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Evaluation of alignment accuracy in processed wafers and SiC masks on a scattered-light alignment system for x-ray aligners

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1997年第6期15卷 2471-2471页

作者： Miyatake, Tsutomu Hirose, Masaoki Shoki, Tsutomu Ohkubo, ryo Yamazaki, Kuniaki Laboratory for Quantum Equipment Technology Sumitomo Heavy Industries Ltd. 2-1-1 Yato-cho Tanashi-shi Tokyo 188 Japan R&D Center HOYA Corporation 3-1-1 Musashino Akishima-shi Tokyo 196 Japan Research & Development Operations Semiconductor Products Division Nippon Motorola Ltd. 2-9-1 Akedori Izumi-ku Sendai-shi Miyagi 981-32 Japan

The alignment performances of the video-based scattered-light alignment (SLA) system for 0.1 μm lithography are described in this article. The SLA system has high sensitivity to the silicon carbide (SiC) mask without an antireflection coating (ArC). This article especially focuses on the alignment accuracy in processed wafers and the dependency of the alignment accuracy on the SiC membrane thickness. A series of alignment tests was done on a lab-based vertical wafer stage using the SiC masks. In order to evaluate the alignment accuracy in processed wafers, we prepared four processed wafer types: nitride, oxide, poly-Si, and aluminum. The high position sensing repeatability in the range of 4.8–6.4 nm (3σ) was obtained using the combination of the four processed wafers and a 2-μm-thick SiC membrane without the ArC. We also obtained the alignment accuracy using the wafer alignment marks only, resulting in an alignment accuracy of 10.0, 8.8, 9.1, and 35.7 nm (3σ) for the nitride, oxide, poly-si, and aluminum wafers, respectively. In addition, the dependency of the alignment accuracy on the SiC membrane thickness was obtained using the membranes with thicknesses of 2, 3, 4, and 5 μm. An improvement of the alignment accuracy in the aluminum is discussed.

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Interferometric cross talk-free optical add/drop multiplexer using cascaded Mach-Zehnder fiber gratings

Interferometric cross talk-free optical add/drop multiplexer...

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Optical Fiber Communication (OFC) Conference

作者： T. Mlzuochi T. Kitayama Inf. Technol. R&D Center Mitsubishi Electr. Corp. Kamakura Japan Information Technology Research and Development Center Mitsubishi Electric Corporation Limited Kamakura Japan

ISBN: (纸本)1557524815

An optical add/drop multiplexer (AdM) has allowed us to exploit scalability in wavelength-division multiplexing (WdM) networks. A Mach Zehnder interferometer with photoinduced fiber Bragg gratings (MZ FG) is a promising device as a wavelength-selectable optical AdM circuit. In this study, we will present a novel method to provide the interferometric cross talk-free device based on a cascaded MZ-FG.

关键词： Optical interferometry Optical add-drop multiplexers Add-drop multiplexers Bragg gratings Wavelength division multiplexing reflectivity Circuits Optical losses Propagation losses Optical receivers

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New piezoelectric transformer converter for AC-adapter

New piezoelectric transformer converter for AC-adapter

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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： T. Zaitsu Y. Fuda Y. Okabe T. Ninomiya S. Hamamura M. Katsuno Transmission Device Development Department 2nd Transmission Division Transmission Operations Unit NEC Corporation Limited Kawasaki Japan Department of Electrical and Electronics Systems Engineering Kyushu University Fukuoka Japan R&D center TOKIN Corporation Sendai Japan Device Technology Department Transmission and Terminals Division NEC Engineering Limited Kawasaki Japan

A new piezoelectric transformer (PT) converter which functions as an AC-adapter is proposed. The device's PT operates in longitudinal-vibration mode and features good isolation, incombustibility and compact size. The PT was implemented as a part of the new AC-adapter and a significant reduction in size was achieved as a result. Experimental evaluation of the new adapter confirms that good performance was successfully obtained in spite of the need to comply with strict safety and noise standards.

关键词： Power transformer insulation Safety National electric code Vibrations Application software Inverters Commercialization Power generation Magnetic materials research and development

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Influence of human engineering on manning levels and human performance on ships

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NAVAL ENGINEErS JOUrNAL 1997年第5期109卷 67-76页

