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Nature communications 2024年第1期15卷 6531页

作者： Jade J Basinski Sharon E Bone Annaleise R Klein Wiriya Thongsomboon Valerie Mitchell John T Shukle Gregory K Druschel Aaron Thompson Ludmilla Aristilde Department of Civil and Environmental Engineering Northwestern University Evanston IL USA. Stanford Synchrotron Radiation Light Source SLAC National Accelerator Laboratory Menlo Park CA USA. Australian Synchrotron Australian Nuclear Science and Technology Organisation Clayton VIC Australia. Department of Chemistry Mahasarakham University Mahasarakham Thailand. Department of Earth Sciences Indiana University-Purdue University Indianapolis Indianapolis IN USA. ZevRoss Spatial Analysis Ithaca NY USA. Department of Crop and Soil Sciences University of Georgia Athens GA USA. Department of Civil and Environmental Engineering Northwestern University Evanston IL USA. ludmilla.aristilde@northwestern.edu.

Front Cover: Redox Reaction in Ti−Mn Redox Flow Battery Studied by X-ray Absorption Spectroscopy (Chem. Asian J. 1/2023)

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Chemistry – An Asian Journal 2022年第1期18卷

作者： Dr. Daisuke Asakura Dr. Eiji Hosono Dr. Miho Kitamura Dr. Koji Horiba Dr. Eisuke Magome Dr. Hiroyuki Setoyama Dr. Eiichi Kobayashi Dr. Hayato Yuzawa Dr. Takuji Ohigashi Dr. Takaaki Sakai Dr. Ryoichi Kanega Dr. Takashi Funaki Dr. Yukari Sato Dr. Akihiro Ohira Research Institute for Energy Conservation National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Higashi Tsukuba Ibaraki 305-8565 Japan Global Zero Emission Research Center National Institute of Advanced Industrial Science and Technology (AIST) 16-1 Onogawa Tsukuba Ibaraki 305-8569 Japan AIST-University of Tokyo Advanced Operando-Measurement Open Innovation Laboratory 5-1-5 Kashiwanoha Kashiwa Chiba 277-8565 Japan Photon Factory Institute of Materials Structure Science High Energy Accelerator Research Organization (KEK) 1-1 Oho Tsukuba Ibaraki 305-0801 Japan SOKENDAI The Graduate University for Advanced Studies 1-1 Oho Tsukuba Ibaraki 305-0801 Japan Institute for Advanced Synchrotron Light Source National Institutes for Quantum Science and Technology (QST) 6-6-11-901 Aoba Aramaki Aoba-ku Sendai Miyagi 980-8579 Japan SAGA Light Source Kyushu Synchrotron Light Research Center 8-7 Yayoigaoka Tosu Saga 841-0005 Japan UVSOR Synchrotron Facility Institute for Molecular Science (IMS) 38 Nishigo-Naka Myodaiji Okazaki Aichi 444-8585 Japan

DOUBLE-SLIT INTERFEROMETER MEASUREMENTS AT SPEAR3*

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arXiv 2019年

作者： Li, C.L. Xu, Y.H. Boland, M.J. Mitsuhashi, T. Zhang, W.J. Grinberg, M. Corbett, J. East China University of Science and Technology Shanghai China Donghua University Shanghai China Synchrotron Light Source Australia Clayton Australia KEK Tsukuba Japan University of Saskatchewan Saskatoon Canada SLAC National Accelerator Laboratory Menlo Park United States

The resolution of a conventional telescope used to image visible-light synchrotron radiation is often limited by diffraction effects. To improve resolution, the double-slit interferometer method was developed at KEK and has since become popular around the world. Based on the Van Cittert-Zernike theorem relating transverse source profile to transverse spatial coherence, the particle beam size can be inferred by recording fringe contrast as a function of interferometer slit separation. In this paper, we describe the SPEAR3 double-slit interferometer, develop a theoretical framework for the interferometer and provide experimental results. Of note the double-slit system is 'rotated' about the beam axis to map the dependence of photon beam coherence on angle. Copyright © 2019, The Authors. All rights reserved.

