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Self-aligned van der waals heterojunction diodes and transistors

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arXiv 2018年

作者： Sangwan, Vinod K. Beck, Megan E. Henning, Alex Luo, Jiajia Bergeron, Hadallia Kang, Junmo Balla, Itamar Inbar, Hadass Lauhon, Lincoln J. Hersam, Mark C. Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Northwestern University EvanstonIL60208 United States Department of Electrical Engineering and Computer Science Northwestern University EvanstonIL60208 United States

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of anti-ambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated anti-ambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. Copyright © 2018, The Authors. All rights reserved.

关键词： Heterojunctions

Experimental Demonstration of High-Rate Measurement-Device-Independent Quantum Key Distribution over Asymmetric Channels

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Physical Review Letters 2019年第16期122卷 160501-160501页

作者： Hui Liu Wenyuan Wang Kejin Wei Xiao-Tian Fang Li Li Nai-Le Liu Hao Liang Si-Jie Zhang Weijun Zhang Hao Li Lixing You Zhen Wang Hoi-Kwong Lo Teng-Yun Chen Feihu Xu Jian-Wei Pan Shanghai Branch Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics University of Science and Technology of China Shanghai 201315 China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Shanghai 201315 People’s Republic of China Centre for Quantum Information and Quantum Control (CQIQC) Department of Electrical & Computer Engineering and Department of Physics University of Toronto Toronto Ontario M5S 3G4 Canada State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Measurement-device-independent quantum key distribution (MDI-QKD) can eliminate all detector side channels and it is practical with current technology. Previous implementations of MDI-QKD all used two symmetric channels with similar losses. However, the secret key rate is severely limited when different channels have different losses. Here we report the results of the first high-rate MDI-QKD experiment over asymmetric channels. By using the recent 7-intensity optimization approach, we demonstrate>10×higher key rate than the previous best-known protocols for MDI-QKD in the situation of large channel asymmetry, and extend the secure transmission distance by more than 20–50 km in standard telecom fiber. The results have moved MDI-QKD towards widespread applications in practical network settings, where the channel losses are asymmetric and user nodes could be dynamically added or deleted.

关键词： Quantum cryptography Quantum networks

Gate-tunable memristors from monolayer MoS2

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arXiv 2018年

作者： Sangwan, Vinod K. Lee, Hong-Sub Hersam, Mark C. Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Northwestern University EvanstonIL60208 United States Department of Electrical Engineering and Computer Science Northwestern University EvanstonIL60208 United States

We report here gate-tunable memristors based on monolayer MoS2grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2films with grain sizes of 3-5 μm. The device characteristics show switching ratios up to ∼500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures. Copyright © 2018, The Authors. All rights reserved.

关键词： Molybdenum compounds

Combination of Measurements of the Top Quark Mass from Data Collected by the ATLAS and CMS Experiments at s=7 and 8 TeV

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Physical Review Letters 2024年第26期132卷 261902-261902页

