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Conference record of the IEEE Industry Applications Society Annual Meeting (IAS)

作者： S. Bernet r. Teichmann J. Weber P.K. Steimer ABB Corporate Research Center Heidelberg Germany Department of Electrical Engineering Dresden University of Technology Dresden Germany R&D Drives and Power Electronics ABB Industrie AG Turgi Switzerland

An evaluation and comparison of a two-level conventional voltage source inverter (VSI) and an auxiliary resonant commutated pole voltage source inverter (ArCPVSI) featuring IGCTs for a 3 MVA application is presented. design issues of both topologies are addressed. The IGCT loss approximations are based on extensive measurements of the devices under hard and soft switching conditions. The results show that the ArCPVSI with IGCTs is a highly competitive alternative to conventional VSIs in this power range.

关键词： Voltage Thyristors Pulse width modulation inverters Insulated gate bipolar transistors resonance Topology Power semiconductor switches Commutation Costs Protection

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Barrier properties of Ta–ruO2 diffusion barrier for dynamic random access memory capacitor bottom electrodes

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 1999年第4期17卷 1470-1476页

作者： dong-Soo Yoon Hong Koo Baik Sung-Man Lee Sang-In Lee Department of Metallurgical Engineering Yonsei University Seoul 120-749 Korea Department of Materials Engineering Kangwon National University Chuncheon Kangwon-Do 200-701 Korea Development of Technology Semiconductor R&D Center Samsung Electronics Co. San#24 Nongseo-Lee Kiheung-Eup Yongin-City Kyungki-Do 449-900 Korea

We proposed the Ta–ruO2 diffusion barrier for oxygen in the dynamic random access memory capacitor bottom electrode, and investigated the barrier and electrical properties of the developed diffusion barrier. The Ta–ruO2/TiSi2/poly-Si/SiO2/Si contact system deposited with and without the SiO2 capping layer showed the lower total resistance and ohmic characteristics up to 800 °C. For the Ta–ruO2/TiSi2/poly-Si/SiO2/Si contact system, no other phases observed except for the formation of conductive ruO2 phase in the barrier film by reaction with the indiffused oxygen after annealing in air, but the thin oxidized layer at the Ta–ruO2/TiSi2 interface was formed by external oxygen. However, a large number of the crystallites in the annealed samples compared to that of as-deposited film were observed even after depth profile. The crystallites consisted of ru and O containing a small amount of Ta. In addition, the embedded ruO2 crystalline phase was observed in the thin oxidized TiSi2 surface layer. Correspondingly, we suggest that the ohmic mechanism of the Ta–ruO2/TiSi2/poly-Si/SiO2/Si contact system is an embedded ruO2 crystalline phase involving a small amount of Ta in a Ta amorphous structure.

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On the use of LSF intermodel interlacing property for spectral quantization

On the use of LSF intermodel interlacing property for spectr...

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IEEE Workshop on Speech Coding Proceedings

作者： Mi Suk Lee Hong Kook Kim Seung Ho Choi Hwang Soo Lee Department of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea AT and T Research Laboratories Florham Park NJ USA Human & Computer Interaction Laboratory Samsung Advanced Institute of Technology Gyeonggi South Korea Central R&D center SK Telecom Daejeon South Korea

The line spectral frequencies (LSFs) extracted from successive analysis orders are interlaced with each other. This intermodel interlacing property gives a new relationship between the closeness of LSFs and their spectral sensitivities, which enables us to propose a weighting function for LSF distortion measurement. By applying the proposed weighting function to an LSF quantizer, we can achieve better performance than when using the conventional heuristic functions. Moreover, the complexity of the proposed weighting function is much lower than that of the optimal weighting function, while their performances are almost the same.

