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IEEE Photonics Conference (IPC)

作者： S. Wang B. Meehan T. Hawkins J. Ballato P. Dragic Department of Electrical and Computer Engineering University of Illinois Urbana-Champaign Urbana USA Department of Materials Science and Engineering Clemson University Anderson USA

Through thermal annealing experiments, the impact of the cladding and draw conditions on the observed Brillouin gain spectra in acoustically anti-guiding optical fibers is presented. The draw conditions can be used to...

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Evaluating the thermal performance of perovskite SrSnO3field effect transistors 22

Evaluating the thermal performance of perovskite SrSnO3field...

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22nd InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2023

作者： Bista, Bivek Golani, Prafful Liu, Fengdeng Truttmann, Tristan Pavlidis, Georges Centrone, Andrea Jalan, Bharat Koester, Steven University of Connecticut Department of Mechanical Engineering StorrsCT06269 United States University of Minnesota Department of Electrical and Computer Engineering MinneapolisMN55455 United States University of Minnesota Department of Chemical Engineering and Materials Science MinneapolisMN55455 United States National Institute of Standards and Technology Physical Measurement Laboratory GaithersburgMD20899 United States

ISBN: (纸本)9798350321661

Given the ever increasing, global electricity consumption, improving the efficiency and reliability of high-power electronics is of paramount importance. Ultra-wide band gap (> 3.4 eV) semiconductors have shown the potential to be used in the next generation of power electronics due to their high breakdown field and mobility. Specifically, high-quality growth of doped strontium stannate perovskite-oxide (SSO) has been recently demonstrated. The thermal properties of this novel material, however, have not been fully investigated and could be the limiting factor (excessive junction temperatures) to maximize device performance. In this study, high resolution (approx mathbf{410} mathbf{nm}) transient thermoreflectance imaging (TTI) is used to obtain temperature maps of SSO two-terminal devices with varying channel width (mathbf{10} boldsymbol{mu} mathbf{m} to mathbf{20} boldsymbol{mu} mathbf{m}). The results show that the device thermal resistance increases by approx mathbf{21} {%} due to the increase in thermal spreading resistance with channel width. The observed trend is further confirmed via transient thermal analysis where the thermal time constant is shown to increase from mathbf{20}.mathbf{9} boldsymbol{mu}mathbf{s} to mathbf{29}.mathbf{9} boldsymbol{mu}mathbf{s}. Overall, the active layer thicknesses and device geometry (length and width), must be carefully considered to improve device performance and lifetime. © 2023 IEEE.

关键词： Perovskite

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Cutting corners to suppress high-order modes in Mie resonator arrays

arXiv

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arXiv 2023年

作者： Haddadin, Zaid Khan, Shahrose Poulikakos, Lisa V. Department of Electrical & Computer Engineering UC San Diego United States Department of Mechanical & Aerospace Engineering UC San Diego United States Materials Science & Engineering Program UC San Diego United States

Mie resonators as lattice resonant metasurfaces have the capability to produce structural colour. However, design criteria for these metasurfaces are still being investigated. In this work, we numerically examine how the two-dimensional nanostructure shape in a lattice array affects the colorimetric response of the metasurface under linearly polarised light excitation. First, the transformation from a square-shaped to rectangle-shaped nanostructure array resulted in polarisation-sensitive metasurfaces with colorimetric outputs bound along a line on the CIE 1931 2-degree Standard Observer colour space. The bounds of the colorimetry line were tuneable to any desired chromatic range. Second, the removal of the corners in square- or rectangle-shaped nanostructures to create t-shaped nanostructure arrays displayed a dampening effect on the high-order resonance. Finally, we analytically determined that the colour saturation could increase when moving from rectangle-shaped to t-shaped nanostructure arrays. From these results, we present two design guidelines for lattice resonant metasurfaces: (1) Constructing the nanostructure to support fundamental resonances at different wavelengths enables two-colour-bound movement when excited by successive angles of linearly polarised light;(2) Removing portions of the nanostructure that only support high-order resonances dampens these modes while maintaining support for fundamental resonances. These results present first-principles guidelines for engineering nanoparticles in lattice resonant metasurfaces, offering a new toolbox for polarised-light sensing and colorimetric applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Nanostructures

