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IEEE International Conference on Integrated Circuit design and technology (ICICdT)

作者： S.Y. Lee K. Kim Advanced Technology Development Semiconductor R&D Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric rAM, Phase change rAM, and Magnetic rAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.

关键词： random access memory Ferroelectric films Nonvolatile memory Ferroelectric materials Phase change random access memory MIM capacitors dielectrics material storage Plugs Electrodes

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development of ultrasonic flip chip bonding for flexible printed circuit

Development of ultrasonic flip chip bonding for flexible pri...

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International Symposium on High density Packaging and Microsystem Integration (HdP)

作者： H. Maruo Y. Seki Y. Unami Circuit Technology Research and Development Department Fujitsu Laboratories Limited Sakura Chiba Japan Circuit Technology R&D Department Fujikura Ltd. Chiba JAPAN

Small form factor and high density printed circuit boards (PCB) have been already realized by flip chip (FC) bonding technology. However, the requirement for finer pitch PCB is still increasing with shrinkage of die and wiring. Therefore, conventional flip chip bonding technology will not provide sufficient capability or productivity to meet future demands. The authors have focused on flip chip bonding method utilizing ultrasonic vibration. Flip chip modules using flexible printed circuit (FPC) are strongly required for such as mobile phone applications. For that purpose, we have investigated to assemble semiconductor devices with FPCs applying this method, particularly for large size die with multiple pads. In this report, we have evaluated relationship between bonding parameters and reliability using several kinds of copper clad laminate (CCL) with different plating conditions. We show the correlation between formation of microscopic metallic bond and actual chip on flex (COF) module performance. As a result, we succeed to realize 35/spl mu/m pad pitch COF module.

关键词： Flip chip Bonding Flexible printed circuits Wiring Productivity Mobile handsets Assembly Semiconductor devices Copper Laminates

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A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm drAMs

A mechanically enhanced storage node for virtually unlimited...

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International Electron devices Meeting (IEdM)

作者： d.H. Kim J.Y. Kim M. Huh Y.S. Hwang J.M. Park d.H. Han d.I. Kim M.H. Cho B.H. Lee H.K. Hwang J.W. Song N.J. Kang G.W. Ha S.S. Song M.S. Shim S.E. Kim J.M. Kwon B.J. Park H.J. Oh H.J. Kim d.S. Woo M.Y. Jeong Y.I. Kim Y.S. Lee J.C. Shin J.W. Seo S.S. Jeong K.H. Yoon T.H. Ahn J.B. Lee Y.W. Hyung S.J. Park H.S. Kim W.T. Choi G.Y. Jin Y.G. Park Kinam Kim Advanced Technology Development Team Process Technology Team Semiconductor R&D Div Samsung Electronics Co Kiheung-Eup Yongin-City Kyunggi-Do Korea

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si/sub 3/N/sub 4/, has been successfully developed on 80nm COB drAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) drAMs.

关键词： Capacitors random access memory Tin Capacitance dielectric materials Bridge circuits Glass Strips Manufacturing processes Semiconductor device manufacture

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A Highly Manufacturadle Low-k ALd-SiBN Process for 60nm NANd Flash devices and Beyond

A Highly Manufacturadle Low-k ALD-SiBN Process for 60nm NAND...

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IEEE International Electron devices Meeting, 2004 IEdM

作者： Kim, Jin-Gyun Ahn, Jae-Young Kim, Hong-Suk Lim, Ju-Wan Kim, Chae-Ho Shu, Hoka Hasebe, Kazuhide Hur, Sung-Hoi Park, Jong-Ho Kim, Hee-Seok Shin, Yu-Gyun Chung, U-In Moon, Joo-Tae Process Development Team Technology Development Team Semiconductor R&D Center Samsung Electronics Co. LTD Gyeonggi-Do Yongin-City449-711 Korea Republic of Process Engineering Section Thermal Processing Systems BU Tokyo Electron Ltd. 650 Mitsuzawa Hosaka-cho Yamanashi Nirasaki407-0192 Japan

For the first time, low-k dielectric ALd-SiBN (Atomic Layer deposition) is successfully developed and applied on poly-Si/WSix gate as a spacer for reduction of parasitic capacitance between the cells. ALd-SiBN deposition is performed at 630°C using dichlorosilane (SiH2Cl2-dCS), boron-trichloride (BCl3) and ammonia (NH3) as precursors. Compared with the conventional silicon nitride, ALd-SiBN exhibits similar film properties at lower dielectric constant. ALd-SiBN layer is deposited on poly-Si/WSix stack gate in 90nm NANd flash device. A significant reduction (>15%) of the floating-gate coupling voltage is achieved by employing SiBN compared with SiN spacer. In addition, excellent data retention characteristics (@HTS) is identified by applying lowk dielectric SiBN layer as a spacer on 90nm NANd flash device. © 2004 IEEE.

