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IEEE Conference on Vehicular technology (VTC)

作者： M. Ghoraishi J.-i. Takada T. Imai Department of International Development Engineering Tokyo Institute of Technology Tokyo Japan R&D Center NTT DoCoMo Inc. Kanagawa Japan

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Magnetocaloric effects and magnetic properties in intermetallic compounds La(Fe/sub 1-x-y/Co/sub x/Si/sub y/)/sub 13/

Magnetocaloric effects and magnetic properties in intermetal...

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International Conference on Magnetics (INTErMAG)

作者： A.T. Saito H. Tsuji T. Kobayashi Environmental Technology Laboratory Corporate Research and Development Center Toshiba Corporation Kawasaki Japan Corporate R&D Center Environmental Technology Laboratory Saiwai-ku Japan

The effect of Co substitution on magnetocaloric effects and magnetic properties of La(Fe/sub 1-x-y/Co/sub x/Si/sub y/)/sub 13/ was described. X-ray diffraction and magnetization measurements were performed on the sample. The samples exhibited itinerant-electron metamagnetic and ferromagnetic nature when x = 0.035, 0.065 and x = 0.05, 0.07 respectively. Co substitution gave rise to varying intrinsic change of magnetic entropy.

关键词： Magnetic properties Intermetallic Sun Superconducting magnets Entropy refrigeration Temperature dependence Superconducting transition temperature Magnetization Magnetic field measurement

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Quality assured mass productive 1.6V operational 0.18 /spl mu/m 1T1C FrAM embedded smart card with advanced integration technologies against defectives

Quality assured mass productive 1.6V operational 0.18 /spl m...

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International Electron devices Meeting (IEdM)

作者： J.-H. Kim Y.M. Kang J.H. Park H.J. Joo S.K. Kang d.Y. Choi H.S. rhie B.J. Koo S.Y. Lee H.S. Jeong Kinam Kim Technology Development 2 Team Semiconductor R&D CenterMemory Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea

We have made great progress for mass production of a highly reliable 1.6V, 0.18 mum 1T1C FrAM embedded smart card. For mass production, our device has to pass standard qualification tests on the package level. These contain the infant life test (ILT), the high temperature operating life (HTOL), the endurance and the high temperature storage (HTS) test. Problems in the PZT capacitor integration scheme led to single bit fails during the standard ILT, HTOL and HTS tests. The causes are broken EBL and TE/PZT interface damage, which were removed by the modification of top electrode deposition and capacitor etching processes and by a new capping oxide deposition scheme

关键词： random access memory Ferroelectric films Nonvolatile memory Smart cards Mass production Life testing High temperature superconductors Capacitors Qualifications Packaging

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Single stress liner for both NMOS and PMOS current enhancement by a novel ultimate spacer process

Single stress liner for both NMOS and PMOS current enhanceme...

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International Electron devices Meeting (IEdM)

作者： Y.C. Liu J.W. Pan T.Y. Chang P.W. Liu B.C. Lan C.H. Tung C.H. Tsai T.F. Chen C.J. Lee W.M. Wang Y.A. Chen H.L. Shih L.Y. Tung L.W. Cheng T.M. Shen S.C. Chiang M.F. Lu W.T. Chang Y.H. Luo d. Nayak d. Gitlin H.L. Meng C.T. Tsai Central R&D Exploratory Technologies Division United Microelectronics Corporation Limited Taiwan Foundry Group CMOS Technology Development Xilinx Inc. San Jose CA USA

For the first time, 75% and 7% drive current improvement is simultaneously achieved in both N/PMOS by adopting ultimate spacer process (USP) with a single stress liner. High out-of-plane stress in the channel accounts for the simultaneously enhanced drive current in N/PMOS. A 15% speed enhancement without compromising yield and product qualification in field-programmable gate arrays (FPGA) confirms immediate manufacturing feasibility of USP. This process provides a unique approach to significantly enhance device performance for 65nm CMOS technology and beyond. Extreme current increase of 25% in NMOS and 35% in PMOS can be achieved by applying additional strain enhancement methods

关键词： MOS devices Tensile stress CMOS process CMOS technology Capacitive sensors Performance gain Space technology Qualifications Field programmable gate arrays Microelectronics

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S-rCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm drAM feature size and beyond

S-RCAT (sphere-shaped-recess-channel-array transistor) techn...

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Symposium on VLSI technology

作者： J.V. Kim H.J. Oh d.S. Woo Y.S. Lee d.H. Kim S.E. Kim G.W. Ha H.J. Kim N.J. Kang J.M. Park Y.S. Hwang d.I. Kim B.J. Park M. Huh B.H. Lee S.B. Kim M.H. Cho M.Y. Jung Y.I. Kim C. Jin d.W. Shin M.S. Shim C.S. Lee W.S. Lee J.C. Park G.Y. Jin Y.J. Park Kinam Kim Samsung Electronics Co. Yongin-City Kyunggi-Do KOREA Advanced Technology Development Semiconductor Research and Development Division CAE Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Semiconductor R&D Division CAE Advanced Technology Development Semiconductor Research and Development Division Process Technology Team Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Technology Team

For the first time, S-rCAT (sphere-shaped-recess-channel-array transistor) technology has been successfully developed in a 2Gb density drAM with 70nm feature size. It is a modified structure of the rCAT (recess-channel-array transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-rCAT demonstrated superior characteristics in dIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the rCAT structure, in this paper, S-rCAT is proved to be the most promising drAM array transistor suitable for sub-50nm and mobile applications.

关键词： random access memory Paper technology Transistors Neck research and development Computer aided engineering Very large scale integration

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Effective dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors

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MrS Online Proceedings Library 2005年第1期871卷 1-6页

作者： Shinichi Kawamura Manabu Yoshida Satoshi Hoshino Toshihide Kamata R&D Center RICOH 16-1 Shinei-cho Tsuzuki-ku Yokohama Japan Optoelectronic Industry and Technology Development Association (OITDA) Sekiguchi Bunkyo-ku Tokyo Japan National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi Tsukuba Ibaraki Japan

The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.

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High Power ridge GaInP/AIGaInP Laser diodes for dVd-r/rW

High Power Ridge GaInP/AIGaInP Laser Diodes for DVD-R/RW

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Pacific rim Conference on Lasers and Electro-Optics (CLEO/Pacific rim)

作者： Byungjin Ma Soohaeng Cho Joonseok Kang Sangbum Lee Changyun Lee Youngchul Shin Youngmin Kim Yongjo Park Samsung Electro-Mechanics Central R&D institute Korea Photonics program team Samsung Advanced Institute of Technology Korea Central Research & Development Institute Samsung Electro Mechanics Company Limited South Korea

We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laser diodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two... 详细信息

关键词： diode lasers Optical devices Optical buffering dry etching Optical recording Optical refraction Optical variables control Wet etching Laser beams Plasma temperature

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A micromachined thermal flow sensor applied to a PC mouse device

A micromachined thermal flow sensor applied to a PC mouse de...

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IEEE SENSOrS

作者： S. Sasaki T. Fujiwara S. Nozoe F. Sato K. Imanaka S. Sugiyama Corporate R&D HQ Omron Corp. Kyoto Japan Semiconductor Division HQ Kyoto Japan Corporate Research and Development HQ Kyoto Japan Department of Microsystem Technology Ritsumeikan University Shiga Japan

This paper reports on a new PC mouse device by the use of the micromachined thermal flow sensors. The proposed mouse contains two small flow sensors mounted in two 10-mm-diameter and 3-mm-depth spaces in order to measure its velocity and direction. When the mouse is moved in a direction, air flow is generated because the air tends to stay where it is. Our sensors can detect the wide range flow speed which enables the mouse speed ranging from hundreds to one mm/s. A ball-type mouse is as big as one's palm because the mouse needs sufficient weight of a rubber ball to provide friction force. An optical mouse is smaller but it needs a patterned indented surface and sufficient light reflection from the surface of the desktop. The present flow mouse is as small as an optical one and it can work even on a smooth transparent glass. The results indicate that displacement can be measured with in an error ratio +/$2% at 10, 50,100 and 150 mm/s. This error ratio is good enough for this application

关键词： Thermal sensors Mice Optical sensors Extraterrestrial measurements Fluid flow measurement Velocity measurement rubber Friction Force sensors Optical reflection

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In-field evaluation of a managed IP/MPLS over WdM provisioning solution

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IEEE COMMUNICATIONS MAGAZINE 2005年第11期43卷 S26-S33页

作者： Karayannis, F Serrat-Fernández, J Baliosian, J rubio-Loyola, J Vaxevanakis, KG Pagomenos, G Zahariadis, TB raptis, L Ellinas, M Chatzilias, G Chronis, dL Katopodis, HA doukoglou, T Androulidakis, S Galis, OA Vardalachos, N Tsanakas, P Kalogeras, d Infrastructure Planning and Development Manager Greek Research and Technology Network (GRNET). Consultant CERN IT division in the area of grid computing policies. Associate Professor UPC. Senior Member of Technical Staff Ellemedia Technologies. Telecommunication Engineer Ellemedia Technologies. Technical Director of Ellemedia Technologies. Research Associate Telecommunications Laboratory of NTUA. Lecturer Informatics Department University of Piraeus. Head of the National NMC Operations Coordination Section of OTE SA. Head of the Broadband Access and Optical Core Technologies Laboratory of OTE''s R&D Department. Visiting Professor University College London. University College London. Professor School of Electrical and Computer Engineering of NTUA. Director of the Institute for Research Networking and Technologie. Chairman of GRNET. Design and Development NTUA. Design and Development GRNET Data Networks. Member of the Technical and Scientific Committee of the Greek School Network. Member of TEE

This article demonstrates results and experiences gained in the area of multilayer internetworking, with emphasis on bandwidth on-demand provisioning as well as resource and restoration management. Behavioral characteristics and numerical results were obtained from a management system prototype implemented and tested in an appropriately adapted commercial WdM environment enhanced with multivendor gigabit IP routers. The management solution, the testbed environment, and a representative evaluation scenario are presented as a means of explaining in detail the results that finally allow a global system assessment.

关键词： Computer networks digital communications Internet protocols Computer programming routers (Computer networks) Computer network resources

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Optimization of the plasma sputtering deposition processing by computational fluid dynamics

Optimization of the plasma sputtering deposition processing ...

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International Conference on Mechatronics (ICM)

作者： Sung-Wei Yang T.C.-K. Yang Chien-Lung Hung Chun-Kuei Fu Jui-Ming Hua J.H.-H. Hung Department of Chemical Engineering National Taipei University of Technology Taipei Taiwan Automation R&D Department Metal Industries Research and Development Center Kaohsiung Taiwan Department of Chemical and Materials Engineering University of Auckland New Zealand

The uniformity of the deposited film in the sputtering process is a key issue that determines the quality of the device and the fabrication yield. Geometric parameters as well as operating conditions are considered as two major categories that are responsible for the film uniformity. The parameters of reactor geometries in the first category include the dimensions and size of the reactor, the distance between target and substrate, and locations for the inlet gas and exhaust gas. The second category, (operating conditions), includes the factors such as gas flow rate, operating pressure, types of energy provided, quantities of energy given. Therefore, it is a tedious and costly procedure to fine-tune these variables to achieve the optimal film uniformity. In this study, the usage of CFd (computational fluid dynamics) techniques accompanied with the dOE (design of experiment) and ANN (artificial neural network, back propagation feed-forward neural net) methods is implemented to help locate the best parameters for plasma sputtering deposition process. In conclusion, the most significant factor that affects the film uniformity and deposition rate is voltage of the target; the second most significant factor is operation pressure, while the flow rate of input gas has the least effect. With respect to the effect of target voltage, it is found that this variable has a much greater influence on the deposition rate than its effect to the film uniformity.

关键词： Plasma materials processing Sputtering Computational fluid dynamics Artificial neural networks Inductors Voltage Plasma devices Fabrication Geometry Substrates

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