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Symposium on VLSI technology

作者： S. Inumiya K. Sekine S. Niwa A. Kaneko M. Sato T. Watanabe H. Fukui Y. Kamata M. Koyama A. Nishiyama M. Takayanagi K. Eguchi Y. Tsunashima Process and Manufacturing Engineering Center Process and Manufacturing Engineering Center Yokohama Japan SoC Research & Development Center Semiconductor Company Yokohama Japan Advanced LSI Technology Laboratory R&D Center Toshiba Corporation Isogo-ku Yokohama Japan SoC Research & Development Center Semiconductor Company

Fabrication process of HfSiON gate dielectrics by plasma oxidation of CVd Hf silicate followed by plasma nitridation was developed. Thanks to the high quality ultrathin interfacial layer formed by internal plasma oxidation, electron mobility of 240 cm/sup 2//Vs@0.8 MV/cm (85% of SiO/sub 2/) and hole mobility of 73 cm/sup 2//Vs@0.5 MV/cm (93% of SiON) were successfully achieved. The developed process will be promising for the production of low power CMOS devices in the near future.

关键词： Fabrication dielectrics Plasma applications Oxidation Hafnium Nitrogen Plasma properties Plasma materials processing Plasma stability CMOS process

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Phase-change chalcogenide nonvolatile rAM completely based on CMOS technology

Phase-change chalcogenide nonvolatile RAM completely based o...

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International Symposium on VLSI technology, Systems and Applications

作者： Y.N. Hwang J.S. Hong S.H. Lee S.J. Ahn G.T. Jeong G.H. Koh H.J. Kim W.C. Jeong S.Y. Lee J.H. Park K.C. ryoo H. Horii Y.H. Ha J.H. Yi W.Y. Cho Y.T. Kim K.H. Lee S.H. Joo S.O. Park U.I. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Semiconductor R&D Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea Process Development Samsung Electronics Company Limited Yongin si Kyunggi South Korea Process Development Samsung Electronics Co. Ltd Yongin Korea Computer Aided Engineering Teams Samsung Electronics Co. Ltd Yongin Korea

ISBN: (纸本)0780377656

We have integrated a phase-change chalcogenide random access memory, completely based on 0.24 /spl mu/m-CMOS technologies. A twin cell and BL clamping circuits are introduced to enlarge fabrication tolerance and to reduce cell perturbation during reading operation. To draw back current as much as possible, Co salicidation is also applied to transistor formation. By constructing a simple cell structure with Ge/sub 2/Sb/sub 2/Te/sub 5/, we have observed reliable phase-transitions by driving current through MOS transistors. With 100 ns-writing pulses of 2 mA for rESET and 0.6 mA for SET, the device operates successfully with a considerable sensing signal at reading voltage of as low as 0.2 V.

关键词： CMOS technology Integrated circuit technology Nonvolatile memory read-write memory random access memory Clamps Fabrication Tellurium MOSFETs Low voltage

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An in-parallel actuated manipulator with redundant actuators for gross and fine motions

An in-parallel actuated manipulator with redundant actuators...

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IEEE International Conference on robotics and Automation (ICrA)

作者： Y. Takeda H. Funabashi K. Ichikawa K. Hirose Department of Mechanical Sciences and Engineering Tokyo Institute of Technology Tokyo Japan Tochigi R&D Center AP Research Department Honda Research and Development Company Limited Haga Tochigi Japan Department of Mechanical Engineering Shibaura Institute of Technology Tokyo Japan Hephaist Seiko Company Limited Kawagoe Saitama Japan

We propose an in-parallel actuate mechanism that can simultaneously realize fine positioning resolution and a large working space, and we discuss its infinitesimal displacement characteristics. Based on a kinematic synthesis of this mechanism, an experimental manipulator has been developed and we discuss the results of experiments regarding its fine positioning characteristics.

关键词： Actuators Manipulators Space technology Kinematics research and development Joining processes Mechanical engineering dVd Vibrations Spatial resolution

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Highly scalable and CMOS-compatible STTM cell technology

Highly scalable and CMOS-compatible STTM cell technology

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International Electron devices Meeting (IEdM)

作者： S.J. Ahn G.H. Koh K.W. Kwon S.J. Baik G.T. Jung Y.N. Hwang H.S. Jeong Kinam Kim Advanced Technology Develoument Device Solution Network Samsung Electronics Company Limited Yongin si Gyeonggi South Korea DRAM Desien 3 Device Solution Network Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Develooment Semiconductor R&D Center Device Solution Network Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Device Solution Network Samsung Electronics Co.LTD Yongin-City Kyunggi-Do Korea

The technological challenges associated with STTM (scalable two transistor memory) cells were reviewed. First of all, the basic operating principles of the memory cell are discussed. This is followed by the introduction of the memory array formation and co-process of the I/O transistor, applying a 0.24 /spl mu/m design rule test vehicle. A new cell structure of a surrounded gate STTM structure is introduced. In addition, the process technology and the performance of the memory cell are presented.

