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Proceedings of the 2008 Summer Computer Simulation Conference

作者： Yeong-cheol Kim Changbum Ahn Sim Yong Lee PGM Technology Research Institute Agency for Defense Development Yuseong Daejon Republic of Korea Naval Systems R&D Institute Agency for Defense Development Hyeon-dong Jinhae Kyeongnam Republic of Korea

The role of modeling, simulation and analysis (MS&A) in defense systems development is continuously evolving as simulation-based design, simulation-based acquisition, and simulation-based training in republic of Korea. MS&A is now considered as mandatory activity in the areas of the development of operational concept for the newly developed weapon systems, requirements analysis and verification, system simulations for performance evaluation, system and component design by simulation, test and evaluation as simulation, and the development of training systems throughout the life cycle of defense r&d program. However, one of the most difficult aspects of defense MS&A activities is to decide which parts of the r&d program should be supported by MS&A in the consideration of limited resources. In addition, reusability and extensibility of defense MS&A systems becomes not only technical issues but also programmatic ones as a way of reducing development cost. recently, most shipboard sensor and weapon systems are required to be integrated with surface ship combat systems in order to centralize all of information to command and control systems. However, shipboard systems integration requires extremely complex and time-consuming processes in order to integrate each system into combat systems. development of land-based target system (LBTS) is now represented as s solution to overcome difficulties of shipboard systems integration processes. In general, LBTS should act not only as a test system in order to support test and evaluation activities but also as a target system which could be used and evolved with the sub-systems or components of defense systems throughout the development life cycle. In this paper, MS&A activities which were exhibited throughout the development of LBTS in the part of Korean anti-submarine missile development program are represented.

关键词： target systems M&S framework surface combat systems anti-submarine warfare

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Lanthanum halides improve thermal neutron activation landmine detection - a comparison of fast inorganic scintillators

Lanthanum halides improve thermal neutron activation landmin...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： Anthony A. Faust John E. McFee H. robert Andrews Vitaly Kovaltchouk Ted Clifford Harry Ing Defence R&D Canada - Suffield Medicine Hat AB Canada Defence Research and Development Canada AB Canada Bubble Technology Industries Chalk River ON Canada

The Improved Landmine detector System is a vehicle-mounted multi-sensor landmine detector, conceived and developed by defence r&d Canada (drdC). Suspicious targets are identified by fusing data from scanning sensors. A Thermal Neutron Activation (TNA) detector, developed by drdC and Bubble technology Industries (BTI), then confirms the presence of a mine by detecting the bulk nitrogen in its explosives. While the first generation TNA detector has been fielded by the Canadian Forces, drdC and BTI have continued development and optimization of a second generation TNA sensor based around an electronic neutron generator source. By implementing faster detectors, faster electronics and more intense neutron sources, it is possible that this system could achieve 10 to 15 times higher rates, allowing correspondingly higher sensitivity or shorter detection times for landmines. The chief bottleneck to achieving the maximum possible performance from the present TNA or a future system is the relatively slow fluorescent decay time of the NaI(Tl) scintillators which are currently used. An experimental investigation was undertaken to compare a number of modern, fast inorganic scintillators to NaI(Tl) with respect to parameters relevant to TNA, including efficiency, energy resolution, linearity, available size and cost. This paper presents results in the context of the high-rate, high-gamma-energy environments expected in a TNA application. Large (7.62 cm × 7.62 cm) LaBr 3 :Ce scintillators, and to a lesser degree LaCl 3 :Ce, were found to stand-out as as the principal candidates for the detector upgrade to the TNA confirmation system. Their properties also make them ideal candidates for fast neutron activation and associated particle imaging bulk explosives detectors.

