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arXiv 2023年

作者： Herrala, Olli Gabriel, Steven A. Oliveira, Fabricio Ekholm, Tommi Aalto University Department of Mathematics and Systems Analysis Espoo Finland University of Maryland Department of Mechanical Engineering/Applied Mathematics Statistics & Scientific Computing Program College ParkMD United States Norwegian University of Science and Technology Department of Industrial Economics and Technology Management Trondheim Norway Finnish Meteorological Institute Helsinki Finland

We explore the class of trilevel equilibrium problems with a focus on energy-environmental applications and present a novel single-level reformulation for such problems, based on strong duality. To the best of our knowledge, only one alternative single-level reformulation for trilevel problems exists. This reformulation uses a representation of the bottom-level solution set, whereas we propose a reformulation based on strong duality. Our novel reformulation is compared to this existing formulation, discussing both model sizes and computational performance. In particular, we apply this trilevel framework to a power market model, exploring the possibilities of an international policymaker in reducing emissions of the system. Using the proposed methods, we are able to obtain globally optimal solutions for a five-node case study representing the Nordic countries and assess the impact of a carbon tax on the electricity production portfolio. Copyright © 2023, The Authors. All rights reserved.

关键词： Energy resources

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A physics informed neural network approach to simulating ice dynamics governed by the shallow ice approximation

arXiv

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arXiv 2025年

作者： Chawla, Kapil Holmes, William Department of Mathematics Institute for Scientific Computing and Applied Mathematics Indiana University IN47405 United States Department of Mathematics Cognitive Science Program Indiana University IN47405 United States

In this article we develop a Physics Informed Neural Network (PINN) approach to simulate ice sheet dynamics governed by the Shallow Ice Approximation. This problem takes the form of a time-dependent parabolic obstacle problem [17]. Prior work has used this approach to address the stationary obstacle problem and here we extend it to the time dependent problem [4]. Through comprehensive 1D and 2D simulations, we validate the model’s effectiveness in capturing complex free-boundary conditions. By merging traditional mathematical modeling with cutting-edge deep learning methods, this approach provides a scalable and robust solution for predicting temporal variations in ice thickness. To illustrate this approach in a real world setting, we simulate the dynamics of the Devon Ice Cap, incorporating aerogeophysical data from 2000 [6] and 2018 [22]. © 2025, CC BY.

关键词： Approximation theory

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Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps

Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices ...

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IEEE Conference on Nanotechnology

作者： Sekhar Reddy Kola Min-Hui Chuang Yiming Li Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering Institute of Communications Engineering Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Hsinchu Taiwan

Three-dimensional (3D) bulk fin-typed field effect transistors (FinFETs) have emerged as key devices that can scale down the technology node beyond 22-nm. However, the scaled devices have created new sources of fluctuation inherent in 3D geometry. The interface trap is one such fluctuation that is caused by the trapping and de-trapping of charge carriers and has an adverse effect on device characteristics and variability. In this work, we study impacts of random interface traps (RITs) on electrical characteristic of bulk FinFETs by using a 3D quantum-mechanically corrected device simulation. RIT position effects on short channel effects (SCEs) are examined with physical governed influence to show the major fluctuations. More than 50% reductions of the RITs-induced characteristic fluctuation of the germanium (Ge) devices are observed, compared with Si devices. The Ge ones can reduce SCE variations and exhibit high immunity to RITs.

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Effect of electron- and hole-doping on properties of kagomé-lattice ferromagnet Fe3Sn2

arXiv

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arXiv 2023年

作者： Adams, Milo Huang, Chen Shatruk, Michael Department of Chemistry and Biochemistry Florida State University TallahasseeFL32306-4390 United States Department of Scientific Computing Florida State University TallahasseeFL32306-4120 United States Materials Science and Engineering Program Florida State University TallahasseeFL32310 United States National High Magnetic Field Laboratory TallahasseeFL32310 United States

We report a theoretical investigation of effects of Mn and Co substitution in the transition metal sites of the kagomé-lattice ferromagnet, Fe3Sn2. Herein, hole- and electron-doping effects of Fe3Sn2 have been studied by density-functional theory calculations on the parent phase and on the substituted structural models of Fe3–xMxSn2 (M = Mn, Co;x = 0.5, 1.0). All optimized structures favor the ferromagnetic ground state. Analysis of the electronic density of states (DOS) and band structure plots reveals that the hole (electron) doping leads to a progressive decrease (increase) in the magnetic moment per Fe atom and per unit cell overall. The high DOS is retained nearby the Fermi level in the case of both Mn and Co substitutions. The electron doping with Co results in the loss of nodal band degeneracies, while in the case of hole doping with Mn emergent nodal band degeneracies and flatbands initially are suppressed in Fe2.5Mn0.5Sn2 but re-emerge in Fe2MnSn2. These results provide key insights into potential modifications of intriguing coupling between electronic and spin degrees of freedom observed in Fe3Sn2. Copyright © 2023, The Authors. All rights reserved.