作者： Anderson, dE Oberman, Fr Malone, TB Baker, CC David E. Anderson:has a bachelor of science degree in environmental engineering from Florida Technological University and a master's degree in environmental engineering from the University of Central Florida. He is a graduate of the Naval Sea Systems Command's Engineer-In-Training (EIT) Program. Mr. Anderson was instrumental in introducing the collective protection system (CPS) in the U.S. Navy developing the initial forward-fit package for the USS Gunston Hall and the engineering change proposal (ECP) for the USS Wasp. In 1990 he joined the Human Systems Integration (HSI) Division (SEA 55W5) where he was task leader for auxiliary ships. He is currently the HSI manager for the future technology variant of the SeaLift ship and the future carrier. Association of Scientists and Engineers 33rdAnnual Technical Symposium 26 April 1996. Fred R. Oberman:has B.A. and M.A. degrees from the University of Chicago and Loyola University (experimental psychology) and an M.S. degree in industrial engineering and operations research from Virginia Polytechnic Institute (VPI). He has more than 30 years experience in HSI management planning research analysis design and testing in government and private sector positions. He is currently responsible for NavSea HSI generic research and tool development efforts. He is responsible for Human Engineering Specifications and Standards (Commercial Hypertext) and is the NavSea 03D7 representative on HSI in Performance Specifications and for integration of HSI within Integrated Logistic Support (ILS). He has served as DoD HSI SubTAG chair and member of the Simulation and Modeling Test and Evaluation Display and Control Systems Human Computer Interaction Specifications and Standards and Systems Design Sub Tags as a member of the Society of Naval Architects and Marine Engineers (SNAME) Systems Safety Panel and a member of NATO RSG 14 on man-machine analysis. Thomas B. Malone: CHFEP received a Ph.D. in experimental psychology from Fordham University in 1964. He is president of Carlow

The objectives of Human Engineering (HE) are generally viewed as increasing human performance, reducing human error, enhancing personnel and equipment safety, and reducing training and related personnel costs. There are other benefits that are thoroughly consistent with the direction of the Navy of the future, chief among these is reduction of required numbers of personnel to operate and maintain Navy ships. The Naval research Advisory Committee (NrAC) report on Man-Machine technology in the Navy estimated that one of the benefits from increased application of man-machine technology to Navy ship design is personnel reduction as well as improving system availability, effectiveness, and safety The objective of this paper is to discuss aspects of the human engineering design of ships and systems that affect manning requirements, and impact human-performance and safety The paper will also discuss how the application of human engineering leads to improved performance, and crew safety, and reduced workload, all of which influence manning levels. Finally, the paper presents a discussion of tools and case studies of good human engineering design practices which reduce manning.

关键词： Human engineering

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Effects of Nd2O3 and TiO2 addition on the microstructures and microwave dielectric properties of BaO-Nd2O3-TiO2 system

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ETrI JOUrNAL 1996年第1期18卷 15-27页

作者： Kim, TH Park, Jr Lee, SJ Sung, HK Lee, SS Choy, TG Component Technology Development Section ETRI R&D RF copmponent field ETRI

The effects of Nd2O3 and TiO2 addition on the microstructures and microwave dielectic properties of BaO-Nd2O3-TiO2 system were investigated. BaNd2Ti4O12 or BaNd2Ti5O14 phases were observed for compositions based on BaO/Nd2O3 = 1 ratio. The compositions deviated from BaO/Nd2O3 = 1 ratio were composed of major phases of BaNd2Ti5O14, and the compound of Nd2O3 and TiO2 (Nd2Ti2O7) or that of BaO and TiO2 (BaTi4O9). The microstructure of ceramic with BaO . Nd2O3 . 4TiO(2) composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing Nd2O3, the optimum sintering temperature with maximum density increased, and the dielectric constant(epsilon(r)) and quality factor(Q) decreased due to the formation of secondary phases. With increasing TiO2, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency tau(f) shifted toward positive direction. The dielectric ceramics with BaO/Nd2O3 = 1 showed Q values of above 2000 and dielectric constants of above 80 at 3 GHz.

关键词： .compositions sintering technology development TiO System maximum density

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A solid-phase epitaxy with clean surface formation using SiH4 and evaluation of SOI layer

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ELECTrONICS ANd COMMUNICATIONS IN JAPAN PArT II-ELECTrONICS 1996年第12期79卷 71-78页

作者： Kodama, M Funabashi, H Mitsushima, Y Taga, Y Toyota Central R&D Laboratories Inc. Nagakute Aichi-ken Japan 480-11 Received his B.S. and M.S. degrees in electronics from Gifu University in 1985 and 1987 respectively. He joined Toyota Central R&D Laboratories in 1987 and has been working in the field of LST process technology. Received his B.S. degree in electrical engineering from Nagoya Institute of Technology in 1982. He joined Toyota Central R&D Laboratories in 1982 and has been working in the field of sensor technology. Received his B.S. and Ph.D. degrees in nuclear engineering from Nagoya University in 1975 and 1980 respectively. He joined Sanyo Electric Co. in 1980 and in 1991 he transferred to Toyota Central R&D Laboratories where he has been engaged in research on LSI process technology. Received his B.S. and M.S. degrees in measurement engineering from Nagoya Institute of Technology in 1968 and 1970 respectively. In 1970 he joined Toyota Central R&D Laboratories where he has been engaged in research on the surface interface physics and development of thin film material. He is presently a principal research fellow at the Toyota Central R&D Laboratories.

