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作者： Jang, H.S. Kim, J.H. Kim, K.S. Jung, G.Y. Lee, J.J. Kim, G.H. Division of Nano and Bio Technology Daegu-Gyeongbuk Institute of Science and Technology Dalseo-gu Daegu 704-230 Korea Republic of Department of Material Science and Engineering Program for Integrated Molecular System Gwangju Institute of Science and Technology Gwangju 500-712 Korea Republic of Nano-Mechanical Systems Research Division Korea Institute of Machinery and Materials Daejeon 305-343 Korea Republic of

We report on how to increase transmittance of a 0.2 mm thick polycarbonate (PC) film by periodic subwavelength anti-reflection structures in the visible spectral range. Subwavelength anti-reflection structures like moth-eyes are fabricated into the polycarbonate substrate itself by thermal nanoimprinting lithography (TH-NIL), which uses silicon stamps that have periodic structures such as gratings (lines and spaces) and pillared dots, and are fabricated by laser interference lithography (LIL) and transformer coupled plasma etching. To increase transmittance of a polycarbonate film, we control the periods and shapes of patterns, the number of patterned surfaces, and the overlapping direction of patterns that are fabricated into its surfaces. As a result of this, we show that average transmittance improves as the pattern period gets shorter and as both surfaces of the film are patterned. We also show that the spectrum range gets larger as the pattern period gets shorter and is determined by the longer pattern period in the case of designing a film to have different pattern period on its surfaces. The maximum average transmittance of a polycarbonate film increases up to approximately 6% compared to a bare sample in the 470-800 nm spectral range. Copyright © 2011 American Scientific Publishers All rights reserved.

关键词： Polycarbonates

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P-59: Thin-beam Crystallization Method for Fabrication of LTPS

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SID Symposium Digest of Technical Papers 2012年第1期36卷

作者： David S. Knowles Ji-Yong Park Chaiin Im Palash Das Thomas Hoffman Bernd Burfeindt Holger Muenz Alois Herkommer Paul C. van der Wilt Alex B. Limanov James S. Im Cymer Inc. 17075 Thornmint Ct. San Diego CA 92127 USA Carl Zeiss Laser Optics GmbH 73446 Oberkochen Germany Program in Material Science and Engineering Columbia University 500 West 120th Street New York NY 10027 USA

Thin film transistors fabricated using Low Temperature Polycrystalline Silicon (LTPS) have several well-known advantages over those made with amorphous Silicon: higher electron mobility, smaller size, higher speed. However, LTPS has not been widely adopted due to the relatively high cost and low yield of the process relative to a-Si. We have investigated a laser annealing process that offers an improvement for both throughput and yield when compared to existing processes. The process uses a very narrow laser beam (∼5 microns) at high repetition rates to create large poly-Si crystals via lateral growth. The beam length is long enough to allow the substrate to be scanned in a single pass, resulting in better uniformity without any seams seen in multi-pass techniques. In this presentation, we will present results from a prototype system used to validate the critical elements of the process.

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Data Transmission Performance of Few-Layer Graphene Ribbons

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MRS Online Proceedings Library 2011年第1期1344卷 1-6页

作者： Ali Bilge Guvenc Jian Lin Miroslav Penchev Cengiz Ozkan Mihrimah Ozkan Department of Electrical Engineering University of California-Riverside Riverside U.S.A. Department of Mechanical Engineering University of California-Riverside Riverside U.S.A. Material Science and Engineering Program University of California-Riverside Riverside U.S.A.

We investigated the electrical characteristics and digital data transmission performance few-layer graphene ribbons grown by chemical vapor deposition. Graphene ribbons having a mobility of 2,180 cm2V−1s−1 can sustain data rates up to 50 megabits per second at 1.5 µm length, thus the bandwidth is inversely proportional to resistance caused by defects in the graphene layers. Improving the graphene mobility to highest measured values (~200,000 cm2V−1s−1) and using structures with multiple coplanar transmission lines in parallel could carry the bandwidth beyond the gigabits per second level.

关键词： thin film chemical vapor deposition (CVD) (deposition) C

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High Performance High Dielectric Constant Films Deposited by Dual Spectral Source Rapid Isothermal Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

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MRS Online Proceedings Library (OPL) 2011年第1期470卷 133-133页

作者： Y. Chen R. Singh S. DeBoer R.P.S. Thakur Department of Electrical and Computer Engineering Clemson University Clemson SC 29634 Department of Electrical and Computer Engineering and Material Science and Engineering Program Clemson University Clemson SC 29634 singh@ces.clemson.edu Micron Technology Inc. Boise ID 83706

Dual spectral source assisted MOCVD is an ideal technique for the deposition of high dielectric constant materials as well as other electronic and optical materials. Tungsten halogen lamps and a deuterium lamp are used as the sources of optical and thermal energy. Ta2O5 films were deposited at 200°C for 30 minutes and annealed at 600°C for 30 minutes have shown leakage current densities as low as 10−10 A/ cm2 for gate voltage under 5V. To the best of our knowledge, these are the best results reported to date by other researchers. The high energy photons used in the in-situ cleaning and deposition process play an important role in obtaining high quality films of Ta2O5.