关键词： Ferromagnetism

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Moving Mesh Simulations of Pitting Corrosion

arXiv

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arXiv 2023年

作者： Sarker, Abu Naser Haynes, Ronald D. Robertson, Michael Scientific Computing Program Memorial University St. John’sNLA1C 5S7 Canada Department of Mathematics and Statistics Memorial University NLA1C 5S7 Canada Department of Physics Acadia University WolfvilleNSB4P 2R6 Canada

Damages due to pitting corrosion of metals cost industry billions of dollars per year and can put human lives at risk. The design and implementation of an adaptive moving mesh method is provided for a moving boundary problem related to pitting corrosion. The adaptive mesh is generated automatically by solving a mesh PDE coupled to the nonlinear potential problem. The moving mesh approach is shown to enable initial mesh generation, provide mesh recovery and is able to smoothly tackle changing pit geometry. Materials with varying crystallography are considered. Changing mesh topology due to the merging of pits is also handled. The evolution of the pit shape, the pit depth and the pit width are computed and compared to existing results in the literature. Copyright © 2023, The Authors. All rights reserved.

关键词： Finite element method

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Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes

Statistical 3D Device Simulation of Full Fluctuations of Gat...

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2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

作者： Kola, Sekhar Reddy Li, Yiming Chen, Chieh-Yang Chuang, Min-Hui National Yang-Ming Chiao Tung University Electrical Engineering and Computer Science International Graduate Program Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Communications Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Department of Electrical Engineering and Computer Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Parallel and Scientific Computing Laboratory Hsinchu300 Taiwan

ISBN: (纸本)9781665409230

We for the first time study characteristic fluctuation of gate-all-around silicon nanosheet MOSFETs induced by random dopants fluctuation (RDF), interface trap fluctuation (ITF), and work function fluctuation (WKF), and their combinations. The explored devices affected by the WKF and its combination result in sizeable variability. Because of enigmatical interactions among the aforementioned random factors, overestimated variabilities occur if we only consider one random source each time, compared with the statistical 3D device simulation for full RDF, ITF and WKF at the same time. Notably, 10.78% and 103% overestimations are found for the threshold voltage and off-state current fluctuations. © 2022 IEEE.

关键词： Nanosheets

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Design and exploration of vertically stacked complementary tunneling field-effect transistors

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Applied Physics Express 2024年第1期17卷 014001-014001页

作者： Thoti, Narasimhulu Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

The purpose of this letter is to study the design and explore vertically stacked complementary tunneling field-effect transistors (CTFETs) using CFET technology for emerging technology nodes. As a prior work, the CTFET’s device-level simulations are implemented and deliberated in strict compliance with the experimental settings. This work comprises the study of physical and DC analyses by scaling the p- to n-CTFET separation (D pn), being a significant factor in CFET/CTFET design for its process difficulty. By utilizing the 50% benefit in footprint, the work is further extended to CTFET static random access memory implementation and characterization with hold/read noise margin analysis. © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

关键词： Si-Ge alloys

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Scaling laws and spatial effects of Brazilian health regions: a research protocol

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Procedia Computer Science 2023年 219卷 1325-1332页

作者： Giovane Thomazini Soares Diego Bettiol Yamada Filipe Andrade Bernardi Mariane Barros Neiva Luis Pedro Lombardi Junior André Luiz Teixeira Vinci Ana Clara de Andrade Mioto Domingos Alves Ribeirão Preto Medical School University of Sao Paulo Av Bandeirantes 3900 14049900 Ribeirao Preto SP Brazil Bioengineering Postgraduate Program Av Trabalhador Sao-Carlense 400 13566590 Sao Carlos SP Brazil Institute of Mathematics and Computer Sciences Av Trabalhador Sao-Carlense 400 13566590 Sao Carlos SP Brazil Institute of Mathematics Statistics and Scientific Computing State University of Campinas Rua Sérgio Buarque de Holanda 651 13083859 Campinas SP Brazil

The literature has already consolidated the importance of health regions for Brazilian public health. Complexity properties strongly mark such regions. In this context, there are abundant indications that health regions should be analyzed with approaches linked to the sciences of complexity. One of these approaches, the estimation of scaling laws, can describe important properties of socio-spatial elements. However, no studies estimate the scaling laws of Brazilian health regions. This research protocol can remedy this limitation, proposing the estimation of scaling laws of the previously mentioned regions, mainly considering variables relevant to Brazilian public health. Still, this paper can substantially mitigate other relevant limitations of usual research that estimate scaling laws of socio-spatial elements. These mitigations, which provide advances in the literature on estimating scaling laws, are given by the proposal of modeling (if necessary) spatial effects and estimating scaling laws for the entire population of the socio-spatial elements. According to the theory, the expected results are non-linear scaling laws, which will likely vary with space and time and coexist with relevant spatial effects. From such laws and effects, it will be possible to accurately characterize the performance of each health region through Spatial and Scale Adjusted Metropolitan Indicators and unravel spatio-temporal properties, stabilities, and instabilities of sets composed of health regions. The expected findings of this paper can help rearrange health regions and improve the quality of information used in Brazilian public health planning.