关键词： Quantization Frequency Covariance matrix distortion measurement Linear predictive coding Euclidean distance Weight measurement Polynomials reflection Humans

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Intelligent Monitoring System for Grinding Process by recurrent Fuzzy Inference -Evaluation of Inferred Surface roughness Using degree of Fuzziprsss-

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Journal of robotics and Mechatronics 1999年第5期11卷 423-430页

作者： Kobayashi, Futoshi Arai, Fumihilo Fukuda, Toshio Onoda, Makoto Hottav, Yuzo Department of Micro System Engineering Nagoya University 1 Furo-cho Chikusa-ku Nagoya464-8603 Japan Center for Cooperative Research in Advanced Science & Technology Nagova University 1 Furo-cho Chikusa-ku Nagoya464-8601 Japan Production Machinery R&D Center NTN Corporation 1578 Higashi-Kaizuka Iwata438-8510 Japan

Grinding process is frequently used to produce a smooth surface in the manufacturing system. recently, for using a super-abrasive wheel economically, grinding system needs to measure the surface roughness. However, it is difficult to measure surface roughness in process because it takes a long time to measure it. We have to infer the surface roughness in process by online sensor information and evaluate the reliability of inferred surface roughness. We have proposed recurrent Fuzzy Inference (rFI) for estimating it. But, rFI cannot evaluate the reliability of inferred surface roughness. In this paper, we evaluate the reliability of inferred surface roughness by the degree of fuzziness that shows the lack of difference between the fuzzy set and the fuzzy complement. We show the experimental result of inferring, and evaluating the surface roughness in grinding process. © 1999, Fuji technology Press. All rights reserved.

关键词： Surface roughness

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View synthesis by assembling parts of pre-acquired images

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Systems and Computers in Japan 1999年第9期29卷

作者： Katsuyuki Kamei Minoru Maruyama Kazuo Seo Advanced Technology R&D Center Mitsubishi Electric Corporation Amagasaki Japan Faculty of Engineering Shinshu University Nagano Japan

This paper presents a newly developed image-based rendering technique for constructing a virtual environment. The method synthesizes a new view by splitting source images and assembling the divided sections (stripes) according to the viewing rays. The most important feature of the method is that it does not need a precisely-captured large set of source images. Instead, it focuses on the object and synthesizes a new image by selecting the most suitable stripe among the pre-acquired source images. This makes it possible to use only a limited set of source images. Also, it eliminates preliminary processes, such as obtaining correspondences between multiple images. As a result, it makes it easier to input a natural scene into the computer and to reproduce it as a virtual environment. We also describe improvements in image quality obtained by smoothing, examination of errors in the synthesized image, and a technique for arranging input points of source images. Moreover, an efficient method for data management is investigated. Fine images can be synthesized for a viewpoint that moves in any horizontal direction, so that a virtual environment with powerful walkthrough operations can be easily constructed. © 1998 Scripta Technica, Syst Comp Jpn, 29(9): 1–12, 1998

关键词： virtual environment view synthesis image-based rendering image stripe Peano scan

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Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1998年第2期16卷 799-799页

作者： Takai, Mikio Morimoto, Hiroji Hosono, Akihiko Kawabuchi, Shinji Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science Osaka University Toyonaka Osaka 560 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1 Tsukaguchi-Honmachi 8 Amagasaki Hyogo 661 Japan

Gated Si field emitter arrays (FEAs) have been operated in various gas atmospheres such as air, H2 , O2 , and Ar at 10−7 Torr to improve the emission behavior. The electron emission from the FEAs was enhanced by a factor of up to 10 during or after gas ambient emission with H2 , O2 , and Ar, while the improvement was not observed by a process with air. Fowler–Nordheim plots indicated a drastic change in slope only for H2 processes, in which hydrogen atoms would adsorb to Si tip surfaces. An emission pattern with a fourfold symmetry was observed for a single-tip emitter after hydrogen ambient emission, indicating the tip surface crystallinity after gas ambient emission.

