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arXiv 2019年

作者： Bonacum, Jason P. O'Hara, Andrew Bao, De-Liang Ovchinnikov, Oleg S. Zhang, Yan-Fang Gordeev, Georgy Arora, Sonakshi Reich, Stephanie Idrobo, Juan-Carlos Haglund, Richard F. Pantelides, Sokrates T. Bolotin, Kirill Department of Physics and Astronomy Vanderbilt University NashvilleTN United States Institute of Physics University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing100190 China Institute for Functional Imaging of Materials Oak Ridge National Laboratory Oak RidgeTN United States Freie Universität Berlin Fachbereich Physik Institut für Experimentalphysik Arnimallee 14 Berlin14195 Germany Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN United States Department of Electrical Engineering and Computer Science Vanderbilt University NashvilleTN37235 United States

Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and densityfunctional-theory (DFT) calculations to study the atomic structure of bilayer graphene (BLG) and few-layer graphene (FLG) intercalated with FeCl3. In BLG we discover two distinct intercalated structures that we identify as monolayer-FeCl3 and monolayer-FeCl2. The two structures are separated by atomically sharp boundaries and induce large but different free-carrier densities in the graphene layers, 7.1 × 10-13cm-2and 7.8 × 1013cm-2respectively. In FLG, we observe multiple FeCl3layers stacked in a variety of possible configurations with respect to one another. Finally, we find that the microscope's electron beam can convert the FeCl3monolayer into FeOCl monolayers in a rectangular lattice. These results reveal the need for a combination of atomically-resolved microscopy, spectroscopy, and DFT calculations to identify intercalated structures and study their properties. Copyright © 2019, The Authors. All rights reserved.

关键词： Iron compounds

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electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

arXiv

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arXiv 2018年

作者： Hui, Fei Fang, Wenjing Leong, Wei Sun Kpulun, Tewa Wang, Haozhe Yang, Hui Ying Villena, Marco A. Harris, Gary Kong, Jing Lanza, Mario Institute of Functional Nano & Soft Materials Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou215123 China Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Pillar of Engineering Product Development Singapore University of Technology and Design 8 Somapah Road Singapore487372 Singapore Department of Electrical and Computer Engineering Howard University WashingtonDC20059 United States

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Here it is shown that the electrical properties of h-BN stacks grown on polycrystalline Pt vary a lot depending on the crystalline orientation of the Pt grain, but within the same grain the electrical properties of the h-BN are very homogeneous. The reason is that the thickness of the CVD-grown h-BN stack is different on each Pt grain. Conductive atomic force microscopy (CAFM) maps show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one Pt grain to another. However, probe station experiments reveal that the variability of electronic devices fabricated within the same Pt grain is surprisingly small. As cutting-edge electronic devices are ultra-scaled, and as the size of the metallic substrate grains can easily exceed 100 μm (in diameter), CVD-grown h-BN stacks may be useful to fabricate electronic devices with low variability. Copyright © 2018, The Authors. All rights reserved.

关键词： III-V semiconductors

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Microring resonators coupling tunability by heterogeneous 2D material integration

arXiv

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arXiv 2018年

作者： Maiti, R. Hemnani, R. Amin, R. Ma, Z. Tahersima, M.H. Empante, T.A. Dalir, H. Agarwal, R. Bartels, L. Sorger, V.J. Department of Electrical and Computer Engineering George Washington University WashingtonDC20052 United States Chemistry and Materials Science and Engineering University of California RiversideCA92521 United States Omega Optics Inc. 8500 Shoal Creek Blvd. AustinTX78757 United States Department of Materials Science and Engineering University of Pennsylvania PhiladelphiaPA19104 United States

Atomically thin 2D materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform. An understanding of the role of excitons in transition metal dichalcogenides in Silicon photonic platform is a prerequisite for advances in optical communication technology, signal processing, and possibly computing. Here we demonstrate passive tunable coupling by integrating few layers of MoTe2 on a micro-ring resonator. We find a TMD-to-ring’s circumference coverage length ratio to place the ring into critical coupling to be about 10% as determined from the variation of spectral resonance visibility and loss as a function of TMD coverage. Using this TMD–ring heterostructure, we further demonstrate a semi-empirical method to determine the index of a 2D material (nMoTe2 of 4.36+0.011i) near telecommunication-relevant wavelength. Copyright © 2018, The Authors. All rights reserved.

