanese Vacuum Society and IEEE. Received die B.S. from die Department of Electronics and Communication Waseda University in 1994. He is now enrolled in die master's program at die same university. He has been involved in research on microwave plasma CVD. He is a member of die Japan Society of Applied Physics.

This paper discusses the influence of ion bombardment on the characteristics of SiN films. In this study, the double-tube coaxial-line microwave plasma CVD system, which is suitable for the investigation of ion bombardment, is used to deposit SiN films. The ion bombardment energy is varied by varying the RF bias at constant ion density, As the RF bias is increased, the film density increases and the hydrogen concentration decreases, but the dangling bond density increases. The increase in the film density and decrease of hydrogen concentration are caused by the increase in film surface temperature, while the increase of the dangling bond density is caused by bond breakage due to the N+ ion implantation. When the substrate temperature is 200 degrees C and the RF bias is -175 V, the film density is 3 g/cm(3) and the hydrogen concentration is 9 at.% because of the film surface heating effect of ion bombardment acid also due to substrate heating. Substrate heating at 200 degrees C suppresses the increase in the dangling bond density. It is also demonstrated that the film surface temperature is about 200 degrees C when RF bias is -70 similar to-80 V and the substrate is unheated by any heater.

关键词： microwave plasma CVD SiN film RF bias ion bombardment effect film surface hearing effect

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Affordability, logistics R&D and fleet systems

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NAVAL ENGINEERS JOURNAL 1996年第3期108卷 199-213页

作者： Schulte, DP Skolnick, A He has supported the development and operation of several naval systems including advanced component selection for Trident II fire control and navigation systems. He served as branch manager of the Surface Ship ASW Combat System Branch which acted as the acquisition engineering agent for the AN/SQQ-89 Surface Ship Anti-Submarine Warfare Weapon System. He was then selected to manage the Module Engineering Department which provided engineering support to numerous naval systems including the AN/BSY-1 Submarine Combat System and the Trident II fire control and navigation system. He then served as the deputy program manager for NAVSEA Progressive Maintenance (2M/ATE). He holds a B.S. degree in Electrical Engineering from Purdue University and currently is pursuing a Maste's degree in Public Environmental Affairs at Indiana University—Purdue University Indianapolis. He served at Applied Physics Laboratory/The Johns Hopkins University in missile development then aboard USS Boston (CAG-1) and played leading roles in several weapon system developments (Regulus Terrier Tartar Talos) inertial navigation (Polaris) deep submergence (DSRV) and advanced ship designs (SES). He later was director Combat System Integration Naval Sea Systems Command and head Combat Projects Naval Ship Engineering Center. He led the Navy's High Energy Lasers and Directed Energy Weapons development efforts. He was vice president advanced technology at Operations Research Inc. and vice president maritime engineering at Defense Group Inc. before starting SSC in 1991. Dr. Skolnick holds a B.S. degree in Mathematics and Economics Queens College an M.A. degree in Mathematics and Philosophy Columbia University an M.S. degree in Electrical/Aeronautical Engineering U.S. Naval Postgraduate School and a Ph.D. in Electrical Engineering and Applied Mathematics from Polytechnic University in New York. He is the author of many published papers on engineering design issues source selection procedures and large-scale complex technology problems

The Fleet continues to require high performance systems that can operate with dependability in the seas' unforgiving environments and under hostile action. Those demands are not new. What has changed is the urgent priority formerly assigned to national defense issues. The arguments for continued superpower military strength are now roiled in politics along with unsettled budgets and uncertain force level projections. Current expectations revolve about indefinite fiscal and operational issues (difficult funding constraints and broadband threats). In the actual event of ''doing more with less,'' a practical response is to apply the creative power available from sound engineering judgement and the crucible of experience to the immediate needs of the Fleet. The attempt to shorten the path between advanced development effort and Fleet use has been tried occasionally in the past, often, without exemplary results. The Sustainable Hardware and Affordable Readiness Practices (SHARP) program, is a generic R&D effort under OpNav sponsorship that has been working steadily on sensible solutions to product engineering problems. Armed today with fast-time, large-scale computation abilities and modern tools for technical problem solving coupled with specialized engineering knowledge, it has been refreshed and is underway satisfying existing Fleet needs. The relationship between fully responsive engineering services and current operational needs is always demanding. The connection between advanced engineering development (6.3 category funds) and immediate Fleet usage brings added complexity and challenge, both technical and organizational. Illustrative examples of affordable engineering solutions to ''retain, revise, replace or retire'' questions are presented within the context of both Fleet realities and budgetary limitations. The discussion covers legacy system support, civil/military considerations and Fleet maintenance issues. It describes the substantial and critical payoffs i

