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Low resistivity and high breakdown current density of 10-nm diameter van der waals tase3nanowires by chemical vapor deposition

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arXiv 2019年

作者： Empante, Thomas A. Martinez, Aimee Wurch, Michelle Zhu, Yanbing Geremew, Adane K. Yamaguchi, Koichi Isarraraz, Miguel Rumyantsev, Sergey Reed, Evan J. Balandin, Alexander A. Bartels, Ludwig Department of Chemistry and Material Science & Engineering Program University of California - Riverside RiversideCA92521 United States Department of Materials Science and Engineering Stanford University StanfordCA94304 United States Nano-Device Laboratory Department of Electrical and Computer Engineering University of California RiversideCA92521 United States Center for Terahertz Research and Applications Institute of High Pressure Physics Polish Academy of Sciences Warsaw01-142 Poland

Micron-scale single-crystal nanowires of metallic TaSe3, a material that forms -Ta-Se3-TaSe3- stacks separated from one another by a tubular van der Waals (vdW) gap, have been synthesized using chemical vapor deposition (CVD) on a SiO2/Si substrate, in a process compatible with semiconductor industry requirements. Their electrical resistivity was found unaffected by downscaling from the bulk to as little as 7 nm in width and height, in striking contrast to the resistivity of copper for the same dimensions. While the bulk resistivity of TaSe3is substantially higher than that of bulk copper, at the nanometer scale the TaSe3wires become competitive to similar-sized copper ones. Moreover, we find that the vdW TaSe3nanowires sustain current densities in excess of 108A/cm2and feature an electromigration energy barrier twice that of copper. The results highlight the promise of quasi-onedimensional transition metal trichalcogenides for electronic interconnect applications and the potential of van der Waals materials for downscaled electronics. Copyright © 2019, The Authors. All rights reserved.

关键词： Van der Waals forces

Instant Messaging as Information Goldmines to Digital Forensic: A Systematic Review 3

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Instant Messaging as Information Goldmines to Digital Forens...

3rd International Conference on Information Management and Technology, ICIMTech 2018

作者： Sihombing, Harry Chandra Fajar, Ahmad Nurul Utama, Ditdit Nugeraha Mercu Buana University Master of Electrical Engineering Jakarta Indonesia Information Systems Management Department Bina Nusantara University BINUS Graduate Program-Master of Information Systems Management Jakarta11480 Indonesia Computer Science Department Bina Nusantara University BINUS Graduate Program-Master of Computer Science Jakarta11480 Indonesia

ISBN: (纸本)9781538658215

The use of instant messaging (IM) application is very communal among smartphone users, as it delivers ease in interaction and communication. The speed at which technologies, growth, and expansion of networks infrastructure for high-speed data networks (e.g. wifi, 4G, etc.) are changing and the high number of IM applications are available. IM application usage is significantly escalating, also for doing illegitimate purposes, particularly to organize and coordinate criminal acts. They are practically exploited by the criminality groups involved when they target and interact with the victims, or try to run away from criminal occurrences. By systematically conducting a review to understand and to investigate IM applications topic coming from a number of scientific sources (e.g. manuscripts, metadata, files, etc.), a broader picture and opportunity to regain the valuable evidence in the investigation is academically provided. © 2018 IEEE.

关键词： Smartphones

Low-cost open-source voltage and current monitor for gas metal arc weld 3D printing

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Rivista Italiana della Saldatura 2017年第1期69卷 73-84页

作者： Pinar, A. Wijnen, B. Anzalone, G.C. Hanvens, T.C. Sanders, P.G. Pearce, J.M. Michigan Technological University Department of Electrical and Computer Engineering HoughtonMI United States Michigan Technological University Department of Materials Science and Engineering HoughtonMI United States Michigan Technological University Department of Electrical and Computer Engineering Department of Computer Science HoughtonMI United States Michigan Technological University Department of Electrical and Computer Engineering Department of Materials Science and Engineering HoughtonMI United States