关键词： Transition metals

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Electroenzymatic Sensors: A Mediator‐Free Electroenzymatic Sensing Methodology to Mitigate Ionic and Electroactive Interferents' Effects for Reliable Wearable Metabolite and Nutrient Monitoring (Adv. Funct. Mater. 10/2020)

引用

Advanced Functional materials 2020年第10期30卷

作者： Xuanbing Cheng Bo Wang Yichao Zhao Hannaneh Hojaiji Shuyu Lin Ryan Shih Haisong Lin Stephanie Tamayosa Brittany Ham Phoenix Stout Kamyar Salahi Zhaoqing Wang Chuanzhen Zhao Jiawei Tan Sam Emaminejad Interconnected & Integrated Bioelectronics Lab (I2BL) Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA David Geffen School of Medicine University of California Los Angeles CA 90095 USA Department of Bioengineering University of California Los Angeles CA 90095 USA Department of Chemical and Biomolecular Engineering University of California Los Angeles CA 90095 USA Department of Chemistry and Biochemistry University of California Los Angeles CA 90095 USA

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Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

Temperature- and doping-concentration-dependent characterist...

引用

作者： Tso, Chia-Tsung Liu, Tung-Yu Pan, Fu-Ming Sheu, Jeng-Tzong Department of Materials Science and Engineering National Chiao Tung University Hsinchu30050 Taiwan Institute of Biomedical Engineering College of Electrical and Computer Engineering National Chiao Tung University Hsinchu30050 Taiwan

The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (Vth), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both Vth and Ion showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019cm%3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020cm%3. © 2017 The Japan Society of Applied Physics.

关键词： Threshold voltage

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Monolithic Doped-Semiconductor Platform for Optical Devices in the Infrared

Monolithic Doped-Semiconductor Platform for Optical Devices ...

引用

IEEE Research and Applications of Photonics In Defense Conference (RAPID)

作者： Raymond Wambold Jad Salman Martin Hafermann Jura Rensberg Chenghao Wan Bradley S. Gundlach Carsten Ronning Mikhail A. Kats Department of Electrical and Computer Engineering University of Wisconsin - Madison 1415 Engineering Drive Madison WI USA Institute of Solid State Physics Friedrich Schiller University Jena Jena Germany Department of Materials Science and Engineering University of Wisconsin - Madison 1509 University Ave Madison WI USA

ISBN: (纸本)9781538653500

The ability to control light in the infrared is central to improving sensing, spectroscopy, communication, and directed-energy technologies. In this presentation, we demonstrate a platform for flat optical devices based on selectively doped semiconductors for monolithic diffractive, plasmonic, and gradient-index devices in the infrared.

关键词： Plasmons Silicon Doping Photonics Lenses Semiconductor process modeling

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Algorithmic Advances in Single Particle Cryo-EM Data Processing

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Microscopy and Microanalysis 2018年第S1期24卷 868-869页

作者： Ali Punjani Haowei Zhang John Rubinstein Marcus Brubaker David Fleet University of Toronto Department of Computer Science Toronto Canada Structura Biotechnology Inc. Toronto Canada Molecular Structure and Function Program The Hospital for Sick Children Research Institute Toronto Canada. Department of Biochemistry The University of Toronto Toronto Ontario Canada. Department of Medical Biophysics The University of Toronto Toronto Ontario Canada Department of Electrical Engineering and Computer Science York University Toronto Ontario Canada

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Measurement of the inclusive cross section in final states with at least one lepton and additional jets with 302 pb−1 of pp collisions at = 5.02 TeV

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Journal of High Energy Physics 2025年第4期2025卷 1-44页

