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arXiv 2022年

作者： Angelopoulos, V. Zhang, X.-J. Artemyev, A.V. Mourenas, D. Tsai, E. Wilkins, C. Runov, A. Liu, J. Turner, D.L. Li, W. Khurana, K. Wirz, R.E. Sergeev, V.A. Meng, X. Wu, J. Hartinger, M.D. Raita, T. Shen, Y. An, X. Shi, X. Bashir, M.F. Shen, X. Gan, L. Qin, M. Capannolo, L. Ma, Q. Russell, C.L. Masongsong, E.V. Caron, R. He, I. Iglesias, L. Jha, S. King, J. Kumar, S. Le, K. Mao, J. McDermott, A. Nguyen, K. Norris, A. Palla, A. Roosnovo Tam, J. Xie, E. Yap, R.C. Ye, S. Young, C. Adair, L.A. Shaffer, C. Chung, M. Cruce, P. Lawson, M. Leneman, D. Allen, M. Anderson, M. Arreola-Zamora, M. Artinger, J. Asher, J. Branchevsky, D. Cliffe, M. Colton, K. Costello, C. Depe, D. Domae, B.W. Eldin, S. Fitzgibbon, L. Flemming, A. Frederick, D.M. Gilbert, A. Hesford, B. Krieger, R. Lian, K. McKinney, E. Miller, J.P. Pedersen, C. Qu, Z. Rozario, R. Rubly, M. Seaton, R. Subramanian, A. Sundin, S.R. Tan, A. Thomlinson, D. Turner, W. Wing, G. Wong, C. Zarifian, A. Earth Planetary and Space Sciences Department Institute of Geophysics and Planetary Physics University of California Los Angeles Los AngelesCA90095 United States University of Texas at Dallas RichardsonTX75080 United States CEA DAM DIF Arpajon France Atmospheric and Oceanic Sciences Departments University of California Los AngelesCA United States Johns Hopkins University Applied Physics Laboratory LaurelMD United States Department of Astronomy Center for Space Physics Boston University BostonMA United States Mechanical and Aerospace Engineering Department Henry Samueli School of Engineering University of California Los AngelesCA90095 United States School of Mechanical Industrial Manufacturing Engineering Oregon State University CorvallisOR97331 United States University of St. Petersburg St. Petersburg Russia Jet Propulsion Laboratory California Institute of Technology PasadenaCA91109 United States Space Science Institute BoulderCO80301 United States Sodankylä Geophysical Observatory University of Oulu Sodankylä Finland Materials Science and Engineering Department Henry Samueli School of Engineering University of California Los AngelesCA90095 United States Deloitte Consulting New YorkNY10112 United States Computer Science Department Henry Samueli School of Engineering University of California Los AngelesCA90095 United States Microsoft RedmondWA98052 United States Physics and Astronomy Department University of California Los AngelesCA90095 United States Department of Astronomy and Astrophysics The University of Chicago ChicagoIL60637 United States Raybeam Inc. Mountain ViewCA94041 United States SpaceX HawthorneCA90250 United States Reliable Robotics Corporation Mountain ViewCA94043 United States Los Alamos National Laboratory Los AlamosNM87545 United States Mathematics Department University of California Los AngelesCA90095 United States Planet Labs PBC San FranciscoCA94107 United States KSAT Inc. De

We review comprehensive observations of electromagnetic ion cyclotron (EMIC) wave-driven energetic electron precipitation using data from the energetic electron detector on the Electron Losses and Fields InvestigatioN (ELFIN) mission, two polar-orbiting low-altitude spinning CubeSats, measuring 50-5000 keV electrons with good pitch-angle and energy resolution. EMIC wave-driven precipitation exhibits a distinct signature in energy-spectrograms of the precipitating-to-trapped flux ratio: peaks at >0.5 MeV which are abrupt (bursty) (lasting ∼17s, or ∆L ∼ 0.56) with significant substructure (occasionally down to sub-second timescale). We attribute the bursty nature of the precipitation to the spatial extent and structuredness of the wave field at the equator. Multiple ELFIN passes over the same MLT sector allow us to study the spatial and temporal evolution of the EMIC wave - electron interaction region. Case studies employing conjugate ground-based or equatorial observations of the EMIC waves reveal that the energy of moderate and strong precipitation at ELFIN approximately agrees with theoretical expectations for cyclotron resonant interactions in a cold plasma. Using 2 years of ELFIN data uniformly distributed in local time, we assemble a statistical database of ∼50 events of strong EMIC wave-driven precipitation. Most reside at L ∼ 5 − 7 at dusk, while a smaller subset exists at L ∼ 8 − 12 at post-midnight. The energies of the peak-precipitation ratio and of the half-peak precipitation ratio (our proxy for the minimum resonance energy) exhibit an L-shell dependence in good agreement with theoretical estimates based on prior statistical observations of EMIC wave power spectra. The precipitation ratio’s spectral shape for the most intense events has an exponential falloff away from the peak (i.e., on either side of ∼ 1.45 MeV). It too agrees well with quasi-linear diffusion theory based on prior statistics of wave spectra. It should be noted though that this diffusive

