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Cytometry in the Short-Wave Infrared

ACS Nano 2024年第28期18卷 18534-18547页

作者： Liu, Te-I Wang, Jhih-Shan Nguyen, Ai-Phuong Raabe, Marco Quiroz Reyes, Carlos Jose Lin, Chih-Hsin Lin, Ching-Wei Institute of Atomic and Molecular Sciences Academia Sinica Taipei City106319 Taiwan Department of Materials Science and Engineering National Taiwan University Taipei City106319 Taiwan Department of Physics University of Stuttgart Stuttgart70174 Germany Department of Chemistry National Tsing Hua University Hsinchu300044 Taiwan International Ph.D. Program in Biomedical Engineering Taipei Medical University New Taipei City235603 Taiwan Graduate Institute of Nanomedicine and Medical Engineering Taipei Medical University New Taipei City235603 Taiwan

Cytometry plays a crucial role in characterizing cell properties, but its restricted optical window (400-850 nm) limits the number of stained fluorophores that can be detected simultaneously and hampers the study and utilization of short-wave infrared (SWIR;900-1700 nm) fluorophores in cells. Here we introduce two SWIR-based methods to address these limitations: SWIR flow cytometry and SWIR image cytometry. We develop a quantification protocol for deducing cellular fluorophore mass. Both systems achieve a limit of detection of ∼0.1 fg cell-1 within a 30 min experimental time frame, using individualized, high-purity (6,5) single-wall carbon nanotubes as a model fluorophore and macrophage-like RAW264.7 as a model cell line. This high-sensitivity feature reveals that low-dose (6,5) serves as an antioxidant, and cell morphology and oxidative stress dose-dependently correlate with (6,5) uptake. Our SWIR cytometry holds immediate applicability for existing SWIR fluorophores and offers a solution to the issue of spectral overlapping in conventional cytometry. © 2024 The Authors. Published by American Chemical Society.

关键词： Oxygen

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Designing high-performance nonfused ring electron acceptors via side-chain engineering

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Aggregate 2024年第2期5卷 431-438页

作者： Xinming Zheng Wenlong Liu Nan Wei Andong Zhang Guangliu Ran Hongtao Shan Hong Huo Yahui Liu Hao Lu Xinjun Xu Zheng Tang Wenkai Zhang Zhishan Bo Beijing Key Laboratory of Energy Conversion and Storage Materials College of ChemistryBeijing Normal UniversityBeijingChina College of Textiles and Clothing State Key Laboratory of Bio-Fibers and Eco-TextilesQingdao UniversityQingdaoChina Center for Advanced Low-dimension Materials State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghaiChina Department of Physics and Applied Optics Beijing Area Major Laboratory Center for Advanced Quantum StudiesBeijing Normal UniversityBeijingChina

The side-chain has a significant influence on the optical properties and aggregation behaviors of the organic small molecule acceptors,which becomes an important strategy to optimize the photovoltaic performance of organic solar *** this work,we designed and synthesized three brand-new nonfused ring electron acceptors(NFREAs)OC4-4Cl-Ph,OC4-4Cl-Th,and OC4-4Cl-C8 with hexylbenzene,hexylthiophene,and octyl side chains on theπ-bridge *** with OC4-4Cl-Ph and OC4-4Cl-Th,OC4-4Cl-C8 with linear alkyl side chain has more red-shift absorption,which is conducive to obtaining higher short-circuit current ***,the OC4-4Cl-C8 film exhibits a longer exciton diffusion distance,and the D18:OC4-4Cl-C8 blend film displays faster hole transfer,weaker bimolecular recombination,and more efficient exciton ***,The D18:OC4-4Cl-C8 blend films may effectively form interpenetrating networks that resemble nanofibrils,which can facilitate exciton dissociation and charge ***,OC4-4Cl-C8-based devices can be created a marvellously power conversion efficiency(PCE)of 16.56%,which is much higher than OC4-4Cl-Ph(12.29%)-and OC4-4Cl-Th-based(11.00%)ones,being the highest PCE among the NFREA based binary *** in all,we have validated that side-chain engineering is an efficient way to achieve high-performance NFREAs.