关键词： Interferometers

Strong correlations and orbital texture in single-layer 1T-TaSe₂ (vol 16, pg 218, 2020)

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NATURE PHYSICS 2021年第7期17卷 867-867页

作者： Chen, Yi Ruan, Wei Wu, Meng Tang, Shujie Ryu, Hyejin Tsai, Hsin-Zon Lee, Ryan L. Kahn, Salman Liou, Franklin Jia, Caihong Albertini, Oliver R. Xiong, Hongyu Jia, Tao Liu, Zhi Sobota, Jonathan A. Liu, Amy Y. Moore, Joel E. Shen, Zhi-Xun Louie, Steven G. Mo, Sung-Kwan Crommie, Michael F. Department of Physics University of California Berkeley CA USA Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA USA International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province Shenzhen University Shenzhen China Henan Key Laboratory of Photovoltaic Materials and Laboratory of Low-dimensional Materials Science School of Physics and Electronics Henan University Kaifeng China Kavli Energy Nano Sciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory Berkeley CA USA Stanford Institute for Materials and Energy Sciences SLAC National Accelerator Laboratory and Stanford University Menlo Park CA USA Geballe Laboratory for Advanced Materials Departments of Physics and Applied Physics Stanford University Stanford CA USA Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA USA CAS Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China School of Physical Science and Technology Shanghai Tech University Shanghai China Center for Spintronics Korea Institute of Science and Technology Seoul South Korea Department of Physics Georgetown University Washington DC USA

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

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arXiv 2020年

作者： Lee, Ji-Eun Hwang, Jinwoong Kang, Minhee Joo, Hyun-Jeong Ryu, Hyejin Kim, Kyoo Kim, Yongsam Kim, Namdong Duong, Anh Tuan Cho, Sunglae Mo, Sung-Kwan Hwang, Choongyu Yang, Imjeong Ho-Soon Department of Physics Pusan National University Busan46241 Korea Republic of Center for Spintronics Korea Institute of Science and Technology Seoul02792 Korea Republic of Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Korea Atomic Energy Research Institute 111 Daedeok-Daero 989Beon-Gil Yuseong-Gu Daejeon34057 Korea Republic of Gyeongbuk37673 Korea Republic of Pohang Accelerator Laboratory Pohang University of Science and Technology Gyeongbuk37673 Korea Republic of Department of Physics University of Ulsan Ulsan44610 Korea Republic of

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin n-region is formed between Ta-adsorbed surface and bulk. Copyright © 2020, The Authors. All rights reserved.

关键词： Tin compounds

Observation of topological superconductivity in a stoichiometric transition metal dichalcogenide 2M-WS2

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arXiv 2021年

作者： Li, Yiwei Zheng, H.J. Fang, Y.Q. Zhang, D.Q. Chen, Y.J. Chen, C. Liang, A.J. Shi, W.J. Pei, D. Xu, L.X. Liu, S. Pan, J. Lu, D.H. Hashimoto, M. Barinov, A. Jung, S.W. Cacho, C. Wang, M.X. He, Y. Fu, L. Zhang, H.J. Huang, F.Q. Yang, L.X. Liu, Z.K. Chen, Y.L. School of Physical Science and Technology ShanghaiTech University Shanghai201210 China Department of Physics University of Oxford OxfordOX1 3PU United Kingdom ShanghaiTech Laboratory for Topological Physics Shanghai201210 China University of Chinese Academy of Sciences Beijing100049 China State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Science Shanghai200050 China State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing100871 China School of Physics China Jiliang University Hangzhou310018 China National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing210093 China Collaborative Innovation Center of Advanced Microstructures Nanjing210093 China State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing100084 China Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Center for Transformative Science ShanghaiTech University Shanghai201210 China ShanghaiTech University Shanghai201210 China Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo ParkCA94025 United States Elettra-Sincrotrone Trieste Trieste Basovizza34149 Italy Diamond Light Source Harwell Campus DidcotOX11 0DE United Kingdom Department of Physics University of California at BerkeleyCA94720 United States Department of Physics Massachusetts Institute of Technology CambridgeMA02139 United States Frontier Science Center for Quantum Information Beijing100084 China

Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spectroscopy, we investigated a stoichiometric transition metal dichalcogenide (TMD), 2M-WS2 with a superconducting transition temperature of 8.8 K (the highest among all TMDs in the natural form up to date) and observed distinctive topological surface states (TSSs). Furthermore, in the superconducting state, we found that the TSSs acquired a nodeless superconducting gap with similar magnitude as that of the bulk states. These discoveries not only evidence 2M-WS2 as an intrinsic TSC without the need of sensitive composition tuning or sophisticated heterostructures fabrication, but also provide an ideal platform for device applications thanks to its van der Waals layered structure. Copyright © 2021, The Authors. All rights reserved.

关键词： Tungsten compounds

Dynamical Slowing-Down in an Ultrafast Photoinduced Phase Transition

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Physical Review Letters 2019年第9期123卷 097601-097601页

作者： Alfred Zong Pavel E. Dolgirev Anshul Kogar Emre Ergeçen Mehmet B. Yilmaz Ya-Qing Bie Timm Rohwer I-Cheng Tung Joshua Straquadine Xirui Wang Yafang Yang Xiaozhe Shen Renkai Li Jie Yang Suji Park Matthias C. Hoffmann Benjamin K. Ofori-Okai Michael E. Kozina Haidan Wen Xijie Wang Ian R. Fisher Pablo Jarillo-Herrero Nuh Gedik Department of Physics Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Skolkovo Institute of Science and Technology Skolkovo Innovation Center 3 Nobel Street Moscow 143026 Russia and Department of Physics Harvard University Cambridge Massachusetts 02138 USA Advanced Photon Source Argonne National Laboratory Argonne Illinois 60439 USA Geballe Laboratory for Advanced Materials Stanford University Stanford California 94305 USA Department of Applied Physics Stanford University Stanford California 94305 USA and SIMES SLAC National Accelerator Laboratory Menlo Park California 94025 USA SLAC National Accelerator Laboratory Menlo Park California 94025 USA Department of Materials Science and Engineering Stanford University Stanford California 94305 USA Linac Coherent Light Source SLAC National Accelerator Laboratory Menlo Park California 94025 USA

Complex systems, which consist of a large number of interacting constituents, often exhibit universal behavior near a phase transition. A slowdown of certain dynamical observables is one such recurring feature found in a vast array of contexts. This phenomenon, known as critical slowing-down, is well studied mostly in thermodynamic phase transitions. However, it is less understood in highly nonequilibrium settings, where the time it takes to traverse the phase boundary becomes comparable to the timescale of dynamical fluctuations. Using transient optical spectroscopy and femtosecond electron diffraction, we studied a photoinduced transition of a model charge-density-wave (CDW) compound LaTe3. We observed that it takes the longest time to suppress the order parameter at the threshold photoexcitation density, where the CDW transiently vanishes. This finding can be captured by generalizing the time-dependent Landau theory to a system far from equilibrium. The experimental observation and theoretical understanding of dynamical slowing-down may offer insight into other general principles behind nonequilibrium phase transitions in many-body systems.