作者： A. Hayrapetyan A. Tumasyan W. Adam J. W. Andrejkovic T. Bergauer S. Chatterjee K. Damanakis M. Dragicevic P. S. Hussain M. Jeitler N. Krammer A. Li D. Liko I. Mikulec J. Schieck R. Schöfbeck D. Schwarz M. Sonawane S. Templ W. Waltenberger C.-E. Wulz M. R. Darwish T. Janssen P. Van Mechelen E. S. Bols J. D’Hondt S. Dansana A. De Moor M. Delcourt H. El Faham S. Lowette I. Makarenko D. Müller A. R. Sahasransu S. Tavernier M. Tytgat S. Van Putte D. Vannerom B. Clerbaux G. De Lentdecker L. Favart D. Hohov J. Jaramillo A. Khalilzadeh K. Lee M. Mahdavikhorrami A. Malara S. Paredes L. Pétré N. Postiau L. Thomas M. Vanden Bemden C. Vander Velde P. Vanlaer M. De Coen D. Dobur Y. Hong J. Knolle L. Lambrecht G. Mestdach C. Rendón A. Samalan K. Skovpen N. Van Den Bossche J. van der Linden L. Wezenbeek A. Benecke G. Bruno C. Caputo C. Delaere I. S. Donertas A. Giammanco K. Jaffel Sa. Jain V. Lemaitre J. Lidrych P. Mastrapasqua K. Mondal T. T. Tran S. Wertz G. A. Alves E. Coelho C. Hensel T. Menezes De Oliveira A. Moraes P. Rebello Teles M. Soeiro W. L. Aldá Júnior M. Alves Gallo Pereira M. Barroso Ferreira Filho H. Brandao Malbouisson W. Carvalho J. Chinellato E. M. Da Costa G. G. Da Silveira D. De Jesus Damiao S. Fonseca De Souza R. Gomes De Souza J. Martins C. Mora Herrera K. Mota Amarilo L. Mundim H. Nogima A. Santoro A. Sznajder M. Thiel A. Vilela Pereira C. A. Bernardes L. Calligaris T. R. Fernandez Perez Tomei E. M. Gregores P. G. Mercadante S. F. Novaes B. Orzari Sandra S. Padula A. Aleksandrov G. Antchev R. Hadjiiska P. Iaydjiev M. Misheva M. Shopova G. Sultanov A. Dimitrov L. Litov B. Pavlov P. Petkov A. Petrov E. Shumka S. Keshri S. Thakur T. Cheng Q. Guo T. Javaid L. Yuan Z. Hu J. Liu K. Yi G. M. Chen H. S. Chen M. Chen F. Iemmi C. H. Jiang A. Kapoor H. Liao Z.-A. Liu R. Sharma J. N. Song J. Tao C. Wang J. Wang Z. Wang H. Zhang A. Agapitos Y. Ban A. Levin C. Li Q. Li Y. Mao S. J. Qian X. Sun D. Wang H. Yang L. Zhang C. Zhou Z. You N. Lu G. Bauer X. Gao D. Leggat H. Okawa Y. Zhang Z. Lin C. Lu M. Xiao C. Avila D. A. Yerevan Physics Institute Yerevan Armenia Institut für Hochenergiephysik Vienna Austria Indian Institute of Technology Madras Madras India APC Université Paris Cité CNRS/IN2P3 Paris France Universiteit Antwerpen Antwerpen Belgium Vrije Universiteit Brussel Brussel Belgium Université Libre de Bruxelles Bruxelles Belgium Korea University Seoul Korea Ghent University Ghent Belgium Université Catholique de Louvain Louvain-la-Neuve Belgium Centro Brasileiro de Pesquisas Fisicas Rio de Janeiro Brazil Universidade do Estado do Rio de Janeiro Rio de Janeiro Brazil Universidade Estadual Paulista Universidade Federal do ABC São Paulo Brazil Institute for Nuclear Research and Nuclear Energy Bulgarian Academy of Sciences Sofia Bulgaria University of Sofia Sofia Bulgaria IJCLab Université Paris-Saclay CNRS/IN2P3 91405 Orsay France Instituto De Alta Investigación Universidad de Tarapacá Casilla 7 D Arica Chile Beihang University Beijing China Department of Physics Tsinghua University Beijing China Institute of High Energy Physics Beijing China Department of Physics Oxford University Oxford United Kingdom School of Physics and Astronomy Shanghai Jiao Tong University Key Laboratory for Particle Astrophysics and Cosmology (MOE) SKLPPC Shanghai China Department of Physics Chinese University of Hong Kong Shatin N.T. Hong Kong China Department of Physics University of Michigan Ann Arbor Michigan USA State Key Laboratory of Nuclear Physics and Technology Peking University Beijing China Department of Modern Physics and State Key Laboratory of Particle Detection and Electronics University of Science and Technology of China Hefei China Department of Physics Nanjing University Nanjing China Sun Yat-Sen University Guangzhou China University of Science and Technology of China Hefei China Nanjing Normal University Nanjing China Institute of Modern Physics and Key Laboratory of Nuclear Physics and Ion-beam Application (MOE)—Fudan University Shanghai China Zhe

A combination of fifteen top quark mass measurements performed by the ATLAS and CMS experiments at the LHC is presented. The datasets used correspond to an integrated luminosity of up to 5 and 20 fb−1 of proton-proton collisions at center-of-mass energies of 7 and 8 TeV, respectively. The combination includes measurements in top quark pair events that exploit both the semileptonic and hadronic decays of the top quark, and a measurement using events enriched in single top quark production via the electroweak t channel. The combination accounts for the correlations between measurements and achieves an improvement in the total uncertainty of 31% relative to the most precise input measurement. The result is mt=172.52±0.14(stat)±0.30(syst) GeV, with a total uncertainty of 0.33 GeV.