Arduino open-source microcontrollers are well known in sensor applications for scientific equipment and for controlling RepRap 3D printers. Recently low-cost open-source gas metal arc weld (GMAW) RepRap 3D printers have been developed. The entry-level welders used have minimal controls and therefore lack any real-time measurement of welder voltage or current. The preliminary work on process optimization of GMAW 3D printers requires a low-cost sensor and data logger system to measure welder current and voltage. This paper reports on the development of a low-cost open-source power measurement sensor system based on Arduino architecture. The sensor system was designed, built, and tested with two entry-level MIG welders. The full bill of materials and open source designs are provided. Voltage and current were measured while making stepwise adjustments to the manual voltage setting on the welder. Three conditions were tested while welding with steel and aluminum wire on steel substrates to assess the role of electrode material, shield gas, and welding velocity. The results showed that the open source sensor circuit performed as designed and could be constructed for Copyright © IIW 2016: all rights reserved.

关键词： 3D printers

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

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Physical Review X 2019年第4期9卷 041027-041027页

作者： Jared M. Johnson Zhen Chen Joel B. Varley Christine M. Jackson Esmat Farzana Zeng Zhang Aaron R. Arehart Hsien-Lien Huang Arda Genc Steven A. Ringel Chris G. Van de Walle David A. Muller Jinwoo Hwang Department of Materials Science and Engineering The Ohio State University Columbus Ohio 43210 USA School of Applied and Engineering Physics Cornell University Ithaca New York 14853 USA Lawrence Livermore National Laboratory Livermore California 94550 USA Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio 43210 USA Thermo Fisher Scientific Hillsboro Oregon 97124 USA Materials Department University of California Santa Barbara California 93106 USA Kavli Institute at Cornell for Nanoscale Science Cornell University Ithaca New York 14853 USA

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic-scale structure of β−Ga2O3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy-interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in β−Ga2O3. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn doping through increased vacancy concentration. These findings provide new insight on this emerging material’s unique response to the incorporation of impurities that can critically influence their properties.

关键词： Dopants Interstitials Point defects Vacancies

Superconductivity of platinum hydride

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Physical Review B 2019年第14期99卷 144511-144511页

作者： Takahiro Matsuoka Masahiro Hishida Keiji Kuno Naohisa Hirao Yasuo Ohishi Shigeo Sasaki Kazushi Takahama Katsuya Shimizu Department of Electrical Electronic and Computer Engineering Faculty of Engineering Gifu University Gifu 501-1193 Japan Department of Materials Science and Technology Gifu University Gifu 501-1193 Japan Environmental and Renewable Energy Systems Division Gifu University Gifu 501-1193 Japan Japan Synchrotron Radiation Research Institute (JASRI) Hyogo 679-5198 Japan Center for Science and Technology under Extreme Conditions Graduate School of Engineering Science Osaka University Osaka 560-8531 Japan

We report the ac magnetic susceptibility, electrical resistance, and x-ray diffraction measurements of PtHx(x≃1) in diamond anvil cells, that reveal the superconducting transition. At 30 GPa, when PtHx is in a P63/mmc structure, PtHx exhibits the superconducting transition at 7 K. Remarkably, the observed Tc is higher than that of powdered Pt by more than three orders of magnitude. It is suggested that the noble metals in the periodic table of elements possibly form a region where hydrides have higher Tc than elements.

关键词： Pressure effects Superconducting phase transition Hydrides Low-temperature superconductors AC susceptibility measurements Resistivity measurements X-ray powder diffraction

