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Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 v and 4500 v SiC Power MOSFETs

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IEEE Transactions on Nuclear science 2025年

作者： Sengupta, A. Martinella, C. Ball, D.R. Niskanen, K. Senarath, A.S. Islam, S. Harris, P.M. Hutson, J.M. Osheroff, J.M. Sternberg, A.L. Kettunen, H. Kosier, S.L. Grossner, U. Javanainen, A. Galloway, K.F. Schrimpf, R.D. Witulski, A.F. Zürich8092 Switzerland Vanderbilt University Interdisciplinary Materials Science Program NashvilleTN37235 United States Lipscomb University Electrical and Computer Engineering Department NashvilleTN37204 United States NASA/GSFC Code 561.4 GreenbeltMD20771 United States Vanderbilt University Electrical Engineering and Computer Science Department B 351825 NashvilleTN37235 United States University of Jyväskylä Department of Physics Jyväskylä40014 Finland

Experimental heavy-ion responses of two variants of SiC power MOSFETs are evaluated. The devices have similar epitaxial thickness but different doping. The higher doping in the epitaxial region results in lower breakdown voltage, and typically leads to a lower threshold drain voltage at which single-event leakage current (SELC) occurs. Furthermore, the heavy-ion-induced SELC degradation in the drain and gate currents of the SiC MOSFETs exhibit a strong dependence on the heavy-ion's angle of incidence. The devices' behavior significantly alters when irradiated with heavy-ions at different incident angles under the same fixed bias and total fluence, as also confirmed by 3-D Technology computer Aided Design (TCAD) simulations. © 1963-2012 IEEE.

关键词： Power MOSFET

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Integrating 2D Magnets for Quantum Devices: from materials and Characterization to Future Technology

arXiv

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arXiv 2024年

作者： Zhong, Han Plummer, Douglas Z. Lu, Pengcheng Li, Yang Leger, Polina A. Wu, Yingying Department of Electrical and Computer Engineering University of Florida GainesvilleFL32611 United States Department of Materials Science and Engineering University of Florida GainesvilleFL32611 United States

The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-dimensional magnetism. With dimensions reduced, research has delved into facile electric control of 2D magnetism, high-quality heterostructure design, and new device functionality. These atomically thin magnetic materials have spawned a burgeoning field known as 2D spintronics, holding immense promise for future quantum technologies. In this review, we comprehensively survey the current advancements in 2D magnet-based quantum devices, accentuating their role in manifesting exotic properties and enabling novel functionalities. Topological states, spin torques, voltage control of magnetic anisotropy, strain engineering, twistronics and designer interface will be discussed. Furthermore, we offer an outlook to guide their development in future CMOS and quantum hardware paradigms. © 2024, CC BY.

关键词： Magnetic anisotropy

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Microscale concave interfaces for reflective displays generate concentric rainbows

Microscale concave interfaces for reflective displays genera...

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Frontiers in Optics, FiO 2022

作者： Rada, Jacob Hu, Haifeng Zhou, Lyu Zeng, Jing Song, Haomin Zeng, Xie Shimul, Shakil Fan, Wen Zhan, Qiwen Li, Wei Wu, Limin Gan, Qiaoqiang Department of Electrical Engineering The State University of New York at Buffalo BuffaloNY14260 United States School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology Shanghai20093 China Department of Materials Science Fudan University Shanghai200433 China Department of Chemical Engineering Texas Tech University LubbockTX79409 United States School of Materials Science and Engineering Hubei University Hubei Wuhan430062 China

Structural color utilizing microscale concave interfaces has been reported in several publications, but the explanation is currently incomplete. Within this work, the physics behind this coloration technique is clarif...

ISBN: (纸本)9781557528209

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Periodic phase diagrams in micromagnetics with an eigenvalue solver

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IEEE Transactions on Magnetics 2025年

作者： Ai, Fangzhou Lin, Zhuonan Duan, Jiawei Lomakin, Vitaliy University of California Department of Electrical and Computer Engineering San DiegoCA92093 United States University of California Center for Memory and Recording Research San DiegoCA92093 United States University of California Program in Materials Science and Engineering San Diego92093 United States

This work introduces an approach to compute periodic phase diagram of micromagnetic systems by solving a periodic linearized Landau-Lifshitz-Gilbert (LLG) equation using an eigenvalue solver with the Finite Element Method formalism. The linear operator in the eigenvalue problem is defined as a function of the periodic phase-shift wave vector. The dispersion diagrams are obtained by solving the eigenvalue problem for complex eigenfrequencies and corresponding eigenstates for a range of prescribed wave vectors. The presented approach incorporates a calculation of the periodic effective field, including the exchange and magnetostatic field components. The approach is general in that it allows 3D problems to be handled with any 1D, 2D, and 3D periodicities. The ability to calculate periodic diagrams provides insights into the spin wave propagation and localized resonances in complex micromagnetic structures. © 1965-2012 IEEE.