关键词： Top quark Hadron colliders

Objective comparison of methods to decode anomalous diffusion

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arXiv 2021年

作者： Muñoz-Gil, Gorka Volpe, Giovanni Garcia-March, Miguel Angel Aghion, Erez Argun, Aykut Hong, Chang Beom Bland, Tom Bo, Stefano Conejero, J. Alberto Firbas, Nicolás Orts, Òscar Garibo Gentili, Alessia Huang, Zihan Jeon, Jae-Hyung Kabbech, Hélène Kim, Yeongjin Kowalek, Patrycja Krapf, Diego Loch-Olszewska, Hanna Lomholt, Michael A. Masson, Jean-Baptiste Meyer, Philipp G. Park, Seongyu Requena, Borja Smal, Ihor Song, Taegeun Szwabinski, Janusz Thapa, Samudrajit Verdier, Hippolyte Volpe, Giorgio Widera, Arthur Lewenstein, MacIej Metzler, Ralf Anzo, Carlo 08860 Spain Department of Physics University of Gothenburg Origovägen 6B GothenburgSE-41296 Sweden Instituto Universitario de Matemática Pura y Aplicada Universitat Politècnica de València Spain Max Planck Institute for the Physics of Complex Systems Nöthnitzer Straße 38 DresdenDE-01187 Germany Department of Physics Pohang University of Science and Technology Pohang37673 Korea Republic of Francis Crick Institute 1 Midland Road LondonNW1 1AT United Kingdom Department of Chemistry University College London 20 Gordon Street LondonWC1H 0AJ United Kingdom School of Physics and Electronics Hunan University Changsha410082 China Department of Cell Biology Erasmus Mc Rotterdam Netherlands Faculty of Pure and Applied Mathematics Hugo Steinhaus Center Wroclaw University of Science and Technology Wroclaw Poland Department of Electrical and Computer Engineering Colorado State University Fort CollinsCO80523 United States PhyLife Department of Physics Chemistry and Pharmacy University of Southern Denmark Odense MDK-5230 Denmark Institut Pasteur Decision and Bayesian Computation Lab Paris France Center for Ai and Natural Sciences Korea Institute for Advanced Study Seoul Korea Republic of Institute for Physics and Astronomy University of Potsdam Karl-Liebknecht-Str 24/25 Potsdam-GolmD-14476 Germany Sackler Center for Computational Molecular and Materials Science Tel Aviv University Tel Aviv69978 Israel School of Mechanical Engineering Tel Aviv University Tel Aviv69978 Israel Institut Pasteur Decision and Bayesian Computation Lab Paris France Department of Physics Research Center Optimas Technische Universität Kaiserslautern Kaiserslautern67663 Germany Icrea Pg. Lluís Companys 23 Barcelona08010 Spain C. de la Laura 13 Vic08500 Spain

Deviations from Brownian motion leading to anomalous diffusion are ubiquitously found in transport dynamics, playing a crucial role in phenomena from quantum physics to life sciences. The detection and characterization of anomalous diffusion from the measurement of an individual trajectory are challenging tasks, which traditionally rely on calculating the mean squared displacement of the trajectory. However, this approach breaks down for cases of important practical interest, e.g., short or noisy trajectories, ensembles of heterogeneous trajectories, or non-ergodic processes. Recently, several new approaches have been proposed, mostly building on the ongoing machine-learning revolution. Aiming to perform an objective comparison of methods, we gathered the community and organized an open competition, the Anomalous Diffusion challenge (AnDi). Participating teams independently applied their own algorithms to a commonly-defined dataset including diverse conditions. Although no single method performed best across all scenarios, the results revealed clear differences between the various approaches, providing practical advice for users and a benchmark for developers. Copyright © 2021, The Authors. All rights reserved.

关键词： Trajectories

Multi-terminal memtransistors from polycrystalline monolayer MoS2

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arXiv 2018年

作者： Sangwan, Vinod K. Lee, Hong-Sub Bergeron, Hadallia Balla, Itamar Beck, Megan E. Chen, Kan-Sheng Hersam, Mark C. Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Northwestern University EvanstonIL60208 United States Department of Electrical Engineering and Computer Science Northwestern University EvanstonIL60208 United States

