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Surgical and radiologic anatomy : SrA 2009年第1期31 Suppl 1卷 49-93页

作者： Jaime Pereda Gen Niimi Jagat Mohini Kaul Sabita Mishra Babita Pangtey daniele Peri Vincenza Cannella Giovanni Peri A Valentino Francesco Li Volsi rosaria Lo Verde E russo A Sciuto Annalisa Sunseri Giuseppe Modica Gianpiero Gravante Seok Ling Ong Matthew Metcalfe david Lloyd Ashley dennison Veronica Macchi Andrea Porzionato Anna Parenti raffaele de Caro Kawthar I F Al-Harmni Zohair I F rahemo Hussain I A Al-Khan Vedat Bakan Gulen demirpolat Mahmut Bozkurt Yakup Gumusalan Niyazi Acer Mehmet demir Hulusi Taskoparan Akcan Akkaya Birdal Yildirim Mehmet Camurdanoglu Gul Guven Hilmi Ozden Sahin Kabay Cengiz Ustuner dilek Burukoglu derya Ustuner Irfan degirmenci Fahrettin Akyuz Neslihan Tekin Fulya Kucuk Firdevs Gurer M Cengiz Ustuner davut Ozbag Mesut Ozkaya Harun Ciralik Fatma Inanc Tolun Fatih Yuzbasioglu Seda Arslan Ghazaleh Moshkdanian Fatemeh Pouya Amirmahdi Nematollahi-Mahani Seyed Noureddin Nematollahi-Mahani ralph Ger Jeremy Nikfarjam Kathy dooley Shuwei Liu Zhenping Li Xiangtao Lin Haiwei Meng Cheng Liu Lei Feng Min Suk Chung dong Sun Shin Eric Havet Anne-Claire dujardin Fabrice duparc Pierre Freger Anitha Oommen Christoph Stosch Jürgen Koebke Stefan Herzig Adam Jqbal Paul Gazzani Tim rattay Birgit Fruhstorfer Anil Vohrah richard M Wellings Stephen Brydges Gregory r Smith Jamie roebuck Peter H Abrahams Vaclav Baca Michal Otcenasek Filip Svatos Tereza Smrzova robert Grill david Kachlik Jan Skubal Valer dzupa Alena doubkova Ivo Klepacek Josef Stingl Muddathir Ali Yahya Bedir Günther Weber Karim Malek Amos Patrick Brent rochambeau Phil Knickelbein da-Yae Choi Mi-Sun Hur Kwan-Hyun Youn Kyung-Seok Hu Hee-Jin Kim Fadullah Aksoy Yavuz Selim Yildirim Orhan Ozturan Hurtan Acar Hasan demirhan Bayram Veyseller Jean Michel Prades Andrei Timoshenko Alexander Asanau Marie Gavid Christian Martin Benoit Ayestaray Isabelle Auquit-Auckbur Pierre-Yves Millez Burcu Ercakmak Alp Bayramoglu Hakan Ozsoy deniz demiryurek Eray Tuccar Keiichi Akita Kumiko Yamaguchi Atsuo Kato Tomoyuki Mochizuki Julien Beldame Jean-Philippe Mure Benjamin School of Medicine Universidad de Santiago de Chile Santiago Chile. jaime.pereda@usach.cl. Laboratory of Electron Microscopy Fujita Health University Toyoake Aichi Japan. Department of Anatomy Maulana Azad Medical College New Delhi India. Department of Computer Engineering University of Palermo Palermo Italy. Department of Experimental Medicine University of Palermo Palermo Italy. Department of Surgery and Oncology University of Palermo Palermo Italy. Department of Hepatobiliary and Pancreatic Surgery University Hospitals of Leicester Leicester UK. Department of Human Anatomy and Physiology Institute of Anatomy University of Padova Padova Italy. Department of Medical Diagnostic Sciences and Special Therapies Section of Pathology University of Padova Padova Italy. Department of Biology College of Science University of Mosul Mosul Iraq. Department of Pediatric Surgery Kahramanmaras Sutcu Imam University Faculty of Medicine Kahramanmaras Turkey. Department of Radiology Kahramanmaras Sutcu Imam University Faculty of Medicine Kahramanmaras Turkey. Department of Radiology Erzurum Numune State Hospital Erzurum Turkey. Department of Anatomy Kahramanmaras Sutcu Imam University Faculty of Medicine Kahramanmaras Turkey. Department of Anatomy School of Health Sciences Mugla University Mugla Turkey. Vocational School of Higher Education For Health Services Kilis 7 Aralik University Gaziantep Turkey. Department of Urology Mugla Governmental Hospital Mugla Turkey. Department of Anesthesiology Mugla Governmental Hospital Mugla Turkey. Department of Emergency Services Mugla Governmental Hospital Mugla Turkey. Department of Radiology Mugla Governmental Hospital Mugla Turkey. Department of Anatomy Eskisehir Osmangazi University Faculty of Medicine Eskisehir Turkey. Department of Anatomy Eskisehir Osmangazi University Faculty of Medicine Eskisehir Turkey. Department of Urology Dumlupinar University Faculty of Medicine Kutahya Turkey. Department of Medical Bio

