Ground bouncing noise was analyzed by a link program of finite difference time domain (FdTd) and SPICE. In this program, the electric characteristics of buffer ICs is computed by SPICE, whereas the distributed paramet...
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Ground bouncing noise was analyzed by a link program of finite difference time domain (FdTd) and SPICE. In this program, the electric characteristics of buffer ICs is computed by SPICE, whereas the distributed parameter of a printed circuit board (PCB) and electromagnetic (EM) wave radiation to the open air are computed by FdTd. Typical bouncing voltage and current waveforms can be obtained by this program. The computedresults agree with the measurement results.
A high speed video camera was used for analysis of quick phase eye movement in nystagmus. The frame rate of the camera was 250 Hz. Using a rotary slit-light projection system, optokinetic nystagmus (OKN) was easily ev...
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A high speed video camera was used for analysis of quick phase eye movement in nystagmus. The frame rate of the camera was 250 Hz. Using a rotary slit-light projection system, optokinetic nystagmus (OKN) was easily evoked and the consequent eye movement was analysed by an image processing system. The high velocity component in nystagmus can be precisely detected with 250 Hz video rate while those with 30 Hz conventional rate showed a poorresult in which the high velocity component declined significantly. The high speed video system was suitable for the analysis of the quick phase of nystagmus, especially in clinical diagnosis.
This paper presents a new wet etching technique for micromachining called SEEMS (Single-step Electrochemical Etching for Micro Structures). An accelerometer structure can be achieved using this SEEMS process. However,...
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This paper presents a new wet etching technique for micromachining called SEEMS (Single-step Electrochemical Etching for Micro Structures). An accelerometer structure can be achieved using this SEEMS process. However, some problems which are involved in the SEEMS process had to be solved. The two main problems are: firstly, over etching can be seen at the clamping point of freestanding beam, and secondly, from the theoretical point of view, it is difficult to remove large region or to make one hole in a large area. These problems can be considerably reduced by improved mask layout and perforated mass supported by single cantilever can be achieved. Additionally, new initial pit formation is demonstrated to make structures which are free from crystal orientation of silicon substrate.
Pulsed laserdeposition of thin dLC films with a thickness of up to 6 nm was observed to increase the emission current and stability from niobium-gated Si field emitter arrays. Thicker films, on the other hand, caused...
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Pulsed laserdeposition of thin dLC films with a thickness of up to 6 nm was observed to increase the emission current and stability from niobium-gated Si field emitter arrays. Thicker films, on the other hand, caused a decrease in emission current.
An evaluation and comparison of a two-level conventional voltage source inverter (VSI) and an auxiliary resonant commutated pole voltage source inverter (ArCPVSI) featuring IGCTs for a 3 MVA application is presented. ...
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An evaluation and comparison of a two-level conventional voltage source inverter (VSI) and an auxiliary resonant commutated pole voltage source inverter (ArCPVSI) featuring IGCTs for a 3 MVA application is presented. design issues of both topologies are addressed. The IGCT loss approximations are based on extensive measurements of the devices under hard and soft switching conditions. The results show that the ArCPVSI with IGCTs is a highly competitive alternative to conventional VSIs in this powerrange.
We proposed the Ta–ruO2 diffusion barrier for oxygen in the dynamic random access memory capacitor bottom electrode, and investigated the barrier and electrical properties of the developeddiffusion barrier. The Ta–...
We proposed the Ta–ruO2 diffusion barrier for oxygen in the dynamic random access memory capacitor bottom electrode, and investigated the barrier and electrical properties of the developeddiffusion barrier. The Ta–ruO2/TiSi2/poly-Si/SiO2/Si contact system deposited with and without the SiO2 capping layer showed the lower total resistance and ohmic characteristics up to 800 °C. For the Ta–ruO2/TiSi2/poly-Si/SiO2/Si contact system, no other phases observed except for the formation of conductive ruO2 phase in the barrier film by reaction with the indiffused oxygen after annealing in air, but the thin oxidized layer at the Ta–ruO2/TiSi2 interface was formed by external oxygen. However, a large number of the crystallites in the annealed samples compared to that of as-deposited film were observed even afterdepth profile. The crystallites consisted of ru and O containing a small amount of Ta. In addition, the embeddedruO2 crystalline phase was observed in the thin oxidized TiSi2 surface layer. Correspondingly, we suggest that the ohmic mechanism of the Ta–ruO2/TiSi2/poly-Si/SiO2/Si contact system is an embeddedruO2 crystalline phase involving a small amount of Ta in a Ta amorphous structure.
The line spectral frequencies (LSFs) extracted from successive analysis orders are interlaced with each other. This intermodel interlacing property gives a new relationship between the closeness of LSFs and their spec...
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The line spectral frequencies (LSFs) extracted from successive analysis orders are interlaced with each other. This intermodel interlacing property gives a new relationship between the closeness of LSFs and their spectral sensitivities, which enables us to propose a weighting function for LSF distortion measurement. By applying the proposed weighting function to an LSF quantizer, we can achieve better performance than when using the conventional heuristic functions. Moreover, the complexity of the proposed weighting function is much lower than that of the optimal weighting function, while their performances are almost the same.
Grinding process is frequently used to produce a smooth surface in the manufacturing system. recently, for using a super-abrasive wheel economically, grinding system needs to measure the surface roughness. However, it...
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This paper presents a newly developed image-basedrendering technique for constructing a virtual environment. The method synthesizes a new view by splitting source images and assembling the divided sections (stripes) ...
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Gated Si field emitter arrays (FEAs) have been operated in various gas atmospheres such as air, H2 , O2 , and Ar at 10−7 Torr to improve the emission behavior. The electron emission from the FEAs was enhanced by a fac...
Gated Si field emitter arrays (FEAs) have been operated in various gas atmospheres such as air, H2 , O2 , and Ar at 10−7 Torr to improve the emission behavior. The electron emission from the FEAs was enhanced by a factor of up to 10 during or after gas ambient emission with H2 , O2 , and Ar, while the improvement was not observed by a process with air. Fowler–Nordheim plots indicated a drastic change in slope only for H2 processes, in which hydrogen atoms would adsorb to Si tip surfaces. An emission pattern with a fourfold symmetry was observed for a single-tip emitter after hydrogen ambient emission, indicating the tip surface crystallinity after gas ambient emission.
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