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MILLIPEdE: Easy Parallel Programming in Available distributed Environments

Software: Practice and Experience 1999年第8期27卷

作者： rOY FrIEdMAN MAXIM GOLdIN AYAL ITZKOVITZ ASSAF SCHUSTEr Department of Computer Science Cornell University Ithaca NY 14850 USA Intel R&D Center Israel Center of Advanced Technologies Haifa Israel. Department of Computer Science The Technion – Israel Institute of Technology Haifa 32000 Israel.

MILLIPEdE is a project aimed at developing a distributed shared memory environment for parallel programming. A major goal of this project is to support easy-to-grasp parallel programming languages that will also make it straightforward to parallelize existing code. Other targets are forward compatibility and availability of both the user programs (hence the shared memory support and the C-like parallel language PArC) and the system itself (which is thus implemented in user-level and using the operating system exported services). Locality of memory references, which implies efficiency and speedups, is maintained by MILLIPEdE} using page and thread migration, through which dynamic load-balancing and weak memory are implemented. ©1997 by John Wiley & Sons, Ltd.

关键词： parallel programming distributed computing distributed shared memory weak memory

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Finite element model for 2-dimensional slice of cast strand

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ISIJ International 1999年第5期39卷 445-454页

作者： Han, Heung Nam Lee, Jung-Eui Yeo, Tae-Jung Won, Young Mok Kim, Kyung-Hyun Oh, Kyu Hwan Yoon, Jong-Kyu Sheet Prod. and Proc. Research Team Technical Research Labs. POSCO Pohang-shi Kyungbuk 790-785 Korea Republic of Iron and Steelmaking Research Team Kwangyang Research Labs. POSCO Kwangyang-shi Cheonnam 545-090 Korea Republic of Sch. of Mat. Science and Engineering Res. Institute of Advanced Materials Seoul National University Kwanak-ku Seoul 151-742 Korea Republic of Technology Development Group M/U FAB. Department Semiconduct. R and D Samsung E. Yongin Kyungi-Do 449-900 Korea Republic of

A two-dimensional thermo-elasto-plastic finite element model for the analysis of thermo-mechanical behavior of strand in continuous casting process has been developed. The model incorporates the effect of microsegregation of solute elements on hot tears using a thermo-mechanical model of mushy zone and δ and γ phases. A finite element technique for the liquid region of the slice of strand, which can take the ferrostatic pressure due to gravity force into account, was proposed. The model successfully analyzed the thermo-mechanical behavior of the solidifying shell of slab in the mold during the solidification. The calculated results, such as the deformed geometries, the temperature history, the stress distribution and the formation of air gap between solidifying shell and mold in the continuous casting process of slab, were obtained. These were compared with the reported observations.

关键词： Metal casting

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Contributory presentations/posters

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Journal of Biosciences 1999年第1期24卷 33-198页

