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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： M. Annese P. Montanini F. Toia L. Zullino C. Contiero STMicroelectronics FTM-R&D Smart Power & High Voltage Technology Platform Development Agrate-Brianza Agrate Brianza Italy

This paper presents a novel 20V/40V symmetrical vertical trench MOS (SVT MOS) having both drain extension and gate realized in vertical direction respect to the silicon surface. Using silicon depth to realize the gate and to withstand high voltage, carefully designing doping implants and realizing a vertical field oxide, it was possible to reduce more than 60% the device pitch (i.e. spacing between half drain contact and half source contact) maintaining the same performance of equivalent lateral device

关键词： MOS devices displays Voltage Silicon Etching Thin film transistors Lithography doping CMOS technology driver circuits

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800 KV HVdC for Transmission of Large Amount of Power Over Very Long distances

800 KV HVDC for Transmission of Large Amount of Power Over V...

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International Conference on Power System technology (POWErCON)

作者： Gunnar Asplund Urban Astrom Victor Lescale Honorable Doctor of Technology Royal Institute of Technology Sweden R&D manager of HVDC ABB. Manager 800 kV HVDC development project

800 kV HVdC is economically attractive for bulk power transmission of 6000 MW and even 9000 MW per bipole over distances up to 3000 km. With the present progress of r&d converter equipment for 800 kV HVdC will be qualified within short. With proper separation and proper structure of the control and protection and auxiliary systems, the reliability and availability will be as good as, or even better than, for converters at lower voltages.

关键词： HVdC transmission Voltage Power generation economics Hydroelectric power generation Cost function Power generation rivers Africa Power systems Asia

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Highly reliable 256Mb PrAM with Advanced ring Contact technology and Novel Encapsulating technology

Highly Reliable 256Mb PRAM with Advanced Ring Contact Techno...

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Symposium on VLSI technology

作者： Y.J. Song K.C ryoo Y.N. Hwang C.W. Jeong d.W. Lim S.S. Park J.I. Kim J.H. Kim S.Y. Lee J. Kong S. Ahn S.H. Lee J.H. Park J.H. Oh Y.T. Oh J.S. Kim J. Shin J. Park Y. Fai G. Koh G.T. Jeong r.H. Kim H.S. Lim I.S. Park H.S. Jeong H. Jeong K. Kim Advanced Technology Development Semiconductor Research and Development Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea Advanced Technology Development Semicond. R&D Div. Samsung Electron. Co. Ltd. Process Technology Semiconductor R&D Div Samsung Electronics Co. Ltd Yongin Kyunggi-Do Korea

ISBN: (纸本)142440004X

Advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PrAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Ge 2 Sb 2 Te 5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PrAM and beyond

关键词： Phase change random access memory dielectrics degradation Tellurium Electrodes CMOS technology Planarization Cleaning research and development Manufacturing processes

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Emergency Services in delay Tolerant Environments

Emergency Services in Delay Tolerant Environments

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IEEE Conference on Vehicular technology (VTC)

作者： Murugaraj Shanmugam Srinath Thiruvengadam Christophe Cordier Jean-pierre Le rouzic Siemens AG Corporate Technology Germany France Telecom Research & Development MAPS France France Telecom R&D / MAPS France

There are number of mechanisms and algorithms available to achieve ad hoc communication. However, establishing communication between heterogeneous networks with fragile connectivity, is still a challenging task. Existing transport protocols like TCP are not well suited to networks with instable bandwidth and connectivity. In such environments, services cannot be reliably offered and hence more intelligent protocols and architectures should be used. For such scenarios, we study the feasibility of using opportunistic forwarding to achieve end-to-end communication. In this paper, we investigate the usage of delay tolerant networks based protocols for achieving reliable communication in such scenarios. Specifically, we study the provision of emergency services and show how mobile users could make use of the ad hoc peers to reach an appropriate answering point e.g., public safety answering point using the delay tolerant approach. Moreover, we have extended the usage of dTN for complementary services such as buddy communication.