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Highly Flexible Piezoelectric Pressure Sensor at Extremely High-Temperature Range Using Ultrawide-Bandgap III-N Thin Films

Highly Flexible Piezoelectric Pressure Sensor at Extremely H...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Nam-In Kim Miad Yarali Muhammad Aqib Jae-Hyun Ryou Department of Mechanical Engineering Texas Center for Superconductivity at UH Advanced Manufacturing Institute University of Houston USA Materials Science and Engineering Program University of Houston USA Department of Electrical and Computer Engineering University of Houston USA

Pressure monitoring in extreme conditions, such as in industrial, aerospace, and radioactive atmosphere, is crucial. Our focus is on developing and researching piezoelectric sensors that are highly flexible for detecting gas pressures at extremely high temperatures. We develop the flexible device using epitaxial III -nitride film, which is single-crystalline, by layer-transfer method. The sensor shows a sensitive and stable operation for extended periods. We use software simulation and relevant formulas to support our experimental findings.

关键词： Temperature sensors Pressure sensors X-ray scattering Sensor phenomena and characterization Software Semiconductor process modeling III-V semiconductor materials

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Strong long-wave infrared optical response in a topological semiconductor with a Mexican-hat band structure

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Physical Review B 2025年第8期111卷 085101-085101页

作者： Mark J. Polking Haowei Xu Raman Sankar Kevin Grossklaus Ju Li Advanced Materials and Microsystems Group Massachusetts Institute of Technology Lincoln Laboratory Lexington Massachusetts 02421 USA Department of Nuclear Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Institute of Physics Academia Sinica Taipei 11529 Taiwan Department of Electrical and Computer Engineering Tufts University Medford Massachusetts 02155 USA Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA

Light sources and photodetectors operating in the far- to midinfrared (FIR/MIR) band (8–12 µm, 0.15–0.1 eV) remain relatively poorly developed compared to their counterparts operating in the visible and near-infrared ranges, despite extensive application potential for thermal imaging, standoff sensing, and other technologies. This is attributable in part to the lack of narrow-gap materials (<0.1 eV) with high optical gain and absorption. In this work, a narrow-gap semiconductor, Pb0.7Sn0.3Se, is demonstrated to exhibit an optical response >10× larger than that of HgxCd1−xTe (MCT), the dominant material for FIR/MIR photodetectors. A previous theoretical investigation indicated that chalcogen p and metal d band inversion in this material creates a Mexican hat band structure (MHBS), which results in a dramatic increase in the joint density of states at the optical transition edge compared to typical semiconductors. This prediction is experimentally validated here using single-crystal specimens of Pb0.7Sn0.3Se measured using temperature-dependent spectroscopic ellipsometry over a wavelength range 1.7–20 µm (0.73–0.062 eV). These measurements demonstrate a large enhancement in extinction coefficient and refractive index, which are characteristic of a MHBS in the vicinity of the absorption edge, in agreement with theoretical predictions. The realization of topological semiconductors with a MHBS is expected to lead to high-efficiency detectors operating in the FIR/MIR range.

关键词： Spectroscopic ellipsometry

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β-Ga2O3 Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

arXiv

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arXiv 2023年

作者： Dhara, Sushovan Kalarickal, Nidhin Kurian Dheenan, Ashok Rahman, Sheikh Ifatur Joishi, Chandan Rajan, Siddharth Department of Electrical and Computer Engineering The Ohio State University United States Department of Materials Science and Engineering The Ohio State University United States

β-Ga2O3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga2O3 vertical power devices. Copyright © 2023, The Authors. All rights reserved.