作者： Hayrapetyan, A. Tumasyan, A. Adam, W. Andrejkovic, J. W. Bergauer, T. Chatterjee, S. Damanakis, K. Dragicevic, M. Hussain, P. S. Jeitler, M. Krammer, N. Li, A. Liko, D. Mikulec, I. Schieck, J. Schöfbeck, R. Schwarz, D. Sonawane, M. Waltenberger, W. Wulz, C.-E. Janssen, T. Van Laer, T. Van Mechelen, P. Breugelmans, N. D’Hondt, J. Dansana, S. De Moor, A. Delcourt, M. Heyen, F. Lowette, S. Makarenko, I. Müller, D. Tavernier, S. Tytgat, M. Van Onsem, G. P. Van Putte, S. Vannerom, D. Bilin, B. Clerbaux, B. Das, A. K. De Lentdecker, G. Evard, H. Favart, L. Gianneios, P. Jaramillo, J. Khalilzadeh, A. Khan, F. A. Lee, K. Mahdavikhorrami, M. Malara, A. Paredes, S. Shahzad, M. A. Thomas, L. Vanden Bemden, M. Vander Velde, C. Vanlaer, P. De Coen, M. Dobur, D. Gokbulut, G. Hong, Y. Knolle, J. Lambrecht, L. Marckx, D. Mota Amarilo, K. Skovpen, K. Van Den Bossche, N. van der Linden, J. Wezenbeek, L. Benecke, A. Bethani, A. Bruno, G. Caputo, C. De Favereau De Jeneret, J. Delaere, C. Donertas, I. S. Giammanco, A. Guzel, A. O. Jain, Sa. Lemaitre, V. Lidrych, J. Mastrapasqua, P. Tran, T. T. Wertz, S. Alves, G. A. Alves Gallo Pereira, M. Coelho, E. Correia Silva, G. Hensel, C. Menezes De Oliveira, T. Mora Herrera, C. Moraes, A. Rebello Teles, P. Soeiro, M. Vilela Pereira, A. Aldá Júnior, W. L. Barroso Ferreira Filho, M. Brandao Malbouisson, H. Carvalho, W. Chinellato, J. Da Costa, E. M. Da Silveira, G. G. De Jesus Damiao, D. Fonseca De Souza, S. Gomes De Souza, R. Laux Kuhn, T. Macedo, M. Martins, J. Mundim, L. Nogima, H. Pinheiro, J. P. Santoro, A. Sznajder, A. Thiel, M. Bernardes, C. A. Calligaris, L. Fernandez Perez Tomei, T. R. Gregores, E. M. Maietto Silverio, I. Mercadante, P. G. Novaes, S. F. Orzari, B. Padula, Sandra S. Aleksandrov, A. Antchev, G. Hadjiiska, R. Iaydjiev, P. Misheva, M. Shopova, M. Sultanov, G. Dimitrov, A. Litov, L. Pavlov, B. Petkov, P. Petrov, A. Shumka, E. Keshri, S. Laroze, D. Thakur, S. Cheng, T. Javaid, T. Yuan, L. Hu, Z. Liang, Z. Liu, J. Chen, G. M. Chen, H. S. Chen, M. Iemmi, F. Jiang, C. H. Kapoor Yerevan Physics Institute Yerevan Armenia Yerevan State University Yerevan Armenia Institut für Hochenergiephysik Vienna Austria TU Wien Vienna Austria Universiteit Antwerpen Antwerpen Belgium Vrije Universiteit Brussel Brussel Belgium Ghent University Ghent Belgium Université Libre de Bruxelles Bruxelles Belgium Université Catholique de Louvain Louvain-la-Neuve Belgium Centro Brasileiro de Pesquisas Fisicas Rio de Janeiro Brazil Universidade do Estado do Rio de Janeiro Rio de Janeiro Brazil Universidade Estadual de Campinas Campinas Brazil Federal University of Rio Grande do Sul Porto Alegre Brazil UFMS Nova Andradina Brazil Universidade Estadual Paulista Universidade Federal do ABC São Paulo Brazil Institute for Nuclear Research and Nuclear Energy Bulgarian Academy of Sciences Sofia Bulgaria University of Sofia Sofia Bulgaria Instituto De Alta Investigación Universidad de Tarapacá Arica Chile Beihang University Beijing China Department of Physics Tsinghua University Beijing China Institute of High Energy Physics Beijing China University of Chinese Academy of Sciences Beijing China China Center of Advanced Science and Technology Beijing China China Spallation Neutron Source Guangdong China State Key Laboratory of Nuclear Physics and Technology Peking University Beijing China Guangdong Provincial Key Laboratory of Nuclear Science and Guangdong-Hong Kong Joint Laboratory of Quantum Matter South China Normal University Guangzhou China Sun Yat-Sen University Guangzhou China University of Science and Technology of China Hefei China Nanjing Normal University Nanjing China Henan Normal University Xinxiang China The University of Iowa Iowa City USA Institute of Modern Physics and Key Laboratory of Nuclear Physics and Ion-beam Application (MOE) - Fudan University Shanghai China Zhejiang University Hangzhou China Universidad de Los Andes Bogota Colombia Universidad de Antioquia Medellin Colombia University of Split Faculty of Electrical Engineeri