关键词： Warships

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The analysis of polarization-insensitive characteristics for semiconductor optical amplifiers with tensile strained multiple quantum wells

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第6期79卷 103-112页

作者： Takaya, H Kambayashi, T Faculty of Engineering Nagaoka University of Technology Nagaoka Japan 940–21 Received his B.S. degree from Nagaoka University of Technology in 1993. In 1995 he entered the Master's program at the University. Received his B.S. degree from Yamanashi University in 1972 and his Ph.D. degree from Tokyo Institute of Technology in 1977. In the same year he became a Research Associate at the Tokyo Institute of Technology. In 1979 he became an Associate Professor at Nagaoka University of Technology the position he holds currently. Between 1981 and 1983 he was a Visiting Researcher at Bath University. He has been engaged in research on optical waveguides opto-integrated circuits optical amplifiers and quantum well devices. He is a member of IEEE and the Japan Applied Physics Society.

In this paper, the aims of our study are to analyze the gain of semiconductor optical amplifiers with tensile strained multiple quantum wells and to examine the structure for polarization-insensitive characteristics for the purpose of showing the design guidelines. Since lasers with conventional lattice-matched multiple quantum wells have large optical confinement coefficient and large gain coefficient for TE mode, they are not polarization insensitive. Since the modal gain is the product of the optical confinement coefficient and the gain coefficient, the elimination of polarization sensitivity requires increasing the gain coefficient for the TM mode by applying the tensile strain to the well layer in order to compensate for the difference in the optical confinement factor. Assuming a multiple quantum well structure, the analysis obtains the strain distribution over the structure and an envelope function of the wave function and calculates the gain using a density matrix method by electron relaxation effect. It includes the band mixing effect of valence bands. As a result, a structure with little modal gain difference over a wide range at 1.55-mu m wavelength has been designed. Also, as a result of examining the effect of deviation from the designed values, it has been found that the variation in the material composition (amount of strain) has a larger effect on the modal gain difference than the variation in the quantum well thickness.

关键词： semiconductor optical amplifier tensile strained multiple quantum wells polarization-insensitive gain laser gain

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Bulk-type domain reversal grating of LiTaO3 crystal fabricated by direct electric field

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第2期79卷 70-77页

作者： Sato, M Ohashi, M Abedin, KS Takyu, C Ito, H Member Research Institute of Electrical Communication Tohoku University Sendai Japan 980–77 Received his B.S. degree from Yamagota University in 1984 and his M.S. and Ph.D. degrees from Tohoku University in 1986 and 1994 respectively. He joined Hitachi Co. in 1986. He became a Research Associate at Ishinomaki Senshu University in 1989 and a Research Associate at Tohoku University in 1993. He has been involved in research on nonlinear optics and optical measurement. He is a member of the Japanese Society of Applied Physics. Nonmember Received his B.S. degree from Kanazawa University in 1992 and his M.S. degree from Tohoku University in 1994. At present he is enrolled in the Ph.D. program at Tohoku University. He has been involved in research on nonlinear optical effect of ferroelectrical material. He is a member of the Japanese Society of Applied Physics. Received his B.S. from Bangladesh University of Engineering and Technology (BUET) in 1988 and became an Assistant Professor at the same institute. He received his M.S. degree from Yamagata University in 1993. He is currently enrolled in the Ph.D. program at Tohoku University. He has been involved in research on nonlinear optical crystals doped with rare earth metals semiconductor lasers and optical fibers. He is a member of the Japanese Society of Applied Physics. Graduated from Konahama Marine High School in 1969 and became a Research Technician at Tohoku University in the same year. He has been involved in research on laser measurement and the processes of semiconductors and dielectric material. Received his B.S. and Ph.D. degrees from Tohoku University in 1966 and 1972 respectively. At present he is a Professor at Tohoku University. He was invited to Stanford University during 1975–1976. He has been involved in research on laser and nonlinear optics integrated optics and semiconductor lasers. He received the Yonezawa Award in 1971 and Manuscript Award in 1989. He is a member of the Japanese Society of Applied Physics IEEE and OSA.

