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Light-driven single-cell rotational adhesion frequency assay

eLight 2022年第1期2卷 154-164页

作者： Yaoran Liu Hongru Ding Jingang Li Xin Lou Mingcheng Yang Yuebing Zheng Department of Electrical and Computer Engineering The University of Texas at AustinAustinTX 78712USA Walker Department of Mechanical Engineering The University of Texas at AustinAustinTX 78712USA Materials Science&Engineering Program and Texas Materials Institute The University of Texas at AustinAustinTX 78712USA School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Beijing National Laboratory for Condensed Matter Physics and Laboratory of Soft Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808GuangdongChina Department of Biomedical Engineering The University of Texas at AustinAustinTX 78712USA

The interaction between cell surface receptors and extracellular ligands is highly related to many physiological processes in living *** techniques have been developed to measure the ligand-receptor binding kinetics at the single-cell ***,few techniques can measure the physiologically relevant shear binding affinity over a single cell in the clinical ***,we develop a new optical technique,termed single-cell rotational adhesion frequency assay(scRAFA),that mimics in vivo cell adhesion to achieve label-free determination of both homogeneous and heterogeneous binding kinetics of targeted cells at the subcellular ***,the scRAFA is also applicable to analyze the binding affinities on a single cell in native human *** its superior performance and general applicability,scRAFA is expected to find applications in study of the spatial organization of cell surface receptors and diagnosis of infectious diseases.

关键词： diagnosis kinetics rotational

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A Composition-Based Predictive Model for the Transformation Strain of NiTi Shape Memory Alloys

SSRN

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SSRN 2024年

作者： Zadeh, Sina Hossein Brown, Timothy D. Qian, Xiaoning Karaman, Ibrahim Arroyave, Raymundo Department of Materials Science & Engineering Texas A&M University United States Sandia National Laboratories Department of Electrical & Computer Engineering Texas A&M University United States

This study presents a predictive model to estimate transformation strain in NiTi Shape Memory Alloys (SMAs) based on alloy composition. Utilizing lattice deformation theory, we computed theoretical transformation strain and compiled a comprehensive dataset of 3024 entries, covering various alloy compositions, deformation modes, and orientations. The model, built using the CatBoost gradient boosting algorithm, achieved an R2 score of 0.954 and a mean absolute error of 0.608% during validation. Deformation types, such as tension and compression, emerged as the dominant predictor, accounting for over half of the predictive power, highlighting the anisotropic and asymmetric behavior of SMAs. A significant correlation was identified between the λ2 parameter (the middle eigenvalue of the non-rotational part of the deformation matrix) and transformation strain, showing that greater phase compatibility corresponds to reduced transformation strain. The model’s precision across different alloys and deformation modes makes it a valuable tool for predicting transformation strain in NiTi SMAs. This work enhances the understanding of the relationship between composition and phase transformation characteristics in SMAs, offering a practical approach to designing and optimizing these materials for applications such as medical devices and solid-state actuation systems. © 2024, The Authors. All rights reserved.

关键词： Titanium alloys

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Improving the operational stability of perovskite solar cells with cesium-doped graphene oxide interlayer

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Journal of Energy Chemistry 2024年第9期96卷 483-490页

作者： Masaud Almalki Katerina Anagnostou Konstantinos Rogdakis Felix T.Eickemeyer Mostafa Othman Minas M.Stylianakis Dimitris Tsikritzis Anwar Q.Alanazi Nikolaos Tzoganakis Lukas Pfeifer Rita Therisod Xiaoliang Mo Christian M.Wolff Aïcha Hessler-Wyser Shaik M.Zakeeruddin Hong Zhang Emmanuel Kymakis Michael Grätzel Laboratory of Photonics and Interfaces École Polytechnique Fédérale de Lausanne(EPFL)Lausanne 1015Switzerland Department of Electrical and Computer Engineering Hellenic Mediterranean UniversityHeraklionCrete 71410Greece Institute of Electrical and Microengineering(IEM)Photovoltaics and Thin-Film Electronics Laboratory(PV-Lab) École Polytechnique Fédérale de Lausanne(EPFL)Neuchâtel 2000Switzerland Department of Nursing Faculty of Health SciencesHellenic Mediterranean UniversityCrete 71410Greece Centre Interdisciplinaire de Microscopie Electronique École Polytechnique Fédérale de Lausanne(EPFL)Lausanne 1015Switzerland Future Energy Technology Institute King Abdulaziz City for Science and Technology(KACST)P.O.Box 6086Riyadh 11442Saudi Arabia State Key Laboratory of Photovoltaic Science and Technology Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsDepartment of Materials ScienceFudan UniversityShanghai 200433China