关键词： nonfused ring electron acceptors organic solar cells power conversion efficiency side-chain engineering

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Achieving Near-Intrinsic Exciton Linewidth at Room Temperature in Monolayer WS2 Coupled with a Mie Resonator

Achieving Near-Intrinsic Exciton Linewidth at Room Temperatu...

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CLEO: science and Innovations, S and I 2022

作者： Fang, Jie Yao, Kan Zheng, Yuebing Materials Science & Engineering Program Texas Materials Institute The University of Texas at Austin AustinTX78712 United States Walker Department of Mechanical Engineering The University of Texas at Austin AustinTX78712 United States

ISBN: (纸本)9781557528209

Strong multiparticle interactions at room temperature (RT) lead to broadened homogeneous exciton linewidths in 2D semiconductors, degrading the quality of excitonic mode and emission. By coupling a Mie resonator with monolayer WS2, we achieve narrowed linewidths at RT, approaching the theoretical limit at 0 Kelvin. © Optica Publishing Group 2022, © 2022 The Author(s)

关键词： Linewidth

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Electrochemically Modulated Metasurfaces

Electrochemically Modulated Metasurfaces

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Eaves-Rathert, Janna Kovalik, Elena Ugwu, Chibuzor Fabian Pint, Cary L. Valentine, Jason G. Department of Mechanical Engineering Vanderbilt University NashvilleTN37212 United States Interdisciplinary Materials Science Program Vanderbilt University NashvilleTN37212 United States Department of Mechanical Engineering Iowa State University AmesIA50011 United States

Electrochemical intercalation of lithium in titanium dioxide and silicon-based metasurfaces is used to initiate phase changes in a continuously tunable, reversible, and bistable manner for dynamic control over structu... 详细信息

ISBN: (纸本)9781957171258

关键词： Titanium dioxide

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Optical neural networks:progress and challenges

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Light(science & Applications) 2024年第11期13卷 2511-2535页

作者： Tingzhao Fu Jianfa Zhang Run Sun Yuyao Huang Wei Xu Sigang Yang Zhihong Zhu Hongwei Chen College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangshaChina Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices National University of Defense TechnologyChangshaChina Nanhu Laser Laboratory National University of Defense TechnologyChangshaChina Department of Electronic Engineering Tsinghua UniversityBeijingChina Beijing National Research Center for Information Science and Technology(BNRist) BeijingChina

Artificial intelligence has prevailed in all trades and professions due to the assistance of big data resources,advanced algorithms,and high-performance electronic ***,conventional computing hardware is inefficient at implementing complex tasks,in large part because the memory and processor in its computing architecture are separated,performing insufficiently in computing speed and energy *** recent years,optical neural networks(ONNs)have made a range of research progress in optical computing due to advantages such as subnanosecond latency,low heat dissipation,and high *** are in prospect to provide support regarding computing speed and energy consumption for the further development of artificial intelligence with a novel computing ***,we first introduce the design method and principle of ONNs based on various optical ***,we successively review the non-integrated ONNs consisting of volume optical components and the integrated ONNs composed of on-chip ***,we summarize and discuss the computational density,nonlinearity,scalability,and practical applications of ONNs,and comment on the challenges and perspectives of the ONNs in the future development trends.