关键词： Schottky barrier diodes

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Cavity-Enhanced 2D Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators

Cavity-Enhanced 2D Quantum Emitters Deterministically Integr...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Parto, Kamyar Azzam, Shaimaa Lewis, Nicholas Patel, Sahil Umezawa, Sammy Watanabe, Kenji Taniguchi, Takashi Moody, Galan Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States California Nanosystems Institute University of California Santa BarbaraCA93105 United States Research Center for Functional Materials National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan International Center for Materials Nanoarchitectures National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan

ISBN: (纸本)9781957171258

A new platform for position and polarization aligned 2D single-photon emitter integration within background-free silicon-nitride microring resonator is presented. Emitters achieve a cavity-enhanced coupling efficiency of 46±4%, exceeding previous demonstration by over an order-of-magnitude. © Optica Publishing Group 2023 © 2023 The Author(s)

关键词： Silicon nitride

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Enhanced Triboelectricity Through Visible-Light-Induced Surface Charges in Bto-Polymer Hybrid for Coexistence Solar-Mechanical Energy Harvesting

SSRN

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SSRN 2024年

作者： Lu, Wanheng Pan, Xinglong Ong, Wei Li Zeng, Kaiyang Ho, Ghim Wei Department of Electrical and Computer Engineering National University of Singapore 117583 Singapore Department of Mechanical Engineering National University of Singapore 117576 Singapore Department of Materials Science and Engineering National University of Singapore 117575 Singapore

The exploration of hybrid composites holds great promise in the pursuit of synergistic energy-harvesting solutions, providing an efficient approach to tap into multiple energy sources. One striking example is the BTO (BaTiO3)-polymer hybrid where its high dielectric constant and the piezo-/ferroelectricity are leveraged to improve the triboelectricity of the polymer-based triboelectric nanogenerator (TENG). Beyond this, the BTO also exhibits a photoactive nature, which, until now, has not been exploited to enhance triboelectricity. In this study, a facile method to exploit BTO’s photoresponses in a BTO-polymer hybrid is reported, where surface states present in BTO nanoparticles enable visible spectrum absorption, and the interfaces are designed to facilitate charge spatial separation. Upon visible light illumination, surface charges are generated on the BTO-polymer hybrid, significantly enhancing the photo-induced charge electrification, which in turn boosts the TENG output. These findings demonstrate the possibility of simultaneously harvesting solar and mechanical energies in TENGs using ceramic-polymer hybrids. Additionally, the study employs multiple advanced Scanning Probe Microscopy (SPM) techniques to elucidate the roles of each component and interface in energy harvesting, shedding light on the functional material design. This work not only broadens the variety of energy sources for TENGs but also addresses the growing demand for sustainable and adaptable methods of power generation. © 2024, The Authors. All rights reserved.

关键词： Image enhancement

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Energy Efficient Stochastic Signal Manipulation in Superparamagnetic Tunnel Junctions via Voltage-Controlled Exchange Coupling

arXiv

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arXiv 2024年

作者： Jia, Qi Benally, Onri J. Zink, Brandon Zhang, Delin Lv, Yang Liang, Shuang Lyu, Deyuan Chen, Yu-Chia Yang, Yifei Huang, Yu Han Wang, Jian-Ping Department of Electrical and Computer Engineering University of Minnesota MinneapolisMN55455 United States Department of Chemical Engineering and Materials Science University of Minnesota MinneapolisMN55455 United States Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque (STT) and spin-orbit torque (SOT), often require substantial power. Here, we introduce the voltage-controlled exchange coupling (VCEC) mechanism, enabling switching between antiparallel and parallel states in sMTJs with an ultralow power consumption of only 40 nW, approximately two orders of magnitude lower than conventional STT-based sMTJs. This mechanism yields a sigmoid-shaped output response, making it ideally suited for neuromorphic computing applications. Furthermore, we validate the feasibility of integrating VCEC with the SOT current control, offering an additional dimension for magnetic state manipulation. This work marks the first practical demonstration of VCEC effect in sMTJs, highlighting its potential as a low-power control solution for probabilistic bits in advanced computing systems. Copyright © 2024, The Authors. All rights reserved.

关键词： Stochastic systems

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