关键词： Radiation belts

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High Performance GaN HEMT and Ge Fin FET Device Realizing by Atomic-layer Defect-free Etching with Chlorine Neutral Beam

High Performance GaN HEMT and Ge Fin FET Device Realizing by...

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International Symposium on VLSI Technology, Systems and Applications

作者： Daisuke Ohori Niraj Man Shrestha Yiming Li Jenn-Hwan Tarng Seiji Samukawa Department of Electrical and Computer Engineering National Chiao Tung University Hsinchu Taiwan 2-1-1 Katahira Aoba-ku Institute of Fluid Science Tohoku University Sendai Japan Center for mmWave Smart Radar System and Technologies National Chiao Tung University Hsinchu Taiwan National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki Japan 2-1-1 Katahira Aoba-ku Advanced Institute for Materials Research Tohoku University Sendai Japan

ISBN: (数字)9781728142326

ISBN: (纸本)9781728142333

In the fabrication of semiconductor devices, reactive plasmas are widely used in key processes such as microfabrication, surface modification and film deposition, and there are now demands for processing precision at the atomic layer level, and for deposition accuracy that allows the control of structures at the molecular level. However, in ultra-miniature nanoscale devices that will become the mainstream in the future, the use of plasma processes can cause serious problems such as abnormal etching and breakdown of insulation films by the accumulation of ions or electrons emitted from the plasma as shown in Fig. 1, also the formation of surface defects (dangling bond) of over a few tens nm in depth by exposure to ultraviolet (UV) emissions from the plasma. [1] -[4] In particular, since nano-scale devices have a larger surface area compared with the bulk material, plasma processes can have a large influence on the electrical and optical properties of devices due to process-induced defects caused by ultraviolet exposure, which has not caused a problem in the presented devices of 32 nm. Furthermore, since future nanodevices will require size control of three-dimensional structures at the atomic layer level, it will be absolutely essential to control surface chemical reactions with high precision and selectivity at the atomic layer level. Neutral beam process technology has attracted attention as a way of solving these issues [5], [6], as shown in Fig. 2. The neutral beam suppresses the incidence of charged particles and UV photon radiation onto the substrate, and is able to expose the substrate only to energy controlled neutral beam (neutral beam motion energy can be precisely controlled by ion acceleration energy with the applied electric field before neutralization), resulting in ultra-precise nano-processing that can suppress the formation of defects at the atomic layer level and control surface chemical reactions with high precision.

关键词： Atomic layer deposition Process control Ions Nanoscale devices Etching Substrates Chemicals

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All-Inorganic Quantum-Dot LEDs Based on a Phase-Stabilized α-CsPbI3Perovskite

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Angewandte Chemie 2021年第29期133卷

作者： Ya-Kun Wang Fanglong Yuan Yitong Dong Jiao-Yang Li Andrew Johnston Bin Chen Makhsud I. Saidaminov Chun Zhou Xiaopeng Zheng Yi Hou Koen Bertens Hinako Ebe Dongxin Ma Zhengtao Deng Shuai Yuan Rui Chen Laxmi Kishore Sagar Jiakai Liu James Fan Peicheng Li Xiyan Li Yuan Gao Man-Keung Fung Zheng-Hong Lu Osman M. Bakr Liang-Sheng Liao Edward H. Sargent Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 Canada Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China Department of Materials Science and Engineering University of Toronto 184 College Street Toronto Ontario M5S 3G4 Canada Present address: Department of Chemistry and Electrical & Computer Engineering Centre for Advanced Materials and Related Technologies (CAMTEC) University of Victoria Victoria British Columbia Canada Division of Physical Sciences and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia College of Engineering and Applied Sciences State Key Laboratory of Analytical Chemistry for Life Science Nanjing University Nanjing Jiangsu 210023 P. R. China Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen Guangdong 518055 P. R. China

