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International Electron devices Meeting (IEdM)

作者： Y.N. Hwang S.H. Lee S.J. Ahn S.Y. Lee K.C. ryoo H.S. Hong H.C. Koo F. Yeung J.H. Oh H.J. Kim W.C. Jeong J.H. Park H. Horii Y.H. Ha J.H. Yi G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Semiconductor R&D Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Development Semiconductor R&D Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors as a function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7 mA.

关键词： Writing Phase change random access memory Power system dynamics doping Fabrication Size control Process control Thickness control Electrodes Electrical resistance measurement

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Carbon Nanofiber reinforced Composites for Enhanced Conductivity, Strength, and Tensile Modulus

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MrS Online Proceedings Library 2003年第1期733卷 1-5页

作者： Gary G. Tibbetts Ioana C. Finegan Choongyong Kwag Materials and Processes Laboratory General Motors R&D Center Warren USA Industrial and Engineering Technology Central Michigan University Mount Pleasant USA

Carbon nanofibers of diameter 200 nm may be used as an additive to thermoplastics for applications requiring electrical conductivity and enhanced mechanical properties. The electrical properties of nanofiber in thermoplastics such as nylon and polypropylene and are very attractive compared with those provided by other conventional conducting additives. Because of the low diameter of the nanofibers used, the onset of electrical conductivity (percolation threshold) can be below 1 volume %. Because of the highly conductive nature of the fibers, particularly after a graphitization step, the composites can reach resistivities as low as 0.15 Ohm cm. These conducting composites may be used for applications such as radio frequency interference shielding, primerless electrostatic painting, and static discharge. In order to make composites having excellent mechanical properties, good adhesion between fiber and matrix is essential. Carbon nanofiber-matrix adhesion was studied after surface treating the fibers using a variety of methods. Among as-grown fibers, those produced with longer gas phase feedstock residence times in the fiber growth reactor were less graphitic but adhered to a polypropylene matrix better, giving improved tensile strength and modulus Two chemical treatments were found to be somewhat effective in increasing tensile strength, but both decreased the modulus.. A modest degree of oxidation was also found to increase adhesion to the matrix and increase composite tensile strength, while extended oxidation attacked the fibers sufficiently to decrease composite properties.

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Performance evaluation of a mesh optical burst switched network with tunable lasers and tunable wavelength converters

Performance evaluation of a mesh optical burst switched netw...

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International Conference on Telecommunications (ConTEL)

作者： E. Zouganeli r.O.E. Andreassen r.B. Haugen A. Solem B. Feng A. Sudboe N. Stol B.E. Helvik P.J. Emstad Telenor Research and Development Fornebu Norway Telenor R&D Fornebu Norway Department of Telematics Norwegian University of Science and Technology Trondheim Norway

This paper evaluates the performance of a mesh optical burst switched (OBS) network that implements tunable lasers and tunable wavelength converters to realize the optical label setting and optical label swapping functions. We define a realistic service evolution scenario and based on that create a realistic future traffic input scenario for the OBS network. Network simulation studies are carried out in slotted operation. The mechanisms that govern the operation of this network are revealed together with a number of design tradeoffs.

关键词： Tunable circuits and devices Optical fiber networks Optical wavelength conversion Optical packet switching Optical interferometry Optical modulation Multiprotocol label switching Optical waveguides Telecommunication traffic Phase modulation

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An outstanding and highly manufacturable 80nm drAM technology

An outstanding and highly manufacturable 80nm DRAM technolog...

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International Electron devices Meeting (IEdM)

作者： H.S. Kim d.H. Kim J.M. Park Y.S. Hwang M. Huh H.K. Hwang N.J. Kang B.H. Lee M.H. Cho S.E. Kim J.Y. Kim B.J. Park J.W. Lee d.I. Kim M.Y. Jeong H.J. Kim Y.J. Park Kinam Kim Advanced Technology Development Team Semiconductor R&D Center Device Solution Network Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

For the first time, fully working 512 Mb drAMS have been developed successfully using an 80 nm drAM technology, which is the smallest feature size in drAM technology ever reported. With an ArF lithography, recess-channel-array-transistors (rCAT), low-temperature MIS capacitor technologies and a newly developed top spacer storage node contact (TSC), we have realized these 512 Mb drAMS. Also, we have reduced process steps, including the layer requiring ArF lithography, by using the TSC process.

