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A Physical-Based Artificial Neural Networks Compact Modeling Framework for Emerging FETs

IEEE Transactions on Electron Devices 2024年第1期71卷 223-230页

作者： Yang, Ya-Shu Li, Yiming Kola, Sekhar Reddy Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory The Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan

We report a compact modeling framework based on the Grove-Frohman (GF) model and artificial neural networks (ANNs) for emerging gate-all-around (GAA) MOSFETs. The framework consists of two ANNs;the first ANN constructed with the drain current model not only can capture the main trend of device I - V characteristics but also can predict its variation even when the amount of training data for the ANN is insufficient or outside the range of applied biases. The second one is then designed to improve the model accuracy by further minimizing the errors between the target and the model outputs. We implement the proposed framework to accurately model emerging GAA nanosheet (NS) MOSFETs and complementary FETs (CFETs) without suffering from divergent issues in circuit simulation. In addition, nonphysical behaviors, such as nonzero current at zero bias, do not occur in the modeling framework. Compared to recently reported machine-learning (ML) models, our approach can achieve a similar level of model accuracy with merely 20% amount of the training data. © 1963-2012 IEEE.

关键词： Neural networks

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Compact Model Build Upon Dynamic Weighting Artificial Neural Network Approach for Complementary Field Effect Transistors

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IEEE Transactions on Electron Devices 2024年第1期71卷 246-253页

作者： Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation The Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program The Institute of Communications Engineering the Institute of Biomedical Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

In this work, a dynamic weighting-artificial neural network (DW-ANN) methodology is presented for quick and automated compact model (CM) generation. It takes advantage of both TCAD simulations for high accuracy and SPICE simulations for cost-effectiveness. This methodology is developed for gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field effect transistor (CFET), a potential candidate for future CMOS technology due to its innate properties. The critical process variation (PV) sources that severely degrade the CFET performance are estimated using DW-ANN. It reduces the computation cost and predicts the effects of PV sources with less than 1% error. Furthermore, a compact DW-ANN-based Verilog-A model has been developed that captures the dc as well as transient behavior accurately for circuit-level analysis. CFET-based circuits such as inverter, 6T-static random access memory (SRAM), and ring oscillator (RO) are characterized and implemented using DW-ANN-based CM. The overall average error of the model is reported as less than 2%. Therefore, the proposed device and circuit modeling approach provides a feasible solution for the rapid compact modeling of new emerging devices with good convergence and high accuracy. © 1963-2012 IEEE.

关键词： Neural networks

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Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

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IEEE Transactions on Nanotechnology 2024年 23卷 386-392页

作者： Kola, Sekhar Reddy Li, Yiming Butola, Rajat National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Department of Electronics and Electrical Engineering Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation Hsinchu300093 Taiwan

In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly;in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R2-score prove that the ANN model properly grasps information from the dataset successfully;thus, it can be used to model emerging CFETs for circuit simulation. © 2002-2012 IEEE.

关键词： Neural networks

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A Coupled Two-Tier Mathematical Transmission Model to Explore Virulence Evolution in Vector-Borne Diseases

arXiv

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arXiv 2024年

作者： Villela, Daniel A.M. Program of Scientific Computing Oswaldo Cruz Foundation Rio de Janeiro Brazil

The emergence or adaptation of pathogens may lead to epidemics, highlighting the need for a thorough understanding of pathogen evolution. The tradeoff hypothesis suggests that virulence evolves to reach an optimal transmission intensity relative to the mortality caused by the disease. This study introduces a mathematical model that incorporates key factors such as recovery times and mortality rates, focusing on the diminishing effects of parasite growth on transmission, with a focus on vector-borne diseases. The analysis reveals conditions under which heightened virulence occurs in hosts, indicating that these factors can support vector-host transmission of a pathogen, even if the host-only component is insufficient for sustainable transmission. This insight helps explain the significant presence of pathogens with high fatality rates, such as those in vector-borne diseases. The findings underscore an elevated risk for future outbreaks involving such diseases. Enhanced surveillance of mortality rates and techniques to monitor pathogen evolution are vital to effectively control future epidemics. This study provides essential insights for epidemic preparedness and highlights the need for ongoing research into pathogen evolution. © 2024, CC BY-NC-ND.

关键词： Plant diseases

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Predicting high dengue incidence in municipalities of Brazil using path signatures

arXiv

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arXiv 2024年

作者： Villela, Daniel A.M. Program of Scientific Computing Oswaldo Cruz Foundation Rio de Janeiro Brazil

Predicting whether to expect a high incidence of infectious diseases is critical for health surveillance. In the epidemiology of dengue, environmental conditions can significantly impact the transmission of the virus. Utilizing epidemiological indicators alongside environmental variables can enhance predictions of dengue incidence risk. This study analyzed a dataset of weekly case numbers, temperature, and humidity across Brazilian municipalities to forecast the risk of high dengue incidence using data from 2014 to 2023. The framework involved constructing path signatures and applying lasso regression for binary outcomes. Sensitivity reached 75%, while specificity was extremely high, ranging from 75% to 100%. The best performance was observed with information gathered after 35 weeks of observations using data augmentation via embedding techniques. The use of path signatures effectively captures the stream of information given by epidemiological and climate variables that influence dengue transmission. This framework could be instrumental in optimizing resources to predict high dengue risk in municipalities in Brazil and other countries after learning these country patterns. © 2024, CC BY-NC-ND.