The all-inorganic nature of CsPbI 3 perovskites allows to enhance stability in perovskite devices. Research efforts have led to improved stability of the black phase in CsPbI 3 films; however, these strategies—including strain and doping—are based on organic-ligand-capped perovskites, which prevent perovskites from forming the close-packed quantum dot (QD) solids necessary to achieve high charge and thermal transport. We developed an inorganic ligand exchange that leads to CsPbI 3 QD films with superior phase stability and increased thermal transport. The atomic-ligand-exchanged QD films, once mechanically coupled, exhibit improved phase stability, and we link this to distributing strain across the film. Operando measurements of the temperature of the LEDs indicate that KI-exchanged QD films exhibit increased thermal transport compared to controls that rely on organic ligands. The LEDs exhibit a maximum EQE of 23 % with an electroluminescence emission centered at 640 nm (FWHM: ≈31 nm). These red LEDs provide an operating half-lifetime of 10 h (luminance of 200 cd m −2 ) and an operating stability that is 6× higher than that of control devices.

关键词： CsPbI3 quantum dots inorganic ligand exchange perovskite LEDs pure red emission strain engineering

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Negative Piezoresistive Effect in a Stretchable Device Based on a Soft Tunneling Barrier

Research Square

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Research Square 2020年

作者： Chae, Soosang Fotev, Ivan Bittrich, Eva Choi, Won Jin Uhlmann, Petra Schubert, Mathias Pashkin, Alexej Fery, Andreas Leibniz-Institut für Polymerforschung Dresden e.V Hohe Straße 6 Dresden01069 Germany Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf Dresden01328 Germany Technische Universität Dresden Dresden01062 Germany Departement of Materials Science and Engineering University of Michigan Ann ArborMI United States Department of Chemistry University of Nebraska-Lincoln LincolnNE68588 United States Department of Electrical and Computer Engineering University of Nebraska-Lincoln LincolnNE68588 United States Linkoping University Linkoping58183 Sweden

Piezoresistive soft composite materials are widely used in strain sensing and typically exhibit a decrease in conductivity upon elongation—the so-called positive gauge effect. We demonstrate a thin-film architecture that features the inverse behavior: a strain-induced transition from insulating to metallic conductivity, spanning nine orders of magnitude in conductivity. Our approach is based on a nanometer-scale sandwiched bilayer Au thin film with a polydimethylsiloxane elastomeric barrier layer. Upon application of strain, the thickness of the thin soft barrier decreases because of the strain governed by the Poisson effect, followed by electron-tunneling currents through the barrier, forming an interconnected bilayer metal electrode. An extremely high on–off electrical conductivity ratio (~109) is observed over a wide range of working strains (as high as 130%), which mimics the ideal features of a mechanical-force-controlled electric transistor. This conceptual design strategy is expected to benefit a wide range of applications in which operation under minimal standby power could be an essential feature, such as in implantable soft strain sensors and in prosthetic long-term monitoring systems for detecting sudden a swelling/volume expansion of human body organs or blood vessels, thereby helping to avoid acute and severe syndromes. © 2020, CC BY.

关键词： Thin films

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Quantum prediction of ultra-low thermal conductivity in lithium intercalation materials

arXiv

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arXiv 2019年

作者： Feng, Tianli O'Hara, Andrew Pantelides, Sokrates T. Department of Physics and Astronomy Department of Electrical Engineering and Computer Science Vanderbilt University NashvilleTN37235 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN37831 United States

Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip storage. Thermal transport properties, although being a crucial element in limiting the charging/discharging rate, package density, energy efficiency, and safety of batteries as well as the controllability and energy consumption of memristors, are poorly managed or even understood yet. Here, for the first time, we employ quantum calculations including high-order lattice anharmonicity and find that the thermal conductivity κ of LixTMO2 materials is significantly lower than hitherto believed. More specifically, the theoretical upper limit of K of LiCoO2 is 6 W/m-K, 2-6 times lower than the prior theoretical predictions. Delithiation further reduces K by 40-70% for LiCoO2 and LiNbO2. Grain boundaries, strains, and porosity are yet additional causes of thermal-conductivity reduction, while Li-ion diffusion and electrical transport are found to have only a minor effect on phonon thermal transport. The results elucidate several long-standing issues regarding the thermal transport in lithium-intercalated materials and provide guidance toward designing high-energy-density batteries and controllable memristors. Copyright © 2019, The Authors. All rights reserved.

