An overview of the process performance of Stress Free Polishing technology (SFP) for copper removal at sub 90 nm nodes is presented in this paper. A brief description of the SFP process and polishing characteristics i...
详细信息
A systematic approach to generate design rules and layout guidelines for damascene metal layers that enhance the robustness and manufacturability of designs is presented. The intra-die sheet resistance variation due t...
详细信息
A systematic approach to generate design rules and layout guidelines for damascene metal layers that enhance the robustness and manufacturability of designs is presented. The intra-die sheet resistance variation due to line width and pattern density effects is characterized for single and multi-level interconnects and the feature interaction distance is determined to be about 30 /spl mu/m. It is shown that the best way to minimize the sheet resistance spread is by implementing rules for the minimum and maximum space between any two features as a function of their widths.
We present constant voltage (CV) time-dependent dielectric breakdown (TDDB) measurements of integrated metal-insulator-metal (MIM) capacitors with plasma-enhanced chemical vapor deposited Si/sub 3/N/sub 4/ nitride (PE...
详细信息
We present constant voltage (CV) time-dependent dielectric breakdown (TDDB) measurements of integrated metal-insulator-metal (MIM) capacitors with plasma-enhanced chemical vapor deposited Si/sub 3/N/sub 4/ nitride (PEN) dielectric. We demonstrate tight breakdown distributions for the capacitors in a full-flow Al-based integration scheme. We achieved these excellent results by design rules to reduce plasma damage, careful process control, and an appropriate treatment of process variability. These results are superior to previously published reports that showed much wider fail time distributions for similar dielectrics and integration schemes. We also demonstrate promising performance for PEN MIM capacitors in a short-flow Cu-based integration scheme. Finally, we discuss application of several possible models ("E," "/spl radic/E," and "I/E") to the data for predicting the PEN lifetime at operating conditions.
暂无评论