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development of aT1Contrast Agent for Magnetic resonance Imaging Using MnO Nanoparticles†

Angewandte Chemie 2007年第28期119卷

作者： Hyon Bin Na Jung Hee Lee Kwangjin An Yong Il Park Mihyun Park In Su Lee do‐Hyun Nam Sung Tae Kim Seung‐Hoon Kim Sang‐Wook Kim Keun‐Ho Lim Ki‐Soo Kim Sun‐Ok Kim Taeghwan Hyeon National Creative Research Initiative Center for Oxide Nanocrystalline Materials and School of Chemical and Biological Engineering Seoul National University Seoul 151‐744 Korea Fax: (+82) 2‐886‐8457 Department of Radiology Samsung Medical Center Sungkyunkwan University School of Medicine Seoul 135‐710 Korea Fax: (+82) 2‐3410‐0084 Department of Chemistry and Advanced Material Science Kyunghee University Yongin 446‐701 Korea Department of Neurosurgery Samsung Medical Center Sungkyunkwan University School of Medicine Seoul 135‐710 Korea Department of Molecular Science and Technology Ajou University Suwon 443‐749 Korea NMR Laboratory Asan Institutes for Life Science University of Ulsan Seoul 138‐736 Korea Department of Pediatrics Asan Medical Center University of Ulsan Seoul 138‐736 Korea Biology and Clinical Pharmacology Samyang R&D Center Daejeon 305‐717 Korea

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Cover Picture: development of aT1Contrast Agent for Magnetic resonance Imaging Using MnO Nanoparticles (Angew. Chem. Int. Ed. 28/2007)

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Angewandte Chemie International Edition 2007年第28期46卷

作者： Hyon Bin Na Jung Hee Lee Prof. Kwangjin An Yong Il Park Mihyun Park In Su Lee Prof. do-Hyun Nam Prof. Sung Tae Kim Prof. Seung-Hoon Kim Prof. Sang-Wook Kim Prof. Keun-Ho Lim Ki-Soo Kim Prof. Sun-Ok Kim dr. Taeghwan Hyeon Prof. National Creative Research Initiative Center for Oxide Nanocrystalline Materials and School of Chemical and Biological Engineering Seoul National University Seoul 151-744 Korea Fax: (+82) 2-886-8457 Department of Radiology Samsung Medical Center Sungkyunkwan University School of Medicine Seoul 135-710 Korea Fax: (+82) 2-3410-0084 Department of Chemistry and Advanced Material Science Kyunghee University Yongin 446-701 Korea Department of Neurosurgery Samsung Medical Center Sungkyunkwan University School of Medicine Seoul 135-710 Korea Department of Molecular Science and Technology Ajou University Suwon 443-749 Korea NMR Laboratory Asan Institutes for Life Science University of Ulsan Seoul 138-736 Korea Department of Pediatrics Asan Medical Center University of Ulsan Seoul 138-736 Korea Biology and Clinical Pharmacology Samyang R&D Center Daejeon 305-717 Korea

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Titelbild: development of aT1Contrast Agent for Magnetic resonance Imaging Using MnO Nanoparticles (Angew. Chem. 28/2007)

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Angewandte Chemie 2007年第28期119卷

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Facet Passivation of GaInAsP/InP Laser diodes by Aluminum Ultrathin Layer Insertion

Facet Passivation of GaInAsP/InP Laser Diodes by Aluminum Ul...

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IEEE International Semiconductor Laser Conference

作者： H. Ichikawa C. Fukuda K. Hamada T. Nakabayashi Analysis technology research center Sumitomo Electric Industries Limited Yokohama Japan Transmission devices Research and Development laboratories Sumitomo Electric Industries Limited Yokohama Japan Transmission Devices R&D Labs. Sumitomo Electr. Ind. Ltd. Yokohama

We demonstrated that facet degradation is successfully suppressed by inserting aluminum ultra-thin layer between semiconductor and dielectric coating films. We also clarified that aluminum layer suppress lack of phosp... 详细信息

ISBN: (纸本)078039559X

关键词： Passivation Indium phosphide diode lasers Aluminum degradation Coatings Optical surface waves Argon Oxidation Optical films

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Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using...