Perovskite solar cells(PSCs)have made great advances in terms of power conversion efficiency(PCE),yet their subpar stability continues to hinder their *** interface between the perovskite layer and the charge-carrier transporting layers plays a crucial role in undermining the stability of *** this work,we propose a strategy to stabilize high-performance PSCs with PCE over 23%by introducing a cesium-doped graphene oxide(GO-Cs)as an interlayer between the perovskite and hole-transporting *** GO-Cs treated PSCs exhibit excellent operational stability with a projected T80(the time where the device PCE reduces to 80%of its initial value)of 2143 h of operation at the maximum powering point under one sun illumination.

关键词： Perovskite solar cells Doped graphene oxide Graphene related material Long-term operational stability

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Effect of impurity and radiation defects on the scattering of normal and fluctuation carriers in YBa2Cu3O7–δ and Y1–zPrzBa2Cu3O7–δ single crystals

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Fizika Nizkikh Temperatur 2024年第11期50卷 1128-1138页

作者： Azarenkov, N.A. Khadzhai, G.Ya. Gevorkyan, E.S. Goulatis, I. Chroneos, A. Feher, A. Komisarov, A.O. Vragov, O.Yu. Kovrigin, V.A. Vovk, R.V. V. N. Karazin Kharkiv National University Kharkiv61022 Ukraine Institute of Solid State Physics Materials Science and Technologies NSC-KIPT Kharkiv61108 Ukraine Ukrainian State University of Railway Transport Kharkiv61050 Ukraine Casimir Pulaski Radom University Radom Poland Department of Electrical and Computer Engineering University of Thessaly Volos38333 Greece Department of Materials Imperial College London LondonSW7 2BP United Kingdom Centre of Low Temperature Physics Faculty of Science P. J. Safarik University Kosice041 54 Slovakia

The effect of medium fluences (from 1019 е/cm2 to 1020 е/cm2) of fast electron irradiation or the change in the praseodymium concentration in the range 0.0 ≤ z ≤ 0.5 on the excess conductivity of optimally oxygen-doped YBa2Cu3O7–δ single crystals has been investigated. Irradiation leads to the appearance of a significant number of defects that cause a decrease in anisotropy, an appreciable increase in phonon scattering, reduction of Tc, and broadening of the superconducting transition. Under the conditions specified, the temperature dependence of electrical resistivity is approximated with high accuracy by the charge carriers’ scattering on defects and phonons, and fluctuating conductivity in the Lawrence–Doniach model. It was determined that at fluences 0 ≤ Ф ≤ 6.5·1019 е/cm2, the value of the transverse coherence length ξс(0) increases with an increase of Ф by about three times or more than four times as the content of praseodymium in the sample increases to z ≈ 0.42. In both cases, the 2D–3D crossover point shifts upward in temperature. In contrast to the case of irradiation with low fluences (Ф ≤ 1019 е/cm2) or doping with praseodymium up to concentrations z ≤ 0.39, irradiation with medium fluences and doping with praseodymium at higher concentrations leads to a nonmonotonic dependence of the transverse coherence length ξс(0) on the irradiation fluence, with characteristic maxima at Ф ~ (7–8)·1019 е/cm2 or z ≈ 0.42, which may be due to the general suppression of the superconducting characteristics. © N. A. Azarenkov, G. Ya. Khadzhai,·E. S. Gevorkyan, I. Goulatis, A. Chroneos, A. Feher, A. O. Komisarov, O. Yu. Vragov, V. A. Kovrigin, and R. V. Vovk, 2024.