Bulk-type domain reversal gratings of LiTaO3 crystal were fabricated at room temperature by the direct electric field method, The nonlinear optical. property of the crystal was evaluated by quasi-phase matching. The period of the bulk-type domain reversal gratings on an LiTaO3 substrate was 7.5 mu m and the domain reversal extended to the entire substrate thickness of 500 mu m. The experimental normalization efficiency was 0.46%/W . cm in carder quasi-phase matching and was close to the theoretical value (0.48%/W . cm). This result indicates that high-efficiency nonlinear interaction could be achieved by using the bulk-type domain reversal grating, The bulk-type domain reversal grating of nonlinear optical crystal such as LiTaO3 is expected to be useful for compact nonlinear optical devices and integrated laser sources.

关键词： bulk-type domain reversal grating electrical field-induced polarization quasi-phase matching

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Propagation properties of Love wave-type surface-acoustic wave on alpha-quartz

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第2期79卷 24-30页

作者： Isobe, A Hikita, M Asai, K Central Research Laboratory Hitachi Ltd. Kokubunji Japan 185 (Member) graduated from the Department of Physics Tohoku University in 1986 and completed an M.S. course in 1988. In that year he joined Hitachi Ltd. Presently he is with Hitachi Central Research Laboratory. He has been engaged in research on surface acoustic wave devices. (Member) completed the doctoral program of the Department of Electronic Engineering Hokkaido University in 1977 and remained as a research student. In 1978 he joined Hitachi Ltd. Presently he is a Senior Researcher at Hitachi Central Research Laboratory. He holds a Doctor of Engineering degree. He has been engaged in research on the electromagnetic field analysis boundary value problem of the surface acoustic wave interaction of the acoustic wave and optics high-performance SAW filter high-frequency circuit for satellite communication and mobile communication. In 1981 he received an Academic Promotion Award from I.E.I.C.E. In 1990 he received an IEEE MTT Microwave Prize Award. In 1991 he received a Kanto District Invention Award (from the Invention Society) and in 1993 a Commendation for Research Accomplishment from the Director of Science and Technology Agency. He is a senior member of IEEE. (Member) graduated from the Department of Mechanical Engineering Matsuyama Technical High School in 1984 and joined Hitachi Central Research Laboratory. In 1988 he graduated from the Department of Electronic Engineering Hitachi Keihin Technical School. Since then he has been engaged in research and development of the process technology of magnetic bubble memory and surface acoustic wave devices. Presently he is with the Communication Systems Department.

As a piezoelectric substrate for surface acoustic wave devices, the LST cut quartz has good temperature characteristics and low propagation loss. However, as the thickness of the metal electrodes on the substrate surface is increased, propagation loss also increases. Further, the electromechanical coupling coefficient is small. In this paper, a cut angle of the quartz substrate is sought that has excellent temperature stability, low propagation loss, and a large electromechanical coupling coefficient in the present of metal electrode films. For the rotated Y-cut substrate in the neighborhood of the LST cut, the propagating surface acoustic wave (SAW) merle changes from the leaky surface wave to the Love wave-type surface acoustic wave for which. no propagation loss occurs in theory while the electromechanical coupling coefficient increased to 0.5 percent at the maximum if gold is used for the electrodes and the propagation direction of the SAW is shifted from the X axis. This is shown by simulation. By experiment, it is shown that the second-order temperature coefficient is on the same order as that of the ST-cut quartz substrate.