关键词： Charge density waves Dynamical phase transitions Ultrafast phenomena Electron diffraction Ultrafast pump-probe spectroscopy

Correlation-Driven Electronic Reconstruction in FeTe1−xSex

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arXiv 2022年

作者： Huang, Jianwei Yu, Rong Xu, Zhijun Zhu, Jian-Xin Oh, Ji Seop Jiang, Qianni Wang, Meng Wu, Han Chen, Tong Denlinger, Jonathan D. Mo, Sung-Kwan Hashimoto, Makoto Michiardi, Matteo Pedersen, Tor M. Gorovikov, Sergey Zhdanovich, Sergey Damascelli, Andrea Gu, Genda Dai, Pengcheng Chu, Jiun-Haw Lu, Donghui Si, Qimiao Birgeneau, Robert J. Yi, Ming Department of Physics and Astronomy Rice Center for Quantum Materials Rice University HoustonTX77005 United States Department of Physics Renmin University of China Beijing100872 China NIST Center for Neutron Research National Institute of Standards and Technology GaithersburgMD20899 United States Department of Materials Science and Engineering University of Maryland College ParkMD20742 United States Department of Physics University of California Berkeley BerkeleyCA94720 United States Theoretical Division Los Alamos National Laboratory Los AlamosNM87545 United States Center for Integrated Nanotechnologies Los Alamos National Laboratory Los AlamosNM87545 United States Department of Physics University of Washington SeattleWA98195 United States School of Physics Sun Yat-Sen University Guangdong Guangzhou510275 China Advanced Light Source Lawrence Berkeley National Lab BerkeleyCA94720 United States Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo ParkCA94025 United States Department of Physics & Astronomy University of British Columbia VancouverBCV6T 1Z1 Canada Quantum Matter Institute University of British Columbia VancouverBCV6T 1Z4 Canada Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße 40 Dresden01187 Germany Canadian Light Source Inc. 44 Innovation Boulevard SaskatoonSKS7N 2V3 Canada Condensed Matter Physics and Materials Science Department Brookhaven National Laboratory UptonNY11973 United States Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Department of Materials Science and Engineering University of California Berkeley BerkeleyCA94720 United States

Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstruction of the Fermi surface tuned independently by two orthogonal axes of temperature and Se/Te ratio in the iron chalcogenide family FeTe1−xSex. We demonstrate that this reconstruction is driven by the de-hybridization of a strongly renormalized dxy orbital with the remaining itinerant iron 3d orbitals in the emergence of an orbital-selective Mott phase. Our observations are further supported by our theoretical calculations to be salient spectroscopic signatures of such a non-thermal evolution from a strongly correlated metallic phase into an orbital-selective Mott phase in dxy as Se concentration is reduced. Copyright © 2022, The Authors. All rights reserved.

关键词： Copper compounds

Correlative image learning of chemo-mechanics in phase-transforming solids

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arXiv 2021年

作者： Deng, Haitao D. Zhao, Hongbo Jin, Norman L. Hughes, Lauren Savitzky, Benjamin Ophus, Colin Fraggedakis, Dimitrios Borbély, András Yu, Young-Sang Lomeli, Eder Yan, Rui Liu, Jueyi Shapiro, David A. Cai, Wei Bazant, Martin Z. Minor, Andrew M. Chueh, William C. Department of Materials Science and Engineering Stanford StanfordCA94305 United States Institute for Computational and Mathematical Engineering StanfordCA94305 United States Department of Chemical Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA94708 United States Mines Saint-Etienne Univ. Lyon CNRS UMR 5307 LGF Centre SMS Saint-EtienneF - 42023 France Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Department of Mechanical Engineering Stanford University StanfordCA94305 United States Department of Mathematics Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States Department of Materials Science and Engineering University of California BerkeleyCA94720 United States Stanford Institute for Materials and Energy Sciences SLAC National Accelerator Laboratory Menlo ParkCA94025 United States