关键词： Thermal conductivity

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Guided mode resonances in flexible 2D THz photonic crystals

arXiv

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arXiv 2020年

作者： Kyaw, C. Yahiaoui, R. Chase, Z.A. Tran, V. Baydin, A. Tay, F. Kono, J. Manjappa, M. Singh, R. Abeysinghe, D.C. Urbas, A.M. Searles, T.A. Department of Physics and Astronomy Howard University WashingtonDC20059 United States Department of Electrical and Computer Engineering Rice University HoustonTX70005 United States Department of Physics and Astronomy Rice University HoustonTX70005 United States Department of Materials Science and Nanoengineering Rice University HoustonTX70005 United States Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore637371 Singapore Air Force Research Laboratory Materials and Manufacturing Directorate Wright-Patterson Air Force BaseOH45433 United States

In terahertz (THz) photonics, there is an ongoing effort to develop thin, compact devices such as dielectric photonic crystal (PhC) slabs with desirable light matter interactions. However, previous works in THz PhC slabs are limited to rigid substrates with thicknesses ∼ 100s of micrometers. Dielectric PhC slabs have been shown to possess in-plane modes that are excited by external radiation to produce sharp guided mode resonances with minimal absorption for applications in sensors, optics and lasers. Here, we confirm the existence of guided resonances in a membrane-type THz PhC slab with subwavelength (λ0/6 - λ0/12) thicknesses of flexible dielectric polyimide films. The transmittance of the guided resonances was measured for different structural parameters of the unit cell. Furthermore, we exploited the flexibility of the samples to modulate the linewidth of the guided modes down to 1.5 GHz for bend angle of θ ≥ 5◦;confirmed experimentally by the suppression of these modes. The mechanical flexibility of the device allows for an additional degree of freedom in system design for optical components for high-speed communications, soft wearable photonics and implantable medical devices. Copyright © 2020, The Authors. All rights reserved.

关键词： Photonic crystals

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Light emission from self-assembled and laser-crystallized chalcogenide metasurface

arXiv

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arXiv 2020年

作者： Wang, Feifan Wang, Zi Mao, Dun Chen, Mingkun Li, Qiu Kananen, Thomas Fang, Dustin Soman, Anishkumar Hu, Xiaoyong Arnold, Craig B. Gu, Tingyi Electrical and Computer Engineering University of Delaware NewarkDE19716 United States State Key Laboratory for Mesoscopic Physics Department of Physics Collaborative Innovation Center of Quantum Matter Peking University Beijing100871 China Tianjin Key Laboratory of High Speed Cutting and Precision Machining School of Mechanical Engineering Tianjin University of Technology and Education Tianjin300222 China Princeton Institute for the Science and Technology of Materials Princeton University PrincetonNJ08544 United States

Subwavelength periodic confinement can collectively and selectively enhance local light intensity and enable control over the photo-induced phase transformations at the nanometer scale. Standard nanofabrication process can result in geometrical and compositional inhomogeneities in optical phase change materials, especially chalcogenides, as those materials exhibit poor chemical and thermal stability. Here we demonstrate the self-assembled planar chalcogenide nanostructured array with resonance enhanced light emission to create an all-dielectric optical metasurface, by taking advantage of the fluid properties associated with solution processed films. A patterned silicon membrane serves as a template for shaping the chalcogenide metasurface structure. Solution-processed arsenic sulfide metasurface structures are self-assembled in the suspended 250 nm silicon membrane templates. The periodic nanostructure dramatically manifests the local light-matter interaction such as absorption of incident photons, Raman emission, and photoluminescence. Also, the thermal distribution is modified by the boundaries and thus the photo-thermal crystallization process, leading to the formation of anisotropic nano-emitters within the field enhancement area. This hybrid structure shows wavelength selective anisotropic photoluminescence, which is a characteristic behavior of the collective response of the resonant guided modes in a periodic nanostructure. The resonance enhanced Purcell effect could manifest the quantum efficiency of localized light emission. Copyright © 2020, The Authors. All rights reserved.

关键词： Sulfur compounds

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Green wavelength-tuning and -switching operation in holmium-doped all-fiber lasers

Green wavelength-tuning and -switching operation in holmium-...

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Advanced Solid State Lasers, ASSL 2018

作者： Li, Wensong Cai, Zhiping Guan, Xiaofeng Xu, Huiying Department of Electronic Engineering Xiamen University Xiamen361005 China Holcombe Department of Electrical and Computer Engineering Center for Optical Materials Science and Engineering Technologies Clemson University AMRL Building 91 Technology Drive AndersonSC29625 United States

We experimentally developed tunable and switchable Ho3+-doped all-fiber lasers operating at green wavelengths. With an increase of incident pump powers, tunable single-wavelength and switchable multi-wavelength emissi... 详细信息