关键词： Prediction models

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Comprehensive Averaged Model of DCM-Operated Boost Converter Fed by PV Source 4

Comprehensive Averaged Model of DCM-Operated Boost Converter...

引用

4th International Conference on Smart Grid and Renewable Energy, SGRE 2024

作者： Fairouz, Fatima A Elgendy, Mohammed A Muhammed, Musbahu Newcastle University School of Engineering Newcastle Upon Tyne United Kingdom Renewable Energy Program Kuwait Institute for Scientific Research Industrial Shuwaikh Kuwait Teesside University School of Computing Engineering & Digital Technologies Middlesbrough United Kingdom

ISBN: (纸本)9798350306262

The average model of DC-DC converters is commonly used to analyze the control stability and dynamics of switched-mode converters. Although the average model of the boost converter (BC) in the continuous conduction mode (CCM) and the discontinuous conduction modes (DCM) is well-covered in the literature, the modelling and control of the DCM-operated BC with the maximum power point tracking (MPPT) has not been paid much attention. In this paper, a comprehensive state-space averaged model of DCM-operated BC fed by photovoltaic (PV) source is derived. Higher-order, lower-order, reduced-order, and full-order models are considered. MATLAB simulation is used to verify the derived models. The converter dynamics were analyzed based on the bode-plot and the step-response for each model. Results show that the lower-full-order model is considered the most suitable choice for modelling the DCM-operated boost converter. © 2024 IEEE.

关键词： Boost converter

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Early Detection of Retinitis Pigmentosa 11

Early Detection of Retinitis Pigmentosa

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11th IEEE International Conference on Intelligent computing and Information Systems, ICICIS 2023

作者： El Gazoly, Adham Mohammed Mahmoud, Karma Yasser Ismail El-Tohamy, Ahmed Hassan, Ali Ahmed Mohammed, Omar Mohammed Hamed Al-Berry, Maryam Nabil Mohammed, Hasnaa Sayed Abdo Al Amir, Yousra Samir Ain Shams University Faculty of Computer and Information Sciences Bioinformatics Program Information Systems Department Cairo Egypt Ain Shams University Faculty of Computer and Information Sciences Scientific Computing Department Cairo Egypt

ISBN: (纸本)9798350322101

Retinitis pigmentosa (RP) is a debilitating inherited retinal disorder that affects a significant number of individuals worldwide. Existing diagnostic methods have limitations in detecting early-stage RP and they highlight the need for using additional imaging modalities. In this paper, a groundbreaking approach for RP diagnosis is proposed using three imaging modalities and a CNN-based classification model achieving 97.7% accuracy. The proposed model demonstrates superior performance compared to previous work as it achieves higher accuracy. A segmentation model was also proposed to segment pigment spots and provide doctors with effective monitoring of the disease. The proposed segmentation model outperforms previously used methods by achieving 99.61% accuracy and higher values in most of the performance metrics, including specificity, precision, and Area Under Curve (AUC). The Segmentation and classification models were integrated into a web application providing a user-friendly and intuitive tool for RP diagnosis and paving the way for more accessible and effective diagnostic tools. This innovative approach democratizes healthcare by making RP diagnosis affordable and accessible to more people and improving the speed of clinical decision-making. © 2023 IEEE.

关键词： Semantics

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Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Communication, Messages, Dialogues 28

Communication, Messages, Dialogues

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28th World Multi-Conference on Systemics, Cybernetics and Informatics, WMSCI 2024

作者： Vieira Kritz, Maurício Faculty of Biology Medicine and Health University of Manchester ManchesterM13 9PT United Kingdom National Laboratory for Scientific Computing and Knowledge Diffusion Multi-institutional Multi-disciplinary Graduate Program RJ Petrópolis25651-75 Brazil

ISBN: (纸本)9781950492794

Communication is a cornerstone any social enterprise where knowledge is created and collectively cultivated, like it happens in science and culture. It is also the backbone of social systems or organisations that curate, maintain, and propagate knowledge. However, communication is presently an overloaded concept. This word refers to communication between human beings, as well as, to mass communication, communication with and between machines, among animals and plants. The present text describes yet another effort to better understand what communication is, whether it is an artificial product or a natural phenomenon, and what is its role in learning and knowledge construction, including non-human situations. Grounded on previous work that highlighted the importance of considering Shannon-Weaver channels as an artefact supporting interactions, I particularly examine the role of messages exchanged through a SW channel during communications. I also emphasise the relevance of fathoming the role of the message-set as well as how it is affected by learning, cross-disciplinary communication, and non-spontaneous multi-disciplinary collaborations. © 2024 by the International Institute of Informatics and Systemics. All rights reserved.

关键词： Collaboration Collective knowledge creation Communication Dialogues Explanations Messages

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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