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Symposium on VLSI technology

作者： T.C. Chen G. Shahidi S. Guha M. Ieong M.P. Chudzik r. Jammy P. ronsheim P.E. Batson Y. Wang d.L. Lacey J.-P. Locquet P. Jamison A. Callegari E. Cartier M. Steen M. Copel J. Arnold S. Brown J. Stathis S. Zafar Y.H. Kim B. doris B.P. Linder N.A. Bojarczuk V.K. Paruchuri V. Narayanan IBM Semiconductor Research and Development Center (SRDC) Yorktown Heights NY USA IBM Systems and Technology Division Hopewell Junction NY USA IBM Semicond. R&D Center T. J. Watson Res. Center Yorktown Heights NY

We have fabricated electrically reliable band-edge (BE) high-k/metal nMOSFETs stable to 1000degC, that exhibit the highest mobility (203 cm 2 /Vs @ 1MV/cm) at the thinnest T inv (1.4 nm) reported to date. These stacks are formed by capping HfO 2 with ultra-thin layers containing strongly electropositive gp. IIA and IIIB elements (e.g. Mg and La), prior to deposition of the TiN/Poly-Si electrode stack, in a conventional gate-first flow. Increasing the cap thickness tunes the V t /V fb from a midgap position to BE while maintaining high mobility and good PBTI. The addition of La can enhance the effective k value of the dielectric stack, resulting in EOTs < 1nm. Short channel devices with band edge characteristics are demonstrated down to 60 nm. Finally, possible mechanisms to explain the nFET V t shift are discussed

关键词： High K dielectric materials High-K gate dielectrics MOSFET circuits Hafnium oxide Tin Channel bank filters Electrodes Electron mobility Jamming research and development

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Highly Manufacturable Single Metal Gate Process Using Ultra-Thin Metal Inserted Poly-Si Stack (UT-MIPS)

Highly Manufacturable Single Metal Gate Process Using Ultra-...

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International Electron devices Meeting (IEdM)

作者： Sung Kee Han Hyung-Suk Jung Hajin Lim Min Joo Kim Cheol-kyu Lee Mong sub Lee Young-sub You Hion Suck Baik Young Su Chung Eunha Lee Jong-Ho Lee Nae In Lee Ho-Kyu Kang Advanced Process Development Team System LSI Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Semiconductor R&D Center Memory Division Samsung Electronics Company Limited South Korea AE Center Samsung Advanced Institute of Technology Gyeonggi South Korea

The authors have successfully developed a mass production friendly single metal gate process utilizing an ultra-thin metal inserted poly-Si stack (UT-MIPS) structure. First, the inserted metal gate thickness effects on device performances are carefully examined, and then the other parameters are optimized to give the best performance. As a results, low and symmetrical short channel Vth (0.44/-0.48 V for n/pMOS) and excellent drive currents (620/230 muA/mum for n/pMOS at Ioff =20pA/mum and Vdd=1.2 V) are obtained without using any mobility enhancement strain technology. The estimated operation voltage for 10 years lifetime of optimized UT-MIPS devices (1.25 V for nMOS PBTI and 1.5 V pMOS NBTI) are well beyond the 1.2 V, showing the good reliability characteristics of UT-MIPS devices as well

关键词： Manufacturing processes Mass production Optimized production technology dielectrics Large scale integration research and development Capacitive sensors Life estimation Lifetime estimation Voltage

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Ceramic Micro Heater technology for Gas Sensors

Ceramic Micro Heater Technology for Gas Sensors

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International Conference on Semiconductor

作者： Carmen Moldovan Oana Nedelcu Per Johander Igor Goenaga david Gomez Petko Petkov Ulrike Kaufmann Hans-joachim ritzhaupt-Kleissl robert dorey Katrin Persson National Institute for R and D in Microtechnologies Bucharest Romania IVF-Industrial Research and Development Corporation Sweden Micro and Nanotechnology Department Fundacion Teckniker Spain Manufacturing Engineering and Multidisciplinary Technology Centre Cardiff University UK Institut fur Material forschung Forschungszentrum Karlsruhe GmbH (FZK) Karlsruhe Germany Nanotechnology Group Cranfield University UK IMEGO Sweden

The paper presents the design and manufacturing steps of micro heaters, built on ceramic suspended membranes for gas sensor applications. The micro heaters are designed and fabricated by combining laser milling techniques, and conductive ceramic technology. Trenches are created in the ceramic substrate in order to define the geometry of the heater using laser processing of the substrate. The heater is completed by filling the trenches with conductive ceramic paste and then baking to remove the solvent from the paste. The final step involves releasing the membrane by laser milling, enabling it to be suspended on four bridges, to minimise the dissipation of the heat in the substrate. The temperature of the heater element was measured with a heat camera from FLIr 40 system comparing the case of the heater positioned on top of a released membrane and that of the non-released membrane. The simulation of the heater build on top of a released membrane was compared with the heater measurements

关键词： Ceramics Gas detectors Biomembranes Gas lasers Milling Pulp manufacturing Optical design Geometrical optics Filling Solvents

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reliability Issues and Models of sub-90nm NANd Flash Memory Cells

Reliability Issues and Models of sub-90nm NAND Flash Memory ...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Hong Yang Hyunjae Kim Sung-il Park Jongseob Kim Sung-Hoon Lee Jung-Ki Choi duhyun Hwang Chulsung Kim Mincheol Park Keun-Ho Lee Young-Kwan Park Jai Kwang Shin Jeong-Taek Kong CAE Team Memory DivisionSemiconductor BusinessSamsung Electronics Co.Ltd.San Nano CSE Project Team Samsung Advanced Institute of Technology R&D TEST Engineering Group Samsung Electronics Co.Ltd. Process Development Team Samsung Electronics Co.Ltd. Flash Process Architecture Team Semiconductor BusinessSamsung Electronics Co.Ltd.

