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Influences of vertically staggered blades arrangement and draft-tubes spacing field on the flow shear stress in the vertical impinging stream reactor

Influences of vertically staggered blades arrangement and dr...

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International Conference on Materials for Renewable Energy and Environment

作者： Yang, Xia Zhang, Tao Liang, Liyun Wu, Yanyang Liu, Fengliang Bi, Yu Guo, Jia School of Mechanical and Electrical Engineering Wuhan Institute of Technology Wuhan 430073 China China Ship Development and Design Center Wuhan Hubei 430064 China School of Civil Engineering TIANJIN University Tianjin 300072 China Key Laboratory for Green Chemical Process Ministry of Education Wuhan Institute of Technology Wuhan 430073 China

ISBN: (纸本)9781612847504

Flow turbulence intensity is one of the most important indexes in measuring the shear performance of vertical impinging stream reactor (VCISR). The staggered forms of the upper and lower blades and the distances among draft-tube are the significant factors affecting the turbulence intensity in the reactor. In order to explore the law that the structure parameters impact the internal flow field, a series of the numerical simulations are employed to investigate the flow field under different conditions, including various vertically staggered arrangement and diverse draft-tubes spacing in the VCISR. The inclination angle of the blades is set as 45 and the rotate speed is adjusted as 900rpm. The staggered angles of two paddles are set as 15, 30, 45, 60, respectively. Two draft-tubes spacing L are set as 8, 10, 12, 14 cm, severally. The computation results show that the turbulence intensity on the characteristics impact surface is the maximum under the condition of =30, L=12 cm, at the same time the shear stress is also maximal. In this paper, power consumption and rotating moment of blades are discussed in the reactor. When =15 and L=8 cm, consuming energy of the reactor and the energy consumption under unit average intensity are minimum;the moment of the rotated blades is minimum at =30, L=12 cm. All the results provide the references for selection of the reactor motor and the materials of rotation axes as well as energy consumption. © 2011 IEEE.

关键词： Shear stress

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Vertical diffusion and CVD tool for next-generation semiconductor devices

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Hitachi Review 2006年第2期55卷 88-92页

作者： Shimada, Masakazu Hirano, Mitsuhiro Maeda, Takahiro Wang, Jie Vertical Equipment Design and Engineering Department Toyama Works Mass Production Process Development Department Toyama Works Development Department I Semiconductor Equipment System Laboratory

OVERVIEW: In regard to recent patterns in semiconductor fabrication, two features are clear: mass production of a few product varieties, such as DRAMs and MPUs, or small amount production of many product varieties, such as system LSIs. From now onwards, however, demands for shortening the fabrication period will grow. In the case of large batches (processing 100 to 125 wafers), the standby time needed for output adjustment gets longer, thereby lengthening the fabrication period significantly. Moreover, on top of increases in gas generation and power consumption, it is also a problem that the quantity of dummy wafers consumed in making up for several defective wafers also increases, and the CoO rises dramatically. In response to these challenges, aiming at higher productivity, Hitachi Kokusai Electric Inc. has developed a vertical-type diffusion and CVD tool - called "QUIXACE" - for handling "quick turnaround time" with good process performance at high throughput. With this tool, we will further contribute to improving the production of semiconductor devices.

关键词： Diffusion

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Submerged type incinerator heat recovery by fluidised bed heat exchanger

Submerged type incinerator heat recovery by fluidised bed he...

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CHISA 2006 - 17th International Congress of Chemical and process Engineering

作者： Hirata, Kentaro Kolar, Petr Nakazato, Tsutomu Hui, Chi-Wai Kato, Kunio Process Development and Design Laboratory MCC-Group Mitsubishi Chemical Corp. 1 Toho-cho Yokkaichi Mie 510-8530 Japan Department of Biological and Chemical Engineering Gunma University 1-5-1 Tenjin-cho Kiryu 376-8515 Japan Chemical Engineering Department Hong Kong University of Science and Technology Clear Water Bay Hong Kong Hong Kong

ISBN: (纸本)8086059456

At chemical processing plants, incinerators that burn wastewater and waste oil generate a great deal of heat that should be recovered. However, this high-temperature waste gas contains metal and inorganic compounds in melting or solid phases creates serious scaling problem on heat exchanger surfaces if a traditional heat exchanger were used for recovering the waste heat. In this study, a fluidized bed heat exchanger has been developed in which the tube surface of the heat exchanger could be cleaned automatically during the operation. The basic operating conditions, sizing of the equipment and other design issues have been considered based on powder particle fluidized bed concept. This paper describes the development process of the technology.