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GaN HEMT Based doherty Amplifier for 3.5-GHz WiMAX Applications

GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applicati...

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European Conference on Wireless technology

作者： Junghwan Moon Jangheon Kim Ildu Kim Young Yun Woo Sungchul Hong Han Seok Kim Jong Sung Lee Bumman Kim Department of Electrical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea Telecommunication Research & Development Center Samsung Electronics Company Limited Suwon Gyeonggi South Korea Telecommunication R&D Center Samsung Electronics Co. LTD Suwon Gyeonggi Republic of Korea

We have implemented a doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the doherty amplifier. The implemented doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured relative Constellation Error (rCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.

关键词： Gallium nitride HEMTs WiMAX Power amplifiers Microwave amplifiers Linearity Power generation Power measurement Microwave devices MOdFETs

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Effects of Element Partition on the Fatigue Life Predictions of Lead-Free Solder Joints

Effects of Element Partition on the Fatigue Life Predictions...

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第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging technology ICEPT2007)

作者： Wen-ren Jong Hsin-Chun Tsai Ching-Tzu Huang Chung Yuan Christian University Dept.of Mechanical Engineering Chung-Li Taiwan China R&D Center Minghsin University of Science and Technology Dept.of Mechanical Engineering Hsin-Chu Taiwan Chi Chung Yuan Christian University Dept.of Mechanical Engineering Chung-Li Taiwan China

On the complicated manufacturing processes of the highdensity packages, the reliability of solder bumped IC chip on substrate and/or PCB has been confirmed by many researchers through thermal cycling tests, mechanical tests and computational modeling [1-5]. In this study, the highdensity package, 256-pin plastic ball grid array (PBGA) on printed circuit board (PCB) subjected to temperature cycling with the effects of element spacing ratio on the thermalfatigue life of lead-free (95.5Sn-3.9Ag-0.6Cu) solder joints are investigated by using the validated finite-element analyses. This research studies the determination of thermalfatigue life, creep responses and creep strain energy density per cycle with the various spacing ratio (-1, -5, -10, and -15)of the meshed lead-free solder joint for a range of cycling temperatures. Temperature loads are applied to the models that represent the cycling environment of chamber. After starting at room temperature, the model is subject of 5 cycles consisting of 10-minute ramps and 10- minute holds at each of 0℃ and 100℃. Five cycles are executed in order to confirm the stabilization of the creep responses. For all the cases, the lead-free solder is assumed to obey the GarofaloArrhenius creep constitutive law. As shown in Figures 1 and 20, the 256-pin PBGA package has a 27 × 27 × 0.36 mm3 substrate with a 10 × 10 × 0.3 mm3 silicon IC chip and a 1.17 mm thick overmold. The package has 0.635 mm diameter pads with a thickness of 0.008 mm on the substrate and the assembled lead-free solder joints are assumed to have a height of 0.5 mm and a maximum diameter of 0.9 mm. The PCB thickness is 1.6 mm. Figure 3 shows the 3-d finite element strip model that captures the construction along a diagonal strip from the 256-pin PBGA lead-free assembly's geometric center to a corner. It also provides a close-up view of the solder joint having the fine mesh along with the other coarser mesh due to its location further away from the chip. due to the rel

