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2009 Vehicles and Photons Symposium

作者： Ma, Jun Luo, Xixi Jung, Tae Bo Wu, Yong Ling, Zhihua Huang, Zhongshou Zeng, Wei Li, Yuesheng Advanced Technology Development R&D Center Shanghai Tianma Micro-Electronics Co. Ltd 889 Huiqing Rd. Pudong New Area Shanghai China Department of Materials Science Fudan University 220 Handan Road Shanghai China

A novel amorphous silicon driving circuitry, operated in Capacitively Coupled driving (CCd) method, is proposed and analyzed. By employing the circuitry for TFT-LCd gate and storage capacitor lines, line inversion driving mode can be realized with dC voltage on common electrode. With dC voltage on color filter common electrode, a capacitive touch panel is no longer suffered from driving pulse cross-talk in a conventional line inversion TFT-LCd. � 2009 SId.

关键词： Electrodes

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Electronic structure and effective chemical and magnetic exchange interactions in bcc Fe-Cr alloys

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Physical review B 2009年第5期79卷 054202-054202页

作者： P. A. Korzhavyi A. V. ruban J. Odqvist J.-O. Nilsson B. Johansson Department of Materials Science and Engineering Applied Material Physics Royal Institute of Technology SE-100 44 Stockholm Sweden and R&D Centre Sandvik Materials Technology SE-811 81 Sandviken Sweden

Electronic structure calculations are employed in order to investigate the cohesive properties (lattice parameter, enthalpy of formation, and bulk modulus) of random Fe-Cr alloys as a function of composition and magnetic state, as well as to derive the chemical and magnetic exchange interactions of the constituent atoms. The calculations predict certain anomalies in the cohesive properties of ferromagnetic alloys at a concentration of about 7 at % Cr; these anomalies may be related to the changes in Fermi-surface topology that occur with composition in this alloy system. The obtained interatomic interactions are used as parameters in the configurational (Ising) and magnetic (Heisenberg) Hamiltonians for modeling finite-temperature thermodynamic properties of the alloys. We discuss the approximations and limitations of similar modeling approaches, investigate the origin of existing difficulties, and analyze possible ways of extending the theoretical models in order to capture the essential physics of interatomic interactions in the Fe-Cr or similar alloys where magnetism plays a crucial role in the phase stability.

关键词： chromium alloys elastic moduli electronic structure enthalpy exchange interactions (electron) Fermi surface ferromagnetic materials heat of formation Heisenberg model iron alloys Ising model lattice constants perturbation theory

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A unified model for permanent and recoverable NBTI based on hole trapping and structure relaxation

A unified model for permanent and recoverable NBTI based on ...

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Annual International Symposium on reliability Physics

作者： daniele Ielmini Mariaflavia Manigrasso Francesco Gattel Grazia Valentini Dipartimento di Elettronica e Informazione Politecnico di Milano Milan Italy R&D Technology Development Numonyx Milan Italy

Negative bias temperature instability (NBTI) strongly limits reliability of PMOS devices by degradation of threshold voltage, subthreshold slope and transconductance. The physical understanding of the NBTI mechanism is essential for searching paths of NBTI alleviation and providing realistic predictions for CMOS reliability. This work presents a new NBTI model based on hole trapping/detrapping accompanied by structural relaxation in the host dielectric. Simulations account for a time and T dependence of the drain current degradation during NBTI stress. dynamic NBTI effects are then explained by alternative hole capture and emission during stress and relaxation stages. The impact of the activation energy dispersion on relaxation times is finally discussed.

关键词： Niobium compounds Titanium compounds degradation Stress Negative bias temperature instability MOS devices Threshold voltage Transconductance Semiconductor device modeling dielectrics

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Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

Investigation on hot carrier reliability of Gate-All-Around ...

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Annual International Symposium on reliability Physics

作者： Yun Young Yeoh Sung dae Suk Ming Li Kyoung Hwan Yeo dong-Won Kim Gyoyoung Jin Kyoungsuk Oh Advanced Technology Development Team 1 R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

Hot carrier (HC) reliability of gate-all-around twin Si nanowire field effect transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2 nm thickness show worse hot carrier reliability. The worst V d for 10 years guaranty, 1.31 V, satisfies requirement of ITrS roadmap.

关键词： Hot carriers FETs degradation Shape dielectrics Stress Silicon germanium Germanium silicon alloys Etching Tin

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Mechanical properties of rubber composites with stacked-cup carbon nanotubes

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Carbon 2010年第2期48卷 571-571页

作者： Mikiko Hashimoto Tetsuya Isshiki Masanori Tomita Takashi Yanagisawa Kazuo Kaneda Hidetaka Takahashi Fujio Okino Faculty of Textile Science and Technology Shinshu University 3-15-1 Tokida Ueda 386-8567 Japan GSI Creos Corporation Nano Bio Development Center (NBDC) 1-12 Minami-Watarida Kawasaki-ku Kawasaki 210-0855 Japan Fujikura Rubber Ltd. R&D Division 1-840 Mihashi Omiya-ku Saitama 330-0856 Japan

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Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices

Statistical and scaling behavior of structural relaxation ef...

