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plasma immersion ion implantation with dielectric substrates

IEEE TRANSACTIONS ON plasma SCIENCE 1996年第6期24卷 1383-1388页

作者： Linder, BP Cheung, NW Plasma Assisted Materials Processing Laboratory Department of Electrical Engineering and Computer Science University of California Berkeley CA USA

plasma immersion ion implantation (Pm) is a novel implantation technique for high-dose/high-current implants. Using the SPICE circuit simulator to model the PIII process, the sheath voltage and ion energy distribution are examined. Implanting into a dielectric substrate results in a significant voltage buildup in the wafer, reducing the effective implant energy. Increasing the pulse voltage raises the dose/pulse, but at the cost of an expanded implant energy spread. Increasing the plasma ion density also raises the dose/pulse, but at the cost of a wider implant energy spread and a lower coupling efficiency. Increasing the substrate thickness reduces both the coupling efficiency and dose/pulse while broadening the energy spread. The large voltage generated across the dielectric substrate decreases the charge neutralization time significantly, reducing the possibility of gate oxide damage.

关键词： plasma immersion ion implantation gate oxide Implants and Prostheses circuit simulator Dielectric substrates Shock voltage Ion energy distribution ion densities

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plasma immersion ion implantation for semiconductor processing

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MATERIALS CHEMISTRY AND PHYSICS 1996年第2-3期46卷 132-139页

作者： Cheung, NW Plasma Assisted Materials Processing Laboratory Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA

plasma immersion ion implantation (PIII) is a technique which promises high dose rate implantation and compatibility with large-area processing. When a large negative bias is applied to the substrate which is immersed inside a high ion-density plasma, all ion species present will be implanted without ion mass selection, Innovations of this techniques include: implantation time independent of implantation area, capability to perform concomitant deposition and implantation, and simplicity of machine design and maintenance. This paper reports the modeling of PIII plasma dynamics and several demonstrated semiconductor processing applications such as plasma doping, subsurface material synthesis, ion beam mixing, microcavity engineering, and surface modifications. Several processing issues such as substrate charging and dosimetry will also be discussed.

关键词： ion implantation plasma immersion ion implantation shallow junctions SIMOX

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plasma immersion ion implantation reactor design considerations for oxide charging

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SURFACE & COATINGS technology 1996年第1-2期85卷 64-69页

作者： En, W Linder, BP Cheung, NW Plasma Assisted Materials Processing Laboratory Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA

The effects of wafer bias and plasma parameters on thin oxide charging during plasma immersion ion implantation (PIII) are simulated. The simulator has been shown to determine accurately the charging currents generated during PIII. The dependence of the plasma electron temperature, ion density and plasma uniformity on charging damage in metal oxide semiconductor capacitor structures is investigated. A lower plasma electron temperature is shown to reduce charging damage. Simulation and experimental results show that for a given voltage pulse waveform there is a range of bias repetition rates allowed by limiting the charging damage below a threshold value. Within this range there exists a switch-over repetition rate that minimizes the charging damage.

关键词： plasma immersion ion implantation oxide charging wafer bias

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Modeling of oxide charging effects in plasma processing

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Journal of Vacuum Science & technology B: Microelectronics processing and Phenomena 1996年第1期14卷 552-552页

作者： En, William Linder, Barry P. Cheung, Nathan W. Plasma Assisted Materials Processing Laboratory Department of Electrical Engineering and Computer Sciences University of California Berkeley California 94720

An analytical model of oxide charging in plasma processing is presented. The model simulates the interactions of the plasma with semiconductor device structures on the wafer and the substrate bias to determine the charging induced in thin gate oxides. This model agrees well with experimental data for pulsed substrate bias. The simulation shows that a lower plasma electron temperature can reduce the charging damage. Well structures modulate the charging damage, with p wells charging more negatively and n wells charging more positively than an identical case without a well structure. Two‐dimensional charging effects such as plasma nonuniformities and antenna structures have also been successfully modeled. Antenna‐type device structures are shown to enhance the charging damage in both capacitor and well structures.

