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Waste Management Bulletin 2024年第4期2卷 184-193页

作者： Hogan Itam, daniel Chimeme Martin, Ekwueme Taiwo Horsfall, Ibiba Department of Civil and Environmental Engineering Faculty of Engineering & Technology University of Calabar Cross Rivers State Nigeria Department of Agricultural and Bioresources Engineering Michael Okpara University of Agriculture Abia State Umudike Nigeria Department of Research and Development (R&D) Eco-Thrivetide Consulting Ltd Rivers State Port Harcourt Nigeria

The increasing volume of solid waste generated globally necessitates efficient classification systems to enhance recycling and waste management processes. Convolutional Neural Networks (CNNs) have emerged as a powerful tool for image classification tasks, including solid waste identification. However, difficult external variables including changes in illumination, occlusion, and background clutter can have a big impact on CNN performance. Furthermore, pooling procedures frequently cause classic CNNs to lose spatial information, which might impair performance on tasks requiring extremely fine sense of place. This paper presents a comprehensive study on the application of an improved CNN-based models for solid waste classification. In the present study we explored image data resizing, augmentation technique and hyperparameter tuning to improve the performance of the proposed model. The results demonstrate that the improved-CNN model achieved high accuracy of 94.40 % compared to the conventional CNN and other deep learning model such as resNet-50, Inception-V3 and VGG-19 (81.83, 66.67, 52.83 and 56.00 %). © 2024 The Authors

关键词： data augmentation techniques Enhanced convolutional neural network (ECNN) Machine learning in waste management Solid waste classification

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realizing High Thermoelectric Performance in n-Type Se-Free Bi_(2)Te_(3)materials by Spontaneous Incorporation of FeTe_(2)Nanoinclusions

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Energy & Environmental materials 2024年第4期7卷 344-354页

作者： Jamil Ur rahman Woo Hyun Nam Yong-Jae Jung Jong Ho Won Jong-Min Oh Nguyen Van du Gul rahman Víctor M.García-Suárez ran He Kornelius Nielsch Jung Young Cho Won-Seon Seo Jong Wook roh Sang-il Kim Soonil Lee Kyu Hyoung Lee Hyun Sik Kim Weon Ho Shin Leibniz Institute for Solid State and Materials Research Dresden 01069Germany Advanced Materials Convergence R&D Division Korea Institute of Ceramic Engineering&TechnologyJinju 52861South Korea Department of Electronic Materials Engineering Kwangwoon UniversitySeoul 01897South Korea Department of Energy Engineering Dankook UniversityCheonan 31116South Korea Faculty of Fundamental Science Phenikaa UniversityHanoi 10000Vietnam Department of Physics Quaid-i-Azam UniversityIslamabad 45320Pakistan Departamento de FAısica Universidad de OviedoOviedo 33007Spain Nanomaterials and Nanotechnology Research Center-CINN El Entrego 33940Spain Department of Materials Science and Engineering Yonsei UniversitySeoul 03722South Korea School of Nano&Materials Science and Engineering Kyungpook National UniversitySangju 37224South Korea Department of Materials Science and Engineering University of SeoulSeoul 02504South Korea School of Materials Science and Engineering Changwon National UniversityChangwon 51140South Korea

Bi_(2)Te_(3)-based materials have drawn much attention from the thermoelectric community due to their excellent thermoelectric performance near room ***,the stability of existing n-type Bi_(2)(Te,Se)_(3)materials is still low due to the evaporation energy of Se(37.70 kJ mol^(-1))being much lower than that of Te(52.55 kJ mol^(-1)).The evaporated Se from the material causes problems in interconnects of the module while degrading the ***,we have developed a new approach for the high-performance and stable n-type Se-free Bi_(2)Te_(3)-based materials bymaximizing the electronic transport while suppressing the phonon transport,at the same *** generated FeTe_(2)nanoinclusions within the matrix during the melt-spinning and subsequent spark plasma sintering is the key to simultaneous engineering of the power factor and lattice thermal *** nanoinclusions change the fermi level of the matrix while intensifying the phonon scattering via *** a fine-tuning of the fermi level with Cu doping in the n-type Bi_(2)Te_(3)-0.02FeTe_(2),a high power factor of∼41×10^(-4)Wm^(-1)K^(-2)with an average zT of 1.01 at the temperature range 300-470 K are achieved,which are comparable to those obtained in n-type Bi_(2)(Te,Se)_(3)*** proposed approach enables the fabrication of high-performance n-type Bi_(2)Te_(3)-based materials without having to include volatile Se element,which guarantees the stability of the ***,widespread application of thermoelectric devices utilizing the n-type Bi_(2)Te_(3)-based materials will become possible.