We investigated a method of solid-phase epitaxy (SPE) using low-vacuum, low-pressure chemical vapor deposition (LPCVd) equipment without the load lock chamber that is usually used for the Si LSI process. This is a new method of clean surface formation in which the Si substrate is heated after seed formation in an atmosphere of SiH4 gas. Using this method, an L-SPE length of 4 mu m was obtained. The reason for the success of this method appears to be that the seed surface cleaned by HF dipping is preserved by the SiH4 gas. To evaluate the quality of the silicon-on-insulator (SOI) layer formed by this method, a MOSFET and a PN diode were experimentally produced. The MOSFET exhibited normal transistor action, which confirmed that the SOI layer had satisfactory quality without any problem in manufacturing the MOSFET. However, it was found that the n value of the forward direction current characteristic of the PN diode was 1.156 and that the SOI layer had more recombination centers than the Si substrate (n = 1.050). (C) 1997 Scripta Technica, Inc.

关键词： SOI MOSFET LPCVd SPE

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Abstracts of Papers Presented at the Japan-Israel Workshop on Novel Approaches for Controlling Insect Pests and Plant diseases Binational Plant Protection Cooperation

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Phytoparasitica 1997年第4期25卷 345-366页

作者： I. Yamamoto I. Ishaaya A. r. Horowitz Shinzo Kagabu Akinori Hirashima E. Shaaya M. Kostjukovsky K. r. S. Ascher d. Veierov N. Aharonson E. Kleter Miriam Eliyahu Annie Fenigstein Yoel Sasson E. Gershburg d. Stockholm H. rivkin N. Zilberberg M. Gurevitz N. Chejanovsky Yechiel Shai Ehud Gazit M. Keller B. Sneh N. Strizhov Avital regev Szuszanna Koncz-Kaiman C. Koncz J. Schell Aviah Zilberstein Galina Gindin I. Barash B. raccah I. S. Ben-Ze’ev Itamar Glazer A. Navon Ephraim Cohen Satoshi Nakamura Takane Fujimori Ezra dunkelblum Moshe Kehat Tetsu Ando Miriam Altstein Orna Ben-Aziz Irit Schafler I. Seltzer C. Gilon Ada rafaeli Carina Gileadi K. Ohsawa Yael Heifetz Shalom W. Applebaum A. Shani I. Yamaguchi T. Motoyama T. Yoshimoto T. Fujita Yigal Cohen Alexander Baider Sonja Farkash Shlomit Klopman dvir Taler Shinkichi Tawata Baruch Sneh Y. Elad Abraham Sztejnberg S. droby E. Chalutz Yeheskel Antignus Moshe Lapidot Mitsuro Hyakumachi Uri Hanania Noa Furman Adi Avni Vivian Fridman Shai Morin Mohammad Zeidan Hanokh Czosnek Toshihiro Kajiwara Dept. of Agricultural Chemistry Tokyo University of Agriculture Tokyo Japan Dept. of Entomology ARO The Volcani Center Bet Dagan Israel Dept. of Chemistry Faculty of Education Gifu University Gifu Japan Dept. of Agricultural Chemistry Kyushu University Fukuoka Japan Dept. of Stored Products ARO The Volcani Center Bet Dagan Israel Inst. of Plant Protection ARO The Volcani Center Bet Dagan Israel R&D Division Makhteshim Chemical Works Be’er Sheva Casali Inst. of Applied Chemistry The Hebrew University of Jerusalem Jerusalem Israel Inst. of Plant Protection ARO The Volcani Center Bet Dagan Dept. of Botany Tel-Aviv University Tel Aviv Israel Dept. of Membrane Research and Biophysics The Weiztnann Institute of Science Rehovot Israel Dept. of Plant Sciences Tel-Aviv University Tel Aviv Israel Max Planck Institute for Plant Breeding Research Köln Germany Dept. of Botany Tel-Aviv University Tel Aviv Plant Protection and Inspection Services Ministry of Agriculture and Rural Development Bet Dagan Israel Dept. of Nematology ARO The Volcani Center Bet Dagan Israel Dept. of Entomology The Hebrew University of Jerusalem Faculty of Agricultural Food and Environmental Quality Sciences Rehovot Israel Japan International Research Center for Agricultural Sciences Ministry of Agriculture Forestry and Fisheries Tsukuba 305 Japan Plant Protection Research Laboratory Japan Tobacco Inc. Yokohama 227 Japan Graduate School of Bio-Applications and Systems Engineering (BASE) Tokyo University of Agriculture and Technology Koganei Tokyo 184 Japan Inst. of Plant Protection ARO The Volcani Center BetDagan Dept. of Organic Chemistry The Hebrew University of Jerusalem Jerusalem Israel Dept. of Stored Products ARO The Volcani Center BetDagan Israel NODAI Research Inst. Setagaya-ku Tokyo 156 Dept. of Chemistry Ben-Gurion University of the Negev Be’er Sheva Israel The Inst. of Physical and Chemical Research (RIKEN) Saitama 351-01 Japan Mitsui Toatsu Agricultural Ch

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Advanced integration technology for a highly scalable SOI drAM with SOC (Silicon-On-Capacitors)

Advanced integration technology for a highly scalable SOI DR...

