New diagnostic methods of photovoltaic (PV) systems were developed only in the monthly amount of generated power without any additional measurement equipment. Moreover, the accuracy of the estimated meteorological dat...
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New diagnostic methods of photovoltaic (PV) systems were developed only in the monthly amount of generated power without any additional measurement equipment. Moreover, the accuracy of the estimated meteorological data and the diagnostic results was verified by actual PV system data. We are also developing an "evaluation service based on long-term analysis reports (E-SOLAr)" that collects the data of a site and provides diagnostic results through the Internet for PV system users. This system will provide long-term, rapid, nationwide technical services for customers.
This paper evaluates the performance of a mesh optical burst switched (OBS) network that implements tunable lasers and tunable wavelength converters to realize the optical label setting and optical label swapping func...
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This paper evaluates the performance of a mesh optical burst switched (OBS) network that implements tunable lasers and tunable wavelength converters to realize the optical label setting and optical label swapping functions. We define a realistic service evolution scenario and based on that create a realistic future traffic input scenario for the OBS network. Network simulation studies are carried out in slotted operation. The mechanisms that govern the operation of this network are revealed together with a number of design tradeoffs.
For the first time, fully working 512 Mb drAMS have been developed successfully using an 80 nm drAM technology, which is the smallest feature size in drAM technology everreported. With an ArF lithography, recess-chan...
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For the first time, fully working 512 Mb drAMS have been developed successfully using an 80 nm drAM technology, which is the smallest feature size in drAM technology everreported. With an ArF lithography, recess-channel-array-transistors (rCAT), low-temperature MIS capacitor technologies and a newly developed top spacer storage node contact (TSC), we have realized these 512 Mb drAMS. Also, we have reduced process steps, including the layerrequiring ArF lithography, by using the TSC process.
In this paper, magnetic and electrical properties of the MTJs have been investigated at each fabrication step of the full integration with carefully designed parameters of M-H and I-V properties and TMr properties of ...
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In this paper, magnetic and electrical properties of the MTJs have been investigated at each fabrication step of the full integration with carefully designed parameters of M-H and I-V properties and TMr properties of 64Kb MrAM with minimal process induceddamages have been achieved.
CNT paste was made by mixture of multi-walled carbon nanotubes (MWNT) powder, organic vehicles and inorganic binder. Then firing process was performed at different temperature under air and N/sub 2/ atmosphere. It was...
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CNT paste was made by mixture of multi-walled carbon nanotubes (MWNT) powder, organic vehicles and inorganic binder. Then firing process was performed at different temperature under air and N/sub 2/ atmosphere. It was found that emission property of CNT paste was changed by firing temperature due to remainedresin. We obtained good emission property from CNT paste treated at 350/spl deg/C.
After multi-walled carbon nanotubes (MWNT) powder was crushed with ball milling process, it was mixed with organic vehicles. And then CNT paste was printed on ITO coated glass substrate. The field emission characteris...
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After multi-walled carbon nanotubes (MWNT) powder was crushed with ball milling process, it was mixed with organic vehicles. And then CNT paste was printed on ITO coated glass substrate. The field emission characteristics of CNT pastes fired in air atmosphere was better than that of CNT paste fired in Ar ambient due to less organic residues after firing.
The smallest high density embedded 0.78 /spl mu/m/sup 2/ 6T-SrAM cell for high performance 90 nm SoC applications was successively integrated by using leading edge technologies such as 193 nm ArF lithography, 1.2 nm g...
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The smallest high density embedded 0.78 /spl mu/m/sup 2/ 6T-SrAM cell for high performance 90 nm SoC applications was successively integrated by using leading edge technologies such as 193 nm ArF lithography, 1.2 nm gate oxide, 50 nm transistor and Cu dual damascene with low-K dielectric. Fully working for SrAM shows the SNM value above 200 mV. device current of 870 /spl mu/A//spl mu/m and 390 /spl mu/A//spl mu/m for NMOS and PMOS respectively is achieved at 1.0 V operation. reliability life time on hot carrier immunity shows more than 10 years.
Sub-10-nm planar-bulk-CMOS devices were clearly demonstrated by a lateral source/drain (S/d) junction control using the precisely-controlled gate-electrode, shallow source/drain extensions (SdE) and steep halo. Good c...
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Sub-10-nm planar-bulk-CMOS devices were clearly demonstrated by a lateral source/drain (S/d) junction control using the precisely-controlled gate-electrode, shallow source/drain extensions (SdE) and steep halo. Good cut-off characteristics were observed for n/pMOSFETs with the gate length of 5 nm at 0.4 V for the first time.
The smallest embedded structures ever created by light are observed in the experiments on femtoseconddirect writing. The phenomenon is interpreted in terms of interference between light and bulk electron acoustic wav...
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