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arXiv 2018年

作者： Larentis, Stefano Movva, Hema C.P. Fallahazad, Babak Kim, Kyounghwan Behroozi, Armand Taniguchi, Takashi Watanabe, Kenji Banerjee, Sanjay K. Tutuc, Emanuel Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin AustinTX78758 United States National Institute for Materials Science 1-1 Namiki Tsukuba Ibaraki305-0044 Japan

We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe2, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8me is extracted from the SdH oscillations' temperature dependence;me is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the K-point. We attribute the FFs parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio. Copyright © 2018, The Authors. All rights reserved.

关键词： Electrons

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A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm

arXiv

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arXiv 2018年

作者： Maiti, Rishi Hemnani, Rohit A. Amin, Rubab Ma, Zhizhen Tahersima, Mohammad H. Empante, Tom A. Dalir, Hamed Agarwal, Ritesh Bartels, Ludwig Sorger, Volker J. Department of Electrical and Computer Engineering George Washington University WashingtonDC20052 United States Chemistry and Materials Science and Engineering University of California RiversideCA92521 United States Omega Optics Inc. 8500 Shoal Creek Blvd. AustinTX78757 United States Department of Materials Science and Engineering University of Pennsylvania PhiladelphiaPA19104 United States

Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. Here we demonstrate a semi-empirical method to determine the index of a 2D material (nMoTe2 of 4.36+0.011i) near telecommunication-relevant wavelength by integrating few layers of MoTe2 onto a micro-ring resonator. The placement, control, and optical-property understanding of 2D materials with integrated photonics paves a way for further studies of active 2D material-based optoelectronics and circuits. Copyright © 2018, The Authors. All rights reserved.

关键词： Optical properties

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Broadband Cyclic-Symmetric Magnet-less Circulatorsand Theoretical Bounds on their Bandwidth

arXiv

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arXiv 2018年

作者： Kord, Ahmed Sounas, Dimitrios L. Xiao, Zhicheng Alù, Andrea Department of Electrical and Computer Engineering University of Texas at Austin AustinTX78712 United States Advanced Science Research Center Physics Program Graduate Center Photonics Initiative Department of Electrical Engineering City College of New York City University of New York New York NY10031 United States

In this paper, we explore theoretically and experimentally broadband spatiotemporally modulated (STM) magnet-less circulators realized by combining three-port non-reciprocal junctions with three identical bandpass filters. We develop a rigorous theory for the proposed circuit, which allows to optimize its design and to derive a global bound on the maximum possible bandwidth (BW). We verify our theory with simulations and measurements of a printed circuit board (PCB) prototype based on a differential wye junction and second-order Chebyshev bandpass filters, resulting in a measured fractional BW of 13.9% at a center frequency of 1 GHz. Copyright © 2018, The Authors. All rights reserved.

关键词： Bandwidth

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Wearable Electronics: Self‐Bondable and Stretchable Conductive Composite Fibers with Spatially Controlled Percolated Ag Nanoparticle Networks: Novel Integration Strategy for Wearable Electronics (Adv. Funct. Mater. 49/2020)

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Advanced Functional materials 2020年第49期30卷 2070321-2070321页

作者： Chaebeen Kwon Duhwan Seong Jeongdae Ha Dongwon Chun Jee‐Hwan Bae Kukro Yoon Minkyu Lee Janghoon Woo Chihyeong Won Seungmin Lee Yongfeng Mei Kyung‐In Jang Donghee Son Taeyoon Lee Nanobio Device Laboratory School of Electrical and Electronic Engineering Yonsei University 50 Yonsei‐ro Seodaemun‐gu Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering Sungkyunkwan University 2066 Seobu‐ro Jangan‐gu Suwon‐si Gyeonggi‐do 16419 Republic of Korea Department of Robotics Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) 333 Techno Jungang‐daero Hyeonpung‐eup Dalseong‐gun Daegu 42988 Republic of Korea Advanced Analysis Center Korea Institute of Science and Technology (KIST) 5 Hwarang‐ro 14‐gil Seongbuk‐gu Seoul 02792 Republic of Korea Department of Materials Science Fudan University Shanghai 200438 P. R. China

In article number 2005447, Donghee Son, Taeyoon Lee, and co‐workers develop self‐bondable and self‐weavable fibers as novel components for fiber‐based electronic devices. The fibers are both conductive and stretchable, which eliminates the trade‐off associated with the percolation theory. The integration with self‐bondable and self‐weavable interconnects represents a new integration strategy for fiber‐based devices.