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International Electron devices Meeting (IEdM)

作者： Il-Kwon Kim Woo-Tag Kang Joon-Hee Lee Sunil Yu Sang-Cheol Lee Kyehee Yeom Yun-Gi Kim duck-Hyung Lee Giho Cha Byoung Hun Lee Sang-In Lee Kyu-Charn Park Tae-Earn Shim Chang-Gyu Hwang Technology Development Center Samsung Electronics Company Limited Yongin si Kyunggi South Korea Process Development Team Semiconductor R&D Sector Samsung Electronics Company Limited Yongin si Kyunggi South Korea

ISBN: (纸本)0780333934

A fully planarized 16 Mb SOI drAM has been successfully fabricated featuring pattern-bonded SOI (PBSOI), CMP processes, STI (Shallow Trench Isolation) and the silicon-on-capacitor (SOC) structure with 0.3 um technology using i-line lithography. The floating body effects of cell and peripheral SOI transistors are suppressed by the LIF (Local Implantation post Field oxidation) and halo implantation. The fully planarized process with SOC structure is established for multi-gigabit drAM and embedded memory devices.

关键词： random access memory Silicon Isolation technology Boron Threshold voltage Contact resistance research and development Lithography Oxidation degradation

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Error tracking mode AC current waveform control method for three-phase self-commutated voltage source power converters

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ELECTrICAL ENGINEErING IN JAPAN 1996年第5期117卷 95-109页

作者： Ohshima, M Tokyo Electric Power Co. Ltd. [?]Graduated from the Department of Electrical Engineering of the Faculty of Engineering University of Tokyo in March 1975. He joined Tokyo Electric Power Co. Ltd. in April of the same year. He was engaged in maintenance and inspection work of protective relays at Shinagawa and Ohi power stations from 1978 to 1980. After working on investigation of new technologies he was engaged in the research and development project of sodium sulfur battery systems for customers and networks. He is currently a Deputy Head of Power Electronics Department of Power Engineering R&D at Power Technology Center. He is a member of the IEEE EPE Association and Electrochemical Association.

A novel design theory for a three-phase self-commutated power conversion system (PCS) to perform as an ac current source is proposed. In this new ac current waveform control-method termed error tracking mode, the switching instructions of main devices are decided only by the error function of ac current at every data sampling time that comes in a constant period. The performance is theoretically evaluated. Simulation by SPICE also is executed and the characteristics are inspected. Error tracking mode has the following attractive features. It can treat two arbitrary current waveforms as target functions of two-phase arbitrary ac currents. The error between actual ac current value and the objective function value can be controlled and guaranteed to be less than an arbitrary value, which is given beforehand. All control components can be digitized. The minimum continuous on and off time of main devices is guaranteed in advance. No special starting control is necessary because actual ac currents are guaranteed to start tracking the target functions automatically. Error tracking mode makes contributions to improve precision in current control and to reduce current harmonics of self-commutated voltage source power converters.

关键词： three-phase ac-dc converter three-phase PCS PWM control dispersed power sources current regulation decoupled control

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A novel, sub-harmonic pumping direct conversion receiver with high instantaneous dynamic range

A novel, sub-harmonic pumping direct conversion receiver wit...

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Microwave, MTT-S International Symposium

作者： M. Shimozawa K. Kawakami K. Itoh A. Iida O. Ishida Information Technology Research and Development Center Mitsubishi Electric Corporation Limited Kamakura Kanagawa Japan Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Inf. Technol. R&D Center Mitsubishi Electr. Corp. Kanagawa Japan

A novel sub-harmonic pumping direct conversion receiver (SHP-dCr) employing antiparallel diode pair (APdP) is proposed for high instantaneous dynamic range receivers used in mobile communications. The proposed SHP-dCr can suppress even harmonic mixing products, such as second order intermodulation (IM2) and LO noise that interfere a desired baseband signal. Moreover, the design condition of load resistance is indicated by analytical and experimental approaches for improving diode mixer disadvantages of lower conversion gain and higher LO power. A developed L-band SHP-dCr without a low noise amplifier achieves NF of 18.5 dB, IP3 at input port of 3 dBm and IM2 is below -90 dB in the actual input range.

关键词： dynamic range Baseband rF signals diodes radio frequency Mobile communication Power dividers Noise figure Power amplifiers radiofrequency amplifiers

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