关键词： CMOS technology Threshold voltage random access memory Transistors Flash memory Boron Writing Electrons research and development Testing

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Head mounted goggle system with liquid crystal display for evaluation of eye tracking functions on neurological disease patients

Head mounted goggle system with liquid crystal display for e...

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Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

作者： A. lijima M. Haida N. Ishikawa H. Minamitani Y. Shinohara Sch. of Fundamental Sci. & Technol. Keio Univ. Yokohama Japan Department of Physiology School of Medicine Tokai University Kanagawa Japan School of Fundamental Science & Technology (Biomedical Engineering Lab Keio University Yokohama Japan Department of Research and Development Laboratory Nihon Kohden Corporation Tokyo Japan Department of Physiology School of Medicine Kanagawa Japan School of Fundamental Science & Technology (Biomedical Engineering Laboratory) Keio University Yokohama Japan Department of R&D Laboratory Nihon Kohden Corporation Tokyo Japan Department of Neurology School of Medicine Tokai University Kanagawa Japan Department of Neurology School of Medicine Kanagawa Japan

A head mounted goggle type eye detection device with a liquid crystal display was developed for investigation of eye tracking functions of neurological disease patients. The system was based on the image analysis of eye movements and this method precisely detected eye movements. The head mounted display showed a visual target created by a PC in front of subject's eyes. We evaluated eye tracking function during some ocular tasks. Eye tracking test using a movable target was performed on Parkinson's disease patients and normal subjects and parameters which may be useful for diagnosis of the disease were obtained.

关键词： Eye protection Liquid crystal displays Parkinson's disease Head Target tracking Charge coupled devices Charge-coupled image sensors Image analysis Eyes Testing

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13th IIS (UK group) symposium

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Journal of Labelled Compounds and radiopharmaceuticals 2004年第5期47卷

作者： Stephen Caddick Sharon Stone-Elander Simon G. Patching richard B. Herbert Peter J. F. Henderson Adrian r. Brough david A. Middleton Gregory S. Coumbarides Jason Eames Stephanos Ghilagaber Michael J. Suggate Neluka Weerasooriya Alan C. Spivey Chris diaper ratnasothy Srikaran Teyrnon Jones Catherine Noban George J. Ellames Andrew Kohler Harry Wadsworth Ian S. Blagbrough James r. Ballinger Gary Shemilt r Gordon reid Philip d Wilde Andrew Mangion Julian G. Knight Neil J. Geach Mark F. Oldfield Jens Atzrodt Claudia Loewe Michael r. Chappelle Calvin r. Hawes Alan d. Morgan Anthony T. rees Sean L. Kitson Helen Booth John r. Harding david P. Woodhouse Julie A. Bergin Nicholas Bushby david A. Killick Clare d. King david J. Wilkinson Michael J. Hickey Lee P. Kingston John r. Jones William J.S. Lockley Andrew N. Mather Barry McAuley Crist N. Filer Giliyar Ullas Terry Kelly Cindy Lloyd Jeannette Potwin Christopher Wright Stuart L. v Adelman Jane C. Bowden v Adelman Göran N. Nilsson roger Simonsson Alan C Spivey George Ellames Marcel C. Cleij Franklin I. Aigbirhio Jean-Claude Baron John C. Clark Peter Johnström Tim d. Fryer Hugh K. richards Olivier Barret John d. Pickard Anthony P. davenport Department of Chemistry University College London Christopher Ingold Laboratories 20 Gordon Street London WC1 H OAJ UK Research Department Karolinska Pharmacy Karolinska Hospital SE-17176 Stockholm Sweden Karolinska Institute Department of Clinical Neurosciences Clinical Neurophysiology Section R2:01 Karolinska Hospital SE-17176 Stockholm Sweden Astbury Centre for Structural Molecular Biology University of Leeds Leeds LS2 9JT UK Institute of Materials Research University of Leeds Leeds LS2 9JT UK Department of Biomolecular Sciences UMIST P. O. Box 88 Manchester M60 1QD UK Department of Chemistry Queen Mary University of London Mile End Road London E1 4NS UK Department of Chemistry South Kensington Campus Imperial College London SW7 2AZ UK Department of Chemistry University of Sheffield Brook Hill Sheffield S3 7HF UK Department of Chemistry University of Sheffield Dainton Building Brookhill S3 7HF UK Department of Isotope Chemistry and Metabolite Synthesis Sanofi-Synthélabo Willowburn Ave. Alnwick Northumberland NE66 2JH UK Isotope Chemistry and Metabolite Synthesis Sanofi-Synthelabo Alnwick Research Centre Alnwick UK Amersham Health Amersham Buckinghamshire HP7 9LL UK Department of Pharmacy and Pharmacology University of Bath Bath BA2 7AY UK Department of Nuclear Medicine Guy's and St Thomas' Hospital St Thomas Street London SE1 9RT UK Amersham Biosciences Forest Farm Whitchurch Cardiff CF14 7YT UK School of Natural Sciences University of Newcastle upon Tyne Tyne NE1 2RU UK SCYNEXIS Europe Limited Fyfield Business and Research Park Fyfield Road Ongar Essex CM5 0GS UK Aventis Pharma Deutschland GmbH DI&A Chemical Development Global Radiosynthesis Center Frankfurt Germany Amersham Biosciences Forest Farm Whitchurch Cardiff CF14 7YT UK Amersham Biosciences CLASS—Analytical Science Group The Maynard Centre Cardiff CF14 7YT UK Isotope Chemistry Drug Metabolism and Pharmacokinetics Department AstraZeneca Mereside Alderley Park Ma