关键词： fiber component integration self‐bondable conductive fibers stretchable and flexible interconnects wearable electronics

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Diffuson-driven ultralow thermal conductivity in amorphous Nb2O5 thin films

arXiv

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arXiv 2018年

作者： Cheng, Zhe Weidenbach, Alex Feng, Tianli Tellekamp, M. Brooks Howard, Sebastian Wahila, Matthew J. Zivasatienraj, Bill Foley, Brian Pantelides, Sokrates T. Piper, Louis F.J. Doolittle, William Graham, Samuel George W. Woodruff School of Mechanical Engineering Georgia Institute of Technology AtlantaGA30332 United States School of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA30332 United States Department of Physics and Astronomy Department of Electrical Engineering and Computer Science Vanderbilt University NashvilleTN37235 United States Materials Science and Technology Division Oak Ridge National Laboratory Oak RidgeTN37831 United States Department of Physics Applied Physics and Astronomy Binghamton University BinghamtonNY13902 United States Materials Science & Engineering Binghamton University BinghamtonNY13902 United States School of Materials Science and Engineering Georgia Institute of Technology AtlantaGA30332 United States

Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentrationThis stable and low thermal conductivity facilitates excellent performance for applications such as memristors. Copyright © 2018, The Authors. All rights reserved.

关键词： Memristors

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Pioneering the Use of Neural Network Architectures and Feature engineering for Real-Time Augmented Microscopy and Analysis

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Microscopy and Microanalysis 2018年第S1期24卷 514-515页

作者： Matthew L. Gong Su Jong Yoon Raymond R. Unocic Hope Ishii John P. Bradley Brandon D. Miller Daniel Masiel Bryan Reed Tolga Tasdizen Jeffery A. Aguiar University of Utah Scientific Computing Imaging Institute Department of Electrical and Computer Engineering Salt Lake City UT Idaho National Laboratory Nuclear Science and Technology Division Idaho Falls ID Oak Ridge National Laboratory Center for Nanophase Materials Science Oak Ridge TN University of Hawai’i at Manoa School of Ocean and Earth Science and Technology Honolulu HI Integrated Dynamic Electron Solutions Pleasanton CA University of Utah Department of Materials Science and Engineering Salt Lake City UT

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Tunable Metasurfaces: Kerker-Conditioned Dynamic Cryptographic Nanoprints (Advanced Optical materials 4/2019)

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Advanced Optical materials 2019年第4期7卷

作者： Jaehyuck Jang Heonyeong Jeong Guangwei Hu Cheng-Wei Qiu Ki Tae Nam Junsuk Rho Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea Department of Mechanical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea Department of Electrical and Computer Engineering National University of Singapore Singapore 119077 Singapore Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea

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Enhancing optical response of graphene through stochastic resonance

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Physical Review B 2018年第14期97卷 144204-144204页

作者： Lei Ying Liang Huang Ying-Cheng Lai School of Electrical Computer and Energy Engineering Arizona State University Tempe Arizona 85287 USA School of Physical Science and Technology and Key Laboratory for Magnetism and Magnetic Materials of MOE Lanzhou University Lanzhou Gansu 730000 China Department of Physics Arizona State University Tempe Arizona 85287 USA

Enhancing the optical response of graphene is a topic of interest with applications in optoelectronics. Subject to light irradiation, graphene can exhibit nontrivial topologically insulating states, effectively turning itself into a Floquet topological insulator due to the time periodicity of the external driving. We find that, when random disorder is present, its interplay with the topologically insulating states can have a dramatic effect on electronic transport through graphene. In particular, we consider the prototypical setting where a graphene nanoribbon is irradiated by circularly polarized light, where the length of the nanoribbon is sufficiently long so that evanescent states have little effect on transport. We uncover a resonance phenomenon in which the conductance is enhanced as the disorder strength is increased from zero, reaches a maximum value for an optimal level of disorder, and decreases as the disorder is strengthened further. With respect to its value at the zero-disorder strength, the maximum conductance value can be as much as 50% higher. Qualitatively, this can be understood as a result of the dynamical interplay between disorder and Floquet states (channels) generated by light irradiation. Quantitatively, the resonance phenomenon can be explained in the framework of Born theory, where the disorder reorganizes the Floquet Hamiltonian and enhances the effective coupling between the adjacent Floquet conducting channels. That is, disorder is capable of promoting both photon absorption and emission, leading to significant enhancement of nonequilibrium electronic transport. We demonstrate the robustness of the resonance phenomenon by investigating the effects of spatial symmetry breaking on transport and provide an understanding based on analyzing the behavior of the density of states of the Floquet channels.

