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A Physical-Based Artificial Neural Networks Compact Modeling Framework for Emerging FETs

IEEE Transactions on Electron Devices 2024年第1期71卷 223-230页

作者： Yang, Ya-Shu Li, Yiming Kola, Sekhar Reddy Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory The Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan

We report a compact modeling framework based on the Grove-Frohman (GF) model and artificial neural networks (ANNs) for emerging gate-all-around (GAA) MOSFETs. The framework consists of two ANNs;the first ANN constructed with the drain current model not only can capture the main trend of device I - V characteristics but also can predict its variation even when the amount of training data for the ANN is insufficient or outside the range of applied biases. The second one is then designed to improve the model accuracy by further minimizing the errors between the target and the model outputs. We implement the proposed framework to accurately model emerging GAA nanosheet (NS) MOSFETs and complementary FETs (CFETs) without suffering from divergent issues in circuit simulation. In addition, nonphysical behaviors, such as nonzero current at zero bias, do not occur in the modeling framework. Compared to recently reported machine-learning (ML) models, our approach can achieve a similar level of model accuracy with merely 20% amount of the training data. © 1963-2012 IEEE.

关键词： Neural networks

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Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

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IEEE Transactions on Nanotechnology 2024年 23卷 386-392页

作者： Kola, Sekhar Reddy Li, Yiming Butola, Rajat National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Department of Electronics and Electrical Engineering Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation Hsinchu300093 Taiwan

In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly;in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R2-score prove that the ANN model properly grasps information from the dataset successfully;thus, it can be used to model emerging CFETs for circuit simulation. © 2002-2012 IEEE.

关键词： Neural networks

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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Three-phase Self-Excited Induction Generator Operating as Single-phase Induction Generator using Static VAR Compensator 20

Three-phase Self-Excited Induction Generator Operating as Si...

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20th International Conference on electrical engineering/electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2023

作者： Yukhalang, Sawat Sopapirm, Theppanom Kinnares, Vijit Mahanakorn University of Technology The Electrical Engineering Graduate Program Faculty of Engineering and Technology Nongjok Bangkok10530 Thailand Institute of Electrical and Electronics Faculty of Engineering and Technology Mahanakorn University of Technology Nongjok Bangkok10530 Thailand King Mongkut's Institute Technology Ladkrabang School of Engineering Department of Electrical Engineering Chalongkrung Road Ladkrabang Bangkok10520 Thailand

ISBN: (纸本)9798350310467

This paper proposes a performance analysis of using a static volt-amp-reactive (VAR) compensator for a three-phase self-excited induction generator (SEIG) operating as a single-phase induction generator. The study proposes appropriate capacitor for building up voltage supplying power to load with static VAR for regulating terminal voltage. The simulation model is analyzed by using MATLAB/Simulink under various conditions such as reactive power supplied, dynamic response, steady state, building up voltage for startup, linear load, non-linear load and harmonics in system. From the study (based on the study, the findings revealed it is found) that using the static VAR compensator connected in parallel with loads for supplying reactive power to the load systems is needed for maintaining terminal voltage. © 2023 IEEE.

关键词： Reactive power

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The Effect of Vehicles Speed on the Performance of VANET Protocol 1

The Effect of Vehicles Speed on the Performance of VANET Pro...

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1st International Conference on Advanced engineering and Technologies, ICONNIC 2023

作者： Qasim, Osama A. Mahdi, Dania Mohammed Noori, Mohammed S. Ali, Rabei Raad Sari, Christy Atika Rachmawanto, Eko Hari Northern Technical University Department of Computer Engineering Technology Mosul Iraq Uniersiti Tenaga Nasional Department of Electrical and Electronics Engineering Selangor Malaysia University of Dian Nuswantoro Study Program in Informatics Engineering Semarang Indonesia