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A new time series classification approach

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SIGNAL processing 1996年第2期54卷 191-199页

作者： Plataniotis, KN Androutsos, D Venetsanopoulos, AN Lainiotis, DG Department of Electrical and Computer Engineering Digital Signal & Image Processing Laboratory University of Toronto 10 King's College Rd. Toronto Ontario M5S 3G4 Canada Intelligent Systems Technology 3207 S. Hwy. A1A Melbourne Beach FL-32951 USA

A new, robust and computationally attractive approach to the problem of time series classification is discussed in this paper. Both the Bayesian as well as a new adaptive classification scheme for source selection are... 详细信息

关键词： time series classification neural networks logistic function

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Implications of a segmentation-based motion compensation scheme for the case of a block transform encoder

Implications of a segmentation-based motion compensation sch...

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International Conference on Acoustics, Speech, and Signal processing (ICASSP)

作者： M. Sipitca Department of Electrical and Computer Engineering Digital Signal Processing Laboratory Georgia Institute of Technology Atlanta GA USA

Sipitca and Madisetti (see VCIP '96, Orlando, Florida, 1996) have proposed the use of analog position sensors for a more accurate motion compensation on videoconferencing sequences. We investigate the results of including such a motion compensation scheme in a transform based encoder. The more successful motion compensation makes the resulting displaced frame difference (DFD) less correlated. In fact, the autocorrelation function goes practically to zero for a lag larger than 4-5 pels. Therefore, the 4/spl times/4 DCT can be used instead of the 8/spl times/8 DCT. This helps in dealing better with the relatively small regions where the DFD takes on larger values-on the border regions and in the new information regions. Finally, a block swapping algorithm and an appropriate error measure are introduced.

关键词： Motion compensation computer aided software engineering Head Design for disassembly Discrete cosine transforms Image segmentation Microphones Image edge detection Paper technology Digital signal processing

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ScaleNet-multiscale neural network architecture for time series prediction

ScaleNet-multiscale neural network architecture for time ser...

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IEEE Convention of the electrical and ELectronic Engineers in Israel

作者： A.B. Geva A.K. Altman Electrical and Computer Engineering Department Ben-Gurion University of the Negev Beersheba Israel Electrical Engineering Department The Physiological Signal Processing Laboratory Technion-Israel Institute of Technology Israel

The effectiveness ofthe multiscale neural network (NN) architecture for time series prediction of nonlinear dynamic systems has been investigated. The prediction task is simplified by decomposing the time series into separate scales of wavelets, and predicting each scale by a separate multilayer perceptron NN. The different scales of the wavelet transform provides an interpretation of the series structures and information about the history of the series, using fewer coefficients than other methods. In the next stage, the predictions of all the scales are combined, applying another perceptron NN, in order to predict the original time series. Each network is trained by the backpropagation algorithm using the Levenberg-Marquadt method. The weights and biases are initialized by new clustering methods, which improved the prediction results compared to random initialization. Three sets of data were analyzed: the sunspots benchmark, fluctuations in a far-infrared laser and a numerically generated series (set A and D in the Santa Fe competition). Taking the ultimate goal to be the accuracy of the prediction, we find that our suggested architecture outperforms traditional nonlinear statistical approaches.

关键词： Neural networks Multilayer perceptrons Wavelet transforms History Backpropagation algorithms Clustering methods Data analysis Fluctuations Iron Accuracy

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SOI material technology using plasma immersion ion implantation

SOI material technology using plasma immersion ion implantat...

