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Publisher’s Note: “Glass formation in amorphous ZnO films revealed by chip calorimetry” [J. Appl. Phys 127, 115105 (2020)]

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Journal of Applied Physics 2020年第14期128卷

作者： Andre Zeumault 1Department of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30318 USA 2School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta Georgia 30318 USA 3Department of Electrical Engineering and Computer Science The University of Tennessee Knoxville Tennessee 37996 USA 4Department of Materials Science and Engineering The University of Tennessee Knoxville Tennessee 37996 USA

This article was originally published on 18 March 2020 without a complete list of affiliations. The affiliations are correct as they appear above.

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Direct detection of multiple backward volume modes in yttrium iron garnet at micron scale wavelengths

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Physical Review B 2019年第1期99卷 014435-014435页

作者： Jinho Lim Wonbae Bang Jonathan Trossman Andreas Kreisel Matthias Benjamin Jungfleisch Axel Hoffmann C. C. Tsai John B. Ketterson Department of Physics and Astronomy Northwestern University Evanston Illinois 60208 USA Materials Science Division Argonne National Laboratory Argonne Illinois 60439 USA Institut für Theoretische Physik Universität Leipzig D-04103 Leipzig Germany Department of Physics and Astronomy University of Delaware Newark Delaware 19716 USA Department of Engineering & Management of Advanced Technology Chang Jung Christian University Tainan 71101 Taiwan Department of Electrical and Computer Engineering Northwestern University Evanston Illinois 60515 USA

Using a set of wave-vector-specific multielement antennas, we have characterized the dispersion of spin waves in an yttrium iron garnet film at submicron lengths and resolved the dispersion relations of multiple backward volume modes, particularly in the region of their minima. The techniques developed now facilitate the characterization of spin waves at length scales limited only by available lithography and at a spectral resolution that generally exceeds that of Brillouin scattering. The data obtained are in excellent agreement with theoretical predictions based on a model Hamiltonian.

关键词： Dipolar interaction Exchange interaction Spin waves Monolayer films Ferromagnetic resonance Heisenberg model Holstein-Primakoff method Lithography

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Long-distance spin transport through a graphene quantum Hall antiferromagnet (vol 14, pg 907, 2018)

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NATURE PHYSICS 2018年第9期14卷 967-967页

作者： Stepanov, Petr Che, Shi Shcherbakov, Dmitry Yang, Jiawei Chen, Ruoyu Thilahar, Kevin Voigt, Greyson Bockrath, Marc W. Smirnov, Dmitry Watanabe, Kenji Taniguchi, Takashi Lake, Roger K. Barlas, Yafis MacDonald, Allan H. Lau, Chun Ning Department of Physics and Astronomy University of California Riverside CA USA Department of Physics Ohio State University Columbus OH USA Department of Physics Ohio State University Columbus OH USA Department of Physics and Astronomy University of California Riverside CA USA National High Magnetic Field Laboratory Tallahassee FL USA National Institute for Materials Science Tsukuba Japan Department of Electrical and Computer Engineering University of California Riverside CA USA Department of Physics and Astronomy University of California Riverside CA USA Department of Electrical and Computer Engineering University of California Riverside CA USA Department of Physics University of Texas at Austin Austin TX USA

Because of their ultrafast intrinsic dynamics and robustness against stray fields, antiferromagnetic insulators1–3 are promising candidates for spintronic components. Therefore, long-distance, low-dissipation spin transport and electrical manipulation of antiferromagnetic order are key research goals in antiferromagnetic spintronics. Here, we report experimental evidence of robust spin transport through an antiferromagnetic insulator, in our case the gate-controlled state that appears in charge-neutral graphene in a magnetic field4–6. Utilizing quantum Hall edge states as spin-dependent injectors and detectors, we observe large, non-local electrical signals across charge-neutral channels that are up to 5 μm long. The dependence of the signal on magnetic field, temperature and filling factor is consistent with spin superfluidity1,2,4,7–10 as the spin-transport mechanism. This work demonstrates the utility of graphene in the quantum Hall regime as a powerful model system for fundamental studies in antiferromagnetic spintronics.

关键词： Quantum Hall Spintronics Two-dimensional materials

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Design and fabrication of thin-film silicon-based selective solar absorbers

Design and fabrication of thin-film silicon-based selective ...

