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第四届国际高分子化学学术讨论会

作者： Hui-An Tsai Kueir-rarn Lee Juin-Yih Lai Graduate School of Materials Applied Technology Dept.of Material and Fiber Nanya Institute of Technology R&D Center for Membrane Technology Chung Yuan University

Conventional distillation process is hard to separate the azeotropic mixtures[1].To overcome this shortcoming,pervaporation have shown its attractive performance and have received *** is known that membrane possess high permeation rate as well as high separation factor in the pervaporation operation is the seeking goal for ***,several methods of

关键词： TMC PrEPArATION ANd CHArACTErIZATION OF PA/PAN COMPOSITE HOLLOW FIBEr PErVAPOrATION MEMBrANES

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An Auto-configuration 4M Group Management using Wireless Sensor Networks for reconfigurable Manufacturing System

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Journal of Measurement Science and Instrumentation 2010年第S1期1卷 192-198页

作者： Suk-Keun Cha Jeong-Hoon Lee Joon Jae Yoo Jung Hoon Kang Han Gyu Kim dong Hoon Kim Jun Yeob Song R&D Center ACS Co. Ltd.SeoulKorea Ubiquitous Embedded fusion center Korea Electronics Technology Institute Seoul Korea R&D Center SM Information & Communication Seoul Korea 4u-Production Team Korea Institute Machinery & Material Daejeon Korea

The first tier of automotive manufacturers has faced to pressures about move,modify,updating tasks for manufacturing resources in production processes from demand response of production order sequence for motor company and process innovation purpose for productivity. For meets this requirements,it has to require absolutely lead time to re-wiring of physical interface for production equipment,needs for change existing program and test over *** prepare this constraints,it needs studying an auto-configuration functions that build for both visibility and flexibility based on the 4M(Man,Machine,material, Method)group management which is supports from WSN (Wireless Sensor Network)of the open embedded device called M2M(Machine to Machine)and major functions of middleware including point manager for real-time device communication,real-time data management,Standard API (Application Program Interface)and application template *** be application system to rMS (reconfigurable Manufacturing System)for rapidly response from various orders and model from motor company that is beginning to establishing the mapping of manufacturing resources of 4M using WSN.

关键词： Auto-configuration Wireless Sensor Network reconfigurable Production resoureces of 4M TinyOS Machien to Machine Middleware Application Template Manager

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EFFECT OF SUBSTrATE STrUCTUrE OF CHITOSAN/SF-CA COMPOSITE MEMBrANES ON PErVAPOrATION PErFOrMANCE

EFFECT OF SUBSTRATE STRUCTURE OF CHITOSAN/SF-CA COMPOSITE ME...

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第四届国际高分子化学学术讨论会

作者： Chi-Lan Li Kueir-rarn Lee Juin-Yih Lai Department of Chemical and Material Engineering Nanya Institute of Technology R&D Center for Membrane Technology Chung Yuan University Department of Chemical Engineering Chung Yuan University

In this study,high pervaporation performance composite membranes were prepared by casting aqueous Chitosan solution on a skin-free cellulose acetate(SF-CA)membrane surface.A series of SF-CA membrane has been successfully fabricated using dual coagulation bath immersion precipitation *** effects of the immersion time in first coagulation bath on the membrane morphology and surface roughness were *** addition,the effect of the SF-CA membrane morphology on the water flux was also measured at a fixed *** relationship between the pervaporation performance and the free volume variation of Chitosan/SF-CA composite membranes were explored using the slow positron beam technique,FESEM,and gas *** experimental results show that the Chitosan/SF-CA composite membranes with a better pervaporation performance.

关键词： EFFECT OF SUBSTrATE STrUCTUrE OF CHITOSAN/SF-CA COMPOSITE MEMBrANES ON PErVAPOrATION PErFOrMANCE

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Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS

Palladium incorporated nickel silicide for a cost effective ...