关键词： networks neural hardware

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Design of Mixed-Dimensional QDs/MoS2/TiO2 Heterostructured Resistive Random-Access Memory with Interfacial Analog Switching Characteristics for Potential Neuromorphic Computing

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ACS Applied Electronic materials 2024年第3期6卷 1581-1589页

作者： Tang, Shin-Yi Shih, Yu-Chuan Shen, Ying-Chun Cyu, Ruei-Hong Chen, Chieh-Ting Yang, Tzu-Yi Chaudhary, Mayur Peng, Yu-Ren Kuo, Yao-Ren Miao, Wen-Chien Yu, Yi-Jen Lee, Ling Kuo, Hao-Chung Chueh, Yu-Lun Department of Materials Science and Engineering National Tsing Hua University Hsinchu30013 Taiwan College of Semiconductor Research National Tsing Hua University Hsinchu30013 Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei11492 Taiwan Ph. D. Program in Prospective Functional Materials Industry National Tsing Hua University Hsinchu30013 Taiwan Department of Electrophysics College of Science National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Instrument Center National Tsing Hua University Hsinchu30013 Taiwan Department of Photonics Institute of Electro-Optical Engineering National Yang-Ming Chiao Tung University Hsinchu30010 Taiwan Department of Physics National Sun Yat-Sen University Kaohsiung80424 Taiwan Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nanoscale nonvolatile memory devices and neuromorphic computing applications. In this study, we developed a novel mixed-dimensional design for RRAM devices, incorporating zero-dimensional quantum dots (QDs), two-dimensional MoS2, and a TiO2 switching layer to achieve prominent interfacial switching behaviors. Compared with typical filamentary RRAM devices, the proposed heterostructure featured a light-sensitive QDs/MoS2 layer that allowed for bias-controllable resistive changes during the set and reset processes without abrupt switching. This was endowed by effective electron-hole pair separations upon excitation and the generation of a thin molybdenum oxide (MoOx) layer due to the accumulation of oxygen ions at the interface between MoS2 and TiO2. The ITO/QDs/MoS2/TiO2/Pt RRAM device exhibited an on/off ratio of 10 with improved endurance under 515 nm laser illumination and wavelength-dependent resistive switching behavior, making it useful for multilevel storage. Furthermore, the heterostructured device demonstrated synaptic characteristics with enhanced potentiation and depression nonlinearities and asymmetry factors, revealing its potential for future neuromorphic applications. © 2024 American Chemical Society.

关键词： Titanium dioxide

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Photonic Crystals with Split Ring Unit Cells for Subwavelength Light Confinement

Photonic Crystals with Split Ring Unit Cells for Subwaveleng...

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CLEO: science and Innovations, S and I 2022

作者： Arnold, Kellen P. Halimi, Sami I. Allen, Joshua A. Hu, Shuren Weiss, Sharon M. Interdisciplinary Materials Science Program Vanderbilt University NashvilleTN37235 United States Department of Electrical Engineering and Computer Science Vanderbilt University NashvilleTN37235 United States

We report a split ring photonic crystal that demonstrates an order of magnitude larger peak energy density compared to traditional photonic crystals. The split ring offers highly focused optical energy in an accessibl...

ISBN: (纸本)9781557528209

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In vitro and in vivo study on fine-grained Mg-Zn-RE-Zr alloy as a biodegradeable orthopedic implant produced by friction stir processing

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Bioactive materials 2023年第10期28卷 448-466页

作者： Vasanth C.Shunmugasamy Marwa AbdelGawad Muhammad Umar Sohail Talal Ibrahim Talha Khan Thomas Daniel Seers Bilal Mansoor Mechanical Engineering Program Texas A&M University at QatarEducation CityDohaQatar Department of Mechanical Engineering Texas A&M University3123 TAMUCollege StationTX 77843USA Proteomics Core Weill Cornell MedicineEducation CityDohaQatar Department of Surgery Division of Orthopedic SurgerySidra MedicineDohaQatar Clinical Orthopedic Surgery Weill Cornell MedicineEducation CityDohaQatar Petroleum Engineering Program Texas A&M University at QatarEducation CityDohaQatar Department of Materials Science and Engineering Texas A&M University3003 TAMUCollege StationTX 77843USA

