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32nd European Conference on Optical Communication (ECOC 2006),vol.4

作者： r. Inohara K. Nishimura Y. Horiuchi M. Usami A. Al Amin M. Takenaka K. Shimizu T. Kagimoto T. Kurobe A. Kasukawa H. Arimoto S. Tsuji Y. Kondo M. Ono J. Kageyama N. Sugimoto I. Ogura T. Hatta H. Onaka Y. Nakano KDD Research and Development Laboratories Inc. Fujimino Saitama Japan KDDI R&D Laboratories Inc. Saitama Japan RCAST the University of Tokyo Optoelectronic Industry and Technology Development Association (OITDA) RCAST the University of Tokyo Japan The Furukawa Electric Co. Ltd. Japan 4: Hitachi Ltd. Japan 5: Asahi Glass Co. Ltd. Japan 6: NEC Corporation Japan 7: Mitsubishi Electric Corporation Japan Fujitsu Laboratories Limited Japan

An optical switching node with sub-millisecond granularity is demonstrated. The node is equipped with shared wavelength converter for contention resolution with microsecond tuning speed and compact gain block for loss... 详细信息

关键词： Optical waveguides Optical burst switching Optical wavelength conversion Semiconductor optical amplifiers Optical amplifiers Optical packet switching Stimulated emission Matrix converters Transmission line matrix methods Optical switches

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Low-temperature and rapid solid-state synthesis of YAG:Ce powders using oxides with narrow particle size distribution

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physica status solidi c 2006年第8期3卷

作者： Toshihiro Moriga Takashi Kunimoto Yuta Sakanaka Tatsuro Yoshida Kei-ichiro Murai Masashi Mori Eisaku Suda Department of Chemical Science and Technology Faculty of Engineering The University of Tokushima 2-1 Minami-Josanjima Tokushima 770-8506 Japan Department of Nano Material Bio Engineering Tokushima Bunri University 1314-1 Shido Sanuki Kagawa 769-2193 Japan Central Research Institute of Electric Power Industry 2-6-1 Nagasaka Yokosuka Kanagawa 240-0196 Japan R&D Department Anan-Kasei Co. Ltd. 210-51 Ogata Anan Tokushima 774-0022 Japan

We applied a new precipitation technique to the syntheses of CeO 2 and Y 2 O 3 as starting oxides for YAG:Ce powders. This technique can be characterized by usage of NH 4 HCO 3 as a precipitating agent and by aging of the precipitant at 80°C for 3 hours. Gibbsite (Al(OH) 3 ) was used as an Al source. The particle size distribution of CeO 2 synthesized by this process was very narrow, and was in the sub-micrometer range. Y 2 O 3 particles, whose sizes ranged from 0.2μm to 10μm were larger and broader in distribution than CeO 2 . Gibbsite, which transforms finally into Al 2 O 3 also had a narrow particle size distribution from 0.3μm to 3μm. X-ray diffraction pattern of YAG:Ce powder synthesized from these (hydr)oxides at 1400 °C for 5 hours in air showed the material is monophasic. The best luminescent intensity, excited by blue light, was obtained in 1.5mol% Ce-doped YAG:Ce phosphor (Y 2.955 Ce 0.045 Al 5 O 12 ) and is comparable to that of materials synthesized by the citric-gel method using metal nitrates as starting materials and firing at 1400 °C for 5 hours in air. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

关键词： 78.55.Hx 81.20.Fw

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New architecture of realizing seamless connectivity and cooperative control for home network systems

New architecture of realizing seamless connectivity and coop...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： H. Ikebe K. Ogawa H. Takernura Y. Hatayama Digital Systems Development Center Technology R&D Headquarters SANYO Electric Co. Ltd Japan

This paper proposes a new home network architecture for realizing flexible scalability and seamless connectivity and cooperative control. In a home, there are devices which have varying processing power so these devices may support different protocols. They are required to be able to be controlled seamlessly regardless of the protocol. By controlling these devices, cooperative control is desired. A home network system is also required to be able to configure the system scale according to the user's needs. This architecture makes it possible to provide seamless connectivity by protocol translation and to control devices cooperatively by managing rules in a home server. It also supports flexible scalability, with a new discovery mechanism, from a small-scale system without a home server, to a large-scale system with a home server. We developed and confirmed a prototype system using this architecture.

关键词： Control systems Home automation Network servers Protocols Scalability Large-scale systems Power system management digital systems research and development Prototypes

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Full Hd 1920 × 1080 Pixel digital d-ILA™ Microdisplay Projector technology

Full HD 1920 × 1080 Pixel Digital D-ILA™ Microdisplay Proj...

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SMPTE Technical Conference

作者： S. Shimizu S. Nakagaki K. doi W.P. Bleha Victor Company of Japan Ltd Technology Development Division Yokosuka Japan JVC North America R&D Center Cypress CA 90630

JVC1 has developed a fully digital drive d-ILA LCOS microdisplay device, which has a native resolution of full Hd (1920 times 1080 pixels) and contrast ratio greater than 5000:1. The new devices have been combined in 3 device rGB configuration with advanced video processing circuitry for consumer rear projection TV applications.

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Microcell urban propagation channel analysis using measurement data

Microcell urban propagation channel analysis using measureme...

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IEEE Conference on Vehicular technology (VTC)

作者： M. Ghoraishi J.-i. Takada T. Imai Department of International Development Engineering Tokyo Institute of Technology Tokyo Japan R&D Center NTT DoCoMo Inc. Kanagawa Japan

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Magnetocaloric effects and magnetic properties in intermetallic compounds La(Fe/sub 1-x-y/Co/sub x/Si/sub y/)/sub 13/

Magnetocaloric effects and magnetic properties in intermetal...