关键词： Lanthanum Neutrons Landmine detection detectors Vehicle detection Explosives Mining industry Nitrogen Fluorescence Energy resolution

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Electrical resistivity of sheet-type rubber composite heaters with carbon nanomaterials as filler

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Carbon 2009年第14期47卷 3381-3381页

作者： Yuki Ota Tetsuya Isshiki Masanori Tomita Takashi Yanagisawa Kazuo Kaneda Hidetaka Takahashi Takayuki Tsukada Fujio Okino Faculty of Textile Science and Technology Shinshu University 3-15-1 Tokida Ueda 386-8567 Japan GSI Creos Corporation Nano Bio Development Center (NBDC) 1-12 Minami-Watarida Kawasaki-ku Kawasaki 210-0855 Japan Fujikura Rubber Ltd. R&D Division 1-840 Mihashi Omiya-ku Saitama 330-0856 Japan Hodogaya Chemical Co. Ltd. 600 Tanakacho Akishimashi 196-8522 Japan

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Characterization and modelling of low-frequency noise in PCM devices

Characterization and modelling of low-frequency noise in PCM...

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International Electron devices Meeting (IEdM)

作者： P. Fantini G. Betti Beneventi A. Calderoni L. Larcher P. Pavan F. Pellizzer Numonyx R&D - Technology Development Agrate-Brianza Italy Dip. Scienze e Metodi dellIngegneria Università degli Studi di Modena e Reggio Emilia Reggio Italy

Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge 2 Sb 2 Te 5 ) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.

关键词： Low-frequency noise Phase change materials

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Highly Scalable NANd Flash Memory with robust Immunity to Program disturbance Using Symmetric Inversion-Type Source and drain Structure

Highly Scalable NAND Flash Memory with Robust Immunity to Pr...

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Symposium on VLSI technology

作者： Chang-Hyun Lee Jungdal Choi Youngwoo Park Changseok Kang Byeong-In Choi Hyunjae Kim Hyunsil Oh Won-Seong Lee Advanced Technology Development Team 2 CAE Team Semiconductor R&D Center Samsung Electronics Co. LTD. San #16 Banwol-Dong Hwasung-City Gyeonggi-Do Korea 445-701

ISBN: (纸本)9781424418022

The symmetric inversion-type S/d structure has been employed for achieving available program disturbance for scaled NANd flash memory beyond sub-40nm node. The inversion S/d structure enables the channel doping to be reduced due to non-existence of n-lateral diffusion and it suppresses charge sharing between program-inhibit channels, resulting in superior program disturbance. Moreover, the cells show better current drivability in the technology node less than 50nm by more successful working of gate fringing field with smaller word-line gap, compared to those with the n-diffused S/d junction.

关键词： NANd flash Inversion S/d Fringing field Program disturbance TANOS

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Performance of the rENA-3 IC with position-sensitive CZT and CdTe detectors

Performance of the RENA-3 IC with position-sensitive CZT and...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： Victoria B. Cajipe Martin Clajus Satoshi Hayakawa James L. Matteson r. Thomas Skelton Tumay O. Tumer Alexander Volkovskii Office of Technology Transfer and Intellectual Property Services UC San Diego La Jolla CA USA NOVA R&D Inc. Riverside CA USA NOVA R&D Inc. Riverside CA USA Center for Astrophysics and Space Sciences University of California La Jolla CA USA NOVA Research and Development Inc. Riverside CA USA

The rENA-3 (readout Electronics for Nuclear Applications) is a 36-channel self-resetting, charge sensitive amplifier/shaper IC with trigger output, wide energy range and sparse readout designed for use with position-sensitive, spectroscopy-grade radiation detectors. It has in recent years been favored to provide the front-end electronics in prototype instruments for various applications — from space physics research through medical imaging to homeland security — that employ CZT or CdTe in the form of planar sensor assemblies or monolithic pixel/strip arrays. We will present a summary of spectroscopic data drawn from the body of rENA-3-based results obtained in our laboratories and by other rENA-3 users. Spectroscopic performance metrics will be discussed relative to the requirements of the specific application targeted in each case as well as from the general standpoint of what may be achievable within this detector-array/rENA-3 approach. A method to automate the test and calibration of rENA-3 ICs will also be described.

关键词： Position sensitive particle detectors Spectroscopy Sensor arrays readout electronics Application specific integrated circuits radiation detectors Nuclear electronics Prototypes Instruments Physics

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An Endurance-Free Ferroelectric random Access Memory as a non-volatile rAM

An Endurance-Free Ferroelectric Random Access Memory as a no...

