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PBF-AMP-Onto: an ontology for powder bed fusion additive manufacturing processes 1

PBF-AMP-Onto: an ontology for powder bed fusion additive man...

1st International Workshop on Semantic materials science: Harnessing the Power of Semantic Web Technologies in materials science, SeMatS 2024

作者： Pour, Mina Abd Nikooie Tarafder, Prithwish Wiberg, Anton Li, Huanyu Moverare, Johan Lambrix, Patrick Department of Computer and Information Science Linköping University Linköping Sweden Swedish e-Science Research Centre Linköping University Linköping Sweden Department of Management and Engineering Linköping University Linköping Sweden Wallenberg Initiative Materials Science for Sustainability Linköping University Linköping Sweden Wallenberg AI Autonomous Systems and Software Program Linköping University Linköping Sweden

Additive manufacturing is an innovative production approach aimed at creating products that traditional techniques cannot produce with the desired quality and requirements. Throughout the additive manufacturing process, data is either used (such as materials properties, printer characteristics and settings) or generated (such as monitoring data during printing, slicing strategies setting parameters). However, managing such data with complex relationships remains a significant challenge in both research and industry in the additive manufacturing field. To address this issue, we developed a modular ontology that can be used as the basis for a framework that supports decision-making systems, facilitate semanticsaware data management, and enhance the understanding and optimization of additive manufacturing processes. In this paper we focus on one of the state-of-the-art additive manufacturing approaches, i.e., powder bed fusion. To show the use and the feasibility of our approach, we created a knowledge graph for an actual additive manufacturing experiment based on our ontology, and show how queries relevant to domain experts can be answered using this knowledge graph. © 2024 CEUR-WS. All rights reserved.

关键词： Ontology

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Absence of Weyl nodes in EuCd2As2 revealed by the carrier density dependence of the anomalous Hall effect

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Physical Review B 2024年第12期109卷 125202-125202页

作者： Yue Shi Zhaoyu Liu Logan A. Burnett Seokhyeong Lee Chaowei Hu Qianni Jiang Jiaqi Cai Xiaodong Xu Mo Li Cheng-Chien Chen Jiun-Haw Chu Department of Physics University of Washington Seattle Washington 98195 USA Department of Materials Science and Engineering University of Washington Seattle Washington 98195 USA Department of Physics University of Alabama at Birmingham Birmingham Alabama 35294 USA Department of Electrical and Computer Engineering University of Washington Seattle Washington 98195 USA

The antiferromagnetic layered compound EuCd2As2 is widely considered a leading candidate of ideal Weyl semimetals, featuring a single pair of Weyl nodes in its field-induced ferromagnetic state. Nevertheless, this view was recently challenged by an optical spectroscopy study, which suggested that it is a magnetic semiconductor. In this study, we successfully synthesized highly insulating EuCd2As2 crystals with carrier density reaching as low as 2×1015cm−3. The magnetotransport measurements revealed a progressive decrease of the anomalous Hall conductivity (AHC) by several orders of magnitude as the carrier density decreases. This behavior contradicts what is expected from the intrinsic AHC generated by the Weyl points, which is independent of carrier density as the Fermi level approaches the charge neutrality point. In contrast, the scaling relationship between AHC and longitudinal conductivity aligns with the characteristics of variable-range hopping insulators. Our results suggest that EuCd2As2 is a magnetic semiconductor rather than a topological Weyl semimetal.

关键词： Anomalous Hall effect Magnetotransport Topological materials Pnictides Weyl semimetal Magnetization measurements Resistivity measurements Susceptibility measurements

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Strain-Insensitive, Air-Stable Stretchable Carbon Nanotube-Based Synaptic Transistors Array via Direct Microfabrication for Neuromorphic Computing

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ACS nano 2025年第22期19卷 2025 May 30页

作者： Dingzhou Cui Zhiyuan Zhao Fugu Tian Wenbo Chen Mingrui Chen Max Zhou Xiaoqi Wu Jingxin Zhang Chongwu Zhou Ming Hsieh Department of Electrical and Computer Engineering University of Southern California Los Angeles California 90089 United States. Mork Family Department of Chemical Engineering and Materials Science University of Southern California Los Angeles California 90089 United States.

