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Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

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Physical Review B 2019年第11期100卷 115436-115436页

作者： V. Ryzhii T. Otsuji M. Ryzhii A. A. Dubinov V. Ya. Aleshkin V. E. Karasik M. S. Shur Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan Institute of Ultra High Frequency Semiconductor Electronics of RAS Moscow 117105 Russia Center for Photonics and Two-Dimensional Materials Moscow Institute of Physics Technology Dolgoprudny 141700 Russia Department of Computer Science and Engineering University of Aizu Aizu-Wakamatsu 965-8580 Japan Institute for Physics of Microstructures of RAS and Lobachevsky University of Nizhny Novgorod Nizhny Novgorod 60395 Russia Center for Photonics and Infrared Technology Bauman Moscow State Technical University Moscow 111005 Russia Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute Troy New York 12180 USA

We propose and evaluate the heterostructure based on the graphene layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (BL) (P+−PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electron-hole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The latter can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for new types of the THz sources.

关键词： Optical & microwave phenomena Plasmonics Plasmons Graphene Heterostructures

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Organic Semiconductors: Fast‐Response, Highly Air‐Stable, and Water‐Resistant Organic Photodetectors Based on a Single‐Crystal Pt Complex (Adv. Mater. 2/2020)

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Advanced materials 2020年第2期32卷

作者： Dharmaraj Periyanagounder Tzu‐Chiao Wei Ting‐You Li Chun‐Ho Lin Théo Piechota Gonçalves Hui‐Chun Fu Dung‐Sheng Tsai Jr‐Jian Ke Hung‐Wei Kuo Kuo‐Wei Huang Norman Lu Xiaosheng Fang Jr‐Hau He Computer Electrical and Mathematical Sciences and Engineering Division King Abdullah University of Science & Technology Thuwal 23955–6900 Saudi Arabia Department of Molecular Science and Engineering National Taipei University of Technology Taipei 106 Taiwan ROC KAUST Catalyst Centre Physical Science and Engineering Division King Abdullah University of Science & Technology Thuwal 23955–6900 Saudi Arabia Institute of Organic and Polymeric Materials National Taipei University of Technology Taipei 106 Taiwan ROC Department of Materials Science Fudan University Shanghai 200433 China Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 China

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MoSi2N4single-layer: A novel two-dimensional material with outstanding mechanical, thermal, electronic, optical, and photocatalytic properties

arXiv

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arXiv 2020年

作者： Bafekry, A. Faraji, M. Hoat, Do M. Fadlallah, M.M. Shahrokhi, M. Shojaei, F. Gogova, D. Ghergherehchi, M. Department of Physics University of Guilan Rasht41335-1914 Iran Department of Physics University of Antwerp Groenenborgerlaan 171 AntwerpB-2020 Belgium Micro and Nanotechnology Graduate Program TOBB University of Economics and Technology Sogutozu Caddesi No 43 Sogutozu Ankara06560 Turkey Computational Laboratory for Advanced Materials and Structures Advanced Institute of Materials Science Ton Duc Thang University Ho Chi Minh City Viet Nam Department of Physics Faculty of Science Benha University Benha13518 Egypt University Lyon ENS de Lyon CNRS Universit Claude Bernard Lyon 1 Laboratoire de Chimie UMR 5182 LyonF-69342 France Department of Chemistry Faculty of Sciences Persian Gulf University Bushehr75169 Iran Department of Physics University of Oslo P.O. Box 1048 Blindern Oslo Norway College of Electronic and Electrical Engineering Sungkyun Kwan University Suwon Korea Republic of

Very recently, the two-dimensional (2D) form of MoSi2N4has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal, electronic, optical and photocatalytic properties using hybrid density functional theory (HSE06-DFT). Phonon band dispersion calculations reveal the dynamical stability of MoSi2N4monolayer structure. Furthermore, the mechanical study confirms the stability of MoSi2N4monolayer. As compared to the corresponding value of graphene, we find the Young's modulus decreases by ∼ 30% while the Poisson's ratio increases by ∼ 30%. In addition, its work function is very similar to that of phosphorene and MoS2 monolayers. The electronic structure investigation shows the MoSi2N4monolayer is an indirect bandgap semiconductor. We have determined the bandgap using the HSE06 (GGA) is 2.35 (1.79) eV, which is an overestimated (underestimated) value of the experimental bandgap (1.99 eV). The thermoelectric study shows a good thermoelectric performance of the MoSi2N4monolayer with a figure of merit slightly larger than unity at high temperatures. The optical analysis using the RPA method constructed over HSE06 shows that the first absorption peak of the MoSi2N4monolayer for in-plane polarization is located in the visible range of spectrum, i.e. it is a promising candidate for advancing optoelectronic nanodevices. The photocatalytic study indicates the MoSi2N4monloayer can be a promising photocatalyst for water splitting as well as and CO2 reduction. In summary, the fascinating MoSi2N4monloayer is a promising 2D material in many applications due to its unique physical properties. Copyright © 2020, The Authors. All rights reserved.