关键词： Phonon scattering

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Data-Driven Study of Composition-Dependent Phase Compatibility in Niti Shape Memory Alloys

SSRN

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SSRN 2024年

作者： Zadeh, Sina Hossein Cakirhan, Cem Khatamsaz, Danial Broucek, John Brown, Timothy D. Qian, Xiaoning Karaman, Ibrahim Arroyave, Raymundo Department of Materials Science & Engineering Texas A&M University United States Sandia National Laboratories Department of Electrical & Computer Engineering Texas A&M University United States

The martensitic transformation in NiTi-based Shape Memory Alloys (SMAs) provides a basis for shape memory effect and superelasticity, thereby enabling applications requiring solid-state actuation and large recoverable shape changes upon mechanical load cycling. In order to tailor the transformation to a particular application, the compositional dependence of properties in NiTi-based SMAs, such as martensitic transformation temperatures and hysteresis, has been exploited. However, the compositional design space is large and complex, and experimental studies are expensive. In this work, we develop an interpretable piecewise linear regression model that predicts the λ2 parameter, a measure of compatibility between austenite and martensite phases, and an (indirect) factor that is well-correlated with martensitic transformation hysteresis, based on the chemical features derived from the alloy composition. The model is capable of predicting, for the first time, the type of martensitic transformation for a given alloy chemistry. The proposed model is validated by experimental data from the literature as well as in-house measurements. The results show that the model can effectively distinguish between B19 and B19' regions for any given composition in NiTi-based SMAs and accurately estimate the λ2 parameter. © 2024, The Authors. All rights reserved.

关键词： Martensitic transformations

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In Situ Iodide Passivation Toward Efficient CsPbI_(3) Perovskite Quantum Dot Solar Cells

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Nano-Micro Letters 2023年第10期15卷 28-39页

作者： Junwei Shi Ben Cohen‑Kleinstein Xuliang Zhang Chenyu Zhao Yong Zhang Xufeng Ling Junjun Guo Doo‑Hyun Ko Baomin Xu Jianyu Yuan Wanli Ma Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055People’s Republic of China Institute of Functional Nano&Soft Materials(FUNSOM) Soochow University199 Ren‑Ai RoadSuzhou Industrial ParkSuzhou 215123People’s Republic of China Department of Electrical and Computer Engineering University of British Columbia2329 West MallVancouverBC V6T 1Z4Canada Department of Chemistry Sungkyunkwan UniversitySuwon 16419Republic of Korea Jiangsu Key Laboratory of Advanced Negative Carbon Technologies Soochow University199 Ren‑Ai RoadSuzhou Industrial ParkSuzhou 215123People’s Republic of China Jiangsu Key Laboratory for Carbon‑Based Functional Materials&Devices Soochow University199 Ren‑Ai RoadSuzhou Industrial ParkSuzhou 215123People’s Republic of China

All-inorganic CsPbI_3 quantum dots(QDs) have demonstrated promising potential in photovoltaic(PV) applications. However, these colloidal perovskites are vulnerable to the deterioration of surface trap states, leading to a degradation in efficiency and stability. To address these issues, a facile yet effective strategy of introducing hydroiodic acid(HI) into the synthesis procedure is established to achieve high-quality QDs and devices. Through an in-depth experimental analysis, the introduction of HI was found to convert PbI_2 into highly coordinated [PbI_m]~(2-m), enabling control of the nucleation numbers and growth kinetics. Combined optical and structural investigations illustrate that such a synthesis technique is beneficial for achieving enhanced crystallinity and a reduced density of crystallographic defects. Finally, the effect of HI is further reflected on the PV performance. The optimal device demonstrated a significantly improved power conversion efficiency of 15.72% along with enhanced storage stability. This technique illuminates a novel and simple methodology to regulate the formed species during synthesis, shedding light on ofurther understanding solar cell performance, and aiding the design of future novel synthesis protocols for high-performance optoelectronic devices.

关键词： CsPbI_(3)perovskite quantum dots In situ passivation Surface trap states Perovskite solar cell

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UVC optoelectronics based on AlGaN on AlN single crystal substrates

UVC optoelectronics based on AlGaN on AlN single crystal sub...