Stretchable synaptic transistors show great promise in mimicking brain activities in soft robotics and skin electronics applications. However, the fabrication of such device arrays on elastic substrates with high stability, throughput, and yield remains challenging. Here, we have developed an approach to fabricate stretchable synaptic transistors directly on elastic substrates, in which carbon nanotubes and SU-8 are used as channel and dielectric, respectively. This method employs a fully photolithography-based microfabrication process that operates at relatively low temperatures. The devices exhibit an average on-off ratio of 2 × 10 and show minimal degradation when stretched up to 40%. Single-pulse, paired-pulse, and repetitive-pulse responses are also demonstrated, showing their ability to work as artificial synapses. The devices exhibit a high linearity of ≤1 with 100 distinct conductance states in long-term plasticity and a dynamic range of 15. Furthermore, we conducted a handwritten digit recognition simulation, achieving a learning accuracy of over 90%. We believe our work can serve as a guide for developing high-performance stretchable synaptic devices for various applications.

关键词： SU-8 carbon nanotube microfabrication neuromorphic computing stretchable electronics synaptic transistor

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Mixed Delay/Nondelay Embeddings Based Neuromorphic Computing with Patterned Nanomagnet Arrays 9

Mixed Delay/Nondelay Embeddings Based Neuromorphic Computing...

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9th Annual IEEE International Conference on Rebooting Computing, ICRC 2024

作者： Ti, Changpeng Hassan, Usman Vatsavai, Sairam Sri McCarter, Margaret Vasdev, Aastha An, Jincheng Achinuq, Barat Welp, Ulrich Cheung, Sen-Ching Thakkar, Ishan G. Todd Hastings, J. Department of Electrical and Computer Engineering University of Kentucky LexingtonKY40506 United States Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Materials Science Division Argonne National Laboratory LemontIL60439 United States Department of Physics University of Kentucky LexingtonKY40506 United States

ISBN: (纸本)9798331541279

Patterned nanomagnet arrays (PNAs) have been shown to exhibit a strong geometrically frustrated dipole interaction. Some PNAs have also shown emergent domain wall dynamics. Previous works have demonstrated methods to physically probe these magnetization dynamics of PNAs to realize neuromorphic reservoir systems that exhibit chaotic dynamical behavior and high-dimensional nonlinearity. These PNA reservoir systems from prior works leverage echo state properties and linear/nonlinear short-term memory of component reservoir nodes to map and preserve the dynamical information of the input time-series data into nondelay spatial embeddings. Such mappings enable these PNA reservoir systems to imitate and predict/forecast the input time series data. However, these prior PNA reservoir systems are based solely on the nondelay spatial embeddings obtained at component reservoir nodes. As a result, they require a massive number of component reservoir nodes, or a very large spatial embedding (i.e., high-dimensional spatial embedding) per reservoir node, or both, to achieve acceptable imitation and prediction accuracy. These requirements reduce the practical feasibility of such PNA reservoir systems. To address this shortcoming, we present a mixed delay/nondelay embeddings-based PNA reservoir system. Our system uses a single PNA reservoir node with the ability to obtain a mixture of delay/nondelay embeddings of the dynamical information of the time-series data applied at the input of a single PNA reservoir node. Our analysis shows that when these mixed delay/nondelay embeddings are used to train a perceptron at the output layer, our reservoir system outperforms existing PNA-based reservoir systems for the imitation of NARMA 2, NARMA 5, NARMA 7, and NARMA 10 time series data, and for the short-term and long-term prediction of the Mackey Glass time series data. © 2024 IEEE.

