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检索条件"机构=Process Module Development and Advance Research"
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process integration of Cu metallization and ultra low k (k=2.2)
Process integration of Cu metallization and ultra low k (k=2...
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IEEE International Conference on Interconnect Technology
作者: Chuan-cheng Cheng Wei-jen Hsia J. Pallinti S. Neumann J. Koh P. Li Mei Zhu M. Lu Hao Cui T. Fujimoto W. Catabay P. Wright Process Technology Department. Process R&D LSI Logic Corporation Santa Clara CA USA Process Module Development and Advance Research LSI Logic Corporation Gresham OR USA
The first process integration of Cu metallization and next generation CVD ultra low k (Trikon Orion ULK, k=2.2) is presented. The current process condition for a 130 nm node Cu/lowk (k=2.9) process is applied to Cu/UL... 详细信息
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