关键词： Molybdenum compounds

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Ultrahigh-pressure form of SiO2 glass with dense pyrite-type crystalline homology

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Physical Review B 2019年第4期99卷 045153-045153页

作者： M. Murakami S. Kohara N. Kitamura J. Akola H. Inoue A. Hirata Y. Hiraoka Y. Onodera I. Obayashi J. Kalikka N. Hirao T. Musso A. S. Foster Y. Idemoto O. Sakata Y. Ohishi Department of Earth Sciences ETH Zürich Zürich 8092 Switzerland Department of Earth and Planetary Materials Science Tohoku University Sendai 980-8578 Japan Research Center for Advanced Measurement and Characterization National Institute for Materials Science (NIMS) Hyogo 679-5148 Japan Center for Materials research by Information Integration (CMI2) Research and Services Division of Materials Data and Integrated System (MaDIS) NIMS Ibaraki 305-0047 Japan Research and Utilization Division Japan Synchrotron Radiation Research Institute Hyogo 679-5198 Japan School of Materials Science Japan Advanced Institute of Science and Technology Ishikawa 923-1211 Japan PRESTO Japan Science and Technology Agency Tokyo 102-0076 Japan Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science Chiba 278-8510 Japan Department of Physics Tampere University of Technology FI-33101 Tampere Finland Department of Physics Norwegian University of Science and Technology NO-7481 Trondheim Norway Institute of Industrial Science The University of Tokyo Tokyo 153-8505 Japan Graduate School of Fundamental Science and Engineering Waseda University Tokyo 169-8555 Japan Kagami Memorial Research Institute for Materials Science and Technology Waseda University Tokyo 169-0051 Japan Mathematics for Advanced Materials-OIL AIST Sendai 980-8577 Japan WPI Advanced Institute for Materials Research Tohoku University Sendai 980-8577 Japan Kyoto University Institute for Advanced Study Kyoto University Kyoto 606-8501 Japan Center for Advanced Intelligence Project RIKEN Tokyo 103-0027 Japan Institute for Integrated Radiation and Nuclear Science Kyoto University Osaka 590-0494 Japan Department of Applied Physics Aalto University FI-00076 Aalto Finland Division of Electrical Engineering and Computer Science Graduate School of Natural Science and Technology Kanazawa University Kanazawa 920-1192 Japan

High-pressure synthesis of denser glass has been a longstanding interest in condensed-matter physics and materials science because of its potentially broad industrial application. Nevertheless, understanding its nature under extreme pressures has yet to be clarified due to experimental and theoretical challenges. Here we reveal the formation of OSi4 tetraclusters associated with that of SiO7 polyhedra in SiO2 glass under ultrahigh pressures to 200 gigapascal confirmed both experimentally and theoretically. Persistent homology analyses with molecular dynamics simulations found increased packing fraction of atoms whose topological diagram at ultrahigh pressures is similar to a pyrite-type crystalline phase, although the formation of tetraclusters is prohibited in the crystalline phase. This critical difference would be caused by the potential structural tolerance in the glass for distortion of oxygen clusters. Furthermore, an expanded electronic band gap demonstrates that chemical bonds survive at ultrahigh pressure. This opens up the synthesis of topologically disordered dense oxide glasses.

关键词： Chemical bonding Density of states Electronic structure Phase transitions Pressure effects Specific phase transitions Structural properties Topological phase transition Topological phases of matter Density functional theory Molecular dynamics Wannier function methods X-ray diffraction X-ray powder diffraction

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Experimental demonstration of integrated magneto-electric and spin-orbit building blocks implementing energy-efficient logic

Experimental demonstration of integrated magneto-electric an...

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International Electron Devices Meeting (IEDM)

作者： Chia-Ching Lin Tanay Gosavi Dmitri Nikonov Yen-Lin Huang Bhagwati Prasad WonYoung Choi Van Tuong Pham Inge Groen Jun-Yang Chen Mahendra D. C. Huichu Liu Kaan Oguz Emily S. Walker John Plombon Benjamin Buford Carl H. Naylor Jian-Ping Wang Felix Casanova Ramamoorthy Ramesh Ian A. Young Components Research Intel Corporation Hillsboro OR USA Department of Materials Science and Engineering and Department of Physics University of California Berkeley CA USA CIC nanoGUNE Donostia-San Sebastián Basque Country Spain Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA Intel Labs Intel Corporation Santa Clara CA USA CQN Intel Corporation Hillsboro OR USA

600 mV magneto-electric switching in 30 nm La-doped BiFeO 3 multiferroic oxide and a proof of concept 7 μV spin-orbit signal output in Pt / CoFe local spin injection device with 100 μA supply current were experimentally demonstrated at room temperature for the 1 st time. Also demonstrated was a path towards 70 mV spin orbit output using Bi 2 Se 3 in a local spin injection device. These are key accomplishments for WRITE and READ building blocks, respectively, toward realization of a magneto-electric spin-orbit (MESO) energy-efficient logic device. Moreover, the 1 st generation of a MESO logic device with a functional READ unit is demonstrated.