Studies on the chromoprotein antibiotic neocarzinostatin The ‘special effects’ of microwaving in radiochemistry. Stable isotopes and membrane transport proteins: chemical synthesis and biochemical analysis by solid state NMr Synthetic aspects of c-deuteriation of enolates Opportunities for isotope labelling via solid phase synthesis with organogermanium linkers Labelled methyllycaconitine (MLA)—a key nicotinic acetylcholine receptor ligand Challenges in the preparation of radiolabelled drugs for nuclear medicine The synthesis of carbon-14 labelled PEGs development of palladium catalysed carbonylations for asymmetric synthesis The versatility of labelled cyanide Poster abstracts on the stability and storage of 14 C-labelled compounds The preparation of the P 2 receptor agonist 2-[methyl- 3 H]methylthioadenosine-5′-diphosphate Tritium labelling of aromatic and aliphatic aldehydes using Crabtree's catalyst, [Ir(cod)py(PCy 3 )]PF 6 The specific activity determination and confirmation of identity of a radiolabelled peptide using tandem mass spectrometry design and applicatoin of stable or radiolabelled carbamates Synthesis of the various isotopomers of the MHC II antagonist AZd2315 Synthesis of isotopomers of gefitinib Mercuration/iododemercuration/deiodination: A practical first-line strategy for the rapid preparation of iodinated labelling precursors deuterium labelling with cycloocta-1,5-dienyliridium(i)1,1,1,5,5,5-hexafluoropentan-2,4-dionate: a comparison of d 2 o and d 2 isotope donors Martin d. Kamen (1913-2002): The co-discoverer of carbon-14 An efficient synthesis of [2- 14 c] ethyl nipecotate radiosynthesis conducted under cGMP compliance Computer-simulations for the reactor-synthesis of high-activity, high specific activity, teletherapy sources of europium-152 Parallel optimisation of hydrogen isotope exchange mediated by homogeneous catalysts: A collaboration between the isotope groups at mölndal and charnwood r&d New opportunities for isotope labelling using

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Test circuits for fast and reliable assessment of CdM robustness of I/O stages

Test circuits for fast and reliable assessment of CDM robust...

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Electrical Overstress/Electrostatic discharge Symposium (EOS/ESd)

作者： W. Stadler K. Esmark K. reynders M. Zubeidat M. Graf W. Wilkening J. Willemen N. Qu S. Mettler M. Etherton d. Nuernbergk H. Wolf H. Gieser W. Soppa V. de Heyn M. Natarajan G. Groeseneken E. Morena r. Stella A. Andreini M. Litzenberger d. Pogany E. Gornik C. Foss A. Konrad M. Frank European MEDEA+ ASDESE (Application Specific Design for ESD and Substrate Effects) Cooperation CL DAT LIB IO Infineon Technologies Munich Germany AMI Semiconductors Inc. Oudenaarde Belgium Atmel Germany GmbH Heilbronn Germany Robert Bosch GmbH AE/DICI Reutlingen Germany European MEDEA+ ASDESE (Application Specific Design for ESD and Substrate Effects) Cooperation Erfurt Germany IZM Fraunhofer-Institut Zuverlaessigkeit und Mikrointegration ATIS Munich Germany FH Osnabrück FB Elektrotechnik Osnabrück Germany IMEC Leuven Belgium STMicroelectronics TPA R&D - BCD Process Development Cornaredo (MI) Italy Institute for Solid State Electronics (ISSE) Vienna University of Technology Vienna Austria TPA RD-BCD Process Development STMicroelectronics Cornaredo Italy