Constitutive laws underlie most physical processes in nature. However, learning such equations in heterogeneous solids (e.g., due to phase separation) is challenging. One such relationship is between composition and eigenstrain, which governs the chemo-mechanical expansion in solids. In this work, we developed a generalizable, physically-constrained image-learning framework to algorithmically learn the chemo-mechanical constitutive law at the nanoscale from correlative four-dimensional scanning transmission electron microscopy and X-ray spectro-ptychography images. We demonstrated this approach on LiXFePO4, a technologically-relevant battery positive electrode material. We uncovered the functional form of composition-eigenstrain relation in this two-phase binary solid across the entire composition range (0 ≤ X ≤ 1), including inside the thermodynamically-unstable miscibility gap. The learned relation directly validates Vegard’s law of linear response at the nanoscale. Our physics-constrained data-driven approach directly visualizes the residual strain field (by removing the compositional and coherency strain), which is otherwise impossible to quantify. Heterogeneities in the residual strain arise from misfit dislocations and were independently verified by X-ray diffraction line profile analysis. Our work provides the means to simultaneously quantify chemical expansion, coherency strain and dislocations in battery electrodes, which has implications on rate capabilities and lifetime. Broadly, this work also highlights the potential of integrating correlative microscopy and image learning for extracting material properties and physics. © 2021, CC BY.

关键词： Phase separation

Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

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Research Square

Research Square 2021年

作者： Cheema, Suraj S. Shanker, Nirmaan Wang, Li-Chen Hsu, Cheng-Hsiang Hsu, Shang-Lin Liao, Yu-Hung Jose, Matthew San Gomez, Jorge Li, Wenshen Bae, Jong-Ho Volkman, Steve Kwon, Daewoong Rho, Yoonsoo Pinelli, Gianni Rastogi, Ravi Pipitone, Dominick Stull, Corey Cook, Matthew Tyrrell, Brian Stoica, Vladimir A. Zhang, Zhan Freeland, John W. Tassone, Christopher J. Mehta, Apurva Soheli, Ghazal Thompson, David Suh, Dong Ik Koo, Won-Tae Nam, Kab-Jin Jung, Dong Jin Song, Woo-Bin Lin, Chung-Hsun Nam, Seunggeol Heo, Jinseong Grigoropoulos, Costas P. Shafer, Padraic Fay, Patrick Ramesh, Ramamoorthy Ciston, Jim Datta, Suman Mohamed, Mohamed Hu, Chenming Salahuddin, Sayeef Department of Materials Science and Engineering University of California BerkeleyCA United States Department of Electrical Engineering and Computer Sciences University of California BerkeleyCA United States Department of Electrical Engineering University of Notre Dame Notre DameIN United States Applied Science & Technology University of California BerkeleyCA United States Laser Thermal Laboratory Department of Mechanical Engineering University of California BerkeleyCA United States Lincoln Laboratory Massachusetts Institute of Technology LexingtonMA United States Department of Materials Science and Engineering Pennsylvania State University University ParkPA United States Advanced Photon Source Argonne National Laboratory LemontIL United States Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo ParkCA United States Applied Materials Santa ClaraCA United States SK Hynix Inc. Gyeonggi-do Icheon17336 Korea Republic of Semiconductor R&D Center Samsung Electronics Gyeonggi-do 445-330 Korea Republic of Logic Technology Development Intel Corporation HillsboroOR97124 United States Samsung Advanced Institute of Technology Samsung Electronics Gyeonggi-do 445-330 Korea Republic of Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Physics University of California BerkeleyCA United States Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA United States National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA United States

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to the adoption of high-κ dielectric HfO2 in the gate stack in 20082, which remains as the material of choice to date. Here, we report HfO2-ZrO2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors and scaled down to ∼ 20 Å, the same gate oxide thickness required for high performance transistors. The overall EOT (equivalent oxide thickness) in metal-oxide-semiconductor capacitors is equivalent to ∼ 6.5 Å effective SiO2 thickness, which is, counterintuitively, even smaller than the interfacial SiO2 thickness (8.0-8.5 Å) itself. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO2-based high-κ dielectric gate stacks without scavenging the interfacial SiO2, which has adverse effects on the electron transport and gate leakage current3. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. Therefore, our work demonstrates that HfO2-ZrO2 multilayers with competing ferroelectric-antiferroelectric order, stabilized in the 2 nm thickness regime, provides a new path towards advanced gate oxide stacks in electronic devices beyond the conventional HfO2-based high-κ dielectrics. © 2021, CC BY.

关键词： Silica