ISBN: (纸本)9781943580484

关键词： Fiber lasers

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Oxygen incorporation in the MBE growth of ScxGa1-xN and ScxAl1-xN

arXiv

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arXiv 2019年

作者： Casamento, Joseph Xing, Huili Grace Jena, Debdeep Department of Materials Science and Engineering Cornell University IthacaNY14853 United States School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Kavli Institute at Cornell for Nanoscale Science Cornell University IthacaNY14853 United States

Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam epitaxy (MBE). In the ScxGa1-xN/GaN heterostructure grown in metal rich conditions on GaN-SiC template substrates with Sc contents up to 28 atomic percent, the oxygen concentration is found to be below 1x1019/cm3, with an increase directly correlated with the Scandium content. In the ScxAl1-xN-AlN heterostructure grown in nitrogen rich conditions on AlN-Al2O3 template substrates with Sc contents up to 26 atomic percent, the oxygen concentration is found to be between 1019 to 1021/cm3, again directly correlated with the Sc content. The increased oxygen and carbon arises during the deposition of scandium alloyed layers. Copyright © 2019, The Authors. All rights reserved.

关键词： III-V semiconductors

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Electron Acceleration in Carbon Nanotubes

arXiv

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arXiv 2025年

作者： Bonţoiu, Cristian Bonatto, Alexandre Apsimon, Öznur Bandiera, Laura Cavoto, Gianluca Drebot, Illya Gatti, Giancarlo Giner-Navarro, Jorge Lei, Bifeng Martín-Luna, Pablo Rago, Ilaria Pérez, Juan Rodríguez Nunes, Bruno Silveira Sytov, Alexei Valagiannopoulos, Costas Welsch, Carsten P. Xia, Guoxing Resta-López, Javier Department of Physics University of Liverpool Oxford Street LiverpoolL69 7ZE United Kingdom Graduate Program in Information Technology and Healthcare Management the Beam Physics Group Federal University of Health Sciences of Porto Alegre RS Porto Alegre90050-170 Brazil Department of Physics and Astronomy University of Manchester Oxford Road ManchesterM13 9PL United Kingdom Cockroft Institute Keckwick Lane Daresbury WarringtonWA4 4AD United Kingdom INFN Sezione di Ferrara Via Saragat 1 Ferrara44122 Italy Dipartimento di Fisica Sapienza Università di Roma Piazzale Aldo Moro 2 Roma00185 Italy INFN Sezione di Roma Piazzale Aldo Moro 2 Rome00185 Italy INFN Sezione di Milano Via G. Celoria 16 Milano20133 Italy Centro de Láseres Pulsados Building M5 Science Park Calle Adaja 8 Salamanca Villamayor37185 Spain Universidad de Valencia Paterna46071 Spain Universidad de Valencia CSIC Paterna46980 Spain Nuclear and Energy Research Institute IPEN–CNEN SP São Paulo Brazil National Technical University of Athens School of Electrical and Computer Engineering Zografou157 73 Greece Departamento de Física Aplicada y Electromagnetismo Universidad de Valencia Burjassot46100 Spain

Laser wakefield acceleration (LWFA) may achieve TeV/m gradients using high-density solid-state plasmas as accelerating media. However, the application of bulk solid materials requires attosecond laser pulses, such as X-ray lasers, to drive wakefields at these high densities. Additionally, the short wakefield wavelengths associated with solid-state plasmas greatly limit the accelerating length. An alternative approach employs 2D carbon-based nanomaterials, like graphene or carbon nanotubes (CNTs), configured into structured targets. These nanostructures are designed with voids or low-density regions to effectively reduce the overall plasma density. This reduction enables the use of longer-wavelength lasers and also extends the plasma wavelength and the acceleration length. In this study, we present, to our knowledge, the first numerical demonstration of electron acceleration via self-injection into a wakefield bubble driven by an infrared laser pulse in structured CNT targets, similar to the behavior observed in gaseous plasmas for LWFA in the nonlinear (or bubble) regime. Using the PIConGPU code, bundles of CNTs are modeled in a 3D geometry as 25 nm-thick carbon tubes with an initial density of 1022 cm−3. The carbon plasma is ionized by a three-cycle, 800 nm wavelength laser pulse with a peak intensity of 1021 W cm−2, achieving an effective plasma density of 1020 cm−3. The same laser also drives the wakefield bubble, responsible for the electron self-injection and acceleration. Simulation results indicate that fs-long electron bunches with hundreds of pC charge can be self-injected and accelerated at gradients exceeding 1 TeV/m. Both charge and accelerating gradient figures are unprecedented when compared with LWFA in gaseous plasma. © 2025, CC BY-NC-ND.

关键词： X ray lasers

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