CdM hardening during the development of technology, devices, libraries and finally products differs significantly from the process well-established for HBM. This paper introduces a method on the basis of specialized CdM test structures including protection elements and sensitive monitor elements. These test structures mimic typical CdM-sensitive circuits found by physical failure analysis over the years. Manufactured in five different technologies, structures were assembled in both a regular package and a new package emulator. CdM stress tests, vf-TLP tests, backside laser interferometry, device simulation, and failure analysis lead to new insights in the complex interdependencies during CdM and underline the need of CdM-specific test structures.

关键词： Circuit testing robustness Failure analysis Packaging Libraries Protection Condition monitoring Manufacturing Assembly Stress

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Automatically tracked dispersion compensation with penalty-free tunable dispersion equalizer for 40 Gbit/s systems

Automatically tracked dispersion compensation with penalty-f...

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Optical Fiber Communication (OFC) Conference

作者： T. Sugihara K. Shimomura K. Shimizu Y. Kobayashi K. Matsuoka M. Hashimoto T. Hashimoto T. Hirai S. Matsumoto T. Ohira M. Takabayashi K. Yoshiara T. Mizuochi Information Technology Research and Development Center Kamakura Japan Information Technology R&D Center Mitsubishi Electric Corporation Ofuna Kamakura Japan Kamakura Works Japan Advanced Technology R&D Center Japan

ISBN: (纸本)1557527008

The automatic control of a tunable dispersion equalizer by means of a bit error monitor was demonstrated. The tunable dispersion equalizer developed consists of a chirped fiber grating and divided thin film heaters. From the tests of the step response and the automatic dEQ control, we confirmed that the tunable dispersion equalizer based on the grating and heaters is suitable for adaptive dispersion compensation of dispersion variations caused by slowly varying environmental conditions with a fluctuation rate of several minutes or more.

关键词： Equalizers Automatic control Error correction Computerized monitoring Chirp Optical fiber testing Fiber gratings Transistors Automatic testing Temperature control

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40th EASd Annual Meeting of the European Association for the Study of diabetes : Munich, Germany, 5-9 September 2004

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diabetologia 2004年第SUPPL 1期47卷 A1-A464页