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Concentric Micromirror Array for High-Speed Optical Dynamic Focusing

Concentric Micromirror Array for High-Speed Optical Dynamic ...

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IEEE/LEOS International Conference on Optical MEMS

作者： Nathan Tessema Ersumo Cem Yalcin Nicolas Pégard Laura Waller Daniel Lopez Rikky Muller San Francisco Graduate Program in Bioengineering University of California Berkeley - University of California USA Departement of Electrical Engineering & Computer Sciences University of California Berkeley USA Department of Applied Physical Sciences University of North Carolina at Chapel Hill Chapel Hill USA Center for Nanoscale Materials Argonne National Laboratory Argonne USA

Optical dynamic focusing has emerged as a speed, complexity and efficiency bottleneck across various applications, which include scanning multi-photon microscopy in biology, maskless lithography and micromachining in material processing, and wavefront correction. Here, we present a 32-ring 23,852-pixel concentric micromirror array capable of performing dynamic focusing for wavelengths of up to 1040 nm with a response rate of up to 8.75 kHz, 30 V drive and a focusing full-width-half-maximum to range ratio of 4.8%.

关键词： Optimized production technology High-speed optical techniques Micromechanical devices Nanophotonics Micromirrors Focusing

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Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020)

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Advanced materials 2020年第43期32卷

作者： Junyoung Kwon June‐Chul Shin Huije Ryu Jae Yoon Lee Dongjea Seo Kenji Watanabe Takashi Taniguchi Young Duck Kim James Hone Chul‐Ho Lee Gwan‐Hyoung Lee Department of Materials Science and Engineering Yonsei University Seoul 03722 Korea Department of Materials Science and Engineering Seoul National University Seoul 08826 Korea KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Korea Department of Electrical and Computer Engineering University of Minnesota Minneapolis Minnesota 55455 USA Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan Department of Physics Kyung Hee University Seoul 02447 Korea Department of Mechanical Engineering Columbia University New York NY 10027 USA Research Institute of Advanced Materials (RIAM) Institute of Engineering Research Institute of Applied Physics Seoul National University Seoul 08826 Korea

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Universal Printing Method: Polydispersity‐Driven Printing of Conformal Solid Metal Traces on Non‐Adhering Biological Surfaces (Adv. Mater. Interfaces 22/2020)

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Advanced materials Interfaces 2020年第22期7卷

作者： Andrew Martin Chuanshen Du Alana M. Pauls Thomas Ward Martin Thuo Department of Materials Science and Engineering Iowa State University Ames IA 50011 USA Department of Aerospace Engineering Iowa State University Ames IA 50011 USA Micro‐Electronics Research Centre Ames IA 50011 USA Department of Electrical and Computer Engineering Iowa State University Ames IA 50011 USA

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New materials and Processes Developed for Cranioplasty

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IOP Conference Series: materials science and engineering 2020年第1期877卷

作者： I M Mates A Semenescu S I Dumitrescu R Vidu University POLITEHNICA of Bucharest Faculty of Materials Science and Engineering Splaiul Independentei nr.313 Bucharest Romania Central University Emergency Military Hospital Bucharest Romania University of California Davis Department of Electrical and Computer Engineering Davis CA 95616 USA

Traumatic brain injury is the leader in the ranking of mortality and invalidity. The surgical repair of a defect of the skull by cranioplasty has been practiced since ancient times, when materials of non-biological origin were used for this purpose. New materials and processes are sought to improve osseintegration of implants. Like any surgical procedure, cranioplasty involves complications that may be related to the surgical technique and/or to the patient's tolerance to the material used. This work described a biocompatible medical device that include two supported meshes for providing mechanical strength and osseointegration properties of the implant, and a multiplayer porous material in between them that is loaded with the required bioactive antibacterial compound to promote a controlled and sustained release of the pharmaceutical agents at the site of surgical intervention. To increase osseointegration, meshes are designed with an open structure and coated with biocompatible materials such as hydroxyapatite. The composition gradient in the multilayer porous material is attained by loading successive layers of porous material with different amounts of bioactive materials and then stacking them to create a gradient of composition across the porous material.

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Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy

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Microscopy and Microanalysis 2018年第S1期24卷 1056-1057页

作者： T. J. Grassman K. Galiano J. I. Deitz S. D. Carnevale D. A. Gleason Z. Zhang S. A. Ringel A. R. Arehart J. P. Pelz Department of Materials Science and Engineering The Ohio State University ColumbusOH USA Department of Electrical and Computer Engineering The Ohio State University ColumbusOH USA Department of Physics The Ohio State University ColumbusOH USA

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