关键词： Fatigue Environmentally friendly manufacturing techniques Lead Soldering Creep Temperature Packaging Circuit testing Integrated circuit testing Manufacturing processes

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Adaptive Step Length Estimation Algorithm Using Low-Cost MEMS Inertial Sensors

Adaptive Step Length Estimation Algorithm Using Low-Cost MEM...

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IEEE Sensors Applications Symposium, SAS

作者： S. H. Shin C. G. Park J. W. Kim H. S. Hong J. M. Lee Navigation Electronic System Laboratory School of Mechanical and Aerospace Engineering Seoul National University Seoul South Korea School of Mechanical and Aerospace Engineering Seoul National University Seoul South Korea Advanced Technology Lab Telecommunication R&D Center Telecommunication Network Electronics Corporation Limited Suwon South Korea

In this paper we introduce a MEMS based pedestrian navigation system (PNS) which consists of the low cost MEMS inertial sensor. An adaptive step length estimation algorithm using the awareness of the walk or run status is presented. Future u-Health monitoring systems will be essential equipment for mobile users under the ubiquitous computing environment. It is well known that the cost of energy expenditure in human walk or run changes with the speed of movement. Also the accurate walking distance is an important factor in calculating energy expenditure in human daily life. In order to compute the walking distance precisely, the number of occurred steps has to be counted exactly and the step length should be exactly estimated as well. However the step length varies considerably with the movement's speed and status. Therefore, we recognize the movement status such as walk or run of a pedestrian using the small-sized MEMS inertial sensors. Based on the result, a step length is estimated adaptively. The developed method can be applied to PNS and health monitoring mobile system.

关键词： Micromechanical devices Costs Monitoring Humans Legged locomotion Navigation Sensor systems Mobile computing Ubiquitous computing Pervasive computing

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development of AE Monitoring System for CMP Process

Development of AE Monitoring System for CMP Process

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International Conference on Planarization / CMP technology

作者： Sunjoon Park Sukbae Joo Youngjin Kim Haedo Jeong Hyungjae Kim Department of Precision & Mechanical Engineering. Pusan National Univercity Jangjeon-Dong. Geumjeong-Gu 609-735. Korea School of Mechanical Engineering Pusan National University Jangjeon-Dong. Geumjeong-Gu 609-735. Korea Precision Molds and Dies Technology Team Korea Institute of Industrial Technology Busan R&D Center Korea

ISBN: (纸本)9783800730650

This paper compared wired Acoustic Emission (AE) signals with wireless AE signals. According to the materials and the process, signal characteristics were distinguishable between each materials and process. Therefore, wired and wireless AE sensors having different bandwidth is complementary for CMP process monitoring. In this paper, the AE sensor was used to investigate abrasive and molecular-scale phenomena in chemical mechanical planarization. Particularly, AE sensor was compatible to acquire high level frequency. Two types of AE sensor were installed in CMP equipment, and then, their signals were measured simultaneously during polishing process. First, wireless AE system was used to get signals in rotary system, using bluetooth. But, it is possible to acquire only rMS signals, which can not analyze abrasive and molecular-sale phenomena. Second, wired AE system using mercury slip-ring, which is suitable not only for rotation equipment but also for acquiring original signals, was installed. The acquired signals were analyzed by FFT for understanding of abrasive and molecular revel phenomena in CMP process. The authors tried to compare the results between wired and wireless AE signals. According to the material and process, signal characteristics were distinguishable. Finally, we verified that two types of AE sensor with different bandwidth were complementary for CMP process monitoring.