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International Symposium on VLSI technology, Systems and Applications

作者： Yoshifumi Nishi Takeshi Sonehara Akira Hokazono Shigeru Kawanaka Satoshi Inaba Atsuhiro Kinoshita Advanced LSI Technology Laboratory Corporate R&D Center Toshiba Corporation Japan Center for Semiconductor Research and Development Toshiba Corporation Semiconductor Company Japan Device and Process Development Center Corporate R&D Center Toshiba Corporation Yokohama Japan

Incorporation of platinum (Pt) into nickel silicide (NiSi) improves the reliability and thermal stability of electrodes in Si MOSFETs. Increasing the Pt content is desirable for further scaled CMOS, but incorporation of more Pt would tremendously increase the material cost. In addition, since Pt is one of the key materials for eco-technology such as catalyst for exhaust absorption and so on, reduction of the use of Pt whose amount is limited is essential for ecology. recently palladium (Pd), which has similar chemical properties to those of Pt, has been attracting interest as a substitute of Pt. Several works have pointed out that NiPdSi bulk film has superior thermal stability to NiSi. However, its potentiality in fully integrated CMOS devices has not been studied yet. In this work, we investigate the detailed properties of NiPdSi on fully integrated CMOS structures fabricated with the advanced process technology as a candidate of the alternative silicide material for NiPtSi.

关键词： CMOS technology Palladium Nickel Silicides Costs Thermal stability Platinum Electrodes MOSFETs Absorption

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Functional and Performance Verification of Overlay Multicast Applications - A Product Level Approach

Functional and Performance Verification of Overlay Multicast...

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Consumer Communications and Networking Conference, CCNC IEEE

作者： Thilmee Baduge Lim Boon Ping Kunio Akashi Jason Soong Ken-ichi Chinen Ettikan K. K. Eiichi Muramoto Immersive Communication Task Force Panasonic Corporation Japan Advanced Technology Development Group Panasonic R&D Center Malaysia Japan Advanced Institute of Science and Technology Japan

In this paper we present a testbed for the functional and performance verification and validation of product level overlay multicast (or ALM in short) applications which is a complex task due to humongous test patterns. Structured, systematic and simplified test environment is vital for product level quality validation. The key features of this testbed are network emulation, automated test scenario execution, log collection and testbed/real environment interconnectivity. The testbed uses StarBEd as its mother testbed and netem as the network emulator. The key contributions of this work are calibration of netem in term of network emulation and establishing an architecture to use netem and StarBEd for ALM system verification. The calibration of netem was carried out up to 30 pipes (logical links) and the results show the network emulation can be done at maximum 1.2% packet loss. One of the simple ALM verification experiments executed on the testbed took only 43 hours for execution completion compared to human execution which would take 15 weeks.

关键词： Automatic testing Emulation Calibration Protocols Network topology Switches Communications Society System testing Humans Peer to peer computing

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Comparison of Two Kinds of Humidifier on Microorganism Transmission via Aerosol of different Size and Quantity

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American Journal of Infection Control 2011年第5期39卷 E191-E191页

作者： Hongchao Wang Baomin Chen Yinghong Wu Qing Yang R&D center Beijing Orient-Tide Science and Technology Development Co. Ltd. Beijing China Director Infection Control Dept. Beijing Di-Tan Hospital Beijing China Director of Beijing Nosocomial Infection Control Network Peking University People's Hospital Beijing China Chief Researcher Dept. of Toxicology Beijing CDC P.R. China Beijing China

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Investigation of the threshold voltage instability after distributed cycling in nanoscale NANd Flash memory arrays

Investigation of the threshold voltage instability after dis...

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Annual International Symposium on reliability Physics

作者： Christian Monzio Compagnoni Carmine Miccoli riccardo Mottadelli Silvia Beltrami Michele Ghidotti Andrea L. Lacaita Alessandro S. Spinelli Angelo Visconti Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy R&D-Technology Development Numonyx Agrate-Brianza Milan Italy IFN-CNR Milan Italy

This paper presents a detailed experimental investigation of the cycling-induced threshold voltage instability of deca-nanometer NANd Flash arrays, focusing on its dependence on cycling time and temperature. When the array is brought to a programmed state after cycling, instability mainly shows up as a negative shift of its threshold voltage cumulative distribution, increasing with time and resulting from partial recovery of cell damage created in the previous cycling period. The threshold voltage loss displays a strong dependence not only on the tunnel oxide electric field during retention, but also on the cycling conditions. In particular, performing cycling over a longer time interval or at higher temperatures delays the threshold voltage transients on the logarithmic time axis. The delay factor is studied as a function of the cycling duration and temperature on 60 and 41 nm technologies, extracting the parameter values required for a universal damage-recovery metric for NANd.

关键词： Threshold voltage Temperature dependence delay effects Flash memory Testing research and development Paper technology displays Semiconductor device reliability Semiconductor device modeling

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reliability constraints for TANOS memories due to alumina trapping and leakage

Reliability constraints for TANOS memories due to alumina tr...