Magnesium alloys containing biocompatible components show tremendous promise for applications as temporary biomedical devices. However, to ensure their safe use as biodegradeable implants, it is essential to control their corrosion rates. In concentrated Mg alloys, a microgalvanic coupling between the α-Mg matrix and secondary precipitates exists which results in increased corrosion rate. To address this challenge, we engineered the microstructure of a biodegradable Mg-Zn-RE-Zr alloy by friction stir processing (FSP), improving its corrosion resistance and mechanical properties simultaneously. The FS processed alloy with refined grains and broken and uniformly distributed secondary precipitates showed a relatively uniform corrosion morphology accompanied with the formation of a stable passive layer on the alloy surface. In vivo corrosion evaluation of the processed alloy in a small animal model showed that the material was well-tolerated with no signs of inflammation or harmful by-products. Remarkably, the processed alloy supported bone until it healed till eight weeks with a low in vivo corrosion rate of 0.7 mm/year. Moreover, we analyzed blood and histology of the critical organs such as liver and kidney, which showed normal functionality and consistent ion and enzyme levels, throughout the 12- week study period. These results demonstrate that the processed Mg-Zn-RE-Zr alloy offers promising potential for osseointegration in bone tissue healing while also exhibiting controlled biodegradability due to its engineered microstructure. The results from the present study will have profound benefit for bone fracture management, particularly in pediatric and elderly patients.

关键词： Biodegradable magnesium Bone healing Friction stir processing Microstructure Corrosion resistance

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Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4

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Physical Review B 2024年第3期110卷 035423-035423页

作者： Dong Li Xing-Yu Liu Zhen-Cun Pan An-Qi Wang Jiantian Zhang Peng Yu Zhi-Min Liao State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Academy for Advanced Interdisciplinary Studies State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Science and Engineering Hefei National Laboratory Hefei 230088 China

Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spin-polarized currents is crucial for advancing magnetic memory technologies. Here we introduce the Berry curvature dipole as a key evaluation factor, directly measurable through nonlinear Hall effects. In the Weyl semimetal TaIrTe4 used in our experiments, applying a current parallel to the Berry curvature dipole results in out of plane orbital magnetization, which governs the field-free perpendicular magnetization switching in TaIrTe4/Fe3GaTe2 heterostructures. Notably, all-electric control of van der Waals magnetoresistive memory at room temperature has been achieved with a low critical current density ∼2×106A/cm2 for data writing. Our findings reveal the connection between nonlinear Hall effects and field-free magnetization switching, highlighting the potential of the Berry curvature dipole in advancing orbitronics.

关键词： Geometric & topological phases Spin torque Spintronics Weyl semimetal

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Orbital anomalous Hall effect in the few-layer Weyl semimetal TaIrTe4

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Physical Review B 2024年第15期110卷 155434页

作者： An-Qi Wang Dong Li Tong-Yang Zhao Xing-Yu Liu Jiantian Zhang Xin Liao Qing Yin Zhen-Cun Pan Peng Yu Zhi-Min Liao State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Academy for Advanced Interdisciplinary Studies State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Science and Engineering Hefei National Laboratory Hefei 230088 China

We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic Weyl semimetal TaIrTe4. This is achieved by applying a direct current Idc and an alternating current Iω (Iω≪Idc) in TaIrTe4, where the former induces time-reversal symmetry breaking and the latter probes the triggered AHE. The anomalous Hall resistance VHω/Iω shows a linear dependence on Idc and changes sign with the polarity of Idc. In temperature-dependent measurements, VHω/Iω also experiences a sign reversal at ∼100 K, consistent with the temperature-dependent nonlinear Hall effect (NLHE). Furthermore, in measurements involving only dc transport, the dc Hall voltage exhibits a quadratic relationship with Idc. When the Idc direction is reversed, the Hall resistance changes sign, demonstrating a colossal nonreciprocal Hall effect (NRHE). Our theoretical calculations suggest that the observed linear AHE, NLHE, and NRHE all dominantly originate from the current-induced orbital magnetization compared to the minor spin contribution. This work provides deep insights into the orbital magnetoelectric effect and nonlinear Hall response, promising precise electric control of out-of-plane polarized orbit flow.

关键词： Hall effect Topological materials Transport phenomena Transport techniques

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