关键词： Heat exchangers

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Failure analysis system for submicron semiconductor devices

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Hitachi Review 2006年第2期55卷 68-72页

作者： Fukui, Munetoshi Mitsui, Yasuhiro Nara, Yasuhiko Yano, Fumiko Furukawa, Takashi Application Technology Department Advanced Equipment and Systems Sales Division Hitachi High-Technologies Corporation Advanced Microscope Systems Design Department Nanotechnology Products Business Group Hitachi High-Technologies Corporation Failure Analysis Technology Group Process and Device Analysis Engineering Development Department Renesas Technology Corp. Advanced Technology Research Department Central Research Laboratory

Failure analysis of semiconductor device is becoming increasingly difficult as VLSI technology evolves toward smaller features and semiconductor device structures become more complex. Especially considering that the defective area obtained through diagnosis pin-pointing faulty sites is not the same size as the area subjected to physical analysis, and this disparity becomes more pronounced as feature sizes shrink. This prompted us to develop an extremely fine scaled SEM mechanical probing system permitting identification of minute fault sites. The development involved a number of related projects including investigation of a precision probe and stage mechanism that can deal with submicron semiconductor devices, a six-probe mechanism for expanded capabilities of performing inverter measurements and precision single transistor measurements, a probe and sample exchange mechanism that works while under vacuum to achieve high throughput, and a robust CAD navigation system. The system is now ready and available for practical application to 65-nm feature devices, and can be readily adapted to at least the next couple of generation nodes.

关键词： Failure analysis

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Environment-friendly block made from steel slag 8

Environment-friendly block made from steel slag

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2004 8th CANMET/ACI International Conference on Fly Ash, Silica Fume, Slag, and Natural Pozzolans in Concrete

作者： Matsunaga, H. Kogiku, F. Takagi, M. Tanishiki, K. Nakagawa, M. Slag and Refractories Research Department Steel Research Laboratory ofJFE Steel Corporation Japan Plant Development and Design Section Plant Engineering Department West Japan Works of JFE Steel Corporation Japan Department Manager of Environment and Process Technology Center of Nippon Steel Corporation Japan

ISBN: (纸本)9780870311468

A new environment-friendly block, called "steel slag hydrated matrix", consisting mainly of steelmaking slag, ground granulated blast furnace slag, fly ash, and water was developed. Steel slag hydrated matrix has the following features: 1) Made from 100% recycled resources, 2) same strength performance as ordinary concrete, 3) excellent wear resistance, 4) low alkaline dissolution, and 5) excellent growth habitat for biofouling organisms in marine environments. In repair work at Mizushima Port, Okayama Prefecture, Japan, 150,000 tons of steel slag hydrated matrix material were used. The ease of use in construction and low impact on ecological systems of the new material were confirmed in the course of this work. © 2004 American Concrete Institute. All rights reserved.

关键词： Slags

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Methods for reducing SO/sub 2/ emissions

Methods for reducing SO/sub 2/ emissions

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IEEE Cement Industry Technical Conference

作者： S.W. Miller J.P. Hansen Process Design & Laboratory F.L. Smidth Inc. USA Research & Development Engineer F.L. Smidth Inc. USA

In recent years, environmental concerns have been playing a larger role in the operation, modernization and erection of cement plants. This paper discusses laboratory investigations of how SO/sub 2/ is formed in more detail and present different methods for reducing SO/sub 2/ emissions, including their relative costs and their impact on the process operation.

关键词： Laboratories Production Kilns Legislation Inductors Oxidation Poles and towers Cement industry process design Construction

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Fast-switching-speed, low-forward-voltage-drop static induction (SI) thyristor

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ELECTRICAL ENGINEERING IN JAPAN 1996年第3期116卷 107-115页

作者： Maeda, M Keno, T Suzuki, Y Abe, T Matsushita Electric Works Ltd. [?]Mitsuhide Maeda received his B.S. degree in Material Physics from Osaka University in 1982. In 1982 he joined the Research and Development Division Matsushita Electric Works Osaka where he was first engaged in solar cell design and process technology. From 1983 to 1993 he was with the Semiconductor Research Laboratory where he has been engaged in Static Induction Device design and process technology for power devices. Since 1994 he has been with the Central Research Laboratory where he has been engaged in smart-power device physics and design. Currently he is Senior Researcher of the Central Research Laboratory.

A static induction (SI) thyristor using a normally-off planar-gate structure in a low power class has been developed to be used as a power switching device in a three-phase inverter circuit. A 600 V-15 A class SI thyristor with very fast switching time (tgt, tgq) and low forward voltage drop (V(TM)) was designed and created. This design was performed with a reasonable wafer structure (n(-)/n/p(+)), an n(-) base carrier concentration and thickness, and a gate structure (gate diffusion length and gate-gate pitch). Microscopic processing was used to obtain this SI thyristor. The performance trade-off between turn-off time and forward voltage drop is controlled by a lifetime control process using proton irradiation that results in a very fast switching time with tgt of 500 ns and tgq of 500 ns with V(TM) of 1.5 V (at I-T = 18 A). At a current level of I-T = 18 A, the current density in the active area becomes 200 A/cm(2), which indicates that the performance of the SI thyristor is superior to that of conventional IGBTs and MOSFETs.