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Symposium on VLSI technology

作者： d. J. Jung W. S. Ahn Y. K. Hong H. H. Kim Y. M. Kang J. Y. Kang E. S. Lee H. K. Ko S. Y. Kim W. W. Jung J. H. Kim S. K. Kang J. Y. Jung H. S. Kim d. Y. Choi S. Y. Lee K. H. A. C. Wei H. S. Jeong Technology-Development Team 2 Semiconductor R&D Center Memory Division Samsung Electronics Co. Ltd. San #24 Nongseo-Dong Giheung-Gu Yongin-City Kyungki-Do S. Korea

ISBN: (纸本)9781424418022

We demonstrate endurance characteristics of a 1T1C, 64 Mb FrAM in a real-time operational situation. To explore endurance properties in address access time t{sub}(AA) of 100ns, we establish a measurement set-up that covers asymmetric pulse-chains corresponding to d1- and d0-rEAd/rESTOrE/WrITE over a frequency range from 1.0 to 7.7MHz. What has been achieved is that endurance cycles approximate 5.9×10{sup}24 of cycle times in an operational condition of V{sub}(dd)=2.0V and 85℃ in the developed 64Mb FrAM. donor concentration due to build-up of oxygen vacancy in a ferroelectric film has also been evaluated to 2.3×10{sup}20cm{sup}(-3) from I-V-t measurements.

关键词： endurance property Operating conditions Ferroelectric rAM random access machine time cycles Endurance frequency ranges ferroelectric thin films Storage access times

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Numerical optimization of single-mode photonic crystal VCSELs

Numerical optimization of single-mode photonic crystal VCSEL...

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International Conference on Numerical Simulation of Optoelectronic devices, (NUSOd)

作者： Peter Nyakas Tomofumi Kise Tamas Karpati Noriyuki Yokouchi Furukawa Electric Institute of Technology Limited Budapest Hungary Yokohama Research & Development Laboratories Photonic Device Research Center Furukawa Electric Corporation Limited Nishi Japan Yokohama R&D Labs. Furukawa Electr. Corp. Yokohama

The lattice constant of a single-defect photonic crystal vertical-cavity surface-emitting laser (PhC-VCSEL) is numerically optimized to achieve the highest single-mode power in the fundamental mode. The simulated results are compared to measured device characteristics, and the different factors influencing the single-mode behavior are analyzed.

关键词： Photonic crystals Vertical cavity surface emitting lasers Lattices Optical scattering Etching Laser modes Optical refraction Frequency Equations Optical resonators

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TId Sensitivity of NANd Flash Memory Building Blocks

TID Sensitivity of NAND Flash Memory Building Blocks

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European Conference on radiation and its Effects on Components and Systems

作者： M. Bagatin G. Cellere S. Gerardin A. Paccagnella A. Visconti S. Beltrami RREACT Group Dipartimento di Ingegneria dell'Informazione Universita di Padova Numonyx R&D - Technology Development Agrate Brianza (Mi)

ISBN: (纸本)9781457704819

NANd Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TId effects on the many different building blocks of NANd Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.

关键词： Flash memories Total dose effects X-rays

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Extraction of Voltage Transfer Characteristic of Inverter Based on TSNWFETs

Extraction of Voltage Transfer Characteristic of Inverter Ba...

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2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Yeonsung Kang Sung dae Suk Kang Il Seo donggun Park Hyungcheol Shin Seoul National Univ.Dept.of EE San 56-1Sillim-dongGwanak-guSeoul151-742Korea Advanced Technology Development Teaml R&D CenterSamsung Electronics Co.San 24Nongseo-DongKiheung-KuYongin-CityKyoungi-Do449-711Korea

In this paper,voltage transfer characteristic(VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is *** with 40 nm gate length and 10 nm nanowire diameter are used to construct ***,switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on *** addition,these performance parameters are extracted by varying the supply voltage.

关键词： VTC Extraction of Voltage Transfer Characteristic of Inverter Based on TSNWFETs

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