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Hydrogel‐Enabled Transfer Printing: Hydrogel‐Enabled Transfer‐Printing of Conducting Polymer Films for Soft Organic Bioelectronics (Adv. Funct. Mater. 6/2020)

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Advanced Functional materials 2020年第6期30卷

作者： Shiming Zhang Haonan Ling Yihang Chen Qingyu Cui Jiahua Ni Xiaochen Wang Martin C. Hartel Xiang Meng KangJu Lee Junmin Lee Wujin Sun Haisong Lin Sam Emaminejad Samad Ahadian Nureddin Ashammakhi Mehmet R. Dokmeci Ali Khademhosseini Department of Bioengineering University of California‐Los Angeles Los Angeles CA 90095 USA Center for Minimally Invasive Therapeutics (C‐MIT) University of California‐Los Angeles Los Angeles CA 90095 USA California NanoSystems Institute University of California‐Los Angeles Los Angeles CA 90095 USA Department of Mechanical and Aerospace Engineering University of California‐Los Angeles Los Angeles CA 90095 USA Department of Materials Science and Engineering University of California‐Los Angeles Los Angeles CA 90095 USA Department of Electrical Engineering and Computer Science University of Michigan – Ann Arbor Ann Arbor MI 48109 USA Department of Engineering Physics Polytechnique Montreal Montreal QC H3C 3A7 Canada Department of Electrical and Computer Engineering University of California‐Los Angeles Los Angeles CA USA Department of Radiology University of California‐Los Angeles Los Angeles CA 90095 USA Department of Chemical and Biomolecular Engineering University of California‐Los Angeles Los Angeles CA 90095 USA

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

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arXiv 2018年

作者： Zheng, Jiabao Lienhard, Benjamin Doerk, Gregory Cotlet, Mircea Bersin, Eric Kim, Harrison Sejoon Byun, Young-Chul Nam, Chang-Yong Kim, Jiyoung Black, Charles T. Englund, Dirk Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Center for Functional Nanomaterials Brookhaven National Laboratory UptonNY11973 United States Department of Materials Science and Engineering University of Texas at Dallas 800 West Campbell Road RichardsonTX75080 United States

Nanodiamonds hosting colour centres are a promising material platform for various quantum technologies. The fabrication of non-aggregated and uniformly-sized nanodiamonds with systematic integration of single quantum emitters has so far been lacking. Here, we present a top-down fabrication method to produce 30.0±5.4 nm uniformly-sized single-crystal nanodiamonds by block copolymer self-assembled nanomask patterning together with directional and isotropic reactive ion etching. We show detected emission from bright single nitrogen vacancy centres hosted in the fabricated nanodiamonds. The lithographically precise patterning of large areas of diamond by self-assembled masks and their release into uniformly sized nanodiamonds open up new possibilities for quantum information processing and sensing. Copyright © 2018, The Authors. All rights reserved.

关键词： Block copolymers

Direct Observation of Cross-Polarized Excitons in Aligned Single-Chirality Single-Wall Carbon Nanotubes

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arXiv 2018年

作者： Katsutani, Fumiya Gao, Weilu Li, Xinwei Ichinose, Yota Yomogida, Yohei Yanagi, Kazuhiro Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Department of Physics Faculty of Science and Engineering Tokyo Metropolitan University Hachioji Tokyo192-0397 Department of Physics and Astronomy Rice University HoustonTX77005 United States Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States

Optical properties of single-wall carbon nanotubes (SWCNTs) for light polarized parallel to the nanotube axis have been extensively studied, whereas their response to light polarized perpendicular to the nanotube axis has not been well explored. Here, by using a macroscopic film of highly aligned single-chirality (6,5) SWCNTs, we performed a systematic polarization-dependent optical absorption spectroscopy study. In addition to the commonly observed angular-momentum-conserving interband absorption of parallel-polarized light, which generates E11 and E22 excitons, we observed a small but unambiguous absorption peak whose intensity is maximum for perpendicular-polarized light. We attribute this feature to the lowest-energy cross-polarized interband absorption processes that change the angular momentum along the nanotube axis by 1, generating E12 and E21 excitons. The energy difference between the E12 and E21 exciton peaks, expected from asymmetry between the conduction and valence bands, was smaller than the observed linewidth. Unlike previous observations of cross-polarized excitons in polarization-dependent photoluminescence and circular dichroism spectroscopy experiments, our direct observation using absorption spectroscopy allowed us to quantitatively analyze this resonance. Specifically, we determined the energy and oscillator strength of this resonance to be 1.54 and 0.05, respectively, compared with the values for the E11 exciton peak. These values, in combination with comparison with theoretical calculations, in turn led to an assessment of the environmental effect on the strength of Coulomb interactions in this aligned single-chirality SWCNT film. Copyright © 2018, The Authors. All rights reserved.

