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Effect of light intensity on Schottky barrier widths and I-V characteristics of polymer heterojunction photodiodes

2011 MRS Spring Meeting

作者： Guvenc, Ali Bilge Ozkan, Cengiz Ozkan, Mihrimah Department of Electrical Engineering University of California Riverside Riverside CA 92521 United States Department of Mechanical Engineering University of California Riverside Riverside CA 92521 United States Material Science and Engineering Program University of California Riverside Riverside CA 92521 United States

ISBN: (纸本)9781605113364

The Schottky barriers that forms on the interface between aluminum and organic semiconductor of polymer heterojunction photodiodes based on poly(3-hexylthiophene): [6,6]-phenyl-C16-butyric acid methylester blend, has been investigated according to Mott-Schottky curves. We focused on the effect of light intensity on the Schottky barrier widths and I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different light intensities indicate a dependency of Schottky barrier to the light intensity. © 2011 materials Research Society.

关键词： Butyric acid

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Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires

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MRS Online Proceedings Library 2011年第1期1350卷 1-6页

作者： Ali Bilge Guvenc Miroslav Penchev Jiebin Zhong Cengiz Ozkan Mihrimah Ozkan Department of Electrical Engineering University of California-Riverside Riverside USA Department of Mechanical Engineering University of California-Riverside Riverside USA Material Science and Engineering Program University of California-Riverside Riverside USA

We investigated the data transmission performance of indium antimonide (InSb) nanowires (NWs) synthesized on InSb (100) substrate using chemical vapor deposition (CVD) having diameters of 20 nm and below. The results indicate that the data transmission performance of NWs suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. The 20 nm NWs can sustain data rates up to 5 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system with a bit error rate (BER) level of 10-8. The data rate is directly proportional to the diameter of the NWs.

关键词： III-V nanostructure electronic material

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Effect of Light Intensity on Schottky Barrier Widths and I-V Characteristics of Polymer Heterojunction Photodiodes

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MRS Online Proceedings Library 2011年第1期1359卷 107-112页

作者： Guvenc, Ali Bilge Ozkan, Cengiz Ozkan, Mihrimah Department of Electrical Engineering University of California Riverside Riverside USA Department of Mechanical Engineering University of California Riverside Riverside USA Material Science and Engineering Program University of California Riverside Riverside USA

The Schottky barriers that forms on the interface between aluminum and organic semiconductor of polymer heterojunction photodiodes based on poly(3-hexylthiophene): [6,6]-phenyl-C61-butyric acid methylester blend, has been investigated according to Mott-Schottky curves. We focused on the effect of light intensity on the Schottky barrier widths and I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different light intensities indicate a dependency of Schottky barrier to the light intensity.

关键词： thin film photovoltaic organic

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Reversible Tuning of the Electronic Properties of Graphene via Controlled Exposure to Electron Beam Irradiation and Annealing

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MRS Online Proceedings Library 2011年第1期1344卷 1-6页

作者： Desalegne Teweldebrhan Guanxiong Liu Alexander A. Balandin Nano-Device Laboratory Bourne College of Engineering University of California – Riverside Riverside U.S.A. Material Science and Engineering Program University of California – Riverside Riverside U.S.A.

Graphene reveals many extraordinary properties including extremely high room temperature carrier mobility and intrinsic thermal conductivity. Understanding how to controllably modify graphene’s properties is essential for its proposed applications. Here we report on a method for tuning the electrical properties of graphene via electron beam irradiation. It was observed that single-layer graphene is highly susceptible to the low-energy electron beams. We demonstrated that by controlling the irradiation dose one can change, by desired amount, the carrier mobility, shift the charge neutrality point, increase the resistance at the minimum conduction point, induce the “transport gap” and achieve current saturation in graphene. The change in graphene properties is due to defect formation on the graphene surface and in the graphene lattice. The changes are reversible by annealing until some critical irradiation dose is reached.

关键词： radiation effects electrical properties thin film

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Low-Temperature Deposition and Characterization of Al x In 1−x N Thin Films

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MRS Online Proceedings Library 2011年第1期449卷 301-306页

作者： Guohua Qiur J. O. Olowolafe Tao Peng K. M. Unruh C. P. Swann J. Piprek Department of Electrical Engineering University of Delaware Newark USA Material Science Program University of Delaware Newark USA Department of Physics and Astronomy University of Delaware Newark USA

Thin III-V nitride semiconductors fidms are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800–1000°C) for the films to grow epitaxially. In the present work, we deposited AlxIn1−xN films on Si substrates by reactive magnetron sputttering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The AlxIn1−xN films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of our AlxIn1−xN alloys varies from 1.9 ev to 4.2 ev The bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.

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Mechanical interactions of mouse mammary gland cells with a three-dimensional matrix construct

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2010 Annual Conference on Experimental and Applied Mechanics

作者： Lopez-Garcia, M.D.C. Beebe, D.J. Crone, W.C. Material Science Program Wisconsin Institutes for Medical Research University of Wisconsin - Madison Madison WI 53706 United States Department of Biomedical Engineering Wisconsin Institutes for Medical Research University of Wisconsin - Madison Madison WI 53706 United States Department of Engineering Physics University of Wisconsin - Madison 1500 Engineering Dr Madison WI 53706 United States

ISBN: (纸本)9781441994974

One risk factor associated with breast cancer is tissue or mammographic density which is directly correlated with the stiffness of the tissue. We undertook a study of mammary gland cells and their interactions with the extra-cellular matrix in a microfluidic platform. Mammary gland cells were seeded within collagen gels inside microchannels, using concentrations of 1.3, 2, and 3 mg/mL, along with fluorescent beads to track strains in the gel. The cells and beads were observed via four-dimensional imaging, tracking X, Y, Z positions over a three to four hour time frame. Three-dimensional elastic theory for an isotropic material was employed to calculate the stress. The technique presented adds to the field of measuring cell generated stresses by providing the capability of measuring 3D stresses locally around the single cell and using physiologically relevant materials properties for analysis. ©2010 Society for Experimental Mechanics Inc.