关键词： Bi_(2)Te_(3) energy harvesting FeTe_(2) nanoinclusion n-type materials thermoelectric

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review of c-Si PV module recycling and industrial feasibility

EES Solar

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EES Solar 2025年第1期1卷 9-29页

作者： Ganghui Wei Yihao Zhou Zhongren Hou Yanzheng Li Qiming Liu Jun Chen deyan He School of Materials and Energy LONGi Institute of Future Technology Lanzhou University Lanzhou 730000 China Central R&D Institute LONGi Green Energy Technology Co. Ltd Xi'an 710000 Shaanxi China

As solar energy emerges as a pivotal renewable energy source, the environmental challenge of end-of-life photovoltaic (PV) module disposal intensifies. This literature review examines the recycling methodologies for both conventional and emerging PV modules, with a particular focus on crystalline silicon PV technology. It highlights the necessity for sustainable waste management practices that are driven by environmental concerns. The study classifies recycling methodologies into two categories: non-destructive cell recovery and comprehensive component recycling. It examines the technological processes, efficiency, and potential for material recovery, including precious metals and silicon, associated with each category. The economic viability and environmental advantages are evaluated in terms of reduced raw material extraction and resource conservation. The paper assesses the legislative and political context of PV module recycling across regions, identifying deficiencies in existing technologies and policies. The paper makes a case for a multidisciplinary approach to improve recycling rates, encompassing technological innovation, supportive policy frameworks, and global recycling standards. The objective is to provide an overview of the current state of PV module recycling and to inform stakeholders in the renewable energy sector about prospective research and policy directions.

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Tandem Interferometer-Based Optical Fiber Hydrogen Sensors Operating in Fluids 28

Tandem Interferometer-Based Optical Fiber Hydrogen Sensors O...

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28th International Conference on Optical Fiber Sensors, OFS 2023

作者： Lee, Sungjae ryu, Bowon Kim, Inho Song, Yong-Won Center for Opto-electronic Materials and Devices Korea Institute of Science and Technology Seoul02792 Korea Republic of Division of Nano and Information Technology University of Science and Technology Daejeon34113 Korea Republic of Department of R&D Innoteco Inc. Kyeonggi-do Siheung15073 Korea Republic of

A robust optical fiber hydrogen sensor structured by consecutive interferometers is demonstrated being immunized against temperature and pressure fluctuation. Its dramatically enhanced sensitivity and reliability are ... 详细信息

ISBN: (纸本)9781957171302

关键词： Optical fibers

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Negative data in data Sets for Machine Learning Training

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OrGANIC LETTErS 2023年第17期25卷 2945-2947页

作者： Maloney, Michael P. Coley, Connor W. Genheden, Samuel Carson, Nessa Helquist, Paul Norrby, Per-Ola Wiest, Olaf Department of Chemistry and Biochemistry University of Notre Dame Notre Dame Indiana 46556 United States Department of Chemical Engineering and Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139 United States Molecular AI Discovery Sciences R&D AstraZeneca Gothenburg Pepparedsleden 1 SE-431 83 Mölndal Sweden Early Chemical Development Pharmaceutical Sciences R&D AstraZeneca Macclesfield SK10 2NA U.K. Data Science and Modelling Pharmaceutical Sciences R&D AstraZeneca Gothenburg Pepparedsleden 1 SE-431 83 Mölndal Sweden

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Oncology research 2024年第2期32卷 421-432页

作者： SEUNG-HEE GWAK JUHYUN LEE EUNJI OH dOHYUN LEE WONSHIK HAN JONGMIN KIM KYONG-TAI KIM Department of Life Sciences Pohang University of Science and TechnologyPohang37673Korea R&D Center NovMetaPharma Co.Ltd.Pohang37668Korea Department of Surgery and Cancer Research Institute Seoul National University College of MedicineSeoul03080Korea Generative Genomics Research Center Global Green Research&Development CenterHandong Global UniversityPohang37554Korea