关键词： Monitoring Copper Sensor phenomena and characterization Wireless sensor networks Abrasives Wireless communication

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A Color-Free WdM-PON Employing Fabry-Prot Laser diodes Without a Seed Light Injection

A Color-Free WDM-PON Employing Fabry-Prot Laser Diodes Witho...

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33rd European Conference and Exhibition of Optical Communication

作者： Sil-Gu Mun Jung-Hyung Moon Ki-Man Choi Jin-Serk Baik Chang-Hee Lee School of Electrical Engineering and Computer Science Korea Korea Advanced Institute of Science and Technology 373-1 Guseoung-dong Youseoung-gu Daejeon 305-701 Korea Telecommunication R&D Center Samsung Electronics Co. Ltd. Suwon 442-743 Korea

We demonstrate a WdM-PON by employing a double-contact Fabry-Prot Laser diodes without a seed light injection. To avoid the high MPN at low frequency, we use a BPSK as a modulation format at a low rIN window. An error... 详细信息

关键词： Binary phase shift keying Bit error rate Optical signal processing Wavelength measurement Arrayed waveguide gratings Gratings Optical fiber subscriber loops

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Fabrication of a direct-type silicon pixel detector for a large area hybrid x-ray imaging device

Fabrication of a direct-type silicon pixel detector for a la...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： Kun-Sik Park Tae-Woo Kim Yong-Sun Yoon Jong-Moon Park Jin-Yeong Kang Jin-Gun Koo Bo-Woo Kim J. Kosonen Kwang-Soo No Electronics and Telecommunications Research Institute Semiconductor Process Team Daejeon South Korea Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea X-ray Sensor R&D Center Value Added Technologies Company Limited Hwaseong South Korea

We demonstrated the design and the fabrication processes of a direct-type silicon pixel detector for a digital dental radiography made using a high-resistive n-type silicon substrate. The structure of the detector is based on a fully-depleted p-i-n diode. The detector is composed of 644,328 pixels with a pitch of 35 mum. The size of the detector is 2.58 cm x 3.47 cm and it is composed of a 4-block assembly with four read-out CMOS ICs. We focused on experimentally evaluating the process conditions for the silicon pixel detector to reduce the leakage current and improve the breakdown voltage. From the experimental results, we found that the high temperature drive-in after p + ion implantation deteriorates the leakage current and p + passivation by thermal oxidation improves the breakdown voltage. The leakage current of a pixel was 0.07 pA/pixel and the breakdown voltage was more than 1700 V. The read-out IC consists of a current-integrating pixel readout CMOS chip and PbSn bumps. After bump-bonding four read-out ICs to a pixel detector and wire-bonding to a PCB, X-ray image tests showed a resolution of 11 lp/mm and provided a good image of human teeth.

关键词： Fabrication Silicon Pixel X-ray detection X-ray detectors X-ray imaging Leakage current dentistry radiography P-i-n diodes

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Atomic configurations of dislocation core and twin boundaries in 3C−SiC studied by high-resolution electron microscopy

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Physical review B 2007年第18期75卷 184103-184103页

作者： C. Y. Tang F. H. Li r. Wang J. Zou X. H. Zheng J. W. Liang Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences P.O. Box 603 Beijing 100080 China Department of Materials Physics and Chemistry University of Science and Technology Beijing Beijing 100083 China School of Engineering and Centre for Microscopy and Microanalysis The University of Queensland Brisbane QLD 4072 Australia R&D Center for Optoelectronic Technology Institute of Semiconductors Chinese Academy of Sciences P.O. Box 912 Beijing 100083 China

