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International Electron devices Meeting (IEdM)

作者： J.M. Park Y.S. Hwang d.S. Hwang H.K. Hwang S.H. Lee G.Y. Kim M.Y. Jeong B.J. Park S.E. Kim M.H. Cho d.I. Kim J.-H. Chung I.S. Park C.-Y. Yoo J.H. Lee B.Y. Nam Y.r. Park C.-S. Kim M.-C. Sun J.-H. Ku S. Choi H.S. Kim Y.G. Park Kinam Kim Advanced Technology Development Yongin si South Korea Advanced Technology Development Process Development Semiconductor Research and Development Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Development Semiconductor R&D Div. Samsung Electronics Co. Kiheung-Eup Yongin-City Kyunggi-Do Korea

For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al/sub 2/O/sub 3/-HfO/sub 2/)/TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded drAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in drAM technology, using ArF lithography for aiming 70nm stand-alone and embedded drAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1 fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

关键词： Tin robustness Atherosclerosis random access memory Contact resistance Plugs MIM capacitors Leakage current Capacitance robust stability

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Process integration of Cu metallization and ultra low k (k=2.2)

Process integration of Cu metallization and ultra low k (k=2...

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IEEE International Conference on Interconnect technology

作者： Chuan-cheng Cheng Wei-jen Hsia J. Pallinti S. Neumann J. Koh P. Li Mei Zhu M. Lu Hao Cui T. Fujimoto W. Catabay P. Wright Process Technology Department. Process R&D LSI Logic Corporation Santa Clara CA USA Process Module Development and Advance Research LSI Logic Corporation Gresham OR USA

The first process integration of Cu metallization and next generation CVd ultra low k (Trikon Orion ULK, k=2.2) is presented. The current process condition for a 130 nm node Cu/lowk (k=2.9) process is applied to Cu/ULK and found to be suitable without major modifications. The comparison of post CMP measurement (dishing, erosion, peeling, and scratch) show no significant variation between control (k=2.9) and ULK. The electrical data indicates the successful integration of Cu and ULK. The interconnect capacitance is expected to reduce 20% at 0.1 /spl mu/m technology node using the ULK film.

关键词： Metallization Etching Silicon carbide Chemistry Large scale integration Logic delay dielectric materials dielectric constant Inspection

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Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

Effects of nitrogen in HfSiON gate dielectric on the electri...

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International Electron devices Meeting (IEdM)

作者： M. Koyama A. Kaneko T. Ino M. Koike Y. Kamata r. Iijima Y. Kamimuta A. Takashima M. Suzuki C. Hongo S. Inumiya M. Takayanagi A. Nishiyama Advanced LSI Technology Laboratory Advanced LSI Technology Laboratory Toshiba Corporation Yokohama Japan Environmental Engineering and Analysis Center R&D Center Toshiba Corporation Yokohama Japan Environmental Engineering and Analysis Center R&D Center Toshiba Corporation Process & Manufacturing Engineering Center SoC Research & Development Center Semiconductor Company Toshiba Corporation Yokohama Japan SoC Research Development Center Semiconductor Company Toshiba Corporation Yokohama Japan

The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.

关键词： Nitrogen dielectric constant Temperature Bonding Annealing High-K gate dielectrics Thermal stability Polarization Boron High K dielectric materials

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Modeling discrete event systems with faults using a rules based modeling formalism

Modeling discrete event systems with faults using a rules ba...

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IEEE Conference on decision and Control

作者： Z. Huang V. Chandra S. Jiang r. Kumar Electrical & Computer Engineering University of Kentucky Lexington KY USA Department of Technology Eastern Kentucky University Richmond KY USA Department of Development GM R&D and Planning Warren MI USA Electrical & Computer Engineering Iowa State University Ames IA USA

In this paper we present a methodology which makes the task of modeling failure prone discrete event systems (dESs) considerably less cumbersome, less error prone, and more user-friendly. In order to model failures, we augment the signals set of the rules based formalism proposed by the co-authors of this paper, to include binary valued fault signals, the values representing either a non-faulty or a faulty state of a certain failure type. The rules based modeling formalism is further extended to model real-time systems, and we apply it to model delay-faults of the system as well. The model of a failure prone dES in the rules based can automatically be converted into an equivalent (timed)-automaton model for the analysis in an automaton model framework.