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International Conference on Magnetics (INTErMAG)

作者： A.T. Saito H. Tsuji T. Kobayashi Environmental Technology Laboratory Corporate Research and Development Center Toshiba Corporation Kawasaki Japan Corporate R&D Center Environmental Technology Laboratory Saiwai-ku Japan

The effect of Co substitution on magnetocaloric effects and magnetic properties of La(Fe/sub 1-x-y/Co/sub x/Si/sub y/)/sub 13/ was described. X-ray diffraction and magnetization measurements were performed on the sample. The samples exhibited itinerant-electron metamagnetic and ferromagnetic nature when x = 0.035, 0.065 and x = 0.05, 0.07 respectively. Co substitution gave rise to varying intrinsic change of magnetic entropy.

关键词： Magnetic properties Intermetallic Sun Superconducting magnets Entropy refrigeration Temperature dependence Superconducting transition temperature Magnetization Magnetic field measurement

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Quality assured mass productive 1.6V operational 0.18 /spl mu/m 1T1C FrAM embedded smart card with advanced integration technologies against defectives

Quality assured mass productive 1.6V operational 0.18 /spl m...

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International Electron devices Meeting (IEdM)

作者： J.-H. Kim Y.M. Kang J.H. Park H.J. Joo S.K. Kang d.Y. Choi H.S. rhie B.J. Koo S.Y. Lee H.S. Jeong Kinam Kim Technology Development 2 Team Semiconductor R&D CenterMemory Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea

We have made great progress for mass production of a highly reliable 1.6V, 0.18 mum 1T1C FrAM embedded smart card. For mass production, our device has to pass standard qualification tests on the package level. These contain the infant life test (ILT), the high temperature operating life (HTOL), the endurance and the high temperature storage (HTS) test. Problems in the PZT capacitor integration scheme led to single bit fails during the standard ILT, HTOL and HTS tests. The causes are broken EBL and TE/PZT interface damage, which were removed by the modification of top electrode deposition and capacitor etching processes and by a new capping oxide deposition scheme

关键词： random access memory Ferroelectric films Nonvolatile memory Smart cards Mass production Life testing High temperature superconductors Capacitors Qualifications Packaging

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Single stress liner for both NMOS and PMOS current enhancement by a novel ultimate spacer process

Single stress liner for both NMOS and PMOS current enhanceme...

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International Electron devices Meeting (IEdM)

作者： Y.C. Liu J.W. Pan T.Y. Chang P.W. Liu B.C. Lan C.H. Tung C.H. Tsai T.F. Chen C.J. Lee W.M. Wang Y.A. Chen H.L. Shih L.Y. Tung L.W. Cheng T.M. Shen S.C. Chiang M.F. Lu W.T. Chang Y.H. Luo d. Nayak d. Gitlin H.L. Meng C.T. Tsai Central R&D Exploratory Technologies Division United Microelectronics Corporation Limited Taiwan Foundry Group CMOS Technology Development Xilinx Inc. San Jose CA USA

For the first time, 75% and 7% drive current improvement is simultaneously achieved in both N/PMOS by adopting ultimate spacer process (USP) with a single stress liner. High out-of-plane stress in the channel accounts for the simultaneously enhanced drive current in N/PMOS. A 15% speed enhancement without compromising yield and product qualification in field-programmable gate arrays (FPGA) confirms immediate manufacturing feasibility of USP. This process provides a unique approach to significantly enhance device performance for 65nm CMOS technology and beyond. Extreme current increase of 25% in NMOS and 35% in PMOS can be achieved by applying additional strain enhancement methods

关键词： MOS devices Tensile stress CMOS process CMOS technology Capacitive sensors Performance gain Space technology Qualifications Field programmable gate arrays Microelectronics

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S-rCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm drAM feature size and beyond

S-RCAT (sphere-shaped-recess-channel-array transistor) techn...

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Symposium on VLSI technology

作者： J.V. Kim H.J. Oh d.S. Woo Y.S. Lee d.H. Kim S.E. Kim G.W. Ha H.J. Kim N.J. Kang J.M. Park Y.S. Hwang d.I. Kim B.J. Park M. Huh B.H. Lee S.B. Kim M.H. Cho M.Y. Jung Y.I. Kim C. Jin d.W. Shin M.S. Shim C.S. Lee W.S. Lee J.C. Park G.Y. Jin Y.J. Park Kinam Kim Samsung Electronics Co. Yongin-City Kyunggi-Do KOREA Advanced Technology Development Semiconductor Research and Development Division CAE Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Semiconductor R&D Division CAE Advanced Technology Development Semiconductor Research and Development Division Process Technology Team Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Technology Team

For the first time, S-rCAT (sphere-shaped-recess-channel-array transistor) technology has been successfully developed in a 2Gb density drAM with 70nm feature size. It is a modified structure of the rCAT (recess-channel-array transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-rCAT demonstrated superior characteristics in dIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the rCAT structure, in this paper, S-rCAT is proved to be the most promising drAM array transistor suitable for sub-50nm and mobile applications.

关键词： random access memory Paper technology Transistors Neck research and development Computer aided engineering Very large scale integration

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Effective dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors

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MrS Online Proceedings Library 2005年第1期871卷 1-6页

作者： Shinichi Kawamura Manabu Yoshida Satoshi Hoshino Toshihide Kamata R&D Center RICOH 16-1 Shinei-cho Tsuzuki-ku Yokohama Japan Optoelectronic Industry and Technology Development Association (OITDA) Sekiguchi Bunkyo-ku Tokyo Japan National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi Tsukuba Ibaraki Japan

The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.

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