关键词： Excitons

Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−xFexSb

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Physical Review materials 2018年第1期2卷 014406-014406页

作者： S. D. Harrington A. D. Rice T. L. Brown-Heft B. Bonef A. Sharan A. P. McFadden J. A. Logan M. Pendharkar M. M. Feldman O. Mercan A. G. Petukhov A. Janotti L. Colakerol Arslan C. J. Palmstrøm Materials Department University of California Santa Barbara California 93106 USA Department of Physics and Astronomy University of Delaware Newark Delaware 19716 USA Department of Electrical and Computer Engineering University of California Santa Barbara California 93106 USA Physics Department University of California Santa Barbara California 93106 USA Physics Department Gebze Technical University Kocaeli 41400 Turkey Physics Department South Dakota School of Mines and Technology Rapid City South Dakota 57701 USA Department of Materials Science & Engineering University of Delaware Newark Delawere 19716 USA

Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi1−xFexSb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0≤x≤1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and x-ray diffraction. Using in situ x-ray photoelectron spectroscopy, only small changes in the valence band are detected for x≤0.5. For films with x≥0.05, ferromagnetism is observed in SQUID magnetometry with a saturation magnetization that scales linearly with Fe content. A dramatic decrease in the magnetic moment per formula unit occurs when the Fe is substitutionally alloyed on the Co site indicating a strong dependence on the magnetic moment with site occupancy. A crossover from both in-plane and out-of-plane magnetic moments to only in-plane moment occurs for higher concentrations of Fe. Ferromagnetic resonance indicates a transition from weak to strong interaction with a reduction in inhomogeneous broadening as Fe content is increased. Temperature-dependent transport reveals a semiconductor to metal transition with thermally activated behavior for x≤0.5. Anomalous Hall effect and large negative magnetoresistance (up to -18.5% at 100 kOe for x=0.3) are observed for higher Fe content films. Evidence of superparamagnetism for x=0.3 and 0.2 suggests, for moderate levels of Fe, that demixing of the CoTi1−xFexSb films into Fe-rich and Fe-deficient regions may be present. Atom probe tomography is used to examine the Fe distribution in an x=0.3 film. Statistical analysis reveals a nonhomogeneous distribution of Fe atoms throughout the film, which is used to explain the observed magnetic and electrical behavior.

关键词： Anomalous Hall effect Ferromagnetism Growth Magnetoresistance Magnetotransport Superparamagnetism Half-Heusler alloy Heusler alloy Density functional theory Ferromagnetic resonance Hall bar Magnetization measurements Molecular beam epitaxy Time-of-flight mass spectrometry

Retracted: LUC Algorithm in Visual Cryptography

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Retracted: LUC Algorithm in Visual Cryptography

2018 Workshop on Multidisciplinary and Its Applications: Applied Mathematics, computer science, Information Systems, and Information Technology, WMA-Mathcomtech 2018

作者： Achmad Daengs, G.S. Ratnadewi Alpha, Christian Dio Napitupulu, Darmawan Nurdiyanto, Heri Kurniasih, Nuning Hasibuan, Abdurrozaq Daengs, Achmad Manurung, Rosida Tiurma Mulyaningsih, Indrya Rahim, Robbi Sugianto, Castaka Agus Abdullah, Dahlan Department of Electrical Engineering Universitas Kristen Maranatha Bandung Indonesia Research Center for Quality System and Testing Technology Indonesian Institute of Sciences Banten Indonesia STMIK Dharma Wacana Indonesia Faculty of Communication Sciences Library and Information Science Program Universitas Padjadjaran Bandung Indonesia Universitas Islam Sumatera Utara Indonesia University of 45 Surabaya Indonesia Graduate Program in Scientific Psychology Universitas Kristen Maranatha Bandung Indonesia Department of Education Institut Agama Islam Negeri Syekh Nurjati Cirebon Indonesia School of Computer and Communication Engineering Universiti Malaysia Perlis Kubang Gajah Malaysia Politeknik TEDC Bandung Indonesia Department of Informatics Universitas Malikussaleh Aceh Utara Indonesia

Nowadays, messaging technology in digital data form more often used and not less messages that confidentially wanted. Then it should be modified so that can be understood only by the sender and the intended recipients. All of this system can be realization by using cryptography. LUC algorithms are introduced by Smith and Lennon in 1993. LUC algorithm is an algorithm that based on the use of Lucas sequence (specific arithmetic operations derived from Lucas row) that rarely used to enhance the security of the messages. In this research, LUC algorithm is combined with visual cryptography to process the encryption and the description of a colored image. Four different images were used in the trial here. The performance of the system is assessed using Structural similarity (SSIM) which has an assessment similar to human eye. If the image quality is the same as the original image, then the SSIM value is one. Whereas if the quality of decryption image is very different from the original image then the value of SSIM is zero. © Published under licence by IOP Publishing Ltd.