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IEEE SOI-3D-Subthreshold Microelectronics technology Unified Conference (S3S)

作者： X. Lu S.S.K. Iyer J. Min Z. Fan J.B. Liu P.K. Chu C. Hu N.W. Chueng Plasma Assisted Materials Processing Laboratory Department of Electrical Engineering and Computer Sciences University of California Berkeley CA USA Department of Physics and Materials Science City University of Hong Kong Hong Kong China

Silicon on insulator (SOI) devices have many attractive applications in integrated circuit technology. The high cost of manufacturing the SOI wafers, however, prevents it from being widely accepted for mass production. Separation by plasma implantation of oxygen (SPIMOX), an extremely high through-put SIMOX formation process using plasma immersion ion implantation (PIII) has demonstrated promising results. In this paper, an improvement on the SPIMOX process is presented. High-dose implantation is a costly procedure for the "smart cut" process. A low cost, high through-put implantation by hydrogen or helium plasma is demonstrated as a feasible, novel process for SOI technology using PIII.

关键词： Materials science and technology plasma immersion ion implantation Silicon on insulator technology Costs Integrated circuit technology Manufacturing Mass production plasma applications plasma devices plasma materials processing

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Design of optimal digital FIR filters with arbitrary magnitude and phase responses

Design of optimal digital FIR filters with arbitrary magnitu...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： L.J. Karam J.H. McClellan Telecommunications Research Center Department of Electrical Engineering Arizona State University Tempe AZ USA Digital Signal Processing Laboratory School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

This paper presents a new multiple-exchange ascent algorithm for designing optimal Chebyshev digital FIR filters with arbitrary magnitude and phase specifications. Compared to existing Chebyshev design techniques, the new design algorithm exhibits faster convergence while maintaining high accuracy, and is guaranteed to converge to the optimal solution. In addition, the proposed algorithm reduces to the classic second Remez (Parks-McClellan) algorithm when real-only or imaginary-only filters are designed and is, therefore, a true generalization of the classic Remez algorithm to the complex case.

关键词： Finite impulse response filter Digital filters Chebyshev approximation Algorithm design and analysis Signal processing algorithms Frequency response Electronic mail Design optimization Filtering Robustness

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Detection of the complex amplitude distribution of a kinoform using an iterative Fourier-transform algorithm

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第1期79卷 11-21页

作者： Akahori, H Faculty of Engineering Kanagawa Institute of Technology Atsugi Japan 243-02 Graduated in 1963 from the Department of Electrical Engineering Tokyo Institute of Technology and joined the Electrotechnical Laboratory of the Ministry of International Trade and Industry. Later he obtained a Dr. of Eng. degree. In 1987 he became a Professor in the Department of Information and Computer Sciences Kanagawa Institute of Technology. He has been engaged in research on optical information processing and digital holography.

This paper presents a method for recovering, by using the iterative Fourier-transform algorithm, the complex amplitude transmittance of a recorded one-dimensional Fourier transform-type kinoform. A method for estimating the phase-recording characteristic of the kinoform fabrication system by comparing the retrieved phase with the theoretical phase is also presented. The spatial variations of both the magnitude and phase inside each of the kinoform cells were evaluated to improve estimation of the phase-recording characteristic. The initial estimate of the kinoform phase given to the algorithm was derived using the knowledge that the recorded phase is an approximation of the phase to be recorded. The relationship between the shift of the central sampling point of the Fourier image from the optical axis and the retrieved phase of the kinoform is investigated;a kinoform phase pattern with a structure suitable for indirectly detecting the shift is then proposed. In an experiment using a kinoform fabrication system including a photographic process, the recorded phase distribution is retrieved at five sampling points of each cell. The phase-recording characteristic is estimated using the retrieved phase values. Next, a computer simulation is executed to reveal the influence of errors in the measurement of magnitude. The simulation result shows that the recorded phase distribution can approximately be retrieved when the rms error added to the magnitude is approximately 10 percent of its average. Furthermore, the validity of the phase distribution retrieved in the experiment is discussed.

关键词： Kinoform Gerchberg-Saxton algorithm phase retrieval phase-recording characteristic

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