作者：
Wu, BCYoung, GSSchmidt, WChoppella, KDr. Bi-Chu Wu:received a PhD in Mechanical Engineering from the University of Maryland
College Park in 1991. She has worked on projects involving naval architecture design optimization solid mechanics and database development. Presently a senwr engineer with Angle Incorporated Dr Wu's research interests are in design optimization and fuzzy logic applications. Dr. Gin-Shu Young:
a senior engineer with Angle Incorporated holds a PhD in Mechanical Engineering from the University of Maryland College Park. As a guest researcher with National Institute of Standards and Technologies from 1990 to 1993 he worked on vision-based navigation for autonomous vehicles. His experience also includes applications of optimization fuzzy logic neural network and genetic algorithm methods to engineering system design Mr. William Schmidt:co-founded Angle Incorporated in 1990 and has served as Vice PresidentlChiefScientist during this tame. He holds a B.Sc. in Applied Science from the Naval Acadt?my and an M.Sc. in Physics from the Naval Post Graduate School. He has cner 20 years experience in technical leadership
material and personnel management. He has led the application of computer aided design (CAD) and Product Model Information Exchange to the shipbuilding industry. His experience also includes leading the amlication of model based operational analysis to support the Live Fire Test Program for DDG 51 Class Destroyers. Mr. Krishna M. Choppella:is a Sofware Engineer at Eidea Laboratories
Incotporated where he works on componentbased distributed enterpvise frameworks. He has been involved in creating data analysis tools for the US Nay by integrating CAD modeis databases and graphical front ends. His work in the Masters degree program in Mechanical Engineering at the University of Texas at Austin was in di0ddase.r spectroscopy of combustion products in porous-matri burners. He received his Bachelors degree in Electrical Engineering in India. He was a Research Associate at the Centre for Laser Technology and Project Engi
Ship design is often multidisciplinary involving several design elements with various types of objectives and constraints (O/C) some easily described as mathematical formulas, others better modeled as descriptive asse...
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Ship design is often multidisciplinary involving several design elements with various types of objectives and constraints (O/C) some easily described as mathematical formulas, others better modeled as descriptive assertions. This paper describes a method based on fuzzy functions and an integrated performance index to model O/C using descriptive assertions to be used with mathematical formulas in optimization. Another issue addressed in this paper concerns the coordination of design elements when sequentially coupled, that is, when one leads the other and the performance of the follower depends greatly on the design of the leader. Based on neuro-fuzzy techniques, the method described here coordinates and optimizes sequentially coupled elements. The two methods are applied to machinery arrangement (MA) and pipe routing (PR). Preliminary models for optimization of MA and PR are described considering convenience, producibility: engine room size, interference and location as factors in the O/C set. Some test results from MA/PR applications are presented and discussed. The methods are generic and can be extended to other elements in ship design. They are mutually independent and may be used separately Two advantages of their use are an improvement in overall performance and a reduction in the need for redesign of elements.
The electrical characteristics of a glucose-sensitive polymeric hydrogel have been studied. The hydrogel matrices were prepared by radical polymerization of solutions containing 2-hydroxyethyl methacrylate, N,N-dimeth...
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The use of tungsten halogen lamps and the deuterium lamp as the source of thermal and optical energies has been exploited to deposit thin films of Ta2O5 on Si and conducting substrates, The leakage current densities a...
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The use of tungsten halogen lamps and the deuterium lamp as the source of thermal and optical energies has been exploited to deposit thin films of Ta2O5 on Si and conducting substrates, The leakage current densities are as low as 10(-10) A/cm(2) for gate voltage under 5V. Photons in visible, ultraviolet, and vacuum ultraviolet (lambda < 800 nm) regions provide higher bulk and surface diffusion coefficients as well as reduced activation energy for the chemical process involved in the chemical vapor deposition process. The low thermal mass of the substrate provides limited reaction processing capability. The photochemical and photophysical processes allow the participating atoms and molecules to adjust their bond geometries and occupy sites which result in overall reduction of stress and strain energy and provide materials with overall low microscopic defects at low processing temperature and with high throughput. New experimental results of Al-Ta2O5-Si3N4-poly Si-Al structure are presented. The leakage current-voltage characteristics are better than those reported by other researchers.
The concept of an optical fuzzy flip-flop, as an essential and basic component for the effective processing of fuzzy information, is introduced. A design based on the area-encoding technique and a multiple-imaging sys...