作者： N. Manoj V. r. Srinivas A. Surolia M. Vijayan K. Suguna r. ravishankar r. Schwarzenbacher K. Zeth diederichs G. M. Kostner A. Gries P. Laggner r. Prassl Madhusudan Pearl Akamine Nguyen-huu Xuong Susan S. Taylor M. Bidva Sagar K. Saikrishnan S. roy K. Purnapatre P. Handa U. Varshney B. K. Biswal N. Sukumar J. K. Mohana rao A. Johnson Vasantha Pattabhi S. Sri Krishna Mira Sastri H. S. Savithri M. r. N. Murthy Bindu Pillai Kannan M. V. Hosur Mukesh Kumar Swati Patwardhan K. K. Kannan B. Padmanabhaa S. Sasaki-Sugio M. Nukaga T. Matsuzaki S. Karthikevan S. Sharma A. K. Sharma M. Paramasivam P. Kumar J. A. Khan S. Yadav A. Srinivasan T. P. Singh S. Gourinath Neelima Alam A. Srintvasan Vikas Chandra Punit Kaur Ch. Betzel S. Ghosh A. K. Bera S. Bhattacharya S. Chakraborty A. K. Pal B. P. Mukhopadhyay I. dey U. Haldar Asok Baneriee Jozef Sevcik Adriana Solovicova K. Sekar M. Sundaralingam N. Genov dong-cai Liang Tao Jiang Ji-ping Zhang Wen-rui Chang Wolfgang Jahnke Marcel Blommers S. C. Panchal r. V. Hosur Bindu Pillay Puniti Mathur S. Srivatsun ratan Mani Joshi N. r. Jaganathan V. S. Chauhan H. S. Atreya S. C. Sahu K. V. r. Chary Girjesh Govil Elisabeth Adjadj Éric Quinjou Nadia Izadi-Pruneyre Yves Blouquit Joël Mispelter Bernadette Heyd Guilhem Lerat Philippe Milnard Michel desmadreil Y. Lin B. d. Nageswara rao Vidva raghunathan Mei H. Chau Prashant Pesais Sudha Srivastava Evans Coutinho Anil Saran Leizl F. Sapico Jayson Gesme Herbert Lijima raymond Paxton Thamarapu Srikrishnan C. r. Grace G. Nagenagowda A. M. Lynn Sudha M. Cowsik Sarata C. Sahu S. Chauhan A. Bhattacharya G. Govil Anil Kumar Maurizio Pellecchia Erik r. P. Zuiderweg Keiichi Kawano Tomoyasu Aizawa Naoki Fujitani Yoichi Hayakawa Atsushi Ohnishi Tadayasu Ohkubo Yasuhiro Kumaki Kunio Hikichi Katsutoshi Nitta V. rani Parvathy r. M. Kini Takumi Koshiba Yoshihiro Kobashigawa Min Yao Makoto demura Astushi Nakagawa Isao Tanaka Kunihiro Kuwajima Jens Linge Seán O. donoghue Michael Nilges G. Chakshusmathi Girish S. ratnaparkhi P. K. Madhu r. Varadarajan C. Tetreau Molecular Biophysics Unit Indian Institute of Science Bangalore India Austrian Academy of Sciences Institute of Biophysics and X-ray Structure Research Graz Austria Faculty of Biology University of Konstanz Germany Institute of Medical Biochemistry University of Graz Austria Howard Huges Medical Institute Department of Chemistry & Biochemistry University of California La Jolla USA Department of Chemistry & Biochemistry University of California San Diego La Jolla USA Molecular Biophysics Unit India Department of Microbiology &Cell Biology Indian Institute of Science Bangalore India Macromolecular Structure Laboratory NCI - Frederick Cancer Research and Development Center ABL - Basic Research Program Frederick USA Department of Crystallography and Biophysics University of Madras Chennai Biochemistry Department Indian Institute of Science Bangalore India Condensed Matter Physics Division B.A.R.C. Trombay Mumbai Condensed Matter Physics Division Bhabha Atomic Research Centre Trombay Mumbai IMCB The University of Tokyo Tokyo Japan Mitsubishi Chemical Corporation Yokohama Research Center Yokohama Japan Faculty of Pharmaceutical Sciences Chiba University Chiba Japan Department of Biophysics All India Institute of Medical Sciences New Delhi India Department of Biophysics All India Institute of Medical sciences New Delhi India Institüt Physiologische Chemie Hamburg Germany Biophysics Department Bose Institute Calcutta India Slovak Academy of Sciences Institute of Molecular Biology Bratislava Slovakia Indian Institute of Science Bioinformatics Centre Bangalore Departments of Chemistry and Biochemistry Biological Macromolecular Structure Center USA Bulgarian Academy of Sciences Institute of Organic Chemistry Sofia Bulgaria Chinese Academy of Sciences Institute of Biophysics Beijing China Novartis Pharma AG Preclinical Research Basel Switzerland Department of Chemical Sciences Tata Institute of Fundamental Research Mumbai India Solid State Physics Div

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QUANTUM rESONANT TUNNELING EFFECT ANd MULTI-VALUE LOGIC MEMOrY

QUANTUM RESONANT TUNNELING EFFECT AND MULTI-VALUE LOGIC MEMO...

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1998 5th International Conference on Solid-State and Integrated Circuit technology

作者： Li ruigang Wang Jiannong Wang Yuqi dong Wenfu Wu dexin Laboratory of Advanced Devices Microelectronics R&D CenterChinese Academy of Sciences Physics Department The Hong Kong University of Science & TechnologyClear Water BayKowloonHong Kong

A novel fabrication process,based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs,AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes(rTd),and t... 详细信息

关键词： rTd QUANTUM rESONANT TUNNELING EFFECT ANd MULTI-VALUE LOGIC MEMOrY

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0.1 /spl mu/m level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (rELACS)

0.1 /spl mu/m level contact hole pattern formation with KrF ...

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International Electron devices Meeting (IEdM)

作者： T. Toyoshima T. Ishibashi A. Minanide K. Sugino K. Katayama T. Shoya I. Arimoto N. Yasuda H. Adachi Y. Matsui Advanced Technology R&D Center Mitsubishi Electronic Corporation Amagasaki Hyogo Japan ULSI Development Center Mitsubishi Electronic Corporation Itami Hyogo Japan Ryoden Semiconductor System Engineering Corporation Itami Hyogo Japan

We developed a hole shrink process named rELACS (resolution Enhancement Lithography Assisted by Chemical Shrink) that is a robust and low-cost method. This method makes use of crosslinking reaction between the materials coated on the resist pattern, and the acid existing at the resist wall. By the rELACS, we could shrink KrF resist hole patterns to 0.1 /spl mu/m level. The shrinkage of hole size is dependent on both baking temperature and initial hole size. This process has been established for the fabrication of 0.20 /spl mu/m devices.

关键词： Pattern formation Lithography resists Shape Size control Temperature dependence Chemical processes

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The best combination of aluminum and copper interconnects for a high performance 0.18 /spl mu/m CMOS logic device

The best combination of aluminum and copper interconnects fo...