关键词： Chlorine compounds

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differentiation between short and long TCP flows: predictability of the response time

Differentiation between short and long TCP flows: predictabi...

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IEEE Annual Joint Conference: INFOCOM, IEEE Computer and Communications Societies

作者： K. Avrachenkovt U. Ayesta P. Brown E. Nyberg INRIA France France Telecom Research and Development Center France France Telecom R&D INRIA Sophia Antipolis France Helsinki University of Technology Finland

Internet measurements show that a small number of large TCP flows are responsible for the largest amount of data transferred, whereas most of the TCP sessions are made up of few packets. Several authors have invoked this property to suggest the use of scheduling algorithms, which favor short jobs, such as LAS (least attained service), to differentiate between short and long TCP flows. We propose a packet level stateless, threshold based scheduling mechanism for TCP flows, ruN2C. We describe an implementation of this mechanism, which has the advantage of being TCP compatible and progressively deployable. We compare the behavior of ruN2C with LAS based mechanisms through analytical models and simulations. As an analytical model, we use a two level priority processor sharing PS + PS. In the PS + PS system, a connection is classified as high or low priority depending on the amount of service it has obtained. We show that PS + PS reduces the mean response time in comparison with standard processor sharing when the hazard rate of the file size distribution is decreasing. By simulations we study the impact of ruN2C on extreme values of response times and the mean number of connections in the system. Both simulations and analytical results show that ruN2C has a very beneficial effect on the delay of short flows, while treating large flows as the current TCP implementation does. In contrast, we find that LAS based mechanisms can lead to pathological behavior in extreme cases.

关键词： delay TCPIP Queueing analysis Hazards Ergonomics Telecommunications research and development Internet Mechanical factors Scheduling algorithm

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development of Straight Style Transfer Equipment for Lower Limbs disabled: Verification of Basic Motion

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Journal of robotics and Mechatronics 2004年第5期16卷 456-463页

作者： Mori, Yoshikazu Takayama, Kazuhiro Zengo, Takeshi Nakamura, Tatsuya Graduate School of Engineering Tokyo Metropolitan University 1-1 Minami-Osawa Tokyo Hachioji192-0397 Japan Engineering Development Department B6 Honda R&D Co. Ltd. Tochigi R&D Center 4630 Shimotakanezawa Haga-machi Haga-gun Tochigi321-3393 Japan IJ Technology Development Center Technology & Development Group Fuji Xerox Co. Ltd. 2274 Hongo Kanagawa Ebina-shi243-0494 Japan

We developed straight style transfer equipment for a person with disabled legs. It realizes travel in a standing state even on uneven ground, standing-up motion from a seated position, and ascending stairs. This equipment comprises three modules: a pair of telescopic crutches, a powered lower extremity orthosis, and a pair of mobile platforms. We detail the conceptual design of the equipment and the motion of each module. Cooperative operations using three modules are discussed through simulations. We verified travel in a standing state, including rotation, and standing-up motion from a chair through experiments using prototypes of telescopic crutches and mobile platforms. © 2004, Fuji technology Press. All rights reserved.

关键词： Conceptual design

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dSrC local communication platform and its application to information push service

DSRC local communication platform and its application to inf...

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IEEE Symposium on Intelligent Vehicle

作者： M. Ikawa Y. Goto Y. Igarashi H. Kumazawa K. Koizumi K. Oka Advanced Technology Research and Development Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan Advanced Technology R&D Center Mitsubishi Electric Corporaion Hyogo Japan Kamakura Works Mitsubishi Electric Corporaion Automotive Electronics Development Center Mitsubishi Electric Corporaion

The authors show the architecture of dSrC (dedicated short range communication) system local communication and its application to the information push service. At first, we describe the design goal, architecture and performances of Non-IP part of Application Sub-Layer(ASL), which is the multiple application platform on dSrC in Japan, as dSrC local communication platform. Next, they propose the architecture and the application protocol of the information push service on dSrC as one of the key applications of dSrC. Lastly, they report its performance measured through experiments.