关键词： Scaling laws Spatial effects Research protocol

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Modeling texts with networks: comparing five approaches to sentence representation

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The European Physical Journal B 2024年第6期97卷 1-12页

作者： Oliveira, Davi Alves Pereira, Hernane Borges de Barros Department of Human Sciences Campus IV University of Bahia State (UNEB) Jacobina Brazil Programa de Pós-Graduação em Difusão do Conhecimento (PPGDC) Federal University of Bahia (UFBA) University of Bahia State (UNEB) Bahia Federal Institute of Education Science and Technology (IFBA) State University of Feira de Santana (UEFS) National Scientific Computing Laboratory (LNCC) SENAI CIMATEC University Center Salvador Brazil Department of Education Campus I University of Bahia State (UNEB) Salvador Brazil Computational Modeling Program SENAI CIMATEC University Center Salvador Brazil

Complex networks offer a powerful framework for modeling linguistic phenomena. This study compares five distinct methods for representing sentences as networks, each with unique edge definitions: (1) a lines approach, where edges represent token (e.g., word) adjacency; (2) a close-range co-occurrence approach, where edges are based on the probability of tokens co-occurring at distance one or two; (3) a cliques approach, where edges connect tokens co-occurring within the same sentence; (4) a dependency-based approach, where edges are defined by syntactic dependencies extracted by a parser; (5) an IF-trimmed-subgraphs approach, where edges are determined by the Incidence-Fidelity (IF) Index. While the first four approaches are well established in the literature, the last one is a novel proposal. We also examined the effects of limiting the vertices to lemmas (i.e., words with inflections removed) and to lexical lemmas (i.e., nouns, adjectives, verbs, and adverbs) as opposed to the unaltered words. Our results reveal that these approaches yield networks with varying average minimal path lengths and degrees, influencing the interpretation of results. While small-world behavior remains consistent across networks, scale-free behavior analysis is affected. Notably, excluding functional words significantly alters degree distributions. We suggest, in order of relevance and according to the resources available, the dependency-based, the close-range co-occurrence, and the lines approaches for cases in which syntactic relations are central, and the IF-trimmed-subgraphs and the cliques approaches for cases in which semantic relations are central. Representation of the sentence “we calculated two sets of adjusted values as follows” using five approaches - (1) the lines approach, (2) the close-range cooccurrence approach, (3) the cliques approach, (4) the dependency-based approach, and (5) the IF-trimmed-subgraphs approach - and three vertex definitions - (1) vertices representing

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Effects of Spacer and Single-Charge Trap on Voltage Transfer Characteristics of Gate-All-Around Silicon Nanowire CMOS Devices and Circuits

Effects of Spacer and Single-Charge Trap on Voltage Transfer...

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IEEE Conference on Nanotechnology

作者： Sekhar Reddy Kola Yiming Li Narasimhulu Thoti Parallel and Scientific Computing Laboratory EECS International Graduate Program from National Chiao Tung University Hsinchu 300 Taiwan Parallel and Scientific Computing Laboratory Institute of Communications Engineering National Chiao Tung University Hsinchu 300 Taiwan Parallel and Scientific Computing Laboratory EECS International Graduate Program National Chiao Tung University Hsinchu 300 Taiwan

ISBN: (数字)9781728182643

ISBN: (纸本)9781728182650

We report the effects of the spacer and the single-charge trap (SCT) on the voltage transfer characteristics of cylindrical-shape gate-all-around (GAA) silicon (Si) nanowire (NW) metal-oxide-semiconductor field effect transistor (MOSFETs). We explore the impact of low-x spacer, high-x spacer, and dual spacer (DS) on electrical characteristics of the GAA Si NW MOSFET with a gate length of 10 nm. Compared with the nominal device (i.e., the device without spacer), the device with DS possesses 68.8% reduction on the normalized off-current and 29.4% increase on the normalized on-current for n- and p-type devices. Similarly, 21.1% and 3.38% improvements on the normalized high and low noise margins can be achieved for the GAA Si NW complementary metal-oxide-semiconductor (CMOS) circuit. Notably, the voltage transfer characteristics induced by the acceptor- and donor-type SCT for the CMOS circuit with DS possesses 2.64% and 3.82% enhancements for the normalized high and low noise margins compared with the nominal one.

关键词： Silicon Gallium arsenide Logic gates MOSFET Semiconductor device modeling Hafnium compounds Numerical models

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