关键词： discrete event systems Automata research and development real time systems delay systems Failure analysis Fault diagnosis

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Evaluation of the secondary electron blue in x-ray lithography by using the pattern replication technique on the mask

Evaluation of the secondary electron blue in x-ray lithograp...

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International Conference on Microprocesses and Nanotechnology

作者： K. Kise H. Watanabe K. Itoga H. Yabe H. Sumitani M. Amemiya Advanced Technology Research and Development Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Adv. Technol. R&D Center Mitsubishi Electr. Corp. Hyogo Japan

Two factors such as the secondary electron blur and Fresnel-Kirchhoff diffraction limit the resolution in the x-ray lithography. In Br resist, the suppression of the secondary electron blur was previously reported. The 30 nm isolated pattern was demonstrated using monochromatic x-ray of 8 A by the 'shadowing technique', where contact exposure method with high contrast mask was used. However, the resolution at the shorter wavelength less than 8 A wasn't sufficiently demonstrated. Here, we have developed the pattern replication technique on the x-ray mask and study the resolution at the x-ray wavelength less than 8 A. This technique is sufficient to evaluate the resolution because the exposure at smaller gap is available, and the stepper vibration can be ignored. A schematic diagram of the pattern replication technique on the mask is shown. Polymer film is coated on the x-ray mask, which correspond to the proximity gap, and positive resist (ZEP-520) of 70 nm thickness is coated on the polymer film. The x-ray is irradiated from the back etching area. The resist on the x-ray mask is developed, where the polymer layer is insoluble to the developer. The SEM photographs of 50 nm L&S patterns in which the kapton filter of 0, 15 and 50 μm thickness is inserted in the beam line are shown. Absorption energy in the resist becomes shorter as the filter thickness is increased. The absorbed energy of 4.4 A corresponds to the absorption edge of Cl element of 15 wt% in the resist. The shorter x-ray wavelength degrades the quality of 50 nm L&S pattern even though the secondary electron blur at the x-ray wavelength less than Cl absorption edge is suppressed due to the addition of Cl element. The normalized deposition energy distributions, where x-rays of the infinitely fine line are irradiated, are shown. The energy spread becomes broader as the x-ray wavelength becomes shorter. This result shows that the secondary electron blur including the x-ray wavelength of 6 A doesn't limit the

关键词： Electrons X-ray lithography resists Electromagnetic wave absorption Polymer films Filters X-ray diffraction Shadow mapping Etching degradation

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催化裂化优化回顾:催化剂对生产链的影响

催化裂化优化回顾:催化剂对生产链的影响

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第十七届世界石油大会

作者： H.S.Cerqueira r.rawet A.F.Costa 卢人严 PETROBRAS R&D Center (CENPES)/Downstream Research Development and Basic Engineering/FCC Technology Rio de Janeiro Brazil.

本文给出了近30年来巴西石油市场的有关资料，并与世界的情况作比较.虽然催化裂化加工能力逐年增加，但所加工原料的质量不断劣化.催化裂化催化剂技术的进步对于适应市场需求的生产链而言，是十分重要的. 催化剂技术的进步推动着新... 详细信息

本文给出了近30年来巴西石油市场的有关资料，并与世界的情况作比较.虽然催化裂化加工能力逐年增加，但所加工原料的质量不断劣化.催化裂化催化剂技术的进步对于适应市场需求的生产链而言，是十分重要的. 催化剂技术的进步推动着新型评价方法的发展.而催化剂评价方法的改进和助剂的开发在催化裂化技术进步中也有重要的作用. 本文提供的数据清楚地表明，在裂化较重原料、降低金属负面影响、改善产品选择性以适应市场需求方面，催化裂化催化剂(以及与工艺进步的结合)起着最根本的作用.

关键词：催化裂化催化裂化催化剂评价方法生产链影响

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A strategy for long data retention time of 512 Mb drAM with 0.12 /spl mu/m design rule

A strategy for long data retention time of 512 Mb DRAM with ...