关键词： Emergency services delay disruption tolerant networking Mobile communication Protocols Peer to peer computing routing Telecommunication network reliability Safety Ad hoc networks

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INFLUENCE OF ELECTrICAL ANd STrUCTUrAL PArAMETErS ON THE PErFOrMANCE OF THE SPACErS IN HOPFEd

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Journal of Electronics(China) 2006年第1期23卷 117-120页

作者： Zhong Xuefei Wilbert van der Poel daniel den Engelsen Yin Hanchun Jin Dong Fei Display Technology R＆D Center Southeast University Nanjing 210096 China LG. Philips Displays Product ＆ Process Development Eindhoven the NetheHands

The HOPping Field Emission display （HOPFEd） is a new architecture for field emission displays. The main difference between a conventional Field Emission display （FEd） device and a ItOPFEd lies in the spacer structure. In a HOPFEd, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FEd substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFEd. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFEd.

关键词： Hopping field emission display Monte Carlo calculation Hop voltage, Anode voltage Spacer＇s layout

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Abstracts for the 6th Congress of Asian Sleep research Society

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Sleep and Biological rhythms 2009年第4期7卷 A1-A49页

作者： Seog Ju Kim In Kyoon Lyoo Yu-Jin Lee do-Un Jeong Hirohiko Kanai Masanori Ookubo Atsushi Yoshimura Masako Okawa Noto Yamada Takeshi Munezawa Yoshitaka Kaneita Yoneatsu Osaki Hideyuki Kanda Tadahiro Ohtsu Masumi Minowa Kenji Suzuki Susumu Hijuchi Hiroyuki Suzuki Takashi Ohida Takashi Abe Yoko Komada Shoichi Asaoka Yuichi Inoue Jin-Seong Lee Sang-Yong Cho deependra Kumar Hruda N. Mallick Velayudhan M. Kumar Mahesh K. Kaushik Akihiro Karashima Noiihiro Katayama Mitsuyuki Nakao ravindra P. Nagendra Sathiamma Sulekha Sathyaprabha T. Narasappa Pradhan Nityanadan Bindu M. Kutty M. Nirmala P. N. ravindra Basavaraj ramappa Tubaki T. N. Sathyaprabha d. Sudhakar G. S. Lavekar C. r. Chandrashekar Kazuyoshi Kitaoka Mika Shimizu Sachiko Chikahisa Kazuo Yoshizaki Hiroyoshi Sei Jong-Won Kim Misa Takegami Shin Yamazaki Yasuaki Hayashino rei Ono Koji Otani Miho Sekiguchi Shinichi Konno Shunichi Fukuhara Antonia J. Jakobson Paul Fitzgerald russell Conduit Xin Shirley Li Siu Ping Joyce Lam Wai Man Mandy Yu Yun Kwok Wing Kazue Okamoto-Mizuno Koh Mizuno Mituaki Yamamoto Shuichiro Shirakawa Hirokazu doi Mikako Kato Kazuyuki Shinohara Masako Tamaki Shiori Matsuda Katsuo Yamazaki Tadao Hori Keiko Ogawa Kazumi Takahashi Kunio Kitahama Katuo Yamazaki Yoshimasa Koyama Kohei Shioda Yugo Ueda Yukiko Nakamura Clara Inoue Kazushige Goto Sunao Uchida Yuko Morita Yoshiko Honda Tohru Kodama Mari Hagihara Toru Nakajima Masato Saito Yoshihiko Koga Shinichiro Tanaka Hiroshi Yamadera Madoka Takahara Sachiko Suwa Minoru Onozuka Sadao Sato Fumiharu Togo Taiki Komatsu Takeshi Mitani Jongbae Choi Bin Zhang Taeko Sasai Hiromi Mitsubayashi Mitsuhiro Ohtsu Isao Hasegawa Tatsuya Ishii Akira Komori Asami Suzuki Yue Nakahara Mitsuyasu Hiroki Mariko Nakauma Nobuo Someya Tomomasa Ochiai Shouhei Komori rayleigh Ping-Ying Chiang Zai-Ting Yeh Seong T. Kim Seung H. Yoon Jeong S. Kwon Jong H. Choi Hyung J. Ahn Youngsoo Kim Bolortuya Yunren Lichao Chen radhika Basheer robert W. Mccarley robert E. Strecker Makoto Honda Tetsuaki Arai Miyuki Fukazawa Yutaka Honda Kuniaki T Department of Psychiatry Gachon University of Medicine and Science Incheon Republic of Korea Department of Psychiatry Seoul National University Seoul Republic of Korea Department of Neuropsychiatry and Center for Sleep and Chronobiology Seoul National University Hospital Seoul Republic of Korea Department of Neuropsychiatry Seoul National University Hospital Seoul Republic of Korea Seoul National University Hospital Seoul Republic of Korea Department of Psychiatry Shiga University of Medical Science Otsu Japan Division of Public Health Department of Social Medicine Nihon University School of Medicine Tokyo Japan Department of Public Health Nihon University School of Medicine Tokyo Japan Division of Environmental and Preventive Medicine Department of Social Medicine Faculty of Medicine Tottori University Yonago Japan Department of Hygiene and Preventive Medicine Fukushima Medical University Fukushima Japan Department of Public Health Showa University School of Medicine Tokyo Japan Faculty of Humanities Seitoku University Matsudo Japan Section on Behavioral Science Division of Clinical Research National Hospital Organization Kurihama Alcoholism Center Yokosuka Japan Department of Otolaryngology Second Hospital Fujita Health University Nagoya Japan National Hospital Organization Kurihama Alcoholism Center Kanagawa Japan Metropolitan Police Department Criminal Investigation Laboratory Tokyo Japan Japan Somnology Center Neuropsychiatrie Research Institute Tokyo Japan Department of Somnology Tokyo Medical University Tokyo Japan Japan Somnology Center Neuropsychiatric Research Institute Tokyo Japan Department of Somnology Tokyo Medical and Dental University Tokyo Japan Center for Sleep and Chronobiology Department of Psychiatry and Behavioral Science Seoul National University College of Medicine Seoul Republic of Korea Department of Psychiatry and Behavioral Science Center for Sleep and Chronobiology Seoul Republic of Korea Department of Physiology Al