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International Electron devices Meeting (IEdM)

作者： M. Igarashi A. Harada H. Amishiro H. Kawashima N. Morimoto Y. Kusumi T. Saito A. Ohsaki T. Mori T. Fukada Y. Toyoda K. Higashitani H. Arima ULSI Development Center Mitsubishi Electronic Corporation Itami Hyogo Japan Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Advanced Technology R&D Center Mitsubishi Electronic Corporation Amagasaki Hyogo Japan

A high performance 0.18 /spl mu/m CMOS logic device has been developed with 0.15 /spl mu/m transistors and six-level interconnects. The multi-level interconnect system consists of a conventional process with Al wire and a dual damascene process with Cu wire. 4-level Al interconnects with fine metal pitch are suitable for short distance wiring such as intra block cell to cell interconnects, whereas 2-level Cu interconnects with coarse metal pitch are used for long distance wiring such as mega block to block interconnects to achieve high-speed and high-density LSI devices.

关键词： Aluminum Copper Wire Parasitic capacitance Wiring delay effects High-K gate dielectrics Logic devices Etching Oxidation

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Guest Editorial

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advanced Performance Materials 1998年第4期5卷 263-264页

作者： Kim, Nack J. Lee, Y.T. Kim, H.M. Center for Advanced Aerospace Materials and Dept. of Materials Science & Engineering Pohang University of Science and Technology Pohang Korea Department of Test and Evaluation Korea Institute of Machinery and Materials Changwon Korea National R&D Planning and Management Science and Technology Policy Institute Cheongryang Seoul Korea

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Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics

Impact of nitridation engineering on microscopic SILC charac...

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International Electron devices Meeting (IEdM)

作者： T. Ogata M. Inoue T. Nakamura N. Tsuji K. Kobayashi K. Kawase H. Kurokawa T. Kaneoka Y. Ohno H. Miyoshi ULSI Development Center Mitsubishi Electronic Corporation Itami Hyogo Japan Ryoden Semiconductor System Engineering Corporation Itami Hyogo Japan Memory IC Division Mitsubishi Electronic Corporation Itami Hyogo Japan Advanced Technology R&D Center Mitsubishi Electronic Corporation Amagasaki Hyogo Japan

We have statistically analyzed 28800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N/sub 2/O nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N/sub 2/O nitridation and is very promising for the reduction of bit failures.

关键词： Microscopy dielectric substrates MOS capacitors Electron traps Stress dielectric measurements Charge carrier processes dielectric films Leakage current Gases

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Novel stacked capacitor technology for 1-Gbit drAMs with (Ba,Sr)TiO3thin films

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Electronics and Communications in Japan (Part II: Electronics) 1998年第5期80卷

作者： Tsuyoshi Horikawa Teruo Shibano Takaaki Kawahara Tetsuro Makita Takeharu Kuroiwa Mikio Yamamuka Tatsuo Oomori Noboru Mikami Kouichi Ono Akimasa Yuuki Advanced ULSI Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation Amagasaki Japan 661 Strategic R&D Planning Group Advanced Technology R&D Center Mitsubishi Electric Corporation Amagasaki Japan 661

Novel stacked cell capacitors with (Ba,Sr)TiO 3 (BST) films were prepared as dielectrics for Gbit-scale drAMs. The BST films were deposited by the liquid source chemical vapor deposition (CVd) method, and ru was used as an electrode material for storage nodes and cell plates. For BST films on ru electrodes, a two-step film deposition process by repetition of low-temperature deposition and subsequent-high temperature annealing was shown to result in smooth surface morphology and conformal step coverage; in addition, no residues were formed on the mask side walls during ru etching in oxygen-containing plasmas. The surfaces of the ru electrodes were not oxidized during the BST deposition and annealing process, and these results indicate that ru is a most possible material for capacitor electrodes. The electrical properties obtained for the 25-nm-thick BST films on ru electrodes are: leak current density 2 × 10 −8 A/cm 2 , silicon dioxide equivalent thickness 0.5 nm. Using these techniques, minute stacked capacitors were fabricated with storage nodes 0.24 μm wide, 0.60 μm deep, and 0.2 μm high (spaced 0.14 mm apart), and their applicability for 1-Gbit drAM memory cells was examined. © 1997 Scripta Technica, Inc., Electron Comm Jpn Pt 2, 80(5): 70–78, 1997

关键词： stacked capacitor technology 1-Gbit drAM (Ba,Sr)TiO3 thin film BST film stacked cell capacitor

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Least-hop path planning using neural networks

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Electronics and Communications in Japan (Part I: Communications) 1998年第8期80卷

作者： Haruko Kawahigashi Ken-ichi Tanaka Kazuyoshi Oshima Mitsubishi Electric Corp. Information Technology R&D Center Kamakura Japan 247 Advanced Technology R&D Center Amagasaki Japan 661 Information & Communication Systems Development Center Kamakura Japan 247

recently, application of neural networks using their parallel processing feature has progressed. This paper proposes a routing method using a neural network and based on dynamic programming. The proposed method finds the least-hop path between two points in a communication network. The method consists of the application of disturbance to the destination, propagation of the disturbance to the source, and search for the shortest path from the source to the destination, using the distribution of the influences of the disturbance at each node. © 1997 Scripta Technica, Inc. Electron Comm Jpn Pt 1, 80(8): 1–6, 1997

关键词： neural network broad band-ISdN network design network theory data communication network network technology

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