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Effect of laser irradiation on electron emission from Si field emitter arrays

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1998年第2期16卷 780-780页

作者： Takai, M. Suzuki, N. Morimoto, H. Hosono, A. Kawabuchi, S. Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science Osaka University Toyonaka Osaka 560-8531 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1 Tsukaguchi-Honmachi 8 Amagasaki Hyogo 661 Japan

Ultraviolet (UV) laser lights were irradiated on Si field emitter arrays before and during electron emission to investigate the surface cleaning effect of laser light irradiation. UV light irradiation for 2–10 min before electron emission in a vacuum resulted in enhanced electron emission by 50%, which gradually decreased after further aging. Laser light irradiation during electron emission could induce enhanced electron emission by a factor of 2.4 due to photoinduced carrier generation and surface cleaning, and higher electron emission by a factor of 2 than the initial emission was observed even after laser light irradiation and prolonged aging for 20 h.

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Electron emission from gated silicide field emitter arrays

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1998年第2期16卷 790-790页

作者： Takai, M. Iriguchi, T. Morimoto, H. Hosono, A. Kawabuchi, S. Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science Osaka University Toyonaka Osaka 560-8531 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1 Tsukaguchi-Honmachi 8 Amagasaki Hyogo 661 Japan

Silicidation of the top surface of Si tips with a Nb gate structure has been carried out to improve the emission behavior of Si field emitter arrays (FEAs). A Pt layer with a thickness of 5–10 nm was deposited through the gate opening and annealed at 850 °C. The electron emission was enhanced by a factor of 10 and the average emission per tip was 3.5 μA for a 10×10 FEA. Fowler–Nordheim plots indicated the decrease in work function after silicidation.

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Numerical analysis on self-excited tone noise control in a two-dimensional airfoil wing 4th

Numerical analysis on self-excited tone noise control in a t...

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4th AIAA/CEAS Aeroacoustics Conference, 1998

作者： Nakashima, Shinji Akishita, Sadao Advanced Technology R&D Center Mitsubishi Electric Corp 8-1-1 Tsukaguchi-Honmachi Amagasaki661 Japan Dept. of Mechanical Engineering Ritsumeikan University 1-1-1 Noji-Higashi KusatsuShiga Pref525-8577 Japan

This paper describes the numerical analysis on the generation mechanism and on the control of discrete tone noise radiated from a two-dimensional wing immersed in uniform flow. Linearized approximate equation of the small perturbation of the boundary layer flow and of the wake flow is introduced to the interactive dynamical model between the perturbed flow and the sound near field emitted from the trailing edge. The numerical solution of the Green function of the Fourier-Laplace transformation of the perturbed flow variables is derived given the mean velocity profile of the boundary layer. The solution estimates well the configuration of the perturbed flow development and also predicts the experimental result of active control of the sound at the discrete sound frequency. © 1998 by the Confederation of European Aerospace Societies. All rights reserved.

关键词： Boundary layers

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Contributory presentations/posters

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Journal of Biosciences 1999年第1期24卷 33-198页