ISBN: (纸本)9798350306484

At present, ad hoc networks are getting a lot of attention, because they have many features that differ from the rest of the networks and because they are technically advanced. In routing protocols, the Vehicular Ad-hoc network (VANET) differ in performance because each protocol has different variables, such as variable density, speed, and traffic scenarios. In this work, we proposed topology-based routing namely Ad hoc On Demand Distance Vector (AODV) protocol. The AODV protocol has been simulated in case of the movement of vehicles at a fixed velocity at 60km/h, and in case of randomly changing the vehicle's locations in the network. There are three parameters used to investigate the performance of the proposed AODV protocol which are packet delivery ratio, and overheads. The Simulation results show a significant decrease from 0.55 to 0.82 in the packet delivery ratio. On the other hand, the performance of the AODV protocol demonstrates effective communication for the VANETs. © 2023 IEEE.

关键词： Vehicular ad hoc networks

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High-Precision Open-Loop Time Amplifier Using Current Regulator

High-Precision Open-Loop Time Amplifier Using Current Regula...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Yusuke Toyoshima Ryosuke Kamiya Kenichi Ohhata Department of Engineering Electrical and Electronics Engineering Program Kagoshima University Kagoshima Japan

In this paper, we propose a high-precision open-loop time amplifier (TA) that utilizes a current regulator. In the current regulator, the VTH variation does not cause the current variation; therefore, the gain variation due to device mismatches can be reduced. Moreover, a pulse width extended switching scheme ensures that the current pulse reaches a desired current level completely even when the input is small. We performed simulations in 28-nm CMOS technology to evaluate the performance of the proposed TA. The results showed that the maximum gain error and the standard deviation of the error were 2.3% and 0.7%, respectively. Moreover, even when the input is small, gain error does not increase, and the proposed TA can amplify up to 1 ps input with high accuracy.

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Multiplexed Nanoscopy via Buffer Exchange

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ACS Nano 2024年第34期18卷 23445-23456页

作者： Chang, Ting-Jui Ben Yang, T. Tony Department of Electrical Engineering National Taiwan University Taipei10617 Taiwan Graduate Institute of Biomedical Electronics and Bioinformatics National Taiwan University Taipei10617 Taiwan Department of Physics National Taiwan University Taipei10617 Taiwan Nano Science and Technology Program Taiwan International Graduate Program Academia Sinica and National Taiwan University Taipei10617 Taiwan

Understanding cellular functions, particularly in their intricate complexity, can greatly benefit from the spatial mapping of diverse molecules through multitarget single-molecule localization microscopy (SMLM). Existing methodologies, primarily restricting the encoding dimensions to color and lifetime or requiring cyclic staining, often involve broad chromatic detection, specialized optical configurations, or sophisticated labeling techniques. Here, we propose a simple approach called buffer-exchange stochastic optical reconstruction microscopy (beSTORM), which introduces an additional dimension to differentiate between single molecules irrespective of their spectral properties. This method leverages the distinguishable photoblinking responses to distinct buffer conditions, offering a straightforward yet effective means of fluorophore discrimination. Through buffer exchanges, beSTORM achieves multitarget SMLM imaging with minimal crosstalk. Direct integration with expansion microscopy (ExM) demonstrates its capability to resolve up to six proteins at the molecular level within a single emission color without chromatic aberration. Overall, beSTORM presents a highly compatible imaging platform, promising significant advancements in highly multiplexed nanoscopy for exploring multiple targets in biological systems with nanoscale precision. © 2024 The Authors. Published by American Chemical Society.

关键词： Stochastic systems

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Modeling and Multivariable Analysis of a Two-Stage Three-Phase Grid-Connected Inverter for Photovoltaic Systems 8

Modeling and Multivariable Analysis of a Two-Stage Three-Pha...