ISBN: (纸本)1424401607

The reliability issues,including 100k cycle's endurance and 2 hours high temperature storage（HTS:150℃, 200℃and 250℃） of sub-90nm NANd Flash cells,are ***,the trap generation models in endurance and interface trap recovery model in HTS are *** characteristics show that the interface trap and bulk trap generation have a power-dependence on program/erase cycle count(△N,△N∝cycle^m).The exponent of interface trap generation both program and erase are 0.62;while in bulk trap generation,the exponent for the cycle count is 0.30,which is extracted only from the erased cells due to varying stored charges of programmed cells during tunnel oxide *** HTS characteristics show that the interface trap recovery and electron-detrapping are the major mechanisms for sub-90nm NANd Flash memory,while stress induced leakage current（SILC） is almost ***,based on the reaction-diffusion （r-d）model and Arrhenius approximation,the simplified interface recovery model in HTS is proposed as:dN/N=-k·exp（-E/kT）.dt.

关键词： HTS reliability Issues and Models of sub-90nm NANd Flash Memory Cells

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Trap Layer Engineered FinFET NANd Flash with Enhanced Memory Window

Trap Layer Engineered FinFET NAND Flash with Enhanced Memory...

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Symposium on VLSI technology

作者： Y. Ahn J.-d. Choe J. Lee d. Choi E. Cho B. Choi S.-H. Lee S.-K. Sung C.-H. Lee S. Cheong d. Lee S. Kim d. Park B.-I. ryu Device Research Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea Semiconductor R&D Center Samsung Electronics Co. Yongin-City Gyeonggi-Do 449-711 Korea Process Development Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea Manufacturing Technology Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea

This paper presents the trap layer engineered body-tied FinFET device for MLC NANd flash application. The device design parameters for high density NANd flash memory have been considered, and the advantages of FinFET structure and high-k blocking dielectric in such device have been demonstrated. Based on the WN nano-dot memory device, the trap layer engineering using nitride layer has been performed, and the results show that the memory window is improved from 2.6 V to 7.8 V by utilizing engineered trap layer at 14 MV/cm F-N programming, and it is proposed as a possible MLC NANd device structure

关键词： FinFETs Electron traps Manufacturing processes Pulp manufacturing Semiconductor device manufacture research and development High K dielectric materials High-K gate dielectrics dielectric devices Nanoscale devices

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Effect of Laser Bias Current to the Third Order Intermodulation in the radio over Fibre System

Effect of Laser Bias Current to the Third Order Intermodulat...

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International rF and Microwave Conference, rFM

作者： S. Yaakob W. r. Wan Abdullah M. N. Osman A. K. Zamzuri r. Mohamad M. r. Yahya A. F. Awang Mat M. r. Mokhtar H. A. Abdul rashid TM Research and Development Sdn Bhd UPM-MTDC Technology Incubation Center One Serdang Selangor Darul Ehsan Malaysia TM R&D Sdn Bhd Serdang Selangor Malaysia TM R&D Sdn Bhd Idea Tower UPM-MTDC Incubation Centre One Lebuh Silikon 43400 Serdang Selangor Malaysia. wanrazli@tmrnd.com.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my TM R&D Sdn Bhd Idea Tower UPM-MTDC Incubation Centre One Lebuh Silikon 43400 Serdang Selangor Malaysia. drfatah@tmrnd.com.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my Faculty of Engineering Multimedia University Cyberjaya Selangor Malaysia Faculty of Engineering Multimedia University Jalan Multimedia 63100 Cyberjaya Selangor Malaysia. hairul.azhar@mmu.edu.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my

Third order intermodulation (IM 3 ) can cause non-linearity effects which result in interference and crosstalk between the subcarriers in radio over fibre (rOF) transmissions. This paper presents the experimental results of the effect of varying the magnitude of the laser bias current on the IM 3 in an rOF system with direct modulation. We also investigate the behaviour of the system spurious free dynamic range (SFdr) with the bias current variation. The results show that there will be an optimum bias current range for a given range of the radio frequency (rF) input power in order to minimise the IM 3 effect and obtain the best possible SFdr for the system

关键词： Fiber lasers Optical fibers radio frequency Optical modulation Semiconductor lasers Fiber nonlinear optics Optical crosstalk Intensity modulation Masers Multimedia systems

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