Genetic information is transcribed from genomic dNA to mrNA,which is then translated into threedimensional *** can undergo various post-transcriptional modifications,including rNA editing that alters mrNA sequences,ultimately affecting protein *** this study,rNA editing was identified at the 499th base(c.499)of human vaccinia-related kinase 2(VrK2).This rNA editing changes the amino acid in the catalytic domain of VrK2 from isoleucine(with adenine base)to valine(with guanine base).Isoleucine-containing VrK2 has higher kinase activity than the valine-containing VrK2,which leads to an increase in tumor cell *** we reported that VrK2 directly interacts with dystrobrevin-binding protein(dysbindin)and results in reducing its ***,we demonstrate that isoleucine-containing VrK2 decreases the level of dysbindin than valinecontaining *** interacts with cyclin d and thereby regulates its expression and *** reduction in the level of dysbindin by isoleucine-containing VrK2 further enhances the cyclin d expression,resulting in increased tumor growth and reduction in survival *** has also been observed that in patient samples,VrK2 level was elevated in breast cancer tissue compared to normal breast ***,the isoleucine form of VrK2 exhibited a greater increase in breast cancer ***,it is concluded that VrK2,especially dependent on the 167th variant amino acid,can be one of the indexes of tumor progression and proliferation.

关键词： VrK2 Kinase activity Breast cancer Tumor rNA editing Cell proliferation Cell growth

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A Low-Temperature Ag-Ag direct Bonding technology Towards Ten-Thousand-Level Microbumps Arrays Utilizing Plasma-Induced Grown Nanoparticles of Silver Oxide

A Low-Temperature Ag-Ag Direct Bonding Technology Towards Te...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Taiyu Wang Xiaochen Xie Songzhao Gu Sichen Liu Shuang Zhao Wenxuan Gao Pengrong Lin Shimeng Xu Zhibo Qu Yong Wang Xiuchen Zhao Yongjun Huo School of Materials Science & Engineering Beijing Institute of Technology Beijing China Package R&D Center Beijing Microelectronics Technology Institute Beijing China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

With the development of microelectronics technology, the semiconductor industry has entered the postMoore's Law era. Many semiconductor manufacturing companies have showcased their 3d integration solutions, such as Foveros of Intel and AMd's 3d V-Cache. The current mainstream approach to 3d stacking involves utilizing through silicon vias (TSV), Cu micro-bumps, and lead-free solder to achieve 3d-IC packaging or heterogeneous integration. However, the formation of brittle intermetallic compounds (IMCs) and the manifestation of size effects can lead to higher electrical resistance and severe reliability issues in solder-based micro-bumps for 3d-IC packaging. recently, our group has invented a novel interconnection technology through Ag-Ag direct bonding, utilizing plasma-induced grown nanoparticles of silver oxide, whose process was designed for 3d-ICs interconnects. Through controlling the surface morphology of plasma-induced grown silver oxide, this technology can effectively overcome the initial asperities on the bonding surface, thus accommodating larger surface roughness (> 100 nm). In this work, for the first time, we have demonstrated the application of this technology to achieve “point-to-point” bonding with a high-density micro-bump array at tenthousand-level, whereby finding the optimal bonding parametric settings. The wafer-level copper micro-bump arrays (diameter < 30 μm) are prepared by using photolithography, electroplating, and chemical mechanical polishing (CMP) processes, and Ag is deposited as the all-metal bonding layer using magnetron sputtering technology. Subsequently, plasma-induced nanoparticles of silver oxide (Plasma-induced Ag2O NPs) have grown on the Ag layer with our patented technology. More importantly, we design a new bonding scheme with a “two-steps” process to achieve lowtemperature solid-state bonding with high-density micro-bump array at the ten-thousand-level, which comprised with two stages: the pre-bonding stage and the final bon

关键词： Nanoparticles Silver Scanning electron microscopy Three-dimensional displays Surface morphology Morphology Surface roughness

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Waveguide absorbers based on spiral acoustic black holes for damping vibration in a plate structure 24

Waveguide absorbers based on spiral acoustic black holes for...

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24th International Congress on Acoustics, ICA 2022

作者： Park, Seongmin Lee, Jae Yeon Jeon, Wonju Department of Mechanical Engineering Korea Advanced Institute of Science and Technology Korea Republic of 1st R&D Center Agency for Defense Development Korea Republic of

We propose a waveguide absorber (WGA) based on a spiral acoustic black hole (ABH) to reduce vibration in plates. The geometrical dimensions of the WGA are determined so that it has a lower cut-on frequency than a target frequency by using the impedance method. We also determine the attachment location and direction of the WGA on a plate to maximize its damping performance based on the structural intensity analysis. A couple of WGAs attached to a plate could reduce the mobility of the plate by more than 10 dB. In addition, the WGAs had far less weight but could achieve larger peak reductions compared to thick damping material or spiral ABHs attached to edges. © ICA *** rights reserved

关键词： Acoustic black hole (ABH) Elastic wave Vibration damping

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reverse Laser Assisted Bonding (r-LAB) technology for Chiplet Module Bonding on Substrate 24

Reverse Laser Assisted Bonding (R-LAB) Technology for Chiple...