关键词： Cells

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Accelerated oxidation of silicon due to x-ray irradiation

Accelerated oxidation of silicon due to x-ray irradiation

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European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Shweta Bhandaru En Xia Zhang Daniel M. Fleetwood Robert A. Reed Robert A. Weller Sharon M. Weiss Interdisciplinary Graduate Program in Material Science Vanderbilt University Nashville TN USA Department of Electrical Engineering and Computer Science Vanderbilt University Nashville TN USA

Enhanced rates of oxide growth have been observed on silicon when exposed to high-energy x-ray irradiation. This observed effect could potentially be utilized for remote total ionizing dose-sensing applications.

关键词： Silicon Radiation effects Oxidation Atomic measurements Temperature measurement Optical sensors Atomic layer deposition

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Improvement of transmittance by fabricating broadband subwavelength anti-reflection structures for polycarbonate

Improvement of transmittance by fabricating broadband subwav...

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作者： Jang, H.S. Kim, J.H. Kim, K.S. Jung, G.Y. Lee, J.J. Kim, G.H. Division of Nano and Bio Technology Daegu-Gyeongbuk Institute of Science and Technology Dalseo-gu Daegu 704-230 Korea Republic of Department of Material Science and Engineering Program for Integrated Molecular System Gwangju Institute of Science and Technology Gwangju 500-712 Korea Republic of Nano-Mechanical Systems Research Division Korea Institute of Machinery and Materials Daejeon 305-343 Korea Republic of

We report on how to increase transmittance of a 0.2 mm thick polycarbonate (PC) film by periodic subwavelength anti-reflection structures in the visible spectral range. Subwavelength anti-reflection structures like moth-eyes are fabricated into the polycarbonate substrate itself by thermal nanoimprinting lithography (TH-NIL), which uses silicon stamps that have periodic structures such as gratings (lines and spaces) and pillared dots, and are fabricated by laser interference lithography (LIL) and transformer coupled plasma etching. To increase transmittance of a polycarbonate film, we control the periods and shapes of patterns, the number of patterned surfaces, and the overlapping direction of patterns that are fabricated into its surfaces. As a result of this, we show that average transmittance improves as the pattern period gets shorter and as both surfaces of the film are patterned. We also show that the spectrum range gets larger as the pattern period gets shorter and is determined by the longer pattern period in the case of designing a film to have different pattern period on its surfaces. The maximum average transmittance of a polycarbonate film increases up to approximately 6% compared to a bare sample in the 470-800 nm spectral range. Copyright © 2011 American Scientific Publishers All rights reserved.

关键词： Polycarbonates

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P-59: Thin-beam Crystallization Method for Fabrication of LTPS

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SID Symposium Digest of Technical Papers 2012年第1期36卷

作者： David S. Knowles Ji-Yong Park Chaiin Im Palash Das Thomas Hoffman Bernd Burfeindt Holger Muenz Alois Herkommer Paul C. van der Wilt Alex B. Limanov James S. Im Cymer Inc. 17075 Thornmint Ct. San Diego CA 92127 USA Carl Zeiss Laser Optics GmbH 73446 Oberkochen Germany Program in Material Science and Engineering Columbia University 500 West 120th Street New York NY 10027 USA

Thin film transistors fabricated using Low Temperature Polycrystalline Silicon (LTPS) have several well-known advantages over those made with amorphous Silicon: higher electron mobility, smaller size, higher speed. However, LTPS has not been widely adopted due to the relatively high cost and low yield of the process relative to a-Si. We have investigated a laser annealing process that offers an improvement for both throughput and yield when compared to existing processes. The process uses a very narrow laser beam (∼5 microns) at high repetition rates to create large poly-Si crystals via lateral growth. The beam length is long enough to allow the substrate to be scanned in a single pass, resulting in better uniformity without any seams seen in multi-pass techniques. In this presentation, we will present results from a prototype system used to validate the critical elements of the process.

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Data Transmission Performance of Few-Layer Graphene Ribbons

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MRS Online Proceedings Library 2011年第1期1344卷 1-6页

作者： Ali Bilge Guvenc Jian Lin Miroslav Penchev Cengiz Ozkan Mihrimah Ozkan Department of Electrical Engineering University of California-Riverside Riverside U.S.A. Department of Mechanical Engineering University of California-Riverside Riverside U.S.A. Material Science and Engineering Program University of California-Riverside Riverside U.S.A.

We investigated the electrical characteristics and digital data transmission performance few-layer graphene ribbons grown by chemical vapor deposition. Graphene ribbons having a mobility of 2,180 cm2V−1s−1 can sustain data rates up to 50 megabits per second at 1.5 µm length, thus the bandwidth is inversely proportional to resistance caused by defects in the graphene layers. Improving the graphene mobility to highest measured values (~200,000 cm2V−1s−1) and using structures with multiple coplanar transmission lines in parallel could carry the bandwidth beyond the gigabits per second level.

关键词： thin film chemical vapor deposition (CVD) (deposition) C

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