Metallic glasses are frequently used as structural materials. Therefore, it is important to develop methods to predict their mechanical response as a function of the microstructure prior to loading. We develop a novel...
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Three-dimensional (3D) simulations of the structure of liquid crystal (LC) torons, topologically protected distortions of the LC director field, under material flows are rare but essential in microfluidic applications...
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Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H 2 S) at room temperature, using thin films of rare‐earth metal (RE)‐based metal–organic framework (MOF) with underlyin...
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Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H 2 S) at room temperature, using thin films of rare‐earth metal (RE)‐based metal–organic framework (MOF) with underlying fcu topology. This unique MOF‐based sensor is made via the in situ growth of fumarate‐based fcu ‐MOF (fum‐ fcu ‐MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H 2 S at concentrations down to 100 ppb, with the lower detection limit around 5 ppb. The fum‐ fcu ‐MOF sensor exhibits a highly desirable detection selectivity towards H 2 S vs. CH 4 , NO 2 , H 2 , and C 7 H 8 as well as an outstanding H 2 S sensing stability as compared to other reported MOFs.
The rhombohedral structure is with anisotropic properties, leading to brittle mechanical properties. However, it is one of the major constituent phases, the (Bi) phase, in the Sn-Bi-based low-temperature solders, whic...
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Even after more than four decades of rapid-pace advances, the adoption of Surface-Enhanced Raman Scattering (SERS) remains limited, due to the difficulties in fabrication of effective and affordable nanostructured sur...
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We show, by solving Maxwell's equations, that an electric charge on the surface of a slab of a linear magnetoelectric material generates an image magnetic monopole below the surface provided that the magnetoelectr...
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In terms of energy efficiency and computational speed, neuromorphic electronics based on non-volatile memory devices is expected to be one of most promising hardware candidates for future artificial intelligence (AI)....
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In this paper we investigate the effect of disorder on highly correlated electron systems, which exhibit metal-insulator transition (MIT) and structural-phase transition (SPT). We show that the effect of ion irradiati...
In this paper we investigate the effect of disorder on highly correlated electron systems, which exhibit metal-insulator transition (MIT) and structural-phase transition (SPT). We show that the effect of ion irradiation is strikingly different between V2O3 and VO2, two otherwise similar materials. Upon irradiation, the MIT and SPT temperatures in V2O3 decrease drastically at low absolute dosages, much lower than for VO2. At a low threshold dose, the insulating state of V2O3 drastically collapses into a metallic state. Contrary to this, irradiation of VO2 leads to a much milder reduction of the MIT and SPT temperatures and to a weak, gradual decrease of the insulating state resistivity—not suppressed even at one order of magnitude higher doses than the V2O3 threshold. These major differences imply that the phase transition in V2O3 arises from global (rather than local as in VO2) physical mechanisms that are extremely sensitive to disorder. This shows that the MIT and SPT may have substantially different physical origins in different systems, with the consequent major implications for theoretical descriptions of the MIT in highly correlated electron systems.
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