关键词： Information systems

Optical imprinting of superlattices in 2D materials

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arXiv 2019年

作者： Kim, Hwanmun Dehghani, Hossein Aoki, Hideo Martin, Ivar Hafezi, Mohammad Joint Quantum Institute NIST/University of Maryland College ParkMD20742 United States Department of Physics University of Maryland College ParkMD20742 United States Departments of Electrical and Computer Engineering Institute for Research in Electronics and Applied Physics University of Maryland College ParkMD20742 United States Department of Physics University of Tokyo Hongo Tokyo113-0033 Japan TsukubaIbaraki305-8568 Japan Materials Science Division Argonne National Laboratory ArgonneIL60439 United States

We propose a novel optical method to imprint superlattice structures in two-dimensional electronic systems. By changing the shape of the optical field, we synthesize various lattice structures with different spatial symmetry, periodicity, and strength. We find that the wide optical tunability allows one to tune different properties of the effective band structure, including Chern number, energy bandwidths, and band gaps. We consider the high-frequency regime where the electronic system can remain in the quasi-equilibrium phase for an extended amount of time. The spatiotemporal reconfigurablity of our approach opens up new possibilities to control light-matter interaction to generate novel electronic states and optoelectronic devices. Copyright © 2019, The Authors. All rights reserved.

关键词： Energy gap

Pump dynamics of thulium-doped soliton fiber lasers

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Pump dynamics of thulium-doped soliton fiber lasers

Advanced Solid State Lasers, ASSL 2017

作者： Akosman, Ahmet E. Sander, Michelle Y. Department of Electrical and Computer Engineering and BU Photonics Center Boston University BostonMA02215 United States Division of Materials Science and Engineering Boston University BrooklineMA02446 United States

The impact of core-pumping at pump wavelengths of 790 nm and 1565 nm on the optical performance, relative intensity and phase noise characteristics of a linear cavity thulium soliton mode-locked fiber lasers are prese... 详细信息

ISBN: (纸本)9780960038077

关键词： Fiber lasers

Gate field effects on the topological insulator BiSbTeSe2 interface

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arXiv 2019年

作者： Liu, Shuanglong Xu, Yang Wang, Yun-Peng Chen, Yong P. Fry, James N. Cheng, Hai-Ping Department of Physics University of Florida GainesvilleFL32611 United States Quantum Theory Project University of Florida GainesvilleFL32611 United States Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Purdue Quantum Science and Engineering Institute Purdue University West LafayetteIN47907 United States Center for Molecular Magnetic Quantum Materials University of Florida GainesvilleFL32611 United States

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Å. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. Using a first-principles based method that allows us to simulate a back gate, we observe that the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small, in agreement with experimental observations. Analysis shows that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This explains the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators. Copyright © 2019, The Authors. All rights reserved.

关键词： Electric insulators

Universal and operational benchmarking of quantum memories

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arXiv 2019年

作者： Yuan, Xiao Liu, Yunchao Zhao, Qi Regula, Bartosz Thompson, Jayne Gu, Mile Department of Materials University of Oxford Parks Road OxfordOX1 3PH United Kingdom Department of Electrical Engineering and Computer Sciences University of California BerkeleyCA94720 United States Center for Quantum Information Institute for Interdisciplinary Information Sciences Tsinghua University Beijing100084 China School of Physical and Mathematical Sciences Nanyang Technological University 637371 Singapore Complexity Institute Nanyang Technological University 637335 Singapore Centre for Quantum Technologies National University of Singapore 3 Science Drive 2 117543 Singapore

Quantum memory - the capacity to store and faithfully recover unknown quantum states - is essential for quantum-enhanced technology. There is thus a pressing need for operationally meaningful means to benchmark candidate memories across diverse physical platforms. Here we introduce a universal benchmark distinguished by its relevance across multiple key operational settings, exactly quantifying (1) the memory's robustness to noise, (2) the number of noiseless qubits needed for its synthesis, (3) its potential to speed up statistical sampling tasks, and (4) performance advantage in non-local games beyond classical limits. The measure is analytically computable for low-dimensional systems and can be efficiently bounded in experiment without tomography. We thus illustrate quantum memory as a meaningful resource, with our benchmark reflecting both its cost of creation and what it can accomplish. We demonstrate the benchmark on the five-qubit IBM Q hardware, and apply it to witness efficacy of error-suppression techniques and quantify non-Markovian noise. We thus present an experimentally accessible, practically meaningful, and universally relevant quantifier of a memory's capability to preserve quantum advantage. Copyright © 2019, The Authors. All rights reserved.

关键词： Benchmarking