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Annual International Symposium on reliability Physics

作者： Mattia Boniardi daniele Ielmini Simone Lavizzari Andrea L. Lacaita Andrea redaelli Agostino Pirovano Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy R&D-Technology Development Numonyx Milan Italy

The phase-change memory (PCM) technology represents one of the most attractive concepts for next generation data storage. PCM behavior is mainly limited by the structural relaxation (Sr) and by the crystallization of an amorphous chalcogenide material: the ternary alloy Ge 2 Sb 2 Te 5 . Sr is a local structural-rearrangement at the atomic/bonding scale and crystallization is the reaching of a periodic atomic structure. While the retention capabilities related to crystallization have been already extensively addressed in the literature, both at the single-cell and at the statistical level, those related to Sr have been mainly studied at the intrinsic level and a statistical analysis at the device level is still lacking. The purpose of this paper is to study the statistical and scaling behavior of the Sr phenomenon in PCM devices, through experimental and modeling tools, allowing for long term, physics-based, reliability extrapolations in large-scaled PCM arrays.

关键词： Phase change memory Phase change materials Strontium Crystallization Amorphous materials Crystalline materials Germanium alloys Tin alloys Tellurium Bonding

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Granular electron injection and random telegraph noise impact on the programming accuracy of NOr Flash memories

Granular electron injection and random telegraph noise impac...

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Annual International Symposium on reliability Physics

作者： Christian Monzio Compagnoni Luca Chiavarone Marcello Calabrese riccardo Gusmeroli Michele Ghidotti Andrea L. Lacaita Alessandro. S. Spinelli Angelo Visconti Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy Technology Development R&D Numonyx Milan Italy IFN-CNR Milan Italy

This work investigates for the first time charge-granularity effects during channel hot-electron programming of NOr flash memories, comparing the granular electron injection and the random telegraph noise limitations to the accuracy of the programming algorithm. The spread of the threshold voltage shift that is determined by the electron injection statistics is studied as a function of the channel hot-electron programming conditions, explaining the results by an analytical model accounting for the sub-Poissonian nature of the electron transfer to the floating gate. The scaling trend of the injection statistical spread is then investigated on NOr technologies ranging from 180 to 45 nm and its contribution to the width of the threshold voltage distribution in presence of a program verify level is separated from that given by random telegraph noise.

关键词： Telegraphy Flash memory Character generation Semiconductor device noise Threshold voltage Channel hot electron injection Functional programming Nonvolatile memory Testing research and development

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Comparison of double patterning technologies in NANd flash memory with sub-30nm node

Comparison of double patterning technologies in NAND flash m...

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European Conference on Solid-State device research (ESSdErC)

作者： Byungjoon Hwang Jeehoon Han Myeong-Cheol Kim Sunggon Jung Namsu Lim Sowi Jin Yongsik Yim donghwa Kwak Jaekwan Park Jungdal Choi Kinam Kim Flash Core Technology Lab. Semiconductor R&D Center Samsung Electronics Co. Ltd. Yongin-City Kyungki-Do Korea Process Development Team Semiconductor R&D Center Samsung Electronics Co. Ltd. Yongin-City Kyungki-Do Korea

Fine patterning technologies - e-beam lithography, SPT (spacer patterning technology) and SadPT (self aligned double patterning technology)-have been introduced to develop a single unit of nano-scale MOSFET. However, in order to achieve manufacturable high density NANd Flash memories, the merits and demerits of each technology should be considered in three points of view: device characteristics, process controllability and mass production. In this paper, we suggest the appropriate technology for particular cell types, CTF (charge trap flash) cell, floating poly-Si gate cell, and for process steps such as active, gate and bit-line.

关键词： Space technology Lithography Controllability Appropriate technology Etching research and development Electronic mail MOSFET circuits Manufacturing processes Mass production

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An estimation method of rotational direction and speed for free running AC machines without speed and voltage sensor

An estimation method of rotational direction and speed for f...

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International Conference on Electrical Machines and Systems (ICEMS)

作者： Hideaki Iura Zhe Chen Kozo Ide Tsuyoshi Hanamoto Inverter Development Department Drive Division Yaskawa Electric Corporation Japan Corporate R&D Center Yaskawa Electric Corporation Japan Graduate school of Life Science & Systems Engineering Kyushu Institute of Technology Japan

This paper presents an estimation method of rotational direction and speed for free running AC machines driven by an inverter without speed and voltage sensor. The method has four estimation modes, and the method utilized only the measured phase current of machines. The amplitude of current during the estimation is suppressed to lower levels such as the exciting current, which is smaller than the rated value. Good performance of this method is confirmed by the experiment.

关键词： AC machines Voltage Inverters Phase estimation Sensor systems Life estimation Power supplies Permanent magnet machines Frequency estimation research and development

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Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NANd flash memory

Vertical cell array using TCAT(Terabit Cell Array Transistor...

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Symposium on VLSI technology

作者： Jaehoon Jang Han-Soo Kim Wonseok Cho Hoosung Cho Jinho Kim Sun Il Shim Younggoan Jae-Hun Jeong Byoung-Keun Son dong Woo Kim Kihyun Jae-Joo Shim Jin Soo Lim Kyoung-Hoon Kim Su Youn Yi Ju-Young Lim dewill Chung Hui-Chang Moon Sungmin Hwang Jong-Wook Lee Yong-Hoon Son U-In Chung Won-Seong Lee Samsung Electronics Co. Ltd Giheung-Gu Yongin-City Gyeonggi-Do Korea Memory Research and Development Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Team 2&Process Development Team Memory R&D Center

Vertical NANd flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. damascened metal gate SONOS type cell in the vertical NANd flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.

关键词： SONOS devices Plugs Costs Etching Transistors Scalability Nonhomogeneous media dielectric substrates Sun Moon

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