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Symposium on VLSI technology

作者： H.S. Uh J.K. Lee Y.S. Ahn S.H. Lee S.H. Hong J.W. Lee G.H. Koh G.T. Jeong T.Y. Chung Kinam Kim Technology Development Team Semiconductor R&D Center Yongin-City Kyunggi Korea

ISBN: (纸本)4891140127

data retention time has been investigated for mass-produced 512 Mb drAMs with 0.12 /spl mu/m design rules. Cell junction leakage components were analyzed for the first time using a test structure. It was found that process-induced trap density and electric field at the storage node (SN) junction should be reduced to control leakage current and thus data retention time. Moreover, we propose a novel cell transistor using localized channel and field implantation (LOCFI) which greatly suppresses the ion implantation damage and reduces the electric field at the same time. Finally, data retention time has been improved by 3/spl sim/4 times due to the LOCFI cell transistor with optimized process conditions.

关键词： random access memory Silicon compounds Testing Etching Leakage current research and development Electron traps Ion implantation Power generation Energy consumption

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Highly scalable sub-10F/sup 2/ 1T1C COB cell for high density FrAM

Highly scalable sub-10F/sup 2/ 1T1C COB cell for high densit...

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Symposium on VLSI technology

作者： S.Y. Lee H.H. Kim d.J. Jung Y.J. Song N.W. Jang M.K. Choi B.K. Jeon Y.T. Lee K.M. Lee S.H. Joo S.O. Park K. Kim Technology Development Team R&D Center Memory Division Samsung Electronics Company Limited South Korea

ISBN: (纸本)4891140127

recently, technology innovation for high density and high performance FrAM has been pronounced. Among the breakthrough technologies for high density and high performance FrAM, 1T1C capacitor-on-bitline (COB) cell technology is essential because it can greatly reduce FrAM cell size compared to previous and current 2T2C FrAMs (Kinam Kim, 1999; Lee et al., 1999). design improvement for enhanced sensing ability is also a promising technology for highly reliable mega-bit density FrAM (Jeon et al, 2000). Although the recent demonstration shows a promising future for stand-alone FrAM applications, current 1T1C COB FrAM still has incomparably large cell size factor compared to drAM and flash. This is one of the most challenging issues that FrAM faces for developing high-density stand-alone memory. In this work, a novel cell structure for sub-10 F/sup 2/ cell size is for the first time developed. The key technologies for the sub-10 F/sup 2/ novel cell are: (1) advanced oxidation barrier and PZT film technologies which enables MIM ferroelectric capacitors to be lowered to /spl sim/500 nm thick stack: (2) single-mask capacitor etching technology which can produce >80/spl deg/ ferroelectric capacitor fence slope; (3) no cell via contact technology by which capacitor pitch can ideally be reduced to 2F; (4) an Al-reflow process which enables sub-0.4 /spl mu/m back-end interconnection without degrading the ferroelectric capacitor. The novel cell is demonstrated with an experimental 4 Mb FrAM, where the 1T1C COB cell is fabricated with folded bit line architecture and plate line-up sensing scheme.

关键词： random access memory Ferroelectric films Nonvolatile memory Plugs Ferroelectric materials MIM capacitors Tin Electrodes Oxidation Etching

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SAdS: A new component of Fas-dISC is the accelerator for cell death signaling and is downregulated in patients with colon carcinoma (retraction of vol 7, pg 88, 2001)

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NATUrE MEdICINE 2001年第6期7卷 749-749页