作者： Veitenhansl, M. Stegner, K. Hierl, F.-X. dieterle, C. Feldmeier, H. Gutt, B. Landgraf, r. Garrow, A. P. Vileikyte, L. Findlow, A. Waterman, C. Boulton, A. J. M. Shankhdhar, K. Shankhdhar, L. Shankhdhar, U. Petrova, N. L. Foster, A. V. M. Edmonds, M. E. Ferraresi, r. Caravaggi, C. de Giglio, r. Cavaiani, P. Pogliaghi, I. Sommariva, E. Katz, I. A. Harlan, A. Miranda-Palma, B. Prieto-Sanchez, L. Armstrong, d. G. Bowker, J. H. Mizel, M. S. Cernea, S. Wohlgelernter, J. Kidron, M. Modi, P. raz, I. Arbit, E. Nosek, L. Kapitza, C. Beckett, P. Gelfand, r. Goldberg, M. Heise, T. Testa, M. A. Turner, r. r. Hayes, J. F. Scranton, r. E. Simonson, d. C. Yang, Y.-W. Hsu, Y.-J. Naujok, O. Francini, F. Jörns, A. Tiedge, M. Lenzen, S. Abdel-Wahab, Y. H. A. Marenah, L. Orr, d. F. Shaw, C. Flatt, P. r. Chokkalingam, K. Mansell, P. I. Clausen, P. Ekbom, P. damm, P. Feldt-rasmussen, U. Nielsen, B. Mathiesen, E. r. Feldt-rasmussen, B. dewan, S. da Silva, N. Ternan, P. Mc Leong, K. S. Wilding, J. P. H. Asatiani, N. Kurashvili, r. dundua, M. Shelestova, E. Pagava, K. ramazashvili, M. Hod, M. Smirnov, S. Petersen, J. L. A. Justesen, T. I. ringholm Nielsen, L. Müller, C. Højlund, K. Wensaas, A. Kase, E. T. Aas, V. rustan, A. C. Thoresen, G. H. Levin, K. Beck-Nielsen, H. Gaster, M. Im, S.-S. Kang, S.-Y. Kim, S.-Y. Ahn, Y.-H. Lihn, A. S. Schmoll, d. Werner, T. Kienitz, A. Meyer, M. Barthel, A. Ailett, F. Sutherland, C. Walther, r. Grempler, r. Sasson, S. reich, r. Tenenbaum, T. Alpert, E. Anfossi, G. russo, I. Traversa, M. Massucco, P. Mattiello, L. doronzo, G. Trovati, M. Lally, S. Tan, C. Y. Owens, d. Tomkin, G. H. Porchay, I. Péan, F. Bellili, N. Betoulle, d. Balkau, B. Tichet, J. Marre, M. Fumeron, F. Chatellier, G. Alhenc-Gelas, F. Nichols, G. A. Brown, J. B. Hayes, r. P. Bowman, L. drexel, H. Saely, C. H. Marte, T. Benzer, W. Langer, P. Hoefle, G. Moll, W. Aczel, S. Karagiannis, E. Lübben, G. Urquhart, r. Edwards, G. Bruce, S. Howlett, H. S. C. Cugnardey, N. Turner, K. C. Park, J.-S. Fiedorek, F. T. Avogaro, A. Gallo, A. Pinton, P. riz Innenstadt Klinikum der Universität München München Germany Diabetes Center Medizinische Klinik München Germany Medicine The University of Manchester Manchester UK Medicine University of Manchester Manchester UK Podiatry The University of Salford Manchester UK Department of Medicine/Division of Endocrinology Diabetes and Metabolism University of Miami Miami USA Department of Medicine Manchester Royal Infirmary Manchester UK Podiatry L.K.Diabetes Centre Lucknow India Diabetology L.K.Diabetes Centre Lucknow India Medical Nutrition L.K.Diabetes Centre Lucknow India Diabetic Foot Clinic King’s College Hospital London UK Haemodinamic Department - Cardiovascular Division Magenta Hospital Milan Italy Center for the Study and Treatment of Diabetic Foot Pathology Abbiategrasso Hospital Milan Italy Center for the Study and Treatment of Diabetic Foot Pathology Abbiategrasso Hospital Abbiategrasso Italy Department of Orthopedics University of Miami Miami USA Department of Surgery Southern Arizona Veterans Affairs Medical Center Tucson USA Surgery Southern Arizona VA Medical Center Tucson USA Podiatric Medicine and Surgery Rosalind Franklin University School of Medicine and Science North Chicago USA Diabetes Department Center of Diabetes Nutrition and Metabolic Disorders Clug-Napoca Romania Diabetes Unit Hadassah University Hospital Jerusalem Israel Diabetes Unit Hadassah Hebrew University Hospital Jerusalem Israel Research Department Generex Biotechnology Corporation Toronto Canada Hadassah Hebrew University Hospital Jerusalem Israel Medical Research Emisphere Technologies Inc. New York USA Profil Institut fuer Stoffwechselforschung GmbH Neuss Germany Profil Institute for Metabolic Research Neuss Germany Management Profil Inst. für Stoffwechselforschung Düsseldorf Germany Institute for Metabolic Research Profil Neuss Germany Biostatistics Harvard School of Public Health Boston USA Clinical Research Phase V Technologies Wellesley Hills US

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A novel bit line-SToFM (Spacerless top-flat mask)-technology for 90 nm drAM generation and beyond

A novel bit line-SToFM (Spacerless top-flat mask)-technology...

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Symposium on VLSI technology

作者： B.J. Park Y.S. Hwang Y.N. Hwang J.W. Lee K.H. Lee K.T. Jeong H.S. Jeong Y.J. Park Kinam Kim Technology Development Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Kyunggi South Korea

ISBN: (纸本)078037312X

A novel bit line technology for self-aligned storage node contact has been developed to overcome the issues related with downscaling of COB stack drAM cells for the 90 nm drAM technology node and beyond. In this new scheme, both ILd gap fill tolerance and SAC etching selectivity of SiO/sub 2/ to Si/sub 3/N/sub 4/ are significantly enhanced because there is no need to form Si/sub 3/N/sub 4/ spacer around the bit-line and because of the better profile of top mask Si/sub 3/N/sub 4/. Furthermore, compared to the conventional scheme, the novel bit line has the advantages of device performance such as refresh time and speed because the parasitic bit line capacitance is decreased by as much as 25%. The new bit line technology has been developed and verified with a 0.12 /spl mu/m 512 Mb drAM product. The results obtained from a 0.12 /spl mu/m drAM technology confirm that this novel bit line scheme is beneficial for the 90 nm technology node and beyond.

关键词： Space technology random access memory Etching Parasitic capacitance Filling research and development Capacitors High-K gate dielectrics Shape SdrAM

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