关键词： surface acoustic wave quartz Love wave temperature characteristics

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High-frequency analysis of radiation field excited by incident whispering-gallery mode over concave-to-convex boundary

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第7期79卷 10-21页

作者： Goto, K Ishihara, T National Defense Academy Yokosuka Japan 239 Graduated in 1984 from the Department of Electrical Engineering National Defense Academy where he completed the graduate program in 1989. At present he is a Research Associate. He has been engaged in research on the propagation and scattering of the electromagnetic waves. Received his B.S. (equivalent) degree in Electrical Engineering from the National Defense Academy of Japan in 1970 his M.S. and Ph.D. degrees from the Polytechnic Institute of New York (presently the Polytechnic University) Farmingdale NY in 1975 and 1978 respectively and a Dr. of Eng. degree from Tohoku University Sendai Japan in 1983. From June to December 1978 he was a Research Fellow of the Polytechnic Institute of New York. From January 1979 to March 1982 he was with the Defense Research Center of the Defense Agency. In April 1982 he became a Lecturer at the National Defense Academy. From September 1984 through February 1985 he was a Visiting Scholar at the Polytechnic Institute of New York. In 1985 he became an Associate Professor at the National Defense Academy where he was promoted to Professor in 1990. He has been engaged in research on propagation and scattering of electromagnetic waves and acoustic waves. He is a member of the IEEE the Acoustic Society of Japan the Applied Physics Society and the Ocean Acoustic Society.

An asymptotic method of analysis is studied for the radiation field when the lowest-order whispering gallery (WG) modes propagating from the concave side of the concave-to-convex boundary with a variable radius of curvature are radiated into the free-space on the convex side. The modal ray congruences of the WG mode are radiated into the free space after being converted to geometrical rays. Both the caustics and the shadow boundaries are created in the space. As the expression of the radiated field near the caustic, the modal rays incident into the concave part are used for deriving the physical optics integral. By applying the high-frequency asymptotic analysis in the case of two saddle points closely spaced to the evaluation of the integral, the uniform asymptotic solution was derived. Also, as the radiating field on the sufficiently shadow side of the caustic, the complex ray solution was derived. On the other hand, as the radiating field in the transition region near the shadow boundary caused by the convex region, an asymptotic solution was derived in the form of an extension of the conventional UTD (Uniform GTD) to the case where the geometrical ray converted from the modal ray is incident to the boundary. The numerical results obtained by various asymptotic expressions are compared with the reference solution and the geometrical optics figure drawn by the modal ray tracing. The effectiveness of the asymptotic solution and the propagation and radiation phenomena of the WG mode were derived.

关键词： whispering-gallery mode concave-to-convex boundary radiating field high-frequency asymptotic analysis modal ray

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Nonlinear electrostatic waves in collisionless plasmas

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Physical Review E 1995年第3期52卷 3015-3015页

作者： Mark Buchanan J. Dorning Engineering Physics Program and Department of Applied Mathematics University of Virginia Charlottesville Virginia 22903

We report results concerning small amplitude Bernstein-Greene-Kruskal (BGK) waves, which are exact undamped traveling wave solutions of the nonlinear Vlasov-Poisson-Ampère equations for collisionless plasmas. Building upon previous work, we first develop a simple but powerful formalism that facilitates a methodical investigation of the types and properties of small amplitude BGK plasma waves that can exist near a given collisionless plasma equilibrium. Using this formalism, we then show that any physically relevant spatially uniform plasma equilibrium supports nonlinear spatially periodic BGK waves that are described by the Vlasov dispersion relation in the small amplitude limit. We demonstrate also that these equilibria are characterized by a discrete set of critical velocities vc(i), i=1,2,..., at which BGK solitary waves of vanishingly small amplitude can propagate in the plasma. The existence of these exact nonlinear spatially periodic and solitary wave solutions illustrates the fundamental incompleteness of the linear Vlasov-Landau theory of plasma waves since, by virtue of particle trapping, these nonlinear waves neither damp nor grow even when their amplitude is arbitrarily small.

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