关键词： Spin waves

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Surface phase diagram of CsSnI3 from first-principles calculations

arXiv

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arXiv 2024年

作者： Li, Kejia Khamdang, Chadawan Wang, Mengen Department of Electrical and Computer Engineering State University of New York at Binghamton BinghamtonNY13902 United States Materials Science and Engineering Program State University of New York at Binghamton BinghamtonNY13902 United States

CsSnI3 is widely studied as an environmentally friendly Pb-free perovskite material for optoelectronic device applications. To further improve material and device performance, it is important to understand the surface structures of CsSnI3. We generate surface structures with various stoichiometries, perform density functional theory calculations to create phase diagrams of the CsSnI3 (001), (110), and (100) surfaces, and determine the most stable surfaces under a wide range of Cs, Sn, and I chemical potentials. Under I-rich conditions, surfaces with Cs vacancies are stable, which lead to partially occupied surface states above the valence band maximum. Under I-poor conditions, we find the stoichiometric (100) surface to be stable under a wide region of the phase diagram, which does not have any surface states and can contribute to long charge carrier lifetimes. Consequently, the I-poor (Sn-rich) conditions will be more beneficial to improve the device performance. © 2024, CC BY-NC-SA.

关键词： Tin compounds

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Atom Identification in Bilayer Moiré materials with Gomb-Net

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Nano letters 2025年第23期25卷 2025 Jun 2页

作者： Austin C Houston Sumner B Harris Hao Wang Yu-Chuan Lin David B Geohegan Kai Xiao Gerd Duscher Department of Materials Science and Engineering The University of Tennessee Knoxville Tennessee 37996 United States. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge Tennessee 37831 United States. Min H. Kao Department of Electrical Engineering and Computer Science The University of Tennessee Knoxville Tennessee 37916 United States. Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu City 300 Taiwan.

Moiré patterns in van der Waals bilayer materials complicate the analysis of atomic-resolution images, hindering the atomic-scale insight typically attainable with scanning transmission electron microscopy. Here, we report a method to detect the positions and identities of atoms in each of the individual layers that compose twisted bilayer heterostructures. We developed a deep learning model, Gomb-Net, which identifies the coordinates and atomic species in each layer, deconvoluting the moiré pattern. This enables layer-specific mapping of atomic positions and dopant distributions, unlike other commonly used segmentation models which struggle with moiré-induced complexity. Using this approach, we explored the Se atom substitutional site distribution in a twisted fractional Janus WS-WSSe heterostructure and found that layer-specific implantation sites are unaffected by the moiré pattern's local energetic or electronic modulation. This advancement enables atom identification within material regimes where it was not possible before, opening new insights into previously inaccessible material physics.

关键词： machine learning moiré materials scanning transmission electron microscopy twisted bilayers

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Improving Candle Direction Classification in Forex Market Using Support Vector Machine with Hyperparameters Tuning 7

Improving Candle Direction Classification in Forex Market Us...

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7th International Conference on Informatics and Computing, ICIC 2022

作者： Oetama, Raymond Sunardi Heryadi, Yaya Lukas Suparta, Wayan Computer Science Bina Nusantara University Jakarta Indonesia Binus Graduate Program Computer Science Bina Nusantara University Computer Science Department Jakarta Indonesia Cognitive Engineering Research Group Universitas Katolik Indonesia Atma Jaya Jakarta Indonesia Institut Teknologi Nasional Faculty of Industrial Technology Department of Electrical Engineering Yogyakarta Indonesia