关键词： Floquet systems Disordered systems Graphene

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Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

Structural and Optical Properties of Al0.30Ga0.70N/AlN Multi...

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作者： Brummer, Gordie Nothern, Denis Moustakas, T.D. Department of Electrical and Computer Engineering and Photonics Center Boston University BostonMA02215 United States Department of Materials Science and Engineering and Photonics Center Boston University BostonMA0215 United States

AlGaN based multiple quantum wells (MQWs) were grown on 8° vicinal 4H p-SiC substrates by plasma-assisted molecular beam epitaxy. The MQWs were designed to emit near 300 nm using the wurtzite k.p model. The MQW periodicity and strain state were measured with X-ray diffraction. The optical properties were characterized with temperature dependent photoluminescence (PL). The internal quantum efficiency was estimated from the ratio of room temperature to 18K integrated PL intensity. Internal quantum efficiency up to 48% was achieved. These data are encouraging for future vertical and inverted ultraviolet light emitting diodes grown on p-SiC substrates. Copyright © materials Research Society 2016.

关键词： Molecular beam epitaxy

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Retracted: The Effect of Mixed Pertamax with Tuak Nias (Tuonifaro) on Fuel Consumption at 125CC Machine and Its Dissemination Using Website

Retracted: The Effect of Mixed Pertamax with Tuak Nias (Tuon...

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2018 Workshop on Multidisciplinary and Its Applications: Applied Mathematics, computer science, Information Systems, and Information Technology, WMA-Mathcomtech 2018

作者： Achmad Daengs, G.S. Tarigan, Kristian Ongko, Erianto Hartono, H. Abdullah, Dahlan Erliana, Cut Ita Nurmawati, N. Sallu, Sulfikar Sriadhi, S. Iskandar, Akbar Kurniasih, Nuning Daengs, Achmad Nanuru, Ricardo Freedom Saleh, A.A. Setiawan, Muhammad Ikhsan Hadikurniawati, Wiwien Winarno, Edy Department of Mechanical Engineering Universitas Darma Agung Medan Indonesia Department of Informatics Akademi Teknologi Industri Immanuel Indonesia Department of Computer Science STMIK IBBI Medan Indonesia Department of Informatics Universitas Malikussaleh Aceh Indonesia Department of Industrial Engineering Universitas Malikussaleh Aceh Indonesia Faculty of Industry Technique University of 45 Surabaya Indonesia Faculty of Information Technology Universitas Sembilan Belas November Kolaka Sulawesi Tenggara Indonesia Department of Electrical Engineering Universitas Negeri Medan Indonesia Department of Informatics STMIK AKBA Makassar Indonesia Faculty of Communication Sciences Library and Information Science Program Universitas Padjadjaran Bandung Indonesia Department of Management Universitas 45 Surabaya Indonesia Universitas Kristen Indonesia Maluku. Ambon Indonesia Statistics Financial and Social Sciences Research Group Indonesia Department of Civil Engineering Narotama University Surabaya Indonesia Faculty of Information Technology Universitas Stikubank Semarang Indonesia

The purpose of this research is to know how influence of mixture of pertamax with Tuak Nias (Tuonifaro) to fuel consumption at 125 cc engine To prove that Tuak Nias or Tuonifaro can be used as fuel mixture on motorcycle and examine how big influence of mix between Tuak Nias or Tuonifaro with Pertamax, conducting research by literature study method or literature study. Many authors use various supporting / input factors and supporting books related to the titles discussed. because Tuak Nias or tuonifaro contain low 4-5% ethanonic elements and contain 90% alcoholic elements so that the fuel easily burns easily in the combustion chamber and produces great power. The results of this research will be disseminated using the website. © Published under licence by IOP Publishing Ltd.

关键词： Information systems

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