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Anomaly Detection and Imaging with X-Rays (ADIX) VI 2021

作者： Greenberg, Joel A. Stryker, Stefan Carpenter, Josh Kapadia, Anuj J. Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Medical Physics Graduate Program Duke University DurhamNC27708 United States Carl E. Ravin Advanced Imaging Laboratories Dept. of Radiology Duke University DurhamNC27708 United States Quadridox Inc. HillsboroughNC27278 United States

ISBN: (数字)9781510643147

ISBN: (纸本)9781510643130

Detecting illegal drugs in packages without opening the package is a challenge. X-ray diffraction tomography offers the potential capability of uniquely identifying illegal drugs within a package based on their atomic structure. To understand the potential for XRD-based drug detection, we developed a method for building a library of X-ray diffraction drug signatures. In addition, we used a compact, multi-modality fan beam X-ray imaging system (combining transmission and X-ray diffraction) to distinguish oxycodone from non-prescription medicine when concealed within different types of containment. © 2021 SPIE.

关键词： X ray diffraction

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Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Application of Deep Artificial Neural Network to Model Chara...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sagarika Dash Yiming Li Wen-Li Sung Parallel and Scientific Computing Laboratory National Yang-Ming Chiao Tung University Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Biomedical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Center for mm Wave Smart Radar System and Technologies National Yang-Ming Chiao Tung University Hsinchu Taiwan

In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$ . We do also discuss the circuit simulation possibility by applying the ANN approach.

关键词： Semiconductor device modeling MOSFET Gallium arsenide Artificial neural networks Predictive models Logic gates Silicon

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Landau Polaritons in a Full-Dielectric Three-Dimensional Photonic-Crystal Cavity

Landau Polaritons in a Full-Dielectric Three-Dimensional Pho...

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CLEO: Science and Innovations, S and I 2022

作者： Tay, Fuyang Mojibpour, Ali Liang, Shuang Baydin, Andrey Ahmadivand, Arash Peraca, Nicolas Marquez Xu, Hongjing Gardner, Geoff C. Manfra, Michael J. Hagenmüller, David Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Microsoft Quantum Purdue Purdue University West LafayetteIN47907 United States School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States School of Materials Engineering Purdue University West LafayetteIN47907 United States Université de Strasbourg CNRS Strasbourg67000 France Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States

ISBN: (纸本)9781557528209

We fabricated a full-dielectric three-dimensional photonic-crystal cavity containing an ultrahigh-mobility two-dimensional electron gas. By applying a strong perpendicular magnetic field, we created Landau polaritons originating from the ultrastrong coupling of electrons with cavity modes. © Optica Publishing Group 2022, © 2022 The Author(s)

关键词： Polariton

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Histogram specification by assignment of optimal unique values

arXiv

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arXiv 2021年

作者： Ramos, Vítor S. de Q. Silveira, Luiz Felipe de Q. Silveira Júnior, Luiz Gonzaga Electrical and Computer Engineering Graduate Program Federal University of Rio Grande do Norte Natal Brazil Computer Engineering and Automation Department Federal University of Rio Grande do Norte Natal Brazil Communications Engineering Department Federal University of Rio Grande do Norte Natal Brazil

In this paper, we propose two novel algorithms for histogram specification and quantile transformation of data without local information. These are core techniques that can serve as building blocks for applications that require specifying the sample distribution of a given set of data. Histogram specification is best known for its image enhancement applications, whereas quantile transformation is typically employed in data preprocessing for data normalization. In signal processing, methods often require temporal or spatial information;in data preprocessing, methods work by interpolation or by approximation, drawing from results in computational statistics, and have a trade-off between speed and quality. It is nontrivial to accommodate for cases that do not have local information (e.g., tabular data) while also providing a fast, exact solution. For that, we take up a concept in image processing called group mapping law and propose an extension. The proposed extension allows us to formulate a convex functional where we look for the best approximation between the output unique values and the reference histogram. Then, we apply the ordered assignment solution, a result in optimal transport, to reconstruct the output from the optimal unique values. Two sets of results show the effectiveness of the proposed algorithms when compared to traditional and state-of-the-art methods. The proposed algorithms are fast, exact, and least p-norm optimal. Further, we define the algorithms as generic data processing methods. Thus, contributions from this paper can be easily incorporated in applications spanning many disciplines, especially in applied data science. Copyright © 2021, The Authors. All rights reserved.

关键词： Graphic methods

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Scaling Limitations of Line TFETs at Sub-8-nm Technology Node

Scaling Limitations of Line TFETs at Sub-8-nm Technology Nod...

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2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Thoti, Narasimhulu Li, Yiming Kola, Sekhar Reddy Parallel and Scientific Computing Laboratory Eecs International Graduate Program Institute of Communications Engineering Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TFETs). Key factors of the considered device, such as the doping and the thickness (tn) of n-epitaxial region, and source-to-drain length (LSDeff) scaling cannot be tuned anymore to boost the device characteristics for the sub-8-nm technology node. The main results of this study indicates that the engineering acceptable performance are achieved at a low doping of 5 1018 cm-3, an optimal tn as low (about 0.5 nm), and a LSDeff greater than 12.5 nm. Hence, the line TFETs below sub-8-nm faces serious bottleneck of scaling and cannot be further scaled with the conventional scaling rule at all. © 2020 IEEE.

关键词： Tunnel field effect transistors

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Improved Feature Generalization in Smaller Datasets with Early Feature Fusion of Handcrafted and Automated Features for Content Based Image Classification 11

Improved Feature Generalization in Smaller Datasets with Ear...