关键词： Time series

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N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs

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Photonics Research 2022年第2期10卷 587-593页

作者： Xianhe Liu Yi Sun Yakshita Malhotra Ayush Pandey Ping Wang Yuanpeng Wu Kai Sun Zetian Mi Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMichigan 48109USA Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China Department of Materials Science and Engineering University of MichiganAnn ArborMichigan 48109USA

The efficiency of conventional quantum well light-emitting diodes(LEDs) decreases drastically with reducing areal size. Here we show that such a critical size scaling issue of LEDs can be addressed by utilizing N-polar In Ga N nanowires. We studied the epitaxy and performance characteristics of N-polar In Ga N nanowire LEDs grown on sapphire substrate by plasma-assisted molecular beam epitaxy. A maximum external quantum efficiency-11% was measured for LEDs with lateral dimensions as small as 750 nm directly on wafer without any packaging. The effect of electron overflow and Auger recombination on the device performance is also studied. This work provides a viable approach for achieving high-efficiency nano and micro LEDs that were not previously possible.

关键词： sapphire nanowires polar

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Advances in solar energy harvesting integrated by van der Waals graphene heterojunctions

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RSC Advances 2023年第44期13卷 31273-31291页

作者： Le, Top Khac Mai, The-Hung Iqbal, Muhammad Aamir Vernardou, Dimitra Dao, Van-Duong Ponnusamy, Vinoth Kumar Rout, Chandra Sekhar Pham, Phuong V. Faculty of Materials Science and Technology University of Science Ho Chi Minh City700000 Viet Nam Vietnam National University Ho Chi Minh City700000 Viet Nam Department of Physics National Sun Yat-sen University Kaohsiung80424 Taiwan School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Department of Electrical and Computer Engineering School of Engineering Hellenic Mediterranean University Heraklion71410 Greece Faculty of Biotechnology Chemistry and Environmental Engineering Phenikaa University Hanoi100000 Viet Nam Department of Medicinal and Applied Chemistry and Research Center for Precision Environmental Medicine Kaohsiung Medical University Kaohsiung807 Taiwan Department of Medical Research Kaohsiung Medical University Hospital Kaohsiung807 Taiwan Department of Chemistry National Sun Yat-sen University Kaohsiung80424 Taiwan Centre for Nano and Material Sciences Jain University Bangalore562112 India

Graphene has garnered increasing attention for solar energy harvesting owing to its unique features. However, limitations hinder its widespread adoption in solar energy harvesting, comprising the band gapless in the molecular orbital of graphene lattice, its vulnerability to oxidation in oxidative environments, and specific toxic properties that require careful consideration during development. Beyond current challenges, researchers have explored doping graphene with ionic liquids to raise the lifespan of solar cells (SCs). Additionally, they have paid attention to optimizing graphene/Si Schottky junction or Schottky barrier SCs by enhancing the conductivity and work function of graphene, improving silicon's reflectivity, and addressing passivation issues at the surface/interface of graphene/Si, resulting in significant advancements in their power conversion efficiency. Increasing the functional area of graphene-based SCs and designing efficient grid electrodes are also crucial for enhancing carrier collection efficiency. Flaws and contaminants present at the interface between graphene and silicon pose significant challenges. Despite the progress of graphene/Si-based photovoltaic cells still needs to catch up to the efficiency achieved by commercially available Si p-n junction SCs. The low Schottky barrier height, design-related challenges associated with transfer techniques, and high lateral resistivity of graphene contribute to this performance gap. To maximize the effectiveness and robustness of graphene/Si-based photovoltaic cells, appropriate interlayers have been utilized to tune the interface and modulate graphene's functionality. This mini-review will address ongoing research and development endeavors using van der Waals graphene heterojunctions, aiming to overcome the existing limitations and unlock graphene's full potential in solar energy harvesting and smart storage systems. © 2023 The Royal Society of Chemistry.