引用

2022 Compound Semiconductor Week, CSW 2022

作者： Reddy, Pramod Loveless, James Quinones-Garcia, Cristyan Khachariya, Dolar Kirste, Ronny Pavlidis, Spyridon Mecouch, Will Mita, Seiji Moody, Baxter Tweedie, James Kohn, Erhard Collazo, Ramon Sitar, Zlatko Adroit Materials CaryNC27518 United States North Carolina State University Department of Materials Science and Engineering RaleighNC27695 United States North Carolina State University Department of Electrical and Computer Engineering RaleighNC27695-7919 United States

ISBN: (数字)9781665453400

ISBN: (纸本)9781665453400

In this work, we report on recent advances in UVC emitters and detectors based on AlGaN on single crystal AlN substrates. We perform point defect management via chemical potential control and extended defect management via growth on low threading dislocation density single crystal AlN substrates and demonstrate reliable UVC LEDs at high power densities (>40 Wcm-2) on transparent AlN substrates and high gain (>300000) solar blind avalanche photodiodes with high quantum efficiency (>70%) and near ideal breakdown fields. We also report a comparison with devices on foreign substrates (sapphire) with those on native AlN substrates revealing a general improvement in performance by orders of magnitude. © 2022 IEEE.

关键词： Aluminum gallium nitride

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electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Optical nanotweezing with exotic light: from plasmons to supercavity modes [Invited]

Optical nanotweezing with exotic light: from plasmons to sup...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Justus C. Ndukaife Chuchuan Hong Department of Electrical Engineering and Computer Science Vanderbilt University Nashville TN USA Interdisciplinary Materials Science and Engineering Vanderbilt University Nashville TN USA

We report the next generation optical nanotweezer approaches employing plasmonic cavities and optical anapole states for the high throughput trapping and dynamic manipulation of nanoscale objects and biomolecules with... 详细信息

ISBN: (纸本)9781957171258

关键词： Diffraction limit Field enhancement High throughput optics Optical trapping Optical tweezers Photothermal effects

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FDAM: Filter-Dedicated Approximate Multiplier Design for Real-Time CNN Acceleration

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IEEE Transactions on computer-Aided Design of Integrated Circuits and Systems 2025年

作者： Nguyen, Kihwan Kim Xuan Truong Jeon, Dongsuk Lee, Hyuk-Jae Korea Republic of program Department of Electrical Engineering Seoul08826 Korea Republic of Inter-University Semiconductor Research Center Seoul National University Graduate School of Convergence Science and Technology Research Institute for Convergence Science Seoul08826 Korea Republic of Department of Electrical and Computer Engineering Seoul08826 Korea Republic of

Video super-resolution (VSR) is widely used in various high-definition applications, such as HDTVs and smartphones, requiring a dedicated upscaling technique for realtime full-HD generation. To reduce on-chip buffers for largesize output feature maps, a streaming VSR accelerator may employ an output stationary dataflow, leading to a large energy consumption caused by frequent filter switching. To mitigate this, we introduce a new filter-dedicated multiplier design for realtime VSR acceleration. We replace costly multipliers with adders, shifters, and multiplexers (MUXes), referred to as unified multiple constant multiplications (UMCM). The conventional UMCM, however, may incur considerable area/power overhead due to the unified topology constraint among different filter sets. To address this problem, we propose a new approximated MCM (AMCM) problem to relax the constraint and an approximate compatible graph synthesis (A-CGS) framework to efficiently solve AMCM by jointly searching for approximated filters and constructing a unified graph. Additionally, we suggest a lightweight finetuning method by freezing approximated filters and only finetuning biases, which can recover the original model’s accuracy within a few epochs. Experimental results with synthetic data demonstrate that AMCM reduces the area by up to 49.8%, 44.8%, and 40.3% when considering constant sets of 2, 4, and 8, respectively. Our designs with SR application achieve up to a 73.3% reduction in energy consumption. Experiments with the Set5 and Set14 datasets show that our model with bias correction achieves similar restoration performance compared to the eightbit models. © 1982-2012 IEEE.

关键词： Acceleration

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