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Femtonische Laser im Maschinenbau – Mikrostrukturieren und Bohren

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PhotonicsViews 2007年第4期2卷

作者： Geschäftsführender Gesellschafter Friedrich dausinger Prof. dr. rer. nat. habil. Godehard Schmitz dr. dirk Sutter dr. Managing partner Forschungsgesellschaft für Strahlwerkzeuge (FGSW) Stuttgart Laser Technologies Pfaffenwaldring 43 D-70569 Stuttgart Friedrich Dausinger Tel.: +49 (0)711 35145112 Fax: +49 (0)711 35145113 Godehard Schmitz Tel.: +49 711 811-8616 Fax: +49 711 811-511-1604 Dirk Sutter Tel.: +49 (0)7422 515-366 Robert Bosch GmbH Corporate Sector Research and Development Joining Technology and Laser Material Processing (CR/APJ) Postfach 30 02 40 70442 Stuttgart GERMANY Web: www.bosch.deGmbH Forschung + Entwicklung TRUMPF Laser GmbH + Co. KG Aichhalder Straße 39 D-78713 Schramberg

Aus zunehmender Miniaturisierung von Produkten und ständig wachsenden Ansprüchen an Qualität und Leistungsfähigkeit resultieren Anforderungen an die Fertigungstechnik, die immer häufiger von klassischen Verfahren nicht mehr erfüllt werden können. dies wird in völlig unterschiedlichen Branchen beobachtet. In der Elektronikindustrie konnte z. B. die bei Mobiltelefonen zu beobachtende Miniaturisierung nur durch Laserbohren von durchkontaktierungslöchern in gestapelten Leiterplatten erreicht werden. Im Tiefdruck substituiert das Abtragen mit Laserpulsen zunehmend das mechanische Stechverfahren [1]. Höhere Flexibilität und Präzision des Strahlverfahrens ermöglichen hierbei eine deutlich höhere druckqualität. Bei der Kraftstoffeinspritzung erlaubt das Laserverfahren zu Spritzlochdurchmessern vorzudringen, die mit der bisher verwendeten Funkenerosion nicht mehr hergestellt werden können und trägt dadurch zur Steigerung von Effizienz und Umweltfreundlichkeit der Kraftfahrzeug-Verbrennungsmotoren bei. Gleiches gilt für das so genannte Laserhonen, mit dem auf Zylinderlaufflächen tribologisch wirksame Strukturen aufgebracht werden [2].

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Thermal annealing effect on the field emission characteristics of double-walled carbon nanotubes

Thermal annealing effect on the field emission characteristi...