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11th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2020

作者： Das, Rik Arshad, Mohammad Manjhi, P.K. Thepade, Sudeep D. Xavier Institute of Social Service Dept.of Post Graduate Program in Information Technology Ranchi India Vinoba Bhave University Hazaribag India Vinoba Bhave University Dept.of Mathematics Hazaribag India Pimpri Chinchwad College of Engineering Computer Engineering Dept. Pune Maharashtra India

ISBN: (纸本)9781728168517

Diverse techniques of feature extraction are carefully crafted by researchers in the domain of content based image classification for improved categorization of image data. These are handcrafted techniques of descriptor definition which have mostly emphasized in representing a particular feature of the query image. Recent advancements in deep neural networks have enabled extraction of features in automated manner without any human intervention. The process considers multiple dimensions of image properties in designing content based descriptors. However, deep features have shown limitations for generalization of feature vectors when number of training instances are small. The pre-trained CNN networks have also revealed limitations in generalization of extracted features from smaller datasets. This work has attempted to address this issue by designing fusion based architecture. In the process, the authors have experimented with features extracted with individual techniques comprising of handcrafted extraction and automated neural network based extraction from a small dataset. The process of feature extraction is carried out on an imbalanced dataset for which the classification evaluation is done with F1 Score. The experimental process has revealed better feature generalization with enhanced classification performances by application of early fusion of extracted features compared to that of features extracted with single techniques. © 2020 IEEE.

关键词： Extraction

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Three-Phase Integrated PFC AC-AC Half-Bridge Boost Rectifier and Class D Resonant Inverter with Weak Coupled Coils for IH Application

Three-Phase Integrated PFC AC-AC Half-Bridge Boost Rectifier...

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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Ruan C. M. Gomes Montiê A. Vitorino Maurício B. R. Corrêa Post-Graduate Program in Electrical Engineering (PPgEE–COPELE) Federal University of Campina Grande (UFCG) Campina Grande PB Brazil

ISBN: (数字)9781728148298

ISBN: (纸本)9781728148304

This paper presents a three-phase integrated PFC AC-AC resonant inverter with boost effect for Induction Heating (IH) Application. This converter is composed by three independent half-bridge boost rectifier and class D resonant inverters with non-smoothed DC link that achieve high power factor operation. The magnetic coupling of the three coils was measured for characterizing the resonant behavior of the arrangement. Experimental results validate the modes of operation with ZVS and the converter performance in the entire power input range (PF and THD).

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Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garnet

Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garne...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Kritzell, T. Elijah Bao, Junzhe Doumani, Jacques Lee, Jae Joon Xu, Hongjing Tay, Fuyang Nojiri, Hiroyuki Bamba, Motoaki Baydin, Andrey Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Institute for Materials Research Tohoku University Sendai980-8577 Japan The Hakubi Center for Advanced Research Kyoto University Kyoto606-8502 Japan Department of Physics I Kyoto University Kyoto606-8502 Japan Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Material Science and NanoEngineering Rice University HoustonTX77005 United States

We examine ultrastrong coupling of an ensemble of paramagnetic spins in Gd3Ga5O12 with terahertz photons in the presence of a high external magnetic field both in the bulk and thin-film limits. © 2023 The Author(s)

ISBN: (纸本)9781957171258

关键词： Photons

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Analysis of Negative Capacitance MOSFETs Characteristic with Spacer

Analysis of Negative Capacitance MOSFETs Characteristic with...

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2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Lee, Yu-Chun Kola, Sekhar Reddy Chen, Chieh-Yang Chuang, Min-Hui Li, Yiming Parallel and Scientific Computing Laboratory Institute of Biomedical Engineering Institute of Communications Engineering Eecs International Graduate Program Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

In this work, our study comprises of design and investigation on negative capacitance (NC), metal-oxide-semiconductor (MOS) field effects transistors (MOSFETs) with spacer and source/drain (S/D) overlap engineering. The scope of the work is to boost the performance and high-energy efficiency of the studied NC-MOSFETs by using the ferro electric material (FE). The NC-MOSFETs with the spacer technology can achieve the admirable Ion/Ioff ratio and subthreshold swing (SS), compared with planar MOSFETs. It makes device scaling possible by eliminating the short channel effect (SCE). We further estimated the effect of FE thickness and spacer, which are another critical parameter of obtaining better electrical characteristics and reducing SS. © 2020 IEEE.

关键词： Capacitance

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Realizing and Experimentally Testing a Reluctance-Based Magnetic Lead Screw 19

Realizing and Experimentally Testing a Reluctance-Based Magn...

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19th International Symposium on Electromagnetic Fields in Mechatronics, electrical and Electronic engineering, ISEF 2019

作者： Cirolini, Mateus Filho, Aly Ferreira Flores Eckert, Paulo Roberto Franchi, Lucas Dalla Corte Federal University of Rio Grande Do sul Post-Graduate Program in Electrical Engineering Porto Alegre90035-190 Brazil

ISBN: (纸本)9781728115603

This paper presents the realization and the experimental tests of a new type of reluctance-based magnetic lead screw (RBMLS) that is attractive for many potential applications. The proposed topology presents structure simplification with the implementation of discretized permanent magnets (PM) and ferromagnetic semi-rings. The proposed RBMLS has PMs only in one of its movable parts, making it suitable for long-stroke applications. The dynamic experimental results for the realized prototype are going to be compared to the 3-D finite-element method (FEM) outcomes. Experimental static results have already been obtained and show good agreement. © 2019 IEEE.

关键词： Screws

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