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The concept of an optical fuzzy flip-flop, as an essential and basic component for the effective processing of fuzzy information, is introduced. A design based on the area-encoding technique and a multiple-imaging system is proposed to implement two types of fuzzy J-K flip-flops. (C) John Wiley & Sons, Inc.
Thin films of Al-1.27 wt %Y were deposited by dc magnetron sputtering. Adding yttrium to the aluminum drastically reduced the metal’s grain size and also improve the uniformity of grain size distribution. Upon anneal...
Thin films of Al-1.27 wt %Y were deposited by dc magnetron sputtering. Adding yttrium to the aluminum drastically reduced the metal’s grain size and also improve the uniformity of grain size distribution. Upon annealing at a temperature of 450 °C for 30 min, grain growth was insignificant, while the electrical resistance dropped from 6.05 to 2.95 μΩ cm. The as deposited films consisted of Al4Y and α-Al supersaturated with yttrium. After annealing, β-Al3Y precipitated instead of α-Al3Y. The Al–Y films had much higher resistance to hillock formation than did Al-1 wt %Si films.
A high-resolution time-frequency distribution is applied to the study of violin vibrato. Our analysis indicates that the frequency modulation induced by the motion of the stopped finger on the string is accompanied by...
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The development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit...
The development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit (IC) paradigm. Both the low K dielectric and the processing methodology used for it should satisfy several important criteria before the technique can be accepted in future mainstream low power IC manufacturing. We had reported earlier a chemical vapor deposition (CVD) technique for the deposition of DuPont's Teflon amorphous fluoropolymer 1600 (bulk K=1.93) using the principle of direct liquid injection. The processing was carried out with and without an ultra violet (UV) light source in a computerized rapid isothermal processing (RIP) system. Recently, we have extensively characterized the films and examined the suitability of our technique in light of some of the requirements of the future IC industry. Our results indicate that the processed films exceed several of the established dielectric performance standards outlined in recent roadmaps for sub 0.25 μm ICs. The film properties were improved when the UV source was used during processing. CVD processed films in general demonstrated significant improvements in terms of manufacturability, throughput, cost, and dielectric properties over the same films processed by alternate techniques.
The mortality related to cervical cancer can be substantially reduced through early detection and treatment. However, current detection techniques, such as Pap smear and colposcopy, fail to achieve a concurrently high...
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ISBN:
(纸本)0262100657
The mortality related to cervical cancer can be substantially reduced through early detection and treatment. However, current detection techniques, such as Pap smear and colposcopy, fail to achieve a concurrently high sensitivity and specificity. In vivo fluorescence spectroscopy is a technique which quickly, noninvasively and quantitatively probes the biochemical and morphological changes that occur in pre-cancerous tissue. RBF ensemble algorithms based on such spectra provide automated, and near real-time implementation of pre-cancer detection in the hands of non-experts. The results are more reliable, direct and accurate than those achieved by either human experts or multivariate statistical algorithms.
PVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si...
PVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. electrical results versus thermal history for films of ∼6-18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000r.C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400µΩ-cmµ) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700r.C.
Photoluminescence spectra of high quality GaN epilayers, grown by MOCVD on sapphire substrates and implanted by isoelectronic ions: As, P, and Bi, were investigated. Post implant annealing was done at temperatures of ...
Photoluminescence spectra of high quality GaN epilayers, grown by MOCVD on sapphire substrates and implanted by isoelectronic ions: As, P, and Bi, were investigated. Post implant annealing was done at temperatures of up to 1150 °C, in a tube furnace under flowing NH3 or N2, and in a rapid thermal annealing system in ambient of N2. The PL of GaN: P annealed at 1150 °C in NH 3 exhibited strong pair-type modulated structures on the short wavelength shoulder of an emission *** band at 2.914 eV is due to the recombination of bound exciton to P-hole isoelectronic traps (P-BE), and the modulated structure results from electron-hole recombination at pairs of neutral donors and a hole on P isoelectronic traps. The PL of GaN: As, GaN: Bi showed an emission with peaks at 2.597 eV and 3.241 eV, due to the recombination of an exciton bond to As and Bi isoelectronic-hole traps. We also studied thermal quenching excitation spectra, and PL kinetics. The experimental results are discussed using a simple spherical potential-well model for isoelectronic traps: As, P, and Bi replacing nitrogen in GaN.
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