Transforming heat transfer with thermal metamaterials and devices

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arXiv 2020年

作者： Li, Ying Li, Wei Han, Tiancheng Zheng, Xu Li, Jiaxin Li, Baowen Fan, Shanhui Qiu, Cheng-Wei Department of Electrical and Computer Engineering National University of Singapore Singapore117583 Singapore Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China ZJU-Hangzhou Global Science and Technology Innovation Center Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Zhejiang University Hangzhou310027 China Department of Electrical Engineering Ginzton Laboratory Stanford University StanfordCA94305 United States National Engineering Research Center of Electromagnetic Radiation Control Materials State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Department of Physics University of Colorado BoulderCO80309 United States School of Mechatronics Engineering Harbin Institute of Technology Harbin150001 China Paul M. Rady Department of Mechanical Engineering University of Colorado BoulderCO80309 United States

| The demand for sophisticated tools and approaches in heat management and control has triggered fast development of emerging fields including conductive thermal metamaterials, nanophononics, far-field and near-field radiative thermal management, etc. In this review, we cast a unified perspective on the control of heat transfer, based on which the related studies can be considered as complementary paradigms toward manipulating physical parameters and realizing unprecedented phenomena in heat transfer using artificial structures, such as thermal conductivity in heat conduction, thermal emissivity in radiation, and properties related to multi-physical effects. The review is divided into three parts that focus on the three main categories of heat flow control, respectively. Thermal conduction and radiation are emphasized in the first and second parts at both macro- and micro-scale. The third part discusses the efforts to actively introduce heat sources or tune the material parameters with multi-physical effects in both conduction and radiation, including works using thermal convection. We conclude the review with challenges in this research topic and new possibilities about topological thermal effects, heat waves, and quantum thermal effects. Copyright © 2020, The Authors. All rights reserved.

关键词： Metamaterials

Correlator convolutional neural networks: an interpretable architecture for image-like quantum matter data

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arXiv 2020年

作者： Miles, Cole Bohrdt, Annabelle Wu, Ruihan Chiu, Christie Xu, Muqing Ji, Geoffrey Greiner, Markus Weinberger, Kilian Q. Demler, Eugene Kim, Eun-Ah Department of Physics Cornell University IthacaNY14853 United States Department of Physics Harvard University CambridgeMA02138 United States Department of Physics Institute for Advanced Study India Technical University of Munich Garching85748 Germany München80799 Germany Department of Computer Science Cornell University IthacaNY14853 United States Department of Electrical Engineering Princeton University PrincetonNJ08540 United States Princeton Center for Complex Materials Princeton University PrincetonNJ08540 United States

Machine learning models are a powerful theoretical tool for analyzing data from quantum simulators, in which results of experiments are sets of snapshots of many-body states. Recently, they have been successfully applied to distinguish between snapshots that can not be identified using traditional one and two point correlation functions. Thus far, the complexity of these models has inhibited new physical insights from this approach. Here, using a novel set of nonlinearities we develop a network architecture that discovers features in the data which are directly interpretable in terms of physical observables. In particular, our network can be understood as uncovering high-order correlators which significantly differ between the data studied. We demonstrate this new architecture on sets of simulated snapshots produced by two candidate theories approximating the doped Fermi-Hubbard model, which is realized in state-of-the art quantum gas microscopy experiments. From the trained networks, we uncover that the key distinguishing features are fourth-order spin-charge correlators, providing a means to compare experimental data to theoretical predictions. Our approach lends itself well to the construction of simple, end-to-end interpretable architectures and is applicable to arbitrary lattice data, thus paving the way for new physical insights from machine learning studies of experimental as well as numerical data. Copyright © 2020, The Authors. All rights reserved.

关键词： Correlators

Two-dimensional Ga2O3 glass: a large scale passivation and protection material for monolayer WS2