ISBN: (纸本)9798350345711

Foreign Exchange market is the world's largest daily currency turnover. Two of the popular currencies Euro and Pound sterling traded against the US Dollar. Since the Russia and Ukraine war started in February 2022, their exchange rates decrease to the lowest rate ever. Even though the general trend is bearish, several daily candles increase for some days making challenges for forex analysts. To solve this problem, classification is applied. The data is labeled downward and upward. By utilizing Linear Kernel and Radial Basis Function (RBF) Kernel-based Support Vector Machines (SVM), the candle direction can be classified and optimized by tuning the Hyperparameters. The accuracy of candle direction classifications are highly improved. After tuning, in general, classification using Linear Models can outperform RBF Models. The best accuracy found on the Pound sterling against US Dollar by using the Linear model is 98.11% and the accuracy becomes 100% on data testing at a ratio of 70:30. Whilst for the Euro against the US Dollar, the best accuracy found the same for both Linear and RBF models on a ratio of 80:20 at 97.53%. However, on data testing, it decreases to 94.51% for Linear Model and 93.41% using RBF Model. The implication of this study is SVM can successfully classify candle direction on pairs in the Forex Market that are affected by a big event that comes for such a long period as long as the hyperparameter is tuned. © 2022 IEEE.

关键词： Support vector machines

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Defect formation in CsSnI3 from Density Functional Theory and Machine Learning

arXiv

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arXiv 2024年

作者： Khamdang, Chadawan Wang, Mengen Department of Electrical and Computer Engineering State University of New York at Binghamton BinghamtonNY13902 United States Materials Science and Engineering Program State University of New York at Binghamton BinghamtonNY13902 United States

Sn-based perovskites as low-toxicity materials are actively studied for optoelectronic applications. However, their performance is limited by p-type self-doping, which can be suppressed by substitutional doping on the cation sites. In this study, we combine density functional theory (DFT) calculations with machine learning (ML) to develop a predictive model and identify the key descriptors affecting formation energy and charge transition levels of the substitutional dopants in CsSnI3. Our DFT calculations create a dataset of formation energies and charge transition levels and show that Y, Sc, Al, Zr, Nb, Ba, and Sr are effective dopants that pin the Fermi level higher in the band gap, suppressing the p-type self-doping. We explore ML algorithms and propose training a random forest regression model to predict the defect formation properties. This work shows the predictive capability of combining DFT with machine learning and provides insights into the important features that determine the defect formation energetics. © 2024, CC BY-NC-SA.

关键词： Perovskite

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Critical Factors of Immersive Learning in Higher Education: A Systematic Literature Review 10

Critical Factors of Immersive Learning in Higher Education: ...

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10th International Conference on ICT for Smart Society, ICISS 2023

作者： Sunardi Meyliana Ramadhan, Arief Rosmansyah, Yusep Bina Nusantara University BINUS Graduate Program Doctor of Computer Science Computer Science Department Jakarta Indonesia School of Information System Bina Nusantara University Information System Departement Jakarta Indonesia School of Computing Telkom University Bandung Indonesia School of Electrical Engineering and Informatics Bandung Institute of Technology Bandung Indonesia

ISBN: (纸本)9798350339543

Immersive learning has gained significant attention with the rising trend of spatial computing, particularly in the after-pandemic era. Numerous research has explored the potential of immersive learning in higher education, primarily on the educational sector. However, prior research has frequently focused too narrowly on the effects of technology and neglected to address the crucial element influencing successful immersive learning in higher education. This study seeks to pinpoint the crucial element contributing to the development of immersive learning experiences. The methodology uses a systematic literature review (SLR) from 2018 up to 2023 to investigate the critical factors of immersive Learning in Higher Education. From the 728 papers initially retrieved, 274 were considered potential candidates, and ultimately, 86 articles were selected based on their relevance to the research question. The results reveal that the critical factors include learning design, technology, immersion, engagement, interactivity, and usability. Academic interests will benefit from this SLR's consequences as institutions create models for designing suitable immersive learning, especially within the context of higher education. © 2023 IEEE.

关键词： E-learning

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Multiple concentric rainbows induced by microscale concave interfaces for reflective displays

Multiple concentric rainbows induced by microscale concave i...

引用

CLEO: science and Innovations, S and I 2022

We unambiguously define the physics behind structural coloration induced by microscale concave interfaces using both white light, and single wavelength illumination. © Optica Publishing Group 2022, © 2022 Th...

ISBN: (纸本)9781557528209

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