关键词： Protocols Costs Buildings Access control research and development Telephony Automotive electronics Performance evaluation Communication industry Electronics industry

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Structural deformation of single-wall carbon nanotubes during field emission process

Structural deformation of single-wall carbon nanotubes durin...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： S.H. Lee J.H. Lee W.S. Kim H.J. Lee T.W. Jeong J.N. Heo J.B. Park J.M. Kim S.H. Cho T.I. Yoon M.A. Yoo J.W. Moon J.W. Nam J.H. Park J.S. Ha d.H. Choe The National Creative Research Initiatives Center for Electron Emission Source Technology Development 3 Team Corporate R&D Center Kiheung Yongin Korea Analytical Engineering LAB Lab Samsung Advanced Institute of Technology Suwon Korea

Stable electron emission from CNT emitters at required current densities is necessary to apply to the commercial devices. Generally, the current degradation during field emission has been understood as evaporation of emitter or breaking apart of tip end under intensive electrical field. In this report, we suggest one more possible mechanism that the emission current degradation may occur by increased resistance of emitters through structural deformation under field emission. The effect of current density and time on the structure of SWNT emitters was studied with TEM, low current density (100 /spl mu/A/cm/sup 2/ for 1 h) application gave no detectable structural deformation with comparison to pristine SWNTs. However, the bundles of SWNTs were deformed to amorphous structure starting at tip ends or defect sites when a high current density (500 /spl mu/m/cm/sup 2/ for more than 1h) was applied. It supports that the deformation of SWNT results from heat during emission at emitters. It is understood that the heat during emission could give a rise to destruct the crystalline structure and reconstruct the carbon bonding in SWNTs bundles. We also understood that the increase of the turn-on voltage is attributed to the increase of electrical resistance of emitters raising from structural deformation during emission process.

关键词： Carbon nanotubes Current density degradation Electric resistance Electron emission Amorphous materials Crystallization Carbon dioxide Bonding Voltage

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EFFECTS OF MOdIFICATION OF THE CArBIdE CHArACTErISTICS THrOUGH GrAIN BOUNdArY SErrATION ON CrEEP-FATIGUE LIFE IN AUSTENITIC STAINLESS STEELS

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Acta Metallurgica Sinica(English Letters) 2004年第5期17卷 632-638页

作者： K.J.Kim H.U.Hong K.S.Min S.W.Nam Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 KoreaPosco Technical Research Laboratory #1 Koedong-dong Nam-gu Pohang 790-300 KoreaProcess Solution Development Team 1 LCD R&D Center AMLCD Division Device Solution Network Samsung Electronics Co. LTD.San 24 Nongseo-ri Giheung-eup Yongin Gyeonggi-do 449-771 KoreaDept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 Korea

Modification of the carbide characteristics through the grain boundary serration is investigated, using an AISI 316 and 304 stainless steels. In both steels, triangular carbides were observed at straight grain boundaries while planar carbides were observed at the serrated grain boundaries. The serrated grain boundary energy is observed to be much lower than that of the straight one. Therefore, the carbide morphology is found to be changed from triangular to planar along the serrated boundary to reduce the interfacial energy between the carbide and the matrix. The creep-fatigue properties of these steels at 873K have been investigated. The creep-fatigue life of the sample with planar carbide at the serrated grain boundary was found to be much longer than that with triangular carbide at the straight one. These results imply that the planar carbides with lower interfacial energy have higher cavitation resistance, resulting in the retardation of cavity nucleation and growth to increase creep-fatigue life.

关键词： cavity nucleation factor grain boundary serration carbide morphology austenitic stainless steel grain boundary cavitation

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Successful demonstration of sub-harmonic injection locking for phase shifted self-pulsating dFB lasers at 168 GHz and beyond

Successful demonstration of sub-harmonic injection locking f...

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Optical Fiber Communication (OFC) Conference

作者： M. Gotoda S. Nishikawa T. Nishimura Y. Tokuda Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Adv. Technol. R&D Center Mitsubishi Electr. Corp. Hyogo Japan Advanced Technology Research and Development Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan

We propose a new design of an ultra-high frequency pulsation laser, taking advantage of a phase shift effect. Injection locking function at 168 GHz and 210 GHz using sub-harmonic optical clock signals was experimental... 详细信息

关键词： Injection-locked oscillators Gratings Frequency reflectivity Optical pumping Optical devices Clocks Laser modes Optical reflection Phase shifters

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