关键词： Manufacturing random access memory Capacitors Parasitic capacitance Lithography Space technology dry etching Semiconductor device manufacture research and development Energy consumption

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Characterizations of shock-compacted Nd-system superconductor particles

Characterizations of shock-compacted Nd-system superconducto...

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International Conference on Properties and Applications of Properties and Applications of dielectric materials

作者： H. Kezuka M. Kikuchi T. Atoh K. Fukuoka Y. Satoh S. Yoshizawa Department of Bionics Tokyo University of Technology Hachioji Tokyo Japan Institute for Materials Research University of Tohoku Sendai Japan Advanced Materials R&D Center Meisei University Hino Tokyo Japan

Shock compaction for Nd-system superconductor particles have been investigated by shock compaction technique. After the shock compaction characterizations of as-shocked and annealed Nd-system superconductor particles are investigated by X-ray diffraction (Xrd)-analysis for the measurements of lattice parameters and SQUId magnetometer-measurements for the susceptibility. SEM(scanning electron microscopy)-observations of as-shocked and annealed Nd-system superconductor particles are carried out for the grain growth with growth steps. As a result, the as-shocked specimen showed an oriented crystal structure with the lattice constants of the orthorhombic cell with a=0.5787 nm, b=0.5874 nm and c=1.17462 nm for as-shocked Nd-Ba-Cu-O calculated by Xrd just after the shock compaction under 5.7 GPa. From SEM-observations, the surface of the specimens for as-shocked Nd-system superconductor has large grains of 4-10 /spl mu/m in length partly with large growth-steps caused mainly by heats generated in shock compaction.

关键词： Electric shock Compaction Annealing Lattices X-ray diffraction Particle measurements SQUId magnetometers Magnetic susceptibility Electron microscopy X-ray scattering

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A process integration of high performance 64Kb MrAM

A process integration of high performance 64Kb MRAM

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Intermag 2003: International Magnetics Conference

作者： Kim, H.J. Koh, K.H. Jeong, G.T. Jeong, W.C. Park, J.H. Lee, S.Y. Song, I.-H. Jeong, H.S. Kim, Kinam Advanced Technology Development Team Semiconductor R and D Division Samsung Electronics Co. Ltd. San#24. Nongseo-Ri Yongin Gyconggi-Do 449-711 Korea Republic of Materials and Device Labornmry Samsung Adv. Institute of Technology San#24. Nongseo-Ri Yongin Gyconggi-Do 449-711 Korea Republic of

ISBN: (纸本)0780376471

Magnetic and electrical properties of MTJs were investigated at each fabrication step during the process integration of high performance 64 Kb magnetic random access memory (MrAM). Studies showed that the coercivity of the free layer of the sub-micron sized MTJs increased with an enlarged hysteresis due to the demagnetizing field and the interlayer coupling. High TMr ratio of ≡ 35% was obtained from the optimization of the layers consisting of the MTJs.

关键词： Magnetic storage

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relationship between field emission property and composition of carbon nanotube paste for large area cold cathode

Relationship between field emission property and composition...

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IEEE International Conference on Vacuum Microelectronics (IVMC)

作者： Jong Hyung Choi Sung Kee Kang Jae-Hee Han Ji-Beom Yoo Chong-Yun Park Joong-Woo Nam J.M. Kim Center for Nanotubes and Nanostructured Composites Sungkyunkwan University Suwon South Korea Technology Development 3 Corperate R&D Center Samsung SDI Company Limited Yongin si South Korea

CNT paste was made by mixture of multi-walled carbon nanotubes (MWNT) powder, organic vehicles and inorganic binder. Then firing process was performed at different temperature under air and N/sub 2/ atmosphere. It was found that emission property of CNT paste was changed by firing temperature due to remained resin. We obtained good emission property from CNT paste treated at 350/spl deg/C.

关键词： Carbon nanotubes Cathodes Temperature Firing research and development Vehicles Atmosphere Powders Heat treatment Atmospheric measurements

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Enhanced electron emission from carbon nanotube paste after firing

Enhanced electron emission from carbon nanotube paste after ...