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing.1, 2, 3, 4, 5, 6 Compared to flash memory, memristors have higher endurance, multi-bit data storage, and faster read/write times.4, 7, 8 However, although 2-terminal memristors have demonstrated basic neural functions, synapses in the human brain outnumber neurons by more than a factor of 1000, which implies that multi-terminal memristors are needed to perform complex functions such as heterosynaptic plasticity.3, 9, 10, 11, 12, 13 Previous attempts to move beyond 2-terminal memristors include the 3-terminal Widrow-Hoff memistor14 and field-effect transistors with nanoionic gates15 or floating gates,16 albeit without memristive switching in the transistor.17 Here, we report the scalable experimental realization of a multi-terminal hybrid memristor and transistor (i.e., memtransistor) using polycrystalline monolayer MoS2. Two-dimensional (2D) MoS2 memtransistors show gate tunability in individual states by 4 orders of magnitude in addition to large switching ratios with high cycling endurance and long-term retention of states. In addition to conventional neural learning behavior of long-term potentiation/depression, 6-terminal MoS2 memtransistors possess gate-tunable heterosynaptic functionality that is not achievable using 2-terminal memristors. For example, the conductance between a pair of two floating electrodes (pre-synaptic and post-synaptic neurons) is varied by ~10× by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements, and device modeling reveal that bias-induced MoS2 defect motion drives resistive switching by dynamically varying Schottky barrier heights. Overall, the seamless integration of a memristor and transistor into one multi-terminal device has the potential to enable complex

关键词： Molybdenum compounds

Electronic transport in two-dimensional materials

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arXiv 2018年

作者： Sangwan, Vinod K. Hersam, Mark C. Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Northwestern University EvanstonIL60208 United States Department of Electrical Engineering and Computer Science Northwestern University EvanstonIL60208 United States

Two-dimensional (2D) materials have captured the attention of the scientific community due to the wide range of unique properties at nanometer-scale thicknesses. While significant exploratory research in 2D materials has been achieved, the understanding of 2D electronic transport and carrier dynamics remains in a nascent stage. Furthermore, since prior review articles have provided general overviews of 2D materials or specifically focused on charge transport in graphene, here we instead highlight charge transport mechanisms in post-graphene 2D materials with particular emphasis on transition metal dichalcogenides and black phosphorus. For these systems, we delineate the intricacies of electronic transport including bandstructure control with thickness and external fields, valley polarization, scattering mechanisms, electrical contacts, and doping. In addition, electronic interactions between 2D materials are considered in the form of van der Waals heterojunctions and composite films. This review concludes with a perspective on the most promising future directions in this fast-evolving field. Copyright © 2018, The Authors. All rights reserved.

关键词： Van der Waals forces

Beryllium polyhydride be4h8(h2)2 synthesized at hp/ht

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arXiv 2019年

作者： Matsuoka, Takahiro Fujihisa, Hiroshi Ishikawa, Y Takahiro Nakagawa, Takaya Kuno, Keiji Hirao, Naohisa Ohishi, Yasuo Shimizu, Katsuya Sasaki, Shigeo Department of Electrical Faculty of Engineering Gifu University Electronic and Computer Engineering Gifu501-1193 Japan University of Tennessee KnoxvilleTN37996 United States Ibaraki305-8565 Japan Elements Strategy Initiative Center for Magnetic Materials National Institute for Material Science Ibaraki305-0047 Japan Graduate School of Engineering Gifu University Gifu501-1193 Japan Environmental and Renewable Energy Systems Division Gifu University Gifu501-1193 Japan Hyogo679-5198 Japan Center for Science and Technology under Extreme Conditions Graduate School of Engineering Science Osaka University Osaka560-8531 Japan

We report the XRD and Raman scattering measurements in combination with DFT calculations that reveal the formation of beryllium polyhydride Be4H8(H2)2 by laser heating Be/H2 mixture to above 1700 K at pressures between 5 GPa and 8 GPa. The Be4H8(H2)2 crystallizes in a P63/mmc structure and consists of corner-sharing BeH4 tetrahedrons and H2 molecules that are in an interstitial site. The Be4H8(H2)2 is stable at least to 14 GPa on compression and stable down to 4 GPa at room temperature. Our ab-initio calculations suggest that the Be4H8(H2)2 is a meta-stable phase of Be-H system. Copyright © 2019, The Authors. All rights reserved.

关键词： Calculations

Corrigendum to “Effect of Al 2 O 3 on structural dynamics and dielectric properties of lithium metasilicate photoetchable glasses as an interposer technology for microwave integrated circuits” [Ceram. Int. 49 (2020) 18032–18036]

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Ceramics International 2020年第15期46卷 24763-24763页

作者： Tianpeng Liang Jihua Zhang Hongwei Chen Libin Gao Gongwen Gan Sheng Qu Chongsheng Wu Vincent G. Harris State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science & Technology of China Chengdu Sichuan 610054 PR China Collaboration Innovation Center of Electric Materials and Devices University of Electronic Science & Technology of China Chengdu Sichuan 610054 PR China Center for Microwave Magnetic Materials and Integrated Circuits Department of Electrical and Computer Engineering Northeastern University Boston MA 02115 USA