We measured the three-dimensional intensity profile of the Airy-Bessel linear light bullet clearly resolving its complicated three-dimensional structures. The measurement also retrieved its step-function-like temporal...
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The photoelectrochemical responses of two archetypal metal–organic frameworks (MOFs), MOF-5 and MOF-177, have been assessed. Films of MOF-5 and MOF-177 were grown on carboxylic-acid-terminated conductive fluorine-dop...
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The photoelectrochemical responses of two archetypal metal–organic frameworks (MOFs), MOF-5 and MOF-177, have been assessed. Films of MOF-5 and MOF-177 were grown on carboxylic-acid-terminated conductive fluorine-doped tin oxide substrates. Separate analyses by powder X-ray diffraction, Raman spectroscopy, and fluorescence spectroscopy collectively indicated these films prepared via a solvothermal method in diethylformamide were free of residual impurities such as ZnO clusters and residual organics. Exposure of these films to white light illumination while immersed in acetonitrile electrolytes elicited measurable photocurrents. Wavelength-dependent analysis of the photoresponses showed that the measured photocurrents were induced by ultraviolet light and that the spectral response profiles followed closely the light absorption profiles of each respective material. Attenuation of the induced photocurrents was noted after prolonged ultraviolet light illumination and/or exposure of the films to H2O(l), indicating that the observed photoresponse properties are directly related to the structural integrity of these MOFs. The cumulative data illustrate that such MOFs have innately light-sensitive properties that are atypical in high surface area materials.
In this paper we show that a flash lamp can be employed to induce controlled lateral solidification of a-Si thin films. Specifically, a dual xenon-arc-lamp-based system was utilized to induce location-controlled compl...
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The paper introduces some challenges of the fast growing mortgage market in Poland, being also the next step of research presented in previous publications, showing the complete process of building and verifying three...
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This paper reports on new experimental findings and conclusions regarding the pulsed-laser-induced melting-and-solidification behavior of PECVD a-Si films. The experimental findings reveal that, within the partial-mel...
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The Mie scattering of a circularly polarized, purely azimuthal Laguerre-Gauss beam carrying orbital angular momentum from a particle small compared with the incident wavelength is treated analytically. Using the vecto...
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The Mie scattering of a circularly polarized, purely azimuthal Laguerre-Gauss beam carrying orbital angular momentum from a particle small compared with the incident wavelength is treated analytically. Using the vector spherical harmonics, we show angular momentum conservation leads to two physical mechanisms that cause vanishingly small scattering intensity when the dipole moment dominates the response of the particle. The application of this angular-momentum-induced transparency is discussed in the case of a plasmonic crystal whose collective modes possess a well-defined angular momentum content.
Silicon microcantilevers were coated by pulsed laser deposition with vanadium dioxide (VO2) (monoclinic M1 phase) and V 1-xCrxO2 with x near 0.024 (monoclinic M 2 phase), and their mechanical characteristics were stud...
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Silicon microcantilevers were coated by pulsed laser deposition with vanadium dioxide (VO2) (monoclinic M1 phase) and V 1-xCrxO2 with x near 0.024 (monoclinic M 2 phase), and their mechanical characteristics were studied as a function of temperature through the films' insulator-to-metal transition (IMT). The undoped VO2 films grew with (011)M1 planes parallel to the substrate, while Cr-doped VO2 films grew oriented with (201)M2 and (2 01)M2 planes parallel to the substrate. In both cases, the films transformed reversibly through the IMT to the tetragonal (rutile, R) phase, with film (110)R planes oriented parallel to the substrate. The fundamental resonant frequencies of the cantilevers were measured as the temperature was cycled from ambient temperature, through the IMT, and up to 100 °C. Very high resonant frequency changes were observed through the transition for both types of samples, with increases during heating of over 11 and over 15 for the cantilevers coated with pure and Cr-doped VO2, respectively. From the resonant frequencies measured at room temperature for the bare and coated cantilevers in each case, the effective Young's moduli of the films were determined. The values obtained, assuming bulk densities for the films, are 156 ± 7.5 GPa for VO2 (M1 phase) and 102 ± 3 GPa for Cr-doped VO2 (M2 phase). Strong curvature changes during the transition to the R phase were also observed for cantilevers coated with both types of films, but these were significantly higher in the case for the Cr-doped film. Curvature changes for temperature ranges outside the IMT region were small and attributed to differential thermal expansion between film and silicon substrate. From measured cantilever tip displacements in this post-transition range-for the undoped VO 2-coated microcantilevers-a rough estimate of 110 GPa was obtained for the effective Young's modulus for R-phase VO2. The substantially higher changes in resonant frequency and curvature for V1-xCr xO2-coated cant
We have investigated the effect of varying the film thickness on the surface orientation texturing in polycrystalline Si films obtained via mixed-phase solidification (MPS) of initially a-Si precursor films on SiO2. I...
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We have investigated the effect of varying the film thickness on the surface orientation texturing in polycrystalline Si films obtained via mixed-phase solidification (MPS) of initially a-Si precursor films on SiO2. It is found that, for a given number of MPS exposure cycles, the degree of (100)-surface texturing is reduced as the film thickness is increased. We discuss how this trend can be accounted for by the previously proposed thermodynamic model of MPS, wherein a decreasing local solid/liquid interface curvature with increasing film thickness is identified as the primary cause for decreasing the influence which anisotropic solid-Si/SiO2 interfacial energies have on the survivability of the grains. This, in turn, leads to other factors becoming more significant in determining the grains that survive the MPS cycle, thereby reducing the degree of (100)-surface texturing in the resulting films.
One approach to super-resolution fluorescence microscopy, termed stochastic localization microscopy, relies on the nanometer scale spatial localization of individual fluorescent emitters that stochastically label spec...
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One approach to super-resolution fluorescence microscopy, termed stochastic localization microscopy, relies on the nanometer scale spatial localization of individual fluorescent emitters that stochastically label specific features of the specimen. The precision of emitter localization is an important determinant of the resulting image resolution but is insufficient to specify how well the derived images capture the structure of the specimen. We address this deficiency by considering the inference of specimen structure based on the estimated emitter locations. By using estimation theory, we develop a measure of spatial resolution that jointly depends on the density of the emitter labels, the precision of emitter localization, and prior information regarding the spatial frequency content of the labeled object. The Nyquist criterion does not set the scaling of this measure with emitter number. Given prior information and a fixed emitter labeling density, our resolution measure asymptotes to a finite value as the precision of emitter localization improves. By considering the present experimental capabilities, this asymptotic behavior implies that further resolution improvements require increases in labeling density above typical current values. Our treatment also yields algorithms to enhance reliable image features. Overall, our formalism facilitates the rigorous statistical interpretation of the data produced by stochastic localization imaging techniques.
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