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arXiv 2020年

作者： Wurdack, Matthias Yun, Tinghe Estrecho, Eliezer Syed, Nitu Bhattacharyya, Semonti Pieczarka, Maciej Zavabeti, Ali Chen, Shao-Yu Haas, Benedikt Müller, Johannes Bao, Qiaoliang Schneider, Christian Lu, Yuerui Fuhrer, Michael S. Truscott, Andrew G. Daeneke, Torben Ostrovskaya, Elena A. ARC Centre of Excellence in Future Low-Energy Electronics Technologies Nonlinear Physics Centre Research School of Physics Australian National University CanberraACT2601 Australia Department of Materials Science and Engineering Monash University Clayton Australia Department of Chemical and Environmental Engineering RMIT Melbourne Australia School of Physics and Astronomy Monash University Clayton Australia Department of Chemical Engineering University of Melbourne ParkvilleVIC3010 Australia Institut fur Physik & IRIS Adlershof Humboldt-Universität zu Berlin BerlinD-10099 Germany Institut of Physics Carl von Ossietzky University of Oldenburg Ammerländer Heerstrasse 114-118 Oldenburg26126 Germany Research School of Electrical Energy and Materials Engineering College of Engineering and Computer Science Australian National University CanberraACT2601 Australia Laser Physics Centre Research School of Physics Australian National University CanberraACT2601 Australia

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin Ga2O3 glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga2O3 capping of commercial grade WS2 monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make Ga2O3 highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures. Copyright © 2020, The Authors. All rights reserved.

关键词： Monolayers

The joint automated repository for various integrated simulations (JARVIS) for data-driven materials design

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arXiv 2020年

作者： Choudhary, Kamal Garrity, Kevin F. Reid, Andrew C.E. DeCost, Brian Biacchi, Adam J. Hight Walker, Angela R. Trautt, Zachary Hattrick-Simpers, Jason Kusne, A. Gilad Centrone, Andrea Davydov, Albert Jiang, Jie Pachter, Ruth Cheon, Gowoon Reed, Evan Agrawal, Ankit Qian, Xiaofeng Sharma, Vinit Zhuang, Houlong Kalinin, Sergei V. Sumpter, Bobby G. Pilania, Ghanshyam Acar, Pinar Mandal, Subhasish Haule, Kristjan Vanderbilt, David Rabe, Karin Tavazza, Francesca Materials Measurement Laboratory National Institute of Standards and Technology GaithersburgMD20899 United States Theiss Research San diegoCA92037 United States Department of Chemistry and Biochemistry University of Maryland College ParkMD20742 United States Physical Measurement Laboratory National Institute of Standards and Technology GaithersburgMD20899 United States Materials and Manufacturing Directorate Air Force Research Laboratory Wright–Patterson Air Force Base OH45433 United States Department of Materials Science and Engineering Stanford University StanfordCA94305 United States Department of Electrical and Computer Engineering Northwestern University EvanstonIL60208 United States Department of Materials Science and Engineering Texas A&M University TX77843 United States Joint Institute for Computational Sciences University of Tennessee KnoxvilleTN37996 United States National Institute for Computational Sciences Oak Ridge National Laboratory TN37831 United States School for Engineering of Matter Transport & Energy Arizona state university AZ85287 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory TN37831 United States Materials Science and Technology Division Los Alamos National Lab Los AlamosNM87545 United States Department of Mechanical Engineering Virginia Tech BlacksburgVA24061 United States Department of Physics and Astronomy Rutgers University PiscatawayNJ08901 United States

The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the materials Genome Initiative (MGI) principles of developing open-access databases and tools to reduce the cost and development time of materials discovery, optimization, and deployment. The major features of JARVIS are: JARVIS-DFT, JARVIS-FF, JARVIS-ML, and JARVIS-Tools. To date, JARVIS consists of ≈ 40,000 materials and ≈ 1 million calculated properties in JARVIS-DFT, ≈ 1,500 materials and ≈ 110 force-fields in JARVIS-FF, and ≈ 25 ML models for material-property predictions in JARVIS-ML, all of which are continuously expanding. JARVIS-Tools provides scripts and workflows for running and analyzing various simulations. We compare our computational data to experiments or high-fidelity computational methods wherever applicable to evaluate error/uncertainty in predictions. In addition to the existing workflows, the infrastructure can support a wide variety of other technologically important applications as part of the data-driven materials design paradigm. The JARVIS datasets and tools are publicly available at the website: https://*** . © 2020, CC BY.

关键词： Density functional theory