The defects in 3C−SiC film grown on (001) plane of Si substrate were studied using a 200kV high-resolution electron microscope with point resolution of 0.2nm. A posterior image processing technique, the image deconvolution, was utilized in combination with the image contrast analysis to distinguish atoms of Si from C distant from each other by 0.109nm in the [110] projected image. The principle of the image processing technique utilized and the related image contrast theory is briefly presented. The procedures of transforming an experimental image that does not reflect the crystal structure intuitively into the structure map and of identifying Si and C atoms from the map are described. The atomic configurations for a 30° partial dislocation and a microtwin have been derived at atomic level. It has been determined that the 30° partial dislocation terminates in C atom and the segment of microtwin is sandwiched between two 180° rotation twins. The corresponding stacking sequences are derived and atomic models are constructed according to the restored structure maps for both the 30° partial dislocation and microtwin. Images were simulated based on the two models to affirm the above-mentioned results.

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Study on High Performance (110) PFETs with Embedded SiGe

Study on High Performance (110) PFETs with Embedded SiGe

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International Electron devices Meeting (IEdM)

作者： S. Okamoto K. Miyashita N. Yasutake T. Okada H. Itokawa I. Mizushima A. Azuma H. Yoshimura T. Nakayama System LSI Division Toshiba Corporation Yokohama Japan Advanced LSI Technology Laboratory Corporate R&D Center Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan Phone: +81-45-776-5758 Fax: +81-45-776-4111 Process and Manufacturing Engineering Center Semiconductor Company Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan Phone: +81-45-776-5758 Fax: +81-45-776-4111 Center For Semiconductor R&D Semiconductor Company Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan Phone: +81-45-776-5758 Fax: +81-45-776-4111

The effects of inversion-layer capacitance and stress-induced mobility at short channel region (L g =35 nm) on (100) and (110) pFETs are investigated. 64 % mobility enhancement at E eff = 1.1 MV/cm and 0.15 nm thinner inversion-layer capacitance at E ox = 4.5 MV/cm are obtained for (110) embedded SiGe (eSiGe) pFETs, compared to (100) eSiGe pFETs. Calculated results suggest that (110) eSiGe pFETs will gain additional 63% higher mobility with 1 GPa uniaxial stress by controlling surface roughness scattering at SiO 2 /Si(110) interface.

关键词： Silicon germanium Germanium silicon alloys Capacitance Stress Scattering Boron Large scale integration research and development rough surfaces Surface roughness

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High Efficiency GaN HEMT Power Amplifier optimized for OFdM EEr Transmitter

High Efficiency GaN HEMT Power Amplifier optimized for OFDM ...

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2007 IEEE/MTT-S International Microwave Symposium (IMS 2007), vol.4

作者： Sungchul Hong Young Yun Woo Ildu Kim Jangheon Kim Junghwan Moon Han Seok Kim Jong Sung Lee Bumman Kim Telecommunication R&D Center Samsung Electronics co. LTD Suwon Gyeonggi Republic of Korea Department of Electrical Engineering Pohang University of Science and Technology(POSTECH) Gyeongbuk Republic of Korea

We have proposed a highly efficient power amplifier (PA) for the Envelope Elimination and restoration (EEr) transmitter using Gallium Nitride (GaN) HEMT. The class AB, B, C and F mode PAs have been implemented with EUdYNA's 10 watts GaN HEMT and compared the bias modulation performances in order to investigate the optimum PA structure. The proposed class F mode PA has been biased at class C and adopted a new output matching topology that improves the overall transmitter efficiency. For the WiMAX OFdM signal, the calculated overall drain efficiencies of the optimized EEr amplifier, which are based on the measured bias dependent efficiencies, are about 73% at an average power of 31dBm at 2.14GHz. The proposed highly efficient bias modulation PA for the EEr transmitter provides a superior overall efficiency than that of any conventional switching or saturation mode PAs.

关键词： Gallium nitride HEMTs High power amplifiers Transmitters OFdM modulation III-V semiconductor materials Impedance matching Topology WiMAX Power amplifiers

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