作者： N. Manoj V. r. Srinivas A. Surolia M. Vijayan K. Suguna r. ravishankar r. Schwarzenbacher K. Zeth diederichs G. M. Kostner A. Gries P. Laggner r. Prassl Madhusudan Pearl Akamine Nguyen-huu Xuong Susan S. Taylor M. Bidva Sagar K. Saikrishnan S. roy K. Purnapatre P. Handa U. Varshney B. K. Biswal N. Sukumar J. K. Mohana rao A. Johnson Vasantha Pattabhi S. Sri Krishna Mira Sastri H. S. Savithri M. r. N. Murthy Bindu Pillai Kannan M. V. Hosur Mukesh Kumar Swati Patwardhan K. K. Kannan B. Padmanabhaa S. Sasaki-Sugio M. Nukaga T. Matsuzaki S. Karthikevan S. Sharma A. K. Sharma M. Paramasivam P. Kumar J. A. Khan S. Yadav A. Srinivasan T. P. Singh S. Gourinath Neelima Alam A. Srintvasan Vikas Chandra Punit Kaur Ch. Betzel S. Ghosh A. K. Bera S. Bhattacharya S. Chakraborty A. K. Pal B. P. Mukhopadhyay I. dey U. Haldar Asok Baneriee Jozef Sevcik Adriana Solovicova K. Sekar M. Sundaralingam N. Genov dong-cai Liang Tao Jiang Ji-ping Zhang Wen-rui Chang Wolfgang Jahnke Marcel Blommers S. C. Panchal r. V. Hosur Bindu Pillay Puniti Mathur S. Srivatsun ratan Mani Joshi N. r. Jaganathan V. S. Chauhan H. S. Atreya S. C. Sahu K. V. r. Chary Girjesh Govil Elisabeth Adjadj Éric Quinjou Nadia Izadi-Pruneyre Yves Blouquit Joël Mispelter Bernadette Heyd Guilhem Lerat Philippe Milnard Michel desmadreil Y. Lin B. d. Nageswara rao Vidva raghunathan Mei H. Chau Prashant Pesais Sudha Srivastava Evans Coutinho Anil Saran Leizl F. Sapico Jayson Gesme Herbert Lijima raymond Paxton Thamarapu Srikrishnan C. r. Grace G. Nagenagowda A. M. Lynn Sudha M. Cowsik Sarata C. Sahu S. Chauhan A. Bhattacharya G. Govil Anil Kumar Maurizio Pellecchia Erik r. P. Zuiderweg Keiichi Kawano Tomoyasu Aizawa Naoki Fujitani Yoichi Hayakawa Atsushi Ohnishi Tadayasu Ohkubo Yasuhiro Kumaki Kunio Hikichi Katsutoshi Nitta V. rani Parvathy r. M. Kini Takumi Koshiba Yoshihiro Kobashigawa Min Yao Makoto demura Astushi Nakagawa Isao Tanaka Kunihiro Kuwajima Jens Linge Seán O. donoghue Michael Nilges G. Chakshusmathi Girish S. ratnaparkhi P. K. Madhu r. Varadarajan C. Tetreau Molecular Biophysics Unit Indian Institute of Science Bangalore India Austrian Academy of Sciences Institute of Biophysics and X-ray Structure Research Graz Austria Faculty of Biology University of Konstanz Germany Institute of Medical Biochemistry University of Graz Austria Howard Huges Medical Institute Department of Chemistry & Biochemistry University of California La Jolla USA Department of Chemistry & Biochemistry University of California San Diego La Jolla USA Molecular Biophysics Unit India Department of Microbiology &Cell Biology Indian Institute of Science Bangalore India Macromolecular Structure Laboratory NCI - Frederick Cancer Research and Development Center ABL - Basic Research Program Frederick USA Department of Crystallography and Biophysics University of Madras Chennai Biochemistry Department Indian Institute of Science Bangalore India Condensed Matter Physics Division B.A.R.C. Trombay Mumbai Condensed Matter Physics Division Bhabha Atomic Research Centre Trombay Mumbai IMCB The University of Tokyo Tokyo Japan Mitsubishi Chemical Corporation Yokohama Research Center Yokohama Japan Faculty of Pharmaceutical Sciences Chiba University Chiba Japan Department of Biophysics All India Institute of Medical Sciences New Delhi India Department of Biophysics All India Institute of Medical sciences New Delhi India Institüt Physiologische Chemie Hamburg Germany Biophysics Department Bose Institute Calcutta India Slovak Academy of Sciences Institute of Molecular Biology Bratislava Slovakia Indian Institute of Science Bioinformatics Centre Bangalore Departments of Chemistry and Biochemistry Biological Macromolecular Structure Center USA Bulgarian Academy of Sciences Institute of Organic Chemistry Sofia Bulgaria Chinese Academy of Sciences Institute of Biophysics Beijing China Novartis Pharma AG Preclinical Research Basel Switzerland Department of Chemical Sciences Tata Institute of Fundamental Research Mumbai India Solid State Physics Div

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