Programming with larger current than optimized one is often preferable to ensure a goodresistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effe...
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ISBN:
(纸本)4900784036;97
Programming with larger current than optimized one is often preferable to ensure a goodresistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.
In this paper, we show experimentally that the sound velocity of nanometer wavelength exceeds that of millimeter wavelength for a Pd-based metallic glass completely frozen far below the glass transition temperature. T...
In this paper, we show experimentally that the sound velocity of nanometer wavelength exceeds that of millimeter wavelength for a Pd-based metallic glass completely frozen far below the glass transition temperature. This indicates that nanoscale elastically harderregions exist in the glass matrix and, hence, elastically softerregions are also present so as to realize the macroscopic elasticity.
We investigate the temperature (T)-dependent low-energy electronic structure of a boron-dopeddiamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the lead...
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We investigate the temperature (T)-dependent low-energy electronic structure of a boron-dopeddiamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the leading edge below T=11 K, indicative of a superconducting gap opening (Δ∼0.78 meV at T=4.5 K). The gap feature is significantly broad and a well-defined quasiparticle peak is lacking even at the lowest temperature of measurement (=4.5 K). We discuss ourresults in terms of disorder effects on the normal state transport and superconductivity in this system.
A Blu-ray disc (Bd) / digital Versatile disc (dVd) / Compact disc (Cd) compatible optical pickup supporting Blu-ray 4x read/write has been developed. To achieve 4x speed for Bd, a one-lens-type objective lens was adop...
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A Blu-ray disc (Bd) / digital Versatile disc (dVd) / Compact disc (Cd) compatible optical pickup supporting Blu-ray 4x read/write has been developed. To achieve 4x speed for Bd, a one-lens-type objective lens was adopted to ensure stability for high-speed tracking servo control. Optical system, signal characteristics, and actuator vibration characteristics of the developed pickup are presented.
The effect of thermal history on the structure and free volume of bacterial poly(3-hydroxybutyrate-co-5mol%-3-hydroxyvalerate) (PHBV5) membranes, prepared by the compression-molding method, was investigated. Free volu...
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Porous polymer films were produced from water-in-oil emulsion. Aqueous droplets were dispersed in PMMA/benzene solution without any emulsifier. Simple dip-coating of the emulsion on a substrate and air-drying led to h...
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Porous polymer films were produced from water-in-oil emulsion. Aqueous droplets were dispersed in PMMA/benzene solution without any emulsifier. Simple dip-coating of the emulsion on a substrate and air-drying led to hexagonally ordered porous thin films. Porous single walled carbon nanotubes (SWNT)-polymer composite films were prepared through the similar procedures also. The electrical conductivity of porous SWNT-polymer composites increased with the content of SWNT.
Positron annihilation spectroscopy (PAS) has been used to study the depth profile (0 - 8 µm) in a membrane system containing a thin layer of polyamide prepared by the interfacial polymerization of triethylenetetr...
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To attain the homogeneous microstructure of ZnO-based multilayer varistors (MLVs), hot-press sintering is conducted. To determine the effect of hot-press sintering on the microstructure, the dielectric and varistor pr...
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To attain the homogeneous microstructure of ZnO-based multilayer varistors (MLVs), hot-press sintering is conducted. To determine the effect of hot-press sintering on the microstructure, the dielectric and varistor properties of ZnO-based MLVs were investigated and compared with those of ZnO-based MLVs fabricated by free sintering. In hot-press sintering, the average grain size and the distribution of grain size of a ZnO-based MLVs are both reduced. The results show that the leakage current and nonlinear coefficient alpha of ZnO-based MLVs can be improved. The increase in nonlinear coefficient (ce) is directly related to the inhibition of grain growth of ZnO grains when hot-press sintering is performed instead of free sintering. Note that the energy absorption capabilities in terms of peak current (PC) measurements of ZnO-based MLVs are remarkably improveddue to the homogeneity of microstructure when hot-press sintering is conducted.
In this study, the influence of CaZrO3 doped with three dopants, SiO2, MnO, and Nb2O5, and then sintered in a reducing atmosphere on microstructure, phase formation, and electrical properties is investigated. SiO2 pla...
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In this study, the influence of CaZrO3 doped with three dopants, SiO2, MnO, and Nb2O5, and then sintered in a reducing atmosphere on microstructure, phase formation, and electrical properties is investigated. SiO2 plays the role of sintering aid to enhance the density of CaZrO3 leading to better performance of electrical properties as a function Of SiO2 content. MnO, and Nb2O5 were incorporated into the Zr-site of CaZrO3 to make stoichometric CaZrO3 into non-stoichiometric CaZrO3 with Zr excess resulting in the formation of a second phase, CaZr4O9, which has a lowerdielectric constant (13) in comparison with that of the main phase of CaZrO3 (32). Thus, the dielectric constant of CaZr03 doped with Nb2O5, or MnO is decreased markedly. In addition, Mn+2 incorporated into Zr-sites of CaZrO3 plays the role of acceptor, which compensates for the number of conduction electrons and contributes to better performance of electrical properties such as insulation resistance and tan delta. Conversely, Nb+5 incorporated into Zr-sites of CaZrO3 plays the role of donor and provides more conduction electrons, leading to poor performance of electrical properties.
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