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24th Electronics Packaging technology Conference, EPTC 2022

作者： Na, SeokHo Gim, MinHo Kim, GaHyeon ryu, dongSu Park, dongJoo Kim, JinYoung Amkor Technology Korea Inc. Advanced Process & Material Development Global R&d Center 150 Songdomirate-ro Yeonsu-gu Incheon Korea Republic of

ISBN: (纸本)9798350398854

There are several chip-to-substrate interconnection technologies in the packaging tool kit such as mass reflow (Mr), thermocompression bonding (TCB) and laser assisted bonding (LAB). Mr is a mature process but has known limitations on fine pitch devices and large/thin substrate packages. TCB has the advantage to minimize bump stress for low-K dielectric devices but its productivity is very low. However, LAB can provide a solution for advanced devices with its localized heating and short bonding time. recently, demand for fine-pitch, Flip Chip bumps and large/thin substrate packages has increased, resulting in industry interest in LAB due to its good quality and high productivity. Amkor technology invented LAB technology in 2014 and passed qualification for multiple devices from customers through many years of development and has been in high volume production for major customers since 2018. However, as the industry continues to require high bonding performance with various new devices, existing LAB technology may not support all these applications. These devices have led to the development of a new bonding concept, which is reverse laser assisted bonding (r-LAB) technology. r-LAB emits the laser to the bottom side of the substrate through a vacuum stage block, which is opposite laser emission direction to existing LAB. It was developed in 2021 by Amkor technology and showed promising results for the packages where top LAB does not work. There are several devices that require r-LAB. One is back side metallization (BSM) die. BSM dies are necessary for metal thermal interface material (TIM) applications for high thermal performance packages. Promising results for BSM die were published in recent 72nd ECTC [1]. Other devices that require r-LAB include chiplet module bonding on substrate and drAM packaging in an epoxy molding compound (EMC). A chiplet module is necessary for high-performance applications such as servers, networking, artificial intelligence (AI), graphics

关键词： Substrates

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Near-infrared-emitting (Gd1-yNdy)3(Ga1-xCrx)5O12 glass ceramic phosphors for light-emitting diodes

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Ceramics International 2025年第16期51卷 22488-22497页

作者： Chen, Yu-Chen Li, Po-Yu Kung, Chung-Wei Chang, Jhe-Wei Kao, Cheng-Wei Kuo, Chi-Ching Liu, Wei-ren Department of Chemical Engineering Chung Yuan Christian University R&D Center for Membrane Technology Center for Circular Economy 200 Chung Pei Rood Chungli District Taoyuan City32023 Taiwan Department of Molecular Science and Engineering Institute of Organic and Polymeric Materials National Taipei University of Technology Taipei106 Taiwan Department of Chemical Engineering National Cheng Kung University Tainan City70101 Taiwan National Synchrotron Radiation Research Center Hsinchu30076 Taiwan Advanced Research Center for Green Materials Science and Technology National Taiwan University Taipei10617 Taiwan

In this study, we proposed a blue-excitable and near-infrared (NIr) emission ceramic phosphor - Gd3Ga5O12:Cr3+, Nd3+ (GGO:Cr, Nd) by a solid-state reaction for light-emitting diode applications. The as-synthesized Gd3Ga4.95Cr0.05O12 phosphor displayed a broad emission peak at 759 nm (4T2 → 4A2) with a full-width-half-maximum of 122 nm under 460 nm excitation. In order to generate NIr, we introduced Nd3+ ions as activators to substitute Gd3+ ions in GGO:Cr3+ phosphors. Via energy transfer from Cr3+ ions to Nd3+ ions in GGO, an intense NIr emission at 1064 nm resulting from 4F3/2 → 4I11/2 is demonstrated. Furthermore, we investigate the doping effects at various concentrations and reanalyzed the luminescent characteristics of (Gd1-yNdy)3(Ga1-xCrx)5O12 phosphors to determine the optimal doping concentration of Cr and Ni, which were found to be 1 mol.% and 3 mol.%, respectively. Finally, we mix the composition-optimized (Gd0.97Nd0.03)3(Ga0.99Cr0.01)5O12 NIr-emission phosphor with silica-based glass powder. After cold pressing and high-temperature sintering using molds, we obtain NIr-emitting glass-ceramic phosphors through laser cutting technology and packaged them into high-power light-emitting diodes. © 2024 Elsevier Ltd and Techna Group S.r.l.

关键词： Glass ceramics

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