A measurement of the top quark pair ( $$ \textrm{t}\overline{\textrm{t}} $$ ) production cross section in proton-proton collisions at a centre-of-mass energy of 5.02 TeV is presented. The data were collected at the LHC in autumn 2017, in dedicated runs with low-energy and low-intensity conditions with respect to the default configuration, and correspond to an integrated luminosity of 302 pb−1. The measurement is performed using events with one electron or muon, and multiple jets, at least one of them being identified as originating from a b quark (b tagged). Events are classified based on the number of all reconstructed jets and of b-tagged jets. Multivariate analysis techniques are used to enhance the separation between the signal and backgrounds. The measured cross section is $$ 62.5\pm 1.6{\left(\textrm{stat}\right)}_{-2.5}^{+2.6}\left(\textrm{syst}\right)\pm 1.2\left(\textrm{lumi}\right) $$ pb. A combination with the result in the dilepton channel based on the same data set yields a value of 62.3 ± 1.5 (stat) ± 2.4 (syst) ± 1.2 (lumi) pb, to be compared with the standard model prediction of $$ {69.5}_{-3.7}^{+3.5} $$ pb at next-to-next-to-leading order in perturbative quantum chromodynamics.

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Self-assembly of highly symmetrical, ultrasmall inorganic cages directed by surfactant micelles (vol 558, pg 577, 2018)

引用

NATURE 2018年第7726期562卷 E7-E7页

作者： Ma, Kai Gong, Yunye Aubert, Tangi Turker, Melik Z. Kao, Teresa Doerschuk, Peter C. Wiesner, Ulrich Department of Materials Science and Engineering Cornell University Ithaca USA School of Electrical and Computer Engineering Cornell University Ithaca USA Department of Chemistry Ghent University Ghent Belgium Nancy E. and Peter C. Meinig School of Biomedical Engineering Cornell University Ithaca USA

Change history: In Fig. 3b of this Letter, the labels for the outer (11.8 nm) and inner (7.4 nm) diameters of the structure were inadvertently omitted. Fig. 3 has been corrected online.

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Spin-conserving resonant tunneling in twist-controlled WSe2-hBN-WSe2 heterostructures

arXiv

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arXiv 2018年

作者： Kim, Kyounghwan Prasad, Nitin Movva, Hema C.P. William Burg, G. Wang, Yimeng Larentis, Stefano Taniguchi, Takashi Watanabe, Kenji Register, Leonard F. Tutuc, Emanuel Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin AustinTX78758 United States National Institute for Materials Science 1-1 Namiki Tsukuba Ibaraki305-0044 Japan

We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin−orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to probe the conservation of spin-valley degree of freedom in tunneling. In heterostructures where the two WSe2 monolayers have a 180° relative twist, such that the Brillouin zone of one layer is aligned with the time-reversed Brillouin zone of the opposite layer, the resonant tunneling between the layers is suppressed. These findings provide evidence that in addition to momentum, the spin-valley degree of freedom is also conserved in vertical transport. Copyright © 2018, The Authors. All rights reserved.

关键词： Tungsten compounds

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