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Analysis of high growth rate MOCVD structures by solar cell device measurements

Analysis of high growth rate MOCVD structures by solar cell ...

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2011 37th IEEE Photovoltaic Specialists Conference

作者： Ken Schmieder Chelsea Haughn Ziggy Pulwin Devon Dyer James Mutitu Matt Doty Chris Ebert Allen Barnett Solar Power Program Electrical & Computer Engineering University of Delaware Newark DE USA Material Science & Engineering University of Delaware Newark DE USA Veeco MOCVD Somerset NJ USA

Metal organic chemical vapor deposition (MOCVD) tools are integral to many technologies, including the growth of high-efficiency multijunction III-V solar cells. Veeco MOCVD has recently developed new tool designs that allow increased MOCVD growth rates that could drastically increase solar cell throughput and reduce manufacturing costs. It is important, however, to understand the trade-offs between increased throughput and decreased material quality and device performance. We fabricate multijunction III-V solar cells from materials grown by both standard and fast growth rate techniques. We analyze the open circuit voltage, short circuit current, fill factor, efficiency, and ideality factor of both types of devices. Comparison of these devices reveals that the existing fast growth protocols result in solar cells with similar performance to standard growth cells. The results suggest that increased growth rates can enable higher throughput fabrication of solar cells without significant performance sacrifices.

关键词： Photovoltaic cells materials MOCVD Performance evaluation Photovoltaic systems Current measurement

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Responses of human fetal mesenchymal stem cells to various poly(Ε-caprolactone) films: A comparison study

Responses of human fetal mesenchymal stem cells to various p...

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2011 Defense science Research Conference and Expo, DSR 2011

作者： Wang, Zu-Yong Jing, Lim Zhang, Qin-Yuan Teo, Erin Y. Chan, Jerry Hong, Ming-Hui Wen, Feng Teoh, Swee-Hin Department of Mechanical Engineering National University of Singapore Singapore Department of Obstetrics and Gynaecology National University of Singapore Singapore Department of Reproductive Medicine KK Women's and Children's Hospital Singapore Cancer and Stem Cell Biology Program Duke-NUS Graduate Medical School Singapore Department of Electrical and Computer Engineering National University of Singapore Singapore School of Material Science and Engineering Nanyang Technology University Singapore National University of Singapore Singapore

ISBN: (纸本)9781424492763

Poly(Ε-caprolactone) (PCL) films have been applied for vascular tissue engineering. However, few studies studied the effects of fabrication process of PCL film on vascular cell proliferation. In this study, we used different processing methods, incorporating stretching, to fabricate various PCL films. Thickness of films before and after stretch and proliferation ability of human fetal mesenchymal stem cells (hfMSCs) on these films were investigated. Our results showed that stretching significantly reduces the thickness of solvent cast, heat press and cast stretch films (0.22, 0.59, 0.60, p

关键词： Cell proliferation

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DC/AC Performance Analysis of Indium Antimonide Nanowires

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MRS Online Proceedings Library (OPL) 2011年第1期1336卷 mrss11-1336-p03-07-mrss11-1336-p03-07页

作者： Ali Bilge Guvenc Miroslav Penchev Jiebin Zhong Cengiz Ozkan Mihrimah Ozkan Department of Electrical Engineering University of California-Riverside Riverside CA 92521 U.S.A. Department of Mechanical Engineering University of California-Riverside Riverside CA 92521 U.S.A. Material Science and Engineering Program University of California-Riverside Riverside CA 92521 U.S.A.

We investigated the electrical properties and transmission line performance of indium antimonide nanowires. The results indicate that the of nanowires suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the contact resistances, scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. nanowires show extremely inductive behavior during the AC measurements and due to these parasitic parameters, they can sustain transmission for the signals having frequencies up to 10 MHz. The bandwidth of the nanowires is directly proportional to the diameter of the nanowires. Improving the mobility to higher values and introducing de-embedding and impedance matching to the measurements and analysis could easily carry the bandwidth beyond GHz levels.

关键词： electrical properties chemical vapor deposition (CVD) (deposition) nanoscale

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Micromachined anti-scatter grid fabricated using crystalline wet etching of (1 1 0) silicon and metal electroplating for X-ray imaging

Micromachined anti-scatter grid fabricated using crystalline...