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Annual International Symposium on reliability Physics

作者： Salvatore M. Amoroso Aurelio Mauri Nadia Galbiati Claudia Scozzari Evelyne Mascellino Elisa Camozzi Armando rangoni Tecla Ghilardi Alessandro Grossi Paolo Tessariol Christian Monzio Compagnoni Alessandro Maconi Andrea L. Lacaita Alessandro S. Spinelli Gabriella Ghidini R&D Technology Development Numonyx Agrate-Brianza Milan Italy Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy IFN-CNR Milan Italy

In this work we present a detailed investigation of TANOS memory reliability, focusing on issues raised by Al 2 O 3 trapping/detrapping and leakage. These effects are investigated as a function of alumina thickness, electric field and temperature, comparing experimental and modeling results for trap parameters extraction. For TANOS devices, Al 2 O 3 charge storage modifies program and erase saturation level particularly when higher Al 2 O 3 thikness are considered. Threshold instability in early steps for endurance and retarded behavior for retention can be also ascribed to the Al 2 O 3 trapping. Moreover, Al 2 O 3 layer has been shown to provide the main leakage path for bottom oxides thickness in the 4.5 nm or above range.

关键词： Memory management Stress High-K gate dielectrics Nonvolatile memory Electron traps Capacitors research and development Temperature Parameter extraction Semiconductor device modeling

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robust spin-on glass gap-fill process technology for sub-30nm interlayer dielectrics

Robust spin-on glass gap-fill process technology for sub-30n...

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2010 IEEE International Interconnect technology Conference, IITC 2010

作者： Byun, Kyung-Mun Jung, deok-Young Lee, Jun-Won Lee, Seungheon Kim, Hyongsoo Kim, Mun-Jun Hong, Eunkee Gang, Mansug Nam, Seok-Woo Moon, Joo-Tae Chung, Chilhee Lee, Jung-Hoo Lee, Hyo-Sug Process Development Team Semiconductor R and D Center Samsung Electronics Co. Ltd. Hwasung-City Gyeonggi-Do 445-701 Korea Republic of Manufacturing Technology Team Infra Technology Service Center Samsung Electronics Co. Ltd. San#16 Banwol-Dong Hwasung-City Gyeonggi-Do 445-701 Korea Republic of Material Application Group Materials Research Center Samsung Advanced Institute of Technology San#14 Nongseo-Dong Giheung-Gu Yongin-City Gyeonggi-Do 449-712 Korea Republic of

ISBN: (纸本)9781424476763

A highly robust gap-fill process technology of spin-on glass (SOG) was developed for the interlayer dielectric (ILd) in sub-30nm devices. We revealed that the filling behavior of SOG within gaps during spin-coating is mainly dependent on the capillary effect. The highly wettable surface treatment prior to SOG coating was found to enhance the gap-fill performance remarkably. This technique plays a key role in maximizing capillary effect by raising surface wettability. The filling capability was also improved by optimization of baking temperature to minimize the viscosity of SOG. It was finally found that the defects of contact bridges due to poor filling of SOG were reduced to be almost free by those unique process refinements. ©2010 IEEE.

关键词： Coatings

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A concept of a novel edge termination technique: Junction termination (rJT)

A concept of a novel edge termination technique: Junction te...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： Shigeto Honda ryoich Fujii Tsuyoshi Kawakami Seiji Fujioka Atsushi Narazaki Kaoru Motonami Power Semiconductor Device Development Department Mitsubishi Electric Corporation Limited Koshi Kumamoto Japan Power Semiconductor Device Development Department Manufacturing Engineering Center Mitsubishi Electric Corporation Limited Koshi Kumamoto Japan Power Semiconductor Device Development Department Advanced technology R&D center Mitsubishi Electric Corporation Limited Koshi Kumamoto Japan

ISBN: (纸本)9781424477180

This paper presents a novel junction termination technique, named recess Junction Termination (rJT), for power devices. This new junction termination improves the breakdown voltage of a planar junction by a silicon recess located to create a positive bevel, which reduces the peak of electric field. The rJT can reduce a thermal budget for the rESUrF (rEduced SUrface Field) layer by the silicon recess, and has compatibility with a fine-pitch process due to a planarization process using Chemical Mechanical Polish (CMP) treatments. After numerous simulations to optimize the structure parameters, we have succeeded in obtaining sufficient blocking capabilities of pn-rJT-diodes, the voltage ratings of which are from 75 V to 1700 V.

关键词： Silicon Planarization Boron Voltage Substrates Power semiconductor devices Power engineering and energy Surface treatment Fabrication Costs

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