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Optics for Solar Energy, OSE 2018

作者： Zhou, Zhiguang Tian, Hao Guler, Urcan Shalaev, Vladimir Hymel, Thomas Cui, Yi Bermel, Peter School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Department of Materials Science and Engineering Stanford University Palo AltoCA94305 United States

The efficiency of solar absorbers at capturing heat can be improved dramatically using spectral selectivity. Applying this concept to thin-film silicon increases thermal transfer efficiencies over 60% at 595°C un... 详细信息

ISBN: (纸本)9781943580477

关键词： Thin films

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Hierarchical InGaN Nanowires for High-Efficiency Solar Water Splitting

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Microscopy and Microanalysis 2018年第S1期24卷 1670-1671页

作者： Jiseok Gim Reed Yalisove Sheng Chu Yongbum Park Srinivas Vanka Yichen Wang Yongjie Wang Yong-Ho Ra Hong Guo Ishiang Shih Department of Materials Science & Engineering University of Michigan Ann Arbor USA. Department of Electrical & Computer Engineering McGill University Montreal Canada. Department of Electrical Engineering & Computer Science University of Michigan Ann Arbor USA. Department of Physics McGill University Montreal Canada.

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Author Correction: Giant optical anisotropy in a quasi-one-dimensional crystal

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Nature Photonics 2021年 939页

作者： Shanyuan Niu Yucheng Zhou Thomas Orvis Huaixun Huyan Yang Liu Han Wang Jayakanth Ravichandran Graham Joe Jad Salman Mikhail A. Kats Huan Zhao Jiangbin Wu Stephen B. Cronin Krishnamurthy Mahalingam Brittany Urwin Brandon M. Howe Thomas E. Tiwald Matthew Mecklenburg Ralf Haiges David J. Singh Mork Family Department of Chemical Engineering and Materials Science University of Southern California Los Angeles CA USA Ming Hsieh Department of Electrical Engineering University of Southern California Los Angeles CA USA Department of Electrical and Computer Engineering University of Wisconsin–Madison Madison WI USA Materials and Manufacturing Directorate Air Force Research Laboratory Wright-Patterson AFB Dayton OH USA J. A. Woollam Co. Inc. Lincoln NE USA Center for Electron Microscopy and Microanalysis University of Southern California Los Angeles CA USA Loker Hydrocarbon Research Institute and Department of Chemistry University of Southern California Los Angeles CA USA Department of Physics and Astronomy University of Missouri Columbia MO USA

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Optical Computing on Silicon-on-Insulator-Based Photonic Integrated Circuits 12

Optical Computing on Silicon-on-Insulator-Based Photonic Int...

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2017 IEEE 12th International Conference on ASIC

作者： Zheng Zhao Zheng Wang Zhoufeng Ying Shounak Dhar Ray T.Chen David Z.Pan Department of Electrical and Computer Engineering University of Texas at Austin Department of Materials Science and Engineering University of Texas at Austin

ISBN: (纸本)9781509066261;9781509066254

The advancement of photonic integrated circuits(PICs)brings the possibility to accomplish on-chip optical interconnects and *** computing,as a promising alternative to traditional CMOS computing,has great potential advantages of ultra-high speed and lowpower in information processing and *** this paper,we survey the current research efforts on optical computing demonstrated on silicon-on-insulator-based *** advantages,limitations,and possible research directions for further investigation are discussed.

关键词： PIC Optical Computing on Silicon-on-Insulator-Based Photonic Integrated Circuits

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Statistically meaningful measure of domain-wall roughness in magnetic thin films

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Physical Review B 2020年第18期101卷 184431-184431页

作者： D. Jordán L. J. Albornoz J. Gorchon C. H. Lambert S. Salahuddin J. Bokor J. Curiale S. Bustingorry Instituto Balseiro Universidad Nacional de Cuyo - CNEA Centro Atómico Bariloche (R8402AGP) S. C. de Bariloche Río Negro Argentina Instituto de Nanociencia y Nanotecnología CNEA–CONICET Centro Atómico Bariloche (R8402AGP) S. C. de Bariloche Río Negro Argentina Université de Lorraine CNRS IJL F-54000 Nancy France Department of Electrical Engineering and Computer Science University of California Berkeley California 94720 USA Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA

Domain walls in magnetic thin films display a complex dynamical response when subject to an external drive. It is claimed that different dynamic regimes are correlated with the domain-wall roughness, i.e., with the fluctuations of domain-wall position due to the inherent disorder in the system. Therefore, key to understanding the dynamics of domain walls is to have a statistically meaningful measure of the domain-wall roughness. Here we present a thorough study of the roughness parameters, i.e., roughness exponent and roughness amplitude, for domain walls in a ferrimagnetic GdFeCo thin film in the creep regime. Histograms of roughness parameters are constructed with more than 40 independent realizations under the same experimental conditions, and the average values and standard deviations are compared in different conditions. We found that the most prominent feature of the obtained distributions is their large standard deviations, which is a signature of large fluctuations. We show that even if the roughness parameters for a particular domain wall are well known, these parameters are not necessarily representative of the underlying physics of the system. In the low field limit, within the creep regime of domain-wall motion, we found the average roughness exponent and roughness amplitude to be around 0.75 and 0.45 μm2, respectively. When an in-plane magnetic field is applied we observed that, even though the distributions are wide, changes in the mean values of roughness parameters can be identified; the roughness exponent decreasing to values around 0.72 while the roughness amplitude increases to 0.65 μm2. Our results call for a careful consideration of statistical averaging over different domains walls when reporting roughness exponents.

关键词： Domain walls Magnetic domains Magnetism Ferrimagnets Thin films Magneto-optical Kerr effect

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All-electrical Determination of Crystal Orientation in Anisotropic Two-Dimensional materials

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Physical Review Letters 2018年第8期120卷 086801-086801页

作者： Lintao Peng Spencer A. Wells Christopher R. Ryder Mark C. Hersam Matthew Grayson Applied Physics Graduate Program Northwestern University Evanston Illinois 60208 USA Department of Materials Science and Engineering Northwestern University Evanston Illinois 60208 USA Department of Electrical Engineering and Computer Science Northwestern University Evanston Illinois 60208 USA Department of Chemistry Northwestern University Evanston Illinois 60208 USA

The crystal orientation of an exfoliated black phosphorous flake is determined by purely electrical means. A sequence of three resistance measurements on an arbitrarily shaped flake with five contacts determines the three independent components of the anisotropic in-plane resistivity tensor, thereby revealing the crystal axes. The resistivity anisotropy ratio decreases linearly with increasing temperature T and carrier density reaching a maximum ratio of 3.0 at low temperatures and densities, while mobility indicates impurity scattering at low T and acoustic phonon scattering at high T.

关键词： Crystal orientation electrical conductivity Semiconductors Transport phenomena Multilayer thin films Phosphorene Transition metal dichalcogenides Resistivity measurements

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Control of single quantum emitters in bio-inspired aperiodic nano-photonic devices

arXiv

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arXiv 2020年

作者： Trojak, Oliver J. Gorsky, Sean Murray, Connor Sgrignuoli, Fabrizio Pinheiro, Felipe Arruda Park, Suk-In Song, Jin Dong Negro, Luca Dal Sapienza, Luca Department of Physics and Astronomy University of Southampton SouthamptonSO17 1BJ United Kingdom Department of Electrical & Computer Engineering Photonics Center Boston University 8 Saint Mary's St. BostonMA02215 United States Instituto de Fisica Universidade Federal do Rio de Janeiro Rio de Janeiro-RJ21941-972 Brazil Center for Opto-Electronic Materials and Devices Research Korea Institute of Science and Technology Seoul136-791 Korea Republic of Division of Material Science & Engineering Boston University 15 Saint Mary's St. BrooklineMA02446 United States Department of Physics Boston University 590 Commonwealth Ave. BostonMA02215 United States

Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and for the realisation of integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and, ultimately, the control of the spontaneous emission dynamics of single emitters, which is crucial for cavity quantum electrodynamics experiments and for the development of classical and quantum light sources. Here, we report on the demonstration of enhanced light-matter interaction and Purcell effects on a chip, based on bio-inspired aperiodic devices fabricated in silicon nitride and gallium arsenide. Internal light sources, namely optically-active defect centers in silicon nitride and indium arsenide single quantum dots, are used to image and characterize, by means of micro-photoluminescence spectroscopy, the individual optical modes confined by photonic membranes with Vogel-spiral geometry. By studying the statistics of the measured optical resonances, in partnership with rigorous multiple scattering theory, we observe log-normal distributions and report quality factors with values as high as 2201±443. Building on the strong light confinement achieved in this novel platform, we further investigate the coupling of single semiconductor quantum dots to the confined optical modes. Our results show cavity quantum electrodynamics effects providing strong modifications of the spontaneous emission decay of single optical transitions. In particular, thanks to the significant modification of the density of optical states demonstrated in Vogel-spiral photonic structures, we show control of the decay lifetime of single emitters with a dynamic range reaching 20. Our findings improve the understanding of the fundamental physical properties of light-emitting Vogel-spiral systems, show their application to quantum photonic devices, and form the basis for th

关键词： Quantum optics

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