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8th Southern Power electronics Conference and the 17th Brazilian Power electronics Conference, SPEC / COBEP 2023

作者： Teixeira, Daniel Pinheiro De Oliveira Almeida, Andrei Valle, Rodolfo Lacerda Barbosa, Pedro Gomes De Almeida, Pedro MacHado Federal University of Juiz de Fora Electrical Engineering Program Juiz de Fora Brazil CEFET-MG Dept. of Electric and Electronics Leopoldina Brazil Federal University of Juiz de Fora Dept. of Electrical Engineering Juiz de Fora Brazil

ISBN: (纸本)9798350321128

This article presents an approach to modelling and analyzing photovoltaic inverters through the use of multivariable techniques. By applying singular value decomposition and relative gain array methodologies, the inverter can be viewed as a multiple-input multiple-output system, allowing for a comprehensive assessment of the relevant variables that require control within a specific frequency range. This advanced approach offers a deeper understanding of the complex interactions between the different components of the photovoltaic inverter, enabling more effective control over critical parameters. © 2023 IEEE.

关键词： inverter modelling photovoltaic rga svd

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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT under Bias and Temperature Stress

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IEEE Journal of the Electron Devices Society 2024年 12卷 464-471页

作者： Aslam, Muhammad Chang, Shu-Wei Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Lee, Wen-Hsi Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan City701401 Taiwan Institute of Pioneer Semiconductor Innovation Industry Academic Innovation School National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-scaled, reliable, and high-performing devices, we fabricate and analyze scaled-channel a-IGZO-TFTs with an optimal double-gate structure, a thin nanosheet-based channel, and an effective high- κ dielectric namely HfO2. The reliably reported double gate IGZO nanosheet TFTs (DG-IGZO-NS-TFTs) are tested under positive and negative bias stress at variant temperatures, and the resulting modulations are analyzed critically. The reported DG-IGZO-NSTFTs exhibit a negative side threshold voltage shift (Δ Vth) accompanied by an increase in Ion/Ion(0) under negative bias temperature stress (NBTS) at elevated temperatures, which indicates the presence of additional charges. An anomalous negative side shifting of the Vth is observed under positive bias temperature stress (PBTS), where diffused hydrogen atoms are identified as introducing excess n-type carriers into the channel and causing the observed Δ Vth. The spectroscopic analysis is performed to establish evidence for the assumed mechanisms, and the role of individual gates is investigated in the context of performance variance under temperature-bias stress. Moreover, the partial reversibility of the stress-induced degradation is experimentally established and methodically discussed. Overall, the reported results offer a comprehensive understanding of scaled-channel DG-NS-IGZO-TFTs, which help shape performance-enhancement strategies, control degradation mechanisms, and define appropriate application scenarios. © 2013 IEEE.

关键词： Thin film transistors

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Reachability Analysis of Nonlinear Discrete-Time Systems Using Polyhedral Relaxations and Constrained Zonotopes 63

Reachability Analysis of Nonlinear Discrete-Time Systems Usi...

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63rd IEEE Conference on Decision and Control, CDC 2024

作者： Rego, Brenner S. Raffo, Guilherme V. Terra, Marco H. Scott, Joseph K. Georgia Institute of Technology Department of Chemical and Biomolecular Engineering 311 Ferst Dr. AtlantaGA30318 United States University of Säo Paulo Department of Electrical and Computer Engineering SP Säo Carlos13566-590 Brazil Federal University of Minas Gerais Department of Electronics Engineering and the Graduate Program in Electrical Engineering MG Belo Horizonte31270-901 Brazil

ISBN: (纸本)9798350316339

This paper presents a novel algorithm for reachability analysis of nonlinear discrete-time systems. The proposed method combines constrained zonotopes (CZs) with polyhedral relaxations of factorable representations of nonlinear functions to propagate CZs through nonlinear functions, which is normally done using conservative linearization techniques. The new propagation method provides better approximations than those resulting from linearization procedures, leading to significant improvements in the computation of reachable sets in comparison to other CZ methods from the literature. Numerical examples highlight the advantages of the proposed algorithm. © 2024 IEEE.

关键词： Numerical methods

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