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作者： Jeong, Dae-Hun Myung Kim, Jae Noh, Do Young Hyun Kim, Kwang Lee, Jong-Hyun 261 Cheomdan-gwagiro Buk-gu 500-712 Gwangju Korea Republic of School of Material Science and Engineering GIST 261 Cheomdan-gwagiro Buk-gu 500-712 Gwangju Korea Republic of Department of Biomedical Engineering Jungwon University #5 Goesan-eup Goesan-gun 367-805 Chungcheongbuk-do Korea Republic of Graduate-program of Medical System Engineering GIST 261 Cheomdan-gwagiro Buk-gu 500-712 Gwangju Korea Republic of

Two-dimensional micromachined anti-scatter grids were fabricated using MEMS technology, including crystalline wet etching of (1 1 0) silicon and metal electroplating for X-ray imaging. The core sizes of the square grids were 100, 200, and 300 μm with 2.2 mm height and 50 μm septa thickness. To prepare the etch mask for crystalline wet etching, silicon nitride was deposited using low pressure chemical vapor deposition (LPCVD). The grid patterns, which are aligned parallel to the vertical (1 1 1) plane of the (1 1 0) silicon, were transferred from the photomask onto the photoresist using deep ultraviolet (DUV) photolithography, and consecutively onto the silicon nitride using reactive ion etching (RIE). A (1 1 0) silicon substrate was then etched in a tetramethyl ammonium hydroxide (TMAH) solution to form a skeleton for the septa structure. Chrome was sputtered to provide a seed layer for nickel electroplating, where nickel grows on the sidewalls of the skeleton of the septa structure. Finally, two-dimensional septa with various grid ratios were constructed by cross-stacking several layers of the patterned (1 1 0) silicon wafer. Anti-scattering ability was experimentally characterized in terms of X-ray transmission by one-dimensional scanning of incident angle. © 2010 Elsevier B.V.

关键词： Photoresists

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Low temperature NMR relaxation and rattling phonons in type-ⅠBasGa16Sn30 clathrates

Low temperature NMR relaxation and rattling phonons in type-...

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The 26th International Conference on Low Temperature Physics (第26届国际低温物理大会)

作者： Xiang Zheng Sergio Y.Rodriguez Joseph H.Ross Department of Physics and Astronomy Texas A(&)M UniversityCollege StationTX 77843-4242USA Material Science and Engineering Program Texas A &M UniversityCollege StationTX 77843-3003USA

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Phonon transport and thermoelectricity in defect-engineered InAs nanowires

Phonon transport and thermoelectricity in defect-engineered ...

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2011 MRS Fall Meeting

作者： Weathers, Annie Moore, Arden L. Pettes, Michael T. Salta, Daniel Kim, Jaehyun Dick, Kimberly Samuelson, Lars Linke, Heiner Caroff, Philippe Shi, Li Department of Mechanical Engineering University of Texas at Austin Austin TX United States Material Science and Engineering Graduate Program University of Texas at Austin Austin TX United States Center for Nano and Molecular Science University of Texas at Austin Austin TX United States Division of Solid State Physics Lund University S-22100 Lund Sweden Polymer and Materials Chemistry Lund University S-22100 Lund Sweden Institut d'Electronique de Microelectronique et de Nanotechnologie UMR CNRS 8520 F-59652 Villeneuve d'Ascq France

ISBN: (纸本)9781627482219

There have been reports of improvements in the thermoelectric figure of merit through the use of nanostructured materials to suppress the lattice thermal conductivity. Here, we report on a fundamental study of the combined effects of defect planes and surface scattering on phonon transport and thermoelectric properties of defect-engineered InAs nanowires. A microfabricated device is employed to measure the thermal conductivity and thermopower of individual suspended indium arsenide nanowires grown by metal organic vapor phase epitaxy. The four-probe measurement device consists of platinum resistance thermometers and electrodes patterned on two adjacent SiNx membranes. A nanowire was suspended between the two membranes, and electrical contact between the nanowire and the platinum electrodes was made with the evaporation of a Ni/Pd film through a shadow mask. The exposed back side of the device substrate allows for characterization of the crystal structure of the suspended nanowire with transmission electron microscopy (TEM) following measurement. The 100-200 nm diameter zincblende (ZB) InAs nanowire samples were grown with randomly spaced twin defects, stacking faults, or phases boundaries perpendicular to the nanowire growth direction, as revealed by transmission electron microscopy (TEM) analysis. Compared to single-crystal ZB InAs nanowires with a similar lateral dimension, the thermal conductivity of the defect-engineered nanowires is reduced by fifty percent at room temperature. © 2012 materials Research Society.

关键词： Nanowires

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