关键词： static induction (SI) thyristor, turn-on time turn-off time forward voltage drop trade-off relation proton irradiation

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Emerging sensors for the intelligent processing of materials

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JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY 1996年第9期48卷 15-15页

作者： Malas, JC Venugopal, S Materials Process Design Materials Directorate Wright Laboratory Wright Patterson Air Force Base USA Materials Development Division of India Indira Gandhi Centre for Atomic Research India

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Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第11期79卷 19-27页

作者： Shimizu, S Tanizawa, M Kusunoki, S Inuishi, M Miyoshi, H ULSI Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami Hyogo Japan 664 Received the B.S. and M.S. degrees in electronic engineering from Kobe University Hyogo Japan in 1988 and 1990 respectively. In 1990 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation where he has been engaged in research on the structural design of submicron CMOS such as MOSFETs silicidation and reliability including investigations of the hot carrier effect in the ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received the B.S. and M.S. degrees in electronic engineering from Kyoto University Kyoto Japan in 1983 and 1985 respectively. From 1985 to 1988 he was with Sharp Corporation Nara Japan. In 1988 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation Hyogo Japan where he has been engaged in semiconductor device modeling for circuit simulation in ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received the B.S. degree in Physics and the M.S. degree in Information Systems Science from Kyushu University in 1978 and 1982 respectively. He joined the LSI Research and Developmept Laboratory Mitsubishi Electric Corporation Hyogo Japan in 1982. From 1982 to 1988 he was engaged in research on SOI device technology and three-dimensional ICs and from 1988 to 1995 he was engaged in research on the structural design of scaled MOS transistors. He is presently engaged in the research on the structural design of power devices in the ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received a B.S. in materials science and engineering from Osaka University Japan in 1976 and a Ph.D. from Northwestern University Evanston Illinois in 1981. In 1981 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation Hyogo Japan. Since then he has been engaged in research on process and device technologies for 64K and 1M DRAMs and on submicron CMOS isolation ret

High performance under low supply voltage is required for ULSIs in combination with the higher packing density that results from scaling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of MOSFETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of MOSFET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.

关键词： hot carrier degradation AC stress AC lifetime duty factor circuit simulation

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Calculation of the temperature distribution in an asynchronous machine

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European Transactions on Electrical Power 1995年第3期5卷 181-186页

作者： Xypteras, J. Maras, K. Spyrelis, D. Associate Professor Dr.-Ing. Jannis Xypteras (1937) Director of the Electrical Machines Laboratory Dept. of Electrical Engineering Aristotle University of Thessaloniki (AUT)/Greece graduated from the Fakultatfur Elektrotechnik of the RWTH AachedGermany. During the years 1965 to 1980 he had been employed in German and Greek factories for electrical machines several years as chief of development departments. In 1978 he obtained his Dr. Electr. Eng. degree in the AUT. His subject was in the area of eddy currents. Since 1984 he is Ass. hofessor in the same University. His special interests: Design and development of electrical machines vibration and noise problems electromagnetic fields eddy currents. (Dept. of Electrical Engineering Aristotle University GR-54006 Thessaloniki/Greece T +30 3 1 I99 62 93 Fax +303 11 99 63 02) Kostas Maras (1966) received his degree in Electrical Engineering from the Electrotechnical Faculty of Aristotle University of Thessaloniki/Greece in 1989. In 1990 he graduated as M.Sc. in Digital Electronics in the King's College London at the University of LondordGB with the project “Design of a Transversal Filter on VLSI CMOS”. Since then he has been working at M. Papasavas S.A. at KallithedGreece as an analyst in developing industrial software. Projects: Design and implementation of a dynamic relational model used to tackle production problems in industry. From 1991 to 93 he was responsible for the development of production planning used in industries. (M. Papasavas S.A. Sofocleus 261 GR-17874 KallithedGreece T +30 119423246 Fax +30 1/9429561) Dimitrios S. Spyrelis (1965) received his Diploma in Electrical Engineering from the University of Thessalonikil Greece in 1989. In 1990 he joined the Coding Center of Greek Army as research Assistant. He is currently working as technical director in a pigpoultry breeding company which includes feed processing industry slaughter houses by product process industry wastes treatment systems from farm livestock. His last fields of interest

In this paper the temperature distribution on the section vertical to the axis of an asynchronous machine is calculated. For the calculation the numerical method of “Control Volumes” has been used. The technique used can be easily modified to fit any kind of machine. It can also analyse transients. Copyright © 1995 John Wiley & Sons, Ltd.

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