作者： Suzuki, A Obata, S Hayashida, M Kawano, H Nakano, T Shiraki, K Project for the Cell Death Research Basic Technology Research Laboratory Daiichi Pharmaceutical Co. Ltd. Tokyo R&D Center Kitakasai 1-16-13 Edogawa-ku Tokyo 134-8630 Japan Biochemical Laboratory Research & Development Group Kishida Chemical Co. Ltd. Sanda Factory Techno-Park 14-10 Sanda Hyogo 669-1339 Japan Project for the Cell Death Research Basic Technology Research Laboratory Daiichi Pharmaceutical Co. Ltd. Tokyo R&D Center Kitakasai 1-16-13 Edogawa-ku Tokyo 134-8630 Japan Project for the Cell Death Research Basic Technology Research Laboratory Daiichi Pharmaceutical Co. Ltd. Tokyo R&D Center Kitakasai 1-16-13 Edogawa-ku Tokyo 134-8630 Japan The First Department of Internal Medicine Mie University School of Medicine Edobashi 2-174 Tsu Mie 514-8507 Japan The First Department of Internal Medicine Mie University School of Medicine Edobashi 2-174 Tsu Mie 514-8507 Japan

Fas is the death receptor, transducing cell death signaling upon stimulation by Fas ligand. during Fas-initiated cell death signaling, the formation of Fas-death inducing signaling complex (Fas-dISC) is the first step. Here we have identified a new component of Fas-dISC which we call 'small-accelerator for death signaling' (SAdS). SAdS cdNA encodes a 150 amino acid polypeptide (Mr = 16,700). during Fas-mediated cell death, SAdS enhances the interaction of Fas-death domain-interactive factors (FAdd) and procaspase-8, and deletion mutant analysis has identified FAdd- and caspase-8-interactive domains in SAdS. Inhibition or removal of SAdS delays Fas-mediated cell death. In addition, we demonstrate the deletion or mutation of SAdS in patients with colon carcinoma and that exogenous SAdS expression in human colon carcinoma SW480 cells that lack SAdS leads to re-acquisition of Fas-mediated cell death. Here, we propose that SAdS is one of the cell death-associated factors and enhances Fas-dISC formation, especially FAdd and procaspase-8 recruitment.

关键词： down-regulation Signal Transduction Antigens Cd95 Apoptosis Base Sequence Caspases Colonic Neoplasms dNA Primers Humans Protein Binding

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Feasibility study for recycling of JVC compact discs for use in the manufacturing of Motorola plastic housings

Feasibility study for recycling of JVC compact discs for use...

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International Symposium on Environmentally Conscious design and Inverse Manufacturing (Ecodesign)

作者： M. Stutz d. Schnecke T. Takahashi N. Kawai K. Tsujita MATC Europe Motorola Advanced Technology Center Europe Wiesbaden Germany Technology Development Division (Kurihama R&D Center) Victor Company of Japan Limited Yokosuka Kanagawa Japan

ISBN: (纸本)0769512666

In a joint research project between JVC Kurihama r&d Center and Motorola Advanced technology Center-Europe the recycling of JVC compact discs (Cds) for use in the manufacturing of Motorola plastic housings was developed and evaluated. returned Cds, made out of polycarbonate (PC), can potentially be used to mold housings of electronic products, also made out of PC. Closing the PC loop is not only technically feasible, but also a gain for the environment, reducing the resource and energy consumption comparing virgin versus recycled PC. To allow returned Cds to be processed into plastic housings, Cds have to be decoated of the aluminum layer, the lacquer and the label ink in order to serve as input material for producing recycled PC. Then the clear Cds are crushed, blended with virgin PC and pelletized to obtain defined material properties. The JVC Kurihama r&d Center developed decoating methods for returned Cds, based on extensive trials using mechanical and chemical decoating techniques, resulting in clean Cd parts. The material properties of the plastic recyclate was tested and specified. After evaluating the promising test results by JVC Kurihama r&d Center on the recycled PC material, the Motorola Advanced technology Center-Europe decided to run a trial mold of an actual housing at a molder in Germany. A two-way mobile radio cover was molded with recycled Cd material. The material properties of the original versus recycled resin were evaluated. The cover made with recycled Cds was put through an ALT (Accelerated Life Test), yielding in more information on the possibilities to use recycled material. The joint research project shows that a high tech product such as the Cd can serve as a basis for housings of electronic and electrical equipment after its useful life. With a sophisticated technology the PC loop is closed, benefiting ecology and economy.

关键词： recycling Plastics material properties materials testing Manufacturing Energy consumption Aluminum Lacquers Ink Chemicals

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