关键词： Graphene

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Cost-Efficient Snubbers for Boost Converters

Cost-Efficient Snubbers for Boost Converters

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Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)

作者： Yeu-Torng Yau Thanh-Phu. Luu Department of Ph.D. Program Prospective Technology of Electrical Engineering and Computer Science National Chin-Yi University of Technology Taichung Taiwan Department of Electrical Engineering National Chin-Yi University of Technology Taichung Taiwan

ISBN: (数字)9784885523472

ISBN: (纸本)9798350349498

Conventional boost converters operating with hard-switching result in low conversion efficiency and increased electromagnetic interference emissions. In this paper, a cost-efficient passive snubber is proposed with a few additional components: two diodes, one capacitor, and one inductor. Moreover, because these snubber components are not located on the main power processing path, they only require low ratings, resulting in improved cost-effectiveness.

关键词： Snubbers Electromagnetic interference Capacitors Switches Electromagnetic compatibility Inductors

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Measurement of Synthetic-Dimension Band Structures in Silicon Coupled Ring Resonators 16

Measurement of Synthetic-Dimension Band Structures in Silico...

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16th Pacific Rim Conference on Lasers and Electro-Optics, CLEO-PR 2024

作者： Zhang, Ruming Li, Liucun Kamata, Mikiya Baba, Toshihiko Ozawa, Tomoki Ota, Yasutomo Iwamoto, Satoshi Research Center for Advanced Science and Technology The University of Tokyo Tokyo153-8904 Japan Yokohama National University Department of Electrical and Computer Engineering Yokohama240-8501 Japan Advanced Institute for Materials Research Tohoku University Sendai980-8577 Japan Keio University Department of Applied Physics and Physico-Informatics Yokohama223-8533 Japan

We fabricated integrated silicon coupled-ring resonators and measured photonic band structures for synthetic frequency lattices with different configurations. A phase difference between two modulation signals introduc... 详细信息

ISBN: (纸本)9798350372076

关键词： Silicon photonics

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Ultraclean suspended graphene by radiolysis of adsorbed water

arXiv

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arXiv 2024年

作者： Wang, Hao Randeniya, Milinda Houston, Austin Duscher, Gerd Gu, Gong Min H. Kao Department of Electrical Engineering and Computer Science The University of Tennessee KnoxvilleTN37916 United States Department of Materials Science and Engineering The University of Tennessee KnoxvilleTN37916 United States

Access to intrinsic properties of a 2D material is challenging due to the absence of a bulk that would dominate over surface contamination, and this lack of bulk also precludes effective conventional cleaning methods that are almost always sacrificial. Suspended graphene and carbon contaminants represent the most salient challenge. This work has achieved ultraclean graphene, attested by electron energy loss (EEL) spectra unprecedentedly exhibiting fine-structure features expected from bonding and band structure. In the cleaning process in a transmission electron microscope, radicals generated by radiolysis of intentionally adsorbed water remove organic contaminants, which would otherwise be feedstock of the notorious electron irradiation induced carbon deposition. This method can be readily adapted to other experimental settings and other materials, to enable previously inhibited undertakings that rely on the intrinsic properties or ultimate thinness of 2D materials. Importantly, the method is surprisingly simple and robust, easily implementable with common lab equipment. © 2024, CC BY.

关键词： Electron energy loss spectroscopy

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Exploring Nanoscale Photoresponse Mechanisms for Enhanced Photothermoelectric Effects in van der Waals Interfaces

arXiv

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arXiv 2024年

作者： Xu, Da Liu, Qiushi Liang, Boqun Yu, Ning Ma, Xuezhi Xu, Yaodong Taniguchi, Takashi Lake, Roger K. Yan, Ruoxue Liu, Ming Department of Electrical and Computer Engineering University of California - Riverside RiversideCA92521 United States Department of Chemical and Environmental Engineering University of California - Riverside RiversideCA92521 United States International Center for Materials Nanoarchitectonics National Institute for Materials Science Ibaraki Tsukuba305-0044 Japan Materials Science and Engineering Program University of California - Riverside RiversideCA92521 United States

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron-hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms—both dependent on the Fermi level and band structure—complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS2-Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (h-BN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light-matter interactions within low-dimensional systems. © 2024, CC BY.

关键词： Van der Waals forces

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