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IEEE International Conference on Vacuum Microelectronics (IVMC)

作者： Joong-Woo Nam Jong Hyung Choi Jae-Hee Han Ji-Beom Yoo Chong-Yun Park Sung Kee Kang J.E. Jung J.M. Kim Center for Nanotubes and Nanostructured Composites Sungkyunkwan University Suwon South Korea Technology Development 3 Corperate R&D Center Samsung SDI Company Limited Yongin si South Korea

After multi-walled carbon nanotubes (MWNT) powder was crushed with ball milling process, it was mixed with organic vehicles. And then CNT paste was printed on ITO coated glass substrate. The field emission characteristics of CNT pastes fired in air atmosphere was better than that of CNT paste fired in Ar ambient due to less organic residues after firing.

关键词： Electron emission Carbon nanotubes Argon Firing Vehicles Milling machines research and development Powders Ball milling Glass

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robust process integration of 0.78 /spl mu/m/sup 2/ embedded SrAM with NiSi gate and low-K Cu interconnect for 90 nm SoC applications

Robust process integration of 0.78 /spl mu/m/sup 2/ embedded...

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Symposium on VLSI technology

作者： Y.W. Kim J.H. Ahn T.S. Park C.B. Oh K.T. Lee H.S. Kang d.H. Lee Y.G. Ko K.S. Cheong J.W. Jun S.H. Liu J. Kim J.L. Nam S.r. Ha J.B. Park S.A. Song K.P. Suh Technology Development System LSI division Samsung Electronics Company Limited Yongin si Kyunggi South Korea R&D Center Memory division Samsung Electronics Company Limited Yongin si Kyunggi South Korea Memory division R&D Center K1 Business Samsung Electronics Samsung Advance Institute of Technology AE Center Yongin si Kyunggi South Korea

The smallest high density embedded 0.78 /spl mu/m/sup 2/ 6T-SrAM cell for high performance 90 nm SoC applications was successively integrated by using leading edge technologies such as 193 nm ArF lithography, 1.2 nm gate oxide, 50 nm transistor and Cu dual damascene with low-K dielectric. Fully working for SrAM shows the SNM value above 200 mV. device current of 870 /spl mu/A//spl mu/m and 390 /spl mu/A//spl mu/m for NMOS and PMOS respectively is achieved at 1.0 V operation. reliability life time on hot carrier immunity shows more than 10 years.

关键词： robustness random access memory Lithography Hot carriers Logic devices Implants Etching Large scale integration MOS devices Nickel

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Surface Tension and Wettability of Liquid Fe-16mass%Cr-S Alloy with Alumina

Surface Tension and Wettability of Liquid Fe-16mass%Cr-S All...

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作者： Li, Zushu Zeze, Masafumi Mukai, Kusuhiro Dept. of Mat. Sci. and Engineering Faculty of Engineering Kyushu Institute of Technology Kitakyushu 804-8550 Japan Yawata R and D Lab. Technical Development Bureau Nippon Steel Corporation Kitakyushu 804-8501 Japan Department of Materials Imperial College London Prince Consort Road London SW7 2BP United Kingdom

The surface tension and wettability of liquid Fe-16 mass%Cr-S alloy with alumina substrate at 1823 K and the temperature dependence of surface tension of liquid Fe-16 mass% Cr-S alloy in the temperature range of 1808-1883 K were measured using the sessile drop technique. The surface tension and contact angle of liquid Fe-16 mass%Cr-S alloys with alumina substrate decreased markedly with increasing sulphur concentration in the alloys. The variation of surface tension of liquid Fe-16 mass% Cr-S alloys with sulphur activity can be described by the following equation: σ1g = 1640 - 182 ln(1 + 157as) (mass% O=0.0037-0.0075, mass% S &le 0.195) (mN/m). The interfacial tension between liquid Fe-16 mass% Cr-S alloys and alumina substrate, calculated using Young's equation, can be expressed by the following equation: σs1 = 2170 - 220 ln(1 + 237as) (mass% O=0.0037-0.0075, mass% S &le 0.195) (mN/m). The work of adhesion between liquid Fe-16 mass% Cr-S alloys and alumina had a tendency to increase with increasing sulphur concentration. The temperature coefficient of surface tension, dσ/dT, for Fe-16 mass% Cr-S system in the temperature range of 1808-1883 K increased with increasing sulphur concentration, and changed from negative to positive value when the sulphur concentration exceeded 20 mass ppm.

关键词： Chromium alloys

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