The electrical overstress (EOS) susceptibility of ESD I/O protection structures needs to be investigated to assure overall EOS/ESD reliability in advanced processes. In this paper, the EOS resistance of 0.6 mu m nMOS ...
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The electrical overstress (EOS) susceptibility of ESD I/O protection structures needs to be investigated to assure overall EOS/ESD reliability in advanced processes. In this paper, the EOS resistance of 0.6 mu m nMOS ESD protection structures is analyzed in terms of experimental data, failure analysis results and, device-level electrothermal simulations. Thermally induced EOS failures are explained in terms of physical phenomena leading to thermal runaway. Device width and contact-to-gate spacing are shown to directly affect the EOS robustness of the protection devices.
Slurry‐phase bioremediation is an engineered process for treating contaminated soils or sludges. Slurry‐phase biological treatment can be applied to a variety of contaminated wastes amenable to microbial degradation...
作者:
BULL, DNDaniel N. Bull
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This paper describes TRANSIM simulation a a method for solving problems. There is a brief discussion of modeling and its importance. TRANSIM is compared with other general purpose simulators, special purpose simulatio...
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