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19Th International Vacuum Nanoelectronics Conference & 50th International Field Emission Symposium(第19届真空微纳国际年会暨第50届场致发射国际会议)

作者： S. K. Choi S. I. Jung S. H. Jo C. J. Lee J. M. Kim d. S. Zang H. S. Moon Department of Nanotechnology Hanyang University Seoul 133-791 Korea Department of Electronics Engineering Korea University Seoul 136-713 Korea Electric Material Development Team R&D Center Samsung SDI Yongin 449-902 Korea

The effect of thermal annealing on the field emission properties of double-walled carbon nanotubes (dWCNT) grown by chemical vapour deposition is studied. The properties of the dWCNTs were examined using SEM, TEM, ram... 详细信息

关键词： Annealing Carbon nanotubes Temperature Crystallization Arc discharges Organic materials Oxidation Amorphous materials Hydrogen displays

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development of high performance multi-layer process with H2 plasma hardening

Development of high performance multi-layer process with H2 ...

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55th Society of Polymer Science Japan Symposium on Macromolecules

作者： Ishibashi, Takeo Ono, Yoshiharu Yamaguchi, Atsumi Hanawa, Tetsuro Tadokoro, Masahiro Yoshikawa, Kazunori Yonekura, Kazumasa Okumura, Haruki Matsunobe, Tsuyoshi Fujii, Yasushi Tanaka, Takeshi Terai, Mamoru Kumada, Teruhiko Renesas Technology Corp. Process Development Dept. 664-0005 Hyogo Japan Materials Science Lab. Toray Research Center Inc. 3-3-7 Otsu Shiga 525-8567 Japan Tokyo Ohka Kogyo Co. Ltd. Advanced Material Development Division 1 Research and Development Department 1590Tabata Samukawa-machi Koza-gun Kanagawa 253-0014 Japan Advanced Tech. R/D Center Mitsubishi Electric Corp. 8-1-1 Tsukaguchi-Honmachi Amagasaki Hyogo 661-8661 Japan

In the device manufacture after 45nm node utilization of a high precision carbon hard mask (C-HM) process is an important issue. We examined additional H2 plasma hardening treatment to the bottom organic layer in a conventional multi-layer resist process. Improved results in LWr caused by etching, which is called "wiggling", were obtained. Chemical constitution was analyzed to understand the mechanism of improvement. Analyses were carried out using GSP+FTIr and raman spectroscopy. This hardening process will provide a very versatile C-HM process that is useful not only FEOL but also BEOL, which includes dual damascene process with via hole filling by the bottom organic layer.

关键词： Multilayers

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A Study of Intermetallic Compounds in Tin Bumps during Multi-reflows

A Study of Intermetallic Compounds in Tin Bumps during Multi...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Lei Nie Jian Cai Xiao Peng Nan Zhang Shuidi Wang Songliang Jia Institute of Microelectronics Tsinghua University Beijing China Electronic Packaging Technology Research & Development Center RIIT Tsinghua University Beijing China Institute of Microelectronics Tsinghua University Beijing 100084 China Electronic Packaging Technology R&D Center RIIT Tsinghua University Beijing 100084 China

An electroplating pure tin bumping technology has been developed in house with commercial chemicals. Sputtered TiW and Cu were used as under bump metallurgy (UBM). The tin bumps were peripheral distributed on the die. The electroplated bumps had mushroom shape, and the height is about 70mum. The as-reflow bumps had sleek shape, and the diameter is about 100mum. For as-reflow bumps, scanning electron microscope was used for observing the microstructure of interface, and energy dispersive X-ray microanalysis was used for investigating the composition of the intermetallic compounds. Multireflow tests were used as accelerating tests for tin bumps. The samples reflowed 1 times to 10 times respectively. Ball shear tests were used for evaluate the strength of different samples of multi-reflow tests. There are two layers of intermetallic compounds between copper and tin, which are Cu6Sn5 and Cu3Sn. For as-reflow bumps, the thickness of Cu3Sn layer is too thin to detect, and its growth need additional contact time. As the reflows time increased, Cu6Sn5 and Cu3Sn layers both grow, and the thickness of Cu6Sn5 is thicker than that of Cu3Sn. The total thickness of intermetallic compound has an exponential relationship with the times of reflow. The mechanism of intermetallic compounds growth is the diffusion of liquid tin to solid copper. The simplified diffusion model in the intermetallic interface is similar to one dimension nonequilibrium diffusion in the plate. The shear strength results of different samples which had multireflow tests were found to have little discrepancy with each other, that means the performance of tin bumps were stable

关键词： Intermetallic Tin Testing Copper Chemical technology Shape Scanning electron microscopy Microstructure dispersion Life estimation

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