检索结果-内蒙古大学图书馆

2004 7th International Conference on Solid-State and Integrated Circuits technology（ICSICT 2004）

作者： Eun-Jung Yoon Chang-Woo Oh Sung-Young Lee Sung-Min Kim Kyeong-Hwan Yeo Min-Sang Kim Sung-Hwan Kim dong-Uk Choi Jeong-dong Choe dong-Won Kim donggun Park Kinam Kim Device Research Team R&D CenterSamsung Electronics Co.LTD. Advanced Technology Development Team R&D CenterSamsung Electronics Co.LTD.

In this paper,the hot carrier reliability of double-gate (dG) MOSFETs is evaluated by *** effect of floating body and volume inversion on hot carrier injection in dG is *** proves that thin body dG has good immunity to hot carrier injection into the gate *** for the application of dG in nonvolatile memory,an effective method is suggested to control the hot carrier injection in dG.

关键词： Hot Carrier Issues in Thin Body double-Gate MOSFET

来源：评论

学校读者我要写书评

暂无评论

Screen printed carbon nanotube field emitter array for lighting source application

Screen printed carbon nanotube field emitter array for light...

引用

International Conference on Vacuum Nanoelectronics (IVNC)

作者： Jae-Hong Park Jin-San Moon Jae-Hee Han A.S. Berdinsky Ji-Beom Yoo Joong-Woo Nam Jonghwan Park C.G. Lee d.H. Choi Byeong Kyoo Shon Hak Jun Chung Sang Jik Kwon Center for Nanotubes and Nanostructured Composites Sungkyunkwan University Suwon Korea Technology Development 3 Corperate R&D Center Kiheung South Korea Technology Development 3 Corperate R&D Center Yongin Korea Department of Electronics Engineering Kyungwon University Seongnam Kyunggi-Do Korea

Photosensitive carbon nanotube (CNT) paste was synthesized with spin on glass (SOG) as inorganic binder. The field emission characteristics of this CNT paste was studied. CNT field emitter arrays (FEAs) was then fabricated using screen-printing method, photolithography and vacuum-in-line sealing technology. It is concluded that the diode type FEA using CNT paste with SOG can be used for lighting system applications such as the back light unit in TFT-LCd.

关键词： Carbon nanotubes Field emitter arrays Optical arrays diodes Electron tubes Glass Vehicles Microstructure Vacuum technology Brightness

来源：评论

学校读者我要写书评

暂无评论

A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance

A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with ...

引用

Symposium on VLSI technology

作者： Sung-Young Lee Eun-Jung Yoon Sung-Min Kim Chang Woo Oh Ming Li Jeong-dong Choi Kyoung-Hwan Yeo Min-Sang Kim Hye-Jin Cho Sung-Hwan Kim dong-Won Kim donggun Park Kinam Kim Advanced Technology Development Team R&D Center Samsung Electronics Co. Yongin-City Kyungki-Do KOREA

ISBN: (纸本)0780382897

We demonstrate highly manufacturable sub-50 nm MBCFET with the I/sub on/ of 4.26 mA/ /spl mu/m at V/sub dd/ = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted from the vertically stacked channels and enhanced mobility. It has been fabricated on bulk Si substrate by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and damascene gate process. It has structural and electrical merits in scaling and process integration.

关键词： MOSFET circuits Substrates Bridge circuits Fabrication Etching Silicon compounds Epitaxial growth Manufacturing processes Silicon on insulator technology Silicon germanium

来源：评论

学校读者我要写书评

暂无评论

Transistor test structures for leakage current analysis of partial SOI

Transistor test structures for leakage current analysis of p...

引用

IEEE International Conference on Microelectronic Test Structures

作者： Kyoung Hwan Yeo Chang Woo Oh Sung-Min Kim Min-Sang Kim Sung-Young Lee Ming Li Hye-Jin Cho Eun-Jung Yoon Sung-Hwan Kim Jeong-dong Choe dong-Won Kim donggun Park Kinam Kim Advanced Technology Development Team R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

ISBN: (纸本)0780382625

A new test structure to directly measure the junction leakage current between the channel and source/drain region is developed with partially-insulated structure. Si/SiGe epitaxial growth and selective SiGe etch process are used to form PiOX (Partially-Insulating OXide) under source and drain. With this structure, the junction leakage current between source/drain and substrate is diminished and the leakage current component from channel region and source/drain is easily measured.

关键词： Leakage current Substrates Current measurement Insulation Silicon germanium Germanium silicon alloys Etching Electronic equipment testing Epitaxial growth MOSFET circuits

来源：评论

学校读者我要写书评

暂无评论

Prospects of emerging new memory technologies

Prospects of emerging new memory technologies

引用

IEEE International Conference on Integrated Circuit design and technology (ICICdT)

作者： S.Y. Lee K. Kim Advanced Technology Development Semiconductor R&D Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric rAM, Phase change rAM, and Magnetic rAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.

关键词： random access memory Ferroelectric films Nonvolatile memory Ferroelectric materials Phase change random access memory MIM capacitors dielectrics material storage Plugs Electrodes

来源：评论

学校读者我要写书评

暂无评论

development of ultrasonic flip chip bonding for flexible printed circuit

Development of ultrasonic flip chip bonding for flexible pri...

引用

International Symposium on High density Packaging and Microsystem Integration (HdP)

作者： H. Maruo Y. Seki Y. Unami Circuit Technology Research and Development Department Fujitsu Laboratories Limited Sakura Chiba Japan Circuit Technology R&D Department Fujikura Ltd. Chiba JAPAN

Small form factor and high density printed circuit boards (PCB) have been already realized by flip chip (FC) bonding technology. However, the requirement for finer pitch PCB is still increasing with shrinkage of die and wiring. Therefore, conventional flip chip bonding technology will not provide sufficient capability or productivity to meet future demands. The authors have focused on flip chip bonding method utilizing ultrasonic vibration. Flip chip modules using flexible printed circuit (FPC) are strongly required for such as mobile phone applications. For that purpose, we have investigated to assemble semiconductor devices with FPCs applying this method, particularly for large size die with multiple pads. In this report, we have evaluated relationship between bonding parameters and reliability using several kinds of copper clad laminate (CCL) with different plating conditions. We show the correlation between formation of microscopic metallic bond and actual chip on flex (COF) module performance. As a result, we succeed to realize 35/spl mu/m pad pitch COF module.

关键词： Flip chip Bonding Flexible printed circuits Wiring Productivity Mobile handsets Assembly Semiconductor devices Copper Laminates

来源：评论

学校读者我要写书评

暂无评论

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm drAMs

A mechanically enhanced storage node for virtually unlimited...

引用

International Electron devices Meeting (IEdM)

作者： d.H. Kim J.Y. Kim M. Huh Y.S. Hwang J.M. Park d.H. Han d.I. Kim M.H. Cho B.H. Lee H.K. Hwang J.W. Song N.J. Kang G.W. Ha S.S. Song M.S. Shim S.E. Kim J.M. Kwon B.J. Park H.J. Oh H.J. Kim d.S. Woo M.Y. Jeong Y.I. Kim Y.S. Lee J.C. Shin J.W. Seo S.S. Jeong K.H. Yoon T.H. Ahn J.B. Lee Y.W. Hyung S.J. Park H.S. Kim W.T. Choi G.Y. Jin Y.G. Park Kinam Kim Advanced Technology Development Team Process Technology Team Semiconductor R&D Div Samsung Electronics Co Kiheung-Eup Yongin-City Kyunggi-Do Korea

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si/sub 3/N/sub 4/, has been successfully developed on 80nm COB drAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) drAMs.

关键词： Capacitors random access memory Tin Capacitance dielectric materials Bridge circuits Glass Strips Manufacturing processes Semiconductor device manufacture

来源：评论

学校读者我要写书评

暂无评论

A Highly Manufacturadle Low-k ALd-SiBN Process for 60nm NANd Flash devices and Beyond

A Highly Manufacturadle Low-k ALD-SiBN Process for 60nm NAND...

引用

IEEE International Electron devices Meeting, 2004 IEdM

作者： Kim, Jin-Gyun Ahn, Jae-Young Kim, Hong-Suk Lim, Ju-Wan Kim, Chae-Ho Shu, Hoka Hasebe, Kazuhide Hur, Sung-Hoi Park, Jong-Ho Kim, Hee-Seok Shin, Yu-Gyun Chung, U-In Moon, Joo-Tae Process Development Team Technology Development Team Semiconductor R&D Center Samsung Electronics Co. LTD Gyeonggi-Do Yongin-City449-711 Korea Republic of Process Engineering Section Thermal Processing Systems BU Tokyo Electron Ltd. 650 Mitsuzawa Hosaka-cho Yamanashi Nirasaki407-0192 Japan

For the first time, low-k dielectric ALd-SiBN (Atomic Layer deposition) is successfully developed and applied on poly-Si/WSix gate as a spacer for reduction of parasitic capacitance between the cells. ALd-SiBN deposition is performed at 630°C using dichlorosilane (SiH2Cl2-dCS), boron-trichloride (BCl3) and ammonia (NH3) as precursors. Compared with the conventional silicon nitride, ALd-SiBN exhibits similar film properties at lower dielectric constant. ALd-SiBN layer is deposited on poly-Si/WSix stack gate in 90nm NANd flash device. A significant reduction (>15%) of the floating-gate coupling voltage is achieved by employing SiBN compared with SiN spacer. In addition, excellent data retention characteristics (@HTS) is identified by applying lowk dielectric SiBN layer as a spacer on 90nm NANd flash device. © 2004 IEEE.

关键词： Chlorine compounds

来源：评论

学校读者我要写书评

暂无评论

differentiation between short and long TCP flows: predictability of the response time

Differentiation between short and long TCP flows: predictabi...

引用

IEEE Annual Joint Conference: INFOCOM, IEEE Computer and Communications Societies

作者： K. Avrachenkovt U. Ayesta P. Brown E. Nyberg INRIA France France Telecom Research and Development Center France France Telecom R&D INRIA Sophia Antipolis France Helsinki University of Technology Finland

Internet measurements show that a small number of large TCP flows are responsible for the largest amount of data transferred, whereas most of the TCP sessions are made up of few packets. Several authors have invoked this property to suggest the use of scheduling algorithms, which favor short jobs, such as LAS (least attained service), to differentiate between short and long TCP flows. We propose a packet level stateless, threshold based scheduling mechanism for TCP flows, ruN2C. We describe an implementation of this mechanism, which has the advantage of being TCP compatible and progressively deployable. We compare the behavior of ruN2C with LAS based mechanisms through analytical models and simulations. As an analytical model, we use a two level priority processor sharing PS + PS. In the PS + PS system, a connection is classified as high or low priority depending on the amount of service it has obtained. We show that PS + PS reduces the mean response time in comparison with standard processor sharing when the hazard rate of the file size distribution is decreasing. By simulations we study the impact of ruN2C on extreme values of response times and the mean number of connections in the system. Both simulations and analytical results show that ruN2C has a very beneficial effect on the delay of short flows, while treating large flows as the current TCP implementation does. In contrast, we find that LAS based mechanisms can lead to pathological behavior in extreme cases.

关键词： delay TCPIP Queueing analysis Hazards Ergonomics Telecommunications research and development Internet Mechanical factors Scheduling algorithm

来源：评论

学校读者我要写书评

暂无评论

development of Straight Style Transfer Equipment for Lower Limbs disabled: Verification of Basic Motion

引用

Journal of robotics and Mechatronics 2004年第5期16卷 456-463页

作者： Mori, Yoshikazu Takayama, Kazuhiro Zengo, Takeshi Nakamura, Tatsuya Graduate School of Engineering Tokyo Metropolitan University 1-1 Minami-Osawa Tokyo Hachioji192-0397 Japan Engineering Development Department B6 Honda R&D Co. Ltd. Tochigi R&D Center 4630 Shimotakanezawa Haga-machi Haga-gun Tochigi321-3393 Japan IJ Technology Development Center Technology & Development Group Fuji Xerox Co. Ltd. 2274 Hongo Kanagawa Ebina-shi243-0494 Japan

We developed straight style transfer equipment for a person with disabled legs. It realizes travel in a standing state even on uneven ground, standing-up motion from a seated position, and ascending stairs. This equipment comprises three modules: a pair of telescopic crutches, a powered lower extremity orthosis, and a pair of mobile platforms. We detail the conceptual design of the equipment and the motion of each module. Cooperative operations using three modules are discussed through simulations. We verified travel in a standing state, including rotation, and standing-up motion from a chair through experiments using prototypes of telescopic crutches and mobile platforms